JP7090174B2 - 金属酸化物の低温aldのための方法 - Google Patents
金属酸化物の低温aldのための方法 Download PDFInfo
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- JP7090174B2 JP7090174B2 JP2020553507A JP2020553507A JP7090174B2 JP 7090174 B2 JP7090174 B2 JP 7090174B2 JP 2020553507 A JP2020553507 A JP 2020553507A JP 2020553507 A JP2020553507 A JP 2020553507A JP 7090174 B2 JP7090174 B2 JP 7090174B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Description
Claims (15)
- 堆積方法であって、
基板に第1の金属表面を提供すること;及び
前記基板を第2の金属前駆体及びアルコールに別々に曝露して、前記第1の金属表面上に第2の金属酸化物層を形成することであって、前記第2の金属前駆体が、実質的に金属-酸素結合を含まず、前記アルコールが、前記アルコールのベータ炭素に対して配置された電子吸引基を含み、前記ベータ炭素に結合したベータ水素の酸性度を高める、前記基板を第2の金属前駆体及びアルコールに別々に曝露して、前記第1の金属表面上に第2の金属酸化物層を形成すること
を含む、方法。 - 前記基板が約350℃以下の温度で維持される、請求項1に記載の方法。
- 前記第1の金属が、コバルト、銅、ニッケル、ルテニウム、タングステン、又は白金のうちの一つ又は複数を含む、請求項1に記載の方法。
- 前記第2の金属が、アルミニウム、ハフニウム、ジルコニウム、ニッケル、亜鉛、タンタル、又はチタンのうちの一つ又は複数を含む、請求項1に記載の方法。
- 前記第2の金属前駆体が、少なくとも1つのカルボ配位子を含む、請求項1に記載の方法。
- 前記少なくとも1つのカルボ配位子が、1個から6個の炭素原子を含む、請求項5に記載の方法。
- 前記第2の金属前駆体が、少なくとも1つのアミノ配位子を含む、請求項1に記載の方法。
- 前記第2の金属前駆体が、少なくとも1つのハロゲン配位子を含む、請求項1に記載の方法。
- 前記アルコールが2個から10個の炭素原子を含む、請求項1に記載の方法。
- 前記アルコールが第2級アルコールである、請求項1に記載の方法。
- 前記電子吸引基が、ハロゲン化物基、ケトン基、アルケン基、アルキン基、フェニル基、エーテル基、エステル基、ニトロ基、シアノ基又は三ハロゲン化物基から選択される、請求項1に記載の方法。
- 前記アルコールが、4-ヒドロキシ-2-ブタノン、4-ヒドロキシ-2-ペンタノン、4-ヒドロキシ-4-メチル-2-ペンタノン、1-クロロ-2-プロパノール、2-メトキシエタノール、1-フェニル-2-プロパノール、4-ペンテン-2-オール、1,6-ヘプタジエン-4-オール、4,4,4-トリフルオロ-2-ブタノール又はそれらの組み合わせから選択される、請求項1に記載の方法。
- 堆積方法であって、
基板に第1の金属表面を提供することであって、前記第1の金属が本質的にコバルトからなる、基板に第1の金属表面を提供すること;及び
前記基板をトリメチルアルミニウム及び4-ヒドロキシ-2-ペンタノンに別々に曝露して、前記第1の金属表面上に酸化アルミニウム層を形成すること
を含み、
前記基板が約350℃以下の温度で維持される、方法。 - 堆積方法であって、
基板に第1の金属表面を提供すること;
前記基板を第2の金属前駆体及び第1のアルコールに別々に曝露することであって、前記第2の金属前駆体が実質的に金属-酸素結合を含まず、前記第1のアルコールが前記第1のアルコールのベータ炭素に対して配置された電子吸引基を含み、前記第1のアルコールの前記ベータ炭素に結合したベータ水素の酸性度を高める、前記基板を第2の金属前駆体及び第1のアルコールに別々に曝露すること;及び
前記基板を第3の金属前駆体及び第2のアルコールに別々に曝露して、前記第1の金属表面上に混合金属酸化物層を形成することであって、前記第3の金属が実質的に金属-酸素結合を含まず、前記第2のアルコールが前記第2のアルコールのベータ炭素に対して配置された電子吸引基を含み、前記第2のアルコールの前記ベータ炭素に結合したベータ水素の酸性度を高める、前記基板を第3の金属前駆体及び第2のアルコールに別々に曝露して、前記第1の金属表面上に混合金属酸化物層を形成すること
を含み、
前記混合金属酸化物が、前記第2の金属及び前記第3の金属を含み、前記第1の金属、前記第2の金属及び前記第3の金属がそれぞれ異なる金属である、
方法。 - 前記第1のアルコールと前記第2のアルコールが同じアルコールである、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862653534P | 2018-04-05 | 2018-04-05 | |
US62/653,534 | 2018-04-05 | ||
PCT/US2019/025975 WO2019195670A1 (en) | 2018-04-05 | 2019-04-05 | Methods for low temperature ald of metal oxides |
Publications (2)
Publication Number | Publication Date |
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JP2021519521A JP2021519521A (ja) | 2021-08-10 |
JP7090174B2 true JP7090174B2 (ja) | 2022-06-23 |
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Application Number | Title | Priority Date | Filing Date |
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JP2020553507A Active JP7090174B2 (ja) | 2018-04-05 | 2019-04-05 | 金属酸化物の低温aldのための方法 |
Country Status (5)
Country | Link |
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US (1) | US20190309412A1 (ja) |
JP (1) | JP7090174B2 (ja) |
KR (1) | KR102569299B1 (ja) |
TW (1) | TWI807006B (ja) |
WO (1) | WO2019195670A1 (ja) |
Families Citing this family (1)
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TW202126844A (zh) * | 2020-01-10 | 2021-07-16 | 美商應用材料股份有限公司 | 金屬氧化物的低溫原子層沉積 |
Citations (4)
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JP2002069639A (ja) | 2000-09-01 | 2002-03-08 | Hiroshi Funakubo | 化学気相成長方法、化学気相成長方法に用いる補助原料、及び化学気相成長方法によって作製された膜並びに素子 |
JP2008532932A (ja) | 2005-02-14 | 2008-08-21 | プラクスエア・テクノロジー・インコーポレイテッド | 有機アルミニウム前駆体化合物 |
JP2010532917A (ja) | 2007-06-22 | 2010-10-14 | ザ・リージエンツ・オブ・ザ・ユニバーシティ・オブ・コロラド | 原子層堆積法及び分子層堆積法を用いて製造された有機電子デバイス用の保護被膜 |
US20180010247A1 (en) | 2016-07-08 | 2018-01-11 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
Family Cites Families (12)
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US7041609B2 (en) * | 2002-08-28 | 2006-05-09 | Micron Technology, Inc. | Systems and methods for forming metal oxides using alcohols |
US7141500B2 (en) * | 2003-06-05 | 2006-11-28 | American Air Liquide, Inc. | Methods for forming aluminum containing films utilizing amino aluminum precursors |
JP5025484B2 (ja) * | 2004-10-26 | 2012-09-12 | アーエスエム インターナショナル エヌ ヴィ | 鉛含有酸化物膜の堆積方法 |
KR101289950B1 (ko) * | 2005-06-10 | 2013-07-26 | 가부시키가이샤 아데카 | 니오브 2-에틸헥사노에이트 유도체, 그 유도체의 제조방법, 그 유도체를 함유하는 유기산 금속염 조성물, 및 그조성물을 이용한 박막의 제조 방법 |
US8222076B2 (en) * | 2006-08-02 | 2012-07-17 | Xerox Corporation | Fabricating amorphous zinc oxide semiconductor layer |
WO2008042981A2 (en) * | 2006-10-05 | 2008-04-10 | Asm America, Inc. | Ald of metal silicate films |
JP5201930B2 (ja) * | 2007-02-16 | 2013-06-05 | 富士フイルム株式会社 | 親水性部材及びその製造方法 |
TWI491759B (zh) * | 2009-03-17 | 2015-07-11 | Advanced Tech Materials | 利用輔助性金屬物種以沉積釕的方法與組成物 |
WO2012109523A2 (en) * | 2011-02-10 | 2012-08-16 | General Plasma, Inc. | Deposition of thin films on energy sensitive surfaces |
CN102339775A (zh) * | 2011-09-23 | 2012-02-01 | 复旦大学 | 砷化镓表面自体氧化物清洗、纯化及淀积Al2O3介质的方法 |
US20160064275A1 (en) * | 2014-08-27 | 2016-03-03 | Applied Materials, Inc. | Selective Deposition With Alcohol Selective Reduction And Protection |
US9859153B1 (en) * | 2016-11-14 | 2018-01-02 | Lam Research Corporation | Deposition of aluminum oxide etch stop layers |
-
2019
- 2019-04-05 KR KR1020207031980A patent/KR102569299B1/ko active IP Right Grant
- 2019-04-05 US US16/376,176 patent/US20190309412A1/en not_active Abandoned
- 2019-04-05 WO PCT/US2019/025975 patent/WO2019195670A1/en active Application Filing
- 2019-04-05 JP JP2020553507A patent/JP7090174B2/ja active Active
- 2019-04-08 TW TW108112094A patent/TWI807006B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002069639A (ja) | 2000-09-01 | 2002-03-08 | Hiroshi Funakubo | 化学気相成長方法、化学気相成長方法に用いる補助原料、及び化学気相成長方法によって作製された膜並びに素子 |
JP2008532932A (ja) | 2005-02-14 | 2008-08-21 | プラクスエア・テクノロジー・インコーポレイテッド | 有機アルミニウム前駆体化合物 |
JP2010532917A (ja) | 2007-06-22 | 2010-10-14 | ザ・リージエンツ・オブ・ザ・ユニバーシティ・オブ・コロラド | 原子層堆積法及び分子層堆積法を用いて製造された有機電子デバイス用の保護被膜 |
US20180010247A1 (en) | 2016-07-08 | 2018-01-11 | Asm Ip Holding B.V. | Organic reactants for atomic layer deposition |
Also Published As
Publication number | Publication date |
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KR102569299B1 (ko) | 2023-08-22 |
US20190309412A1 (en) | 2019-10-10 |
KR20200128759A (ko) | 2020-11-16 |
TWI807006B (zh) | 2023-07-01 |
WO2019195670A1 (en) | 2019-10-10 |
JP2021519521A (ja) | 2021-08-10 |
TW201944468A (zh) | 2019-11-16 |
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