JP5025484B2 - 鉛含有酸化物膜の堆積方法 - Google Patents
鉛含有酸化物膜の堆積方法 Download PDFInfo
- Publication number
- JP5025484B2 JP5025484B2 JP2007538452A JP2007538452A JP5025484B2 JP 5025484 B2 JP5025484 B2 JP 5025484B2 JP 2007538452 A JP2007538452 A JP 2007538452A JP 2007538452 A JP2007538452 A JP 2007538452A JP 5025484 B2 JP5025484 B2 JP 5025484B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- oxide
- lead
- metal
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 69
- 238000000151 deposition Methods 0.000 title claims description 48
- 239000002243 precursor Substances 0.000 claims description 114
- 239000010409 thin film Substances 0.000 claims description 86
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 239000002184 metal Substances 0.000 claims description 68
- 239000010408 film Substances 0.000 claims description 66
- 238000006243 chemical reaction Methods 0.000 claims description 64
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 61
- 229910052760 oxygen Inorganic materials 0.000 claims description 61
- 239000001301 oxygen Substances 0.000 claims description 59
- 238000000231 atomic layer deposition Methods 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 40
- 230000008021 deposition Effects 0.000 claims description 34
- 239000010936 titanium Substances 0.000 claims description 33
- 239000007789 gas Substances 0.000 claims description 29
- 229910000464 lead oxide Inorganic materials 0.000 claims description 29
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 229910052719 titanium Inorganic materials 0.000 claims description 20
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 19
- 229910044991 metal oxide Inorganic materials 0.000 claims description 19
- 239000010955 niobium Substances 0.000 claims description 18
- -1 organometallic lead compound Chemical class 0.000 claims description 18
- 239000003446 ligand Substances 0.000 claims description 17
- 150000004706 metal oxides Chemical class 0.000 claims description 17
- 229910052745 lead Inorganic materials 0.000 claims description 16
- 239000011777 magnesium Substances 0.000 claims description 16
- 229910052758 niobium Inorganic materials 0.000 claims description 16
- 229910052749 magnesium Inorganic materials 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 229910001868 water Inorganic materials 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- WBJSMHDYLOJVKC-UHFFFAOYSA-N tetraphenyllead Chemical compound C1=CC=CC=C1[Pb](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 WBJSMHDYLOJVKC-UHFFFAOYSA-N 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 7
- MRMOZBOQVYRSEM-UHFFFAOYSA-N tetraethyllead Chemical compound CC[Pb](CC)(CC)CC MRMOZBOQVYRSEM-UHFFFAOYSA-N 0.000 claims description 6
- 125000003342 alkenyl group Chemical group 0.000 claims description 5
- 150000004703 alkoxides Chemical class 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical group [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052723 transition metal Inorganic materials 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 4
- 239000013110 organic ligand Substances 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 125000002877 alkyl aryl group Chemical group 0.000 claims description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 3
- 125000002837 carbocyclic group Chemical group 0.000 claims description 3
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 125000000623 heterocyclic group Chemical group 0.000 claims description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 3
- 150000002902 organometallic compounds Chemical class 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 125000003944 tolyl group Chemical group 0.000 claims description 3
- 125000005023 xylyl group Chemical group 0.000 claims description 3
- 125000003282 alkyl amino group Chemical group 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 150000001350 alkyl halides Chemical class 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 125000001153 fluoro group Chemical group F* 0.000 claims 2
- 229910052740 iodine Inorganic materials 0.000 claims 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims 1
- 239000005751 Copper oxide Substances 0.000 claims 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims 1
- 239000000292 calcium oxide Substances 0.000 claims 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims 1
- 229910000423 chromium oxide Inorganic materials 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 1
- 150000004659 dithiocarbamates Chemical class 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 150000002978 peroxides Chemical class 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 125000000547 substituted alkyl group Chemical group 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 1
- 229910001935 vanadium oxide Inorganic materials 0.000 claims 1
- 239000003039 volatile agent Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 238000010926 purge Methods 0.000 description 38
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 19
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 14
- 239000012071 phase Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 10
- 239000002052 molecular layer Substances 0.000 description 9
- 239000000376 reactant Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 8
- 238000006557 surface reaction Methods 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 6
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 5
- 229910002113 barium titanate Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 5
- 150000002736 metal compounds Chemical class 0.000 description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000003877 atomic layer epitaxy Methods 0.000 description 4
- 229910052788 barium Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 4
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000001678 elastic recoil detection analysis Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- ZTILUDNICMILKJ-UHFFFAOYSA-N niobium(v) ethoxide Chemical compound CCO[Nb](OCC)(OCC)(OCC)OCC ZTILUDNICMILKJ-UHFFFAOYSA-N 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000004876 x-ray fluorescence Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910003077 Ti−O Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- FKSZLDCMQZJMFN-UHFFFAOYSA-N [Mg].[Pb] Chemical compound [Mg].[Pb] FKSZLDCMQZJMFN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- ZEIWWVGGEOHESL-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC.OC.OC.OC ZEIWWVGGEOHESL-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QUJWBBABMDGOEA-UHFFFAOYSA-N CC1=C(C(=C(C1(C)[Ba]C1(C(=C(C(=C1C)C)C)C)C)C)C)C Chemical compound CC1=C(C(=C(C1(C)[Ba]C1(C(=C(C(=C1C)C)C)C)C)C)C)C QUJWBBABMDGOEA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910019800 NbF 5 Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- USZGMDQWECZTIQ-UHFFFAOYSA-N [Mg](C1C=CC=C1)C1C=CC=C1 Chemical compound [Mg](C1C=CC=C1)C1C=CC=C1 USZGMDQWECZTIQ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- DKVNPHBNOWQYFE-UHFFFAOYSA-N carbamodithioic acid Chemical compound NC(S)=S DKVNPHBNOWQYFE-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000000224 chemical solution deposition Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012990 dithiocarbamate Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- ARYKTOJCZLAFIS-UHFFFAOYSA-N hydrogen peroxide;ozone Chemical compound OO.[O-][O+]=O ARYKTOJCZLAFIS-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical compound [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- RLBIQVVOMOPOHC-UHFFFAOYSA-N parathion-methyl Chemical compound COP(=S)(OC)OC1=CC=C([N+]([O-])=O)C=C1 RLBIQVVOMOPOHC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- AOLPZAHRYHXPLR-UHFFFAOYSA-I pentafluoroniobium Chemical compound F[Nb](F)(F)(F)F AOLPZAHRYHXPLR-UHFFFAOYSA-I 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009681 x-ray fluorescence measurement Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
本発明の文中で、「ALD型方法」とは、一般に、固体の薄膜が加熱した表面上での自己飽和化学反応によって分子層毎に形成される、支持体上での薄膜の製造方法を意味する。この方法では、気体の反応物質、すなわち前駆体をALD型の反応装置の反応空間に導入し、チャンバー内に位置する支持体と接触させ、表面反応を起こさせる。反応空間の圧力及び温度は、前駆体の物理吸着(すなわち、気体の凝縮)及び熱分解を避ける範囲に調整される。結果的に、最大で一つの物質の単層(即ち、原子層又は分子層)だけが、一度にそれぞれのパスルサイクル時に堆積される。薄膜の実際の成長速度は、一般にÅ/パルスサイクルとして示され、例えば、加熱した表面における反応することのできる表面部位の数及び化学吸着した分子のかさ高さに依存する。物質パルスは、時間で互いに分けられており、また、物質パルス間で、反応空間を不活性ガス(例えば、窒素又はアルゴン)でパージするか、排気して、余剰の気体の反応物質と反応の副生成物がチャンバーから除去されるため、前駆体間の気相反応や望ましくない副生成物の反応を抑制する。
鉛前駆体
本発明によれば、炭素−鉛結合により鉛原子に結合した有機リガンドを有する有機金属鉛前駆体が、ALD反応装置中での薄膜の製造における原料物質として使用される。有機金属鉛化合物は、2又は4個のアルキルリガンド又は芳香族基を含むリガンドを有する。特に、有機金属鉛化合物は、次式
L1L2L3L4Pb
[式中、L1、L2、L3及びL4のそれぞれは、独立して、直鎖状又は枝分れしたC1〜C20のアルキル基又はアルケニル基;少なくとも一つの水素原子がフッ素原子、塩素原子、臭素原子又はヨウ素原子で置換されるハロゲン化アルキル基又はアルケニル基;アリール基、好ましくはフェニル基、トリル基、キシリル基、ベンジル基、環状ジエンを含むアルキルアリール基等の炭素環基、ハロゲン化炭素環基;及び複素環基(炭素原子を介して金属に結合するものに限る)から選択される]を有する。
三元もしくはそれ以上の金属酸化物に必要とされる第二金属原料物質は、金属化合物、又は二つ若しくは複数の金属を含む複合金属化合物である。金属は、一般に、元素周期表においてIUPACによる推奨される分類による遷移金属及び主族金属、即ち、第1族(Li,Na,K,Rb,Cs);第2族(Mg,Ca,Sr,Ba);第3族(Sc,Y,La,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu);第4族(Ti,Zr,Hf);第5族(V,Nb,Ta);第6族(Cr,Mo,W);第7族(Mn,Re);第8族(Fe,Ru,Os);第9族(Co,Rh,Ir);第10族(Ni,Pd,Pt);第11族(Cu,Ag,Au);第12族(Zn,Cd,Hg);第13族(Al,Ga,In,Tl);第14族(Si,Ge,Sn);及び/又は第15族(Sb,Bi)を含む族の元素の揮発性又は気体の化合物の群から選択される。
酸素原料物質は、水;酸素;過酸化水素H2O2、過酸化水素の水溶液;オゾンO3;NO2、NO、N2Oを含む窒素の酸化物;ハロゲン化物‐酸素化合物;過酸−C(=O)−O−OH;メタノール、エタノール、プロパノール及びイソプロパノール等のアルコール;アルコキシド;O*及びHO*等の酸素含有ラジカル、ここで、*は不対電子を示し;並びにこれらの混合物を含む群から選択されるのが好ましい。オゾンガスは、オゾンの製造方法によって、しばしば酸素ガスで希釈される。酸素前駆体の蒸気は、任意に不活性ガスで希釈される。
反応温度は、前駆体の蒸発温度及び熱分解温度によって変えることができる。典型的な幅は、約150〜400℃、特に約180〜380℃で表される。結晶化について得られた結果に基づくと、膜の結晶化をやや高い焼きなまし温度で達成するために、300℃未満の温度、典型的には約200〜290℃、例えば約250℃でテトラフェニル鉛からチタン酸鉛膜を成長させることが、特に好適である。
酸化鉛膜のALD方法
図2に、多金属酸化物(例えば、PbTiO3)薄膜の堆積のためのプロセスシーケンスを示す。ALD(ALE)の歴史を通して、入れ子状のパルスサイクルがALD膜成長の制御プログラムに利用されてきた。コンピュータメモリーに記憶され、CPUにより実行される制御プログラムは、プログラム可能なグローバルパルスサイクルカウンタ234及びローカルパルスサイクルカウンタ214,228を含む入れ子状のパルスサイクルルーチンを備える。グローバルパルスサイクルカウンタ234は、所定の薄膜全体の厚さを管理する。ローカルパルスサイクルカウンタ214,228のそれぞれは、薄膜を形成する副層、例えば二元金属酸化物の所定の厚さを管理する。
(実施例2)
材料及び方法
膜の堆積は、市販の流式F−120原子層堆積反応装置(ASM Microchemistry社)を用いて実行した。250〜300℃の温度で薄膜堆積の研究を行ったが、その際の反応装置内の圧力は2〜3mbarであった。テトラフェニル鉛(Ph4Pb,Aldrich Chem.社,97%)及びチタンイソプロポキシド(Ti(OiPr)4,Aldrich Chem.社,97%)を金属前駆体として使用した。金属前駆体は、反応装置内で、それぞれ165℃および40℃に保った口の開いたソースボートから蒸発させた。キャリアガス、パージガスとして窒素を用い、反応物質を交互に反応装置に導入した。窒素(>99.999%)は窒素発生器(Nitrox UHPN 3000-1)から得た。オゾン発生器(Fischer model 502)を用いて酸素(純度>99.999%)から発生させたオゾン、及び30℃に保ったシリンダー内で気化させた水を、それぞれPh4Pb及びTi(OiPr)4の酸素源として用いた。使用したSi(100)(Okmetic,フィンランド)支持体の大きさは5×10cm2であった。
PbO薄膜の成長速度は、Ph4Pbパルス時間を1〜1.5sとしたとき、250℃では0.13Å/サイクル及び300℃では0.10Å/サイクルとなることが分かった。表面を十分に飽和するために、PbTiO3を堆積する際のPh4Pbのパルス時間は1.5sを用いた。オゾンは2s、チタンイソプロポキシドは0.6〜0.8s、及び水は1sのパルス時間であった。
Ph4Pb/O3法によるPbO2膜の作製
酸化鉛薄膜をALDによって、テトラフェニル鉛Ph4Pbを鉛前駆体として用いて成長させた。蒸発温度は165〜170℃であった。Ph4Pb/O3法では、堆積温度が成長速度に与える影響を185〜400℃の温度域で検討した。Ph4Pbのパルス時間は、1.0〜3.0sであった。オゾンパルスを1.0〜3.0sの範囲で変化させ、窒素パルスを1.0〜2.5sの範囲で変化させた。
付属の図(図3〜7)は、酸化鉛膜のALD成長の結果をグラフで表したものである。
PbMgNbO3膜、PbMgNbO3−PbTiO3膜及びPbMgNbO3−PbTiO3−BaTiO3膜の堆積
ニオブ酸マグネシウム鉛を含む薄膜を、Pb4Pb又はEt4Pb等の本発明による鉛前駆体、シクロペンタジエニルマグネシウムMg(Cp)2又はMg(thd)2等のマグネシウム前駆体、ニオブエトキシドNb(OEt)5又は他のアルコキシド、塩化ニオブNbCl5又はフッ化ニオブNbF5等のニオブ前駆体、及び水又はオゾン等の酸素前駆体により堆積することができる。
Ph4Pb又はEt4Pb等の鉛前駆体を反応空間における支持体に導入する。鉛前駆体を反応空間に導入した後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、水又はオゾン等の酸素を含む前駆体を反応空間における支持体に導入する。酸素を含む前駆体の導入後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、ニオブエトキシド等のニオブを含む前駆体を反応空間における支持体に導入する。ニオブ前駆体を反応空間に導入した後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、水又はオゾン等の酸素を含む前駆体を反応空間における支持体に導入する。酸素を含む前駆体の導入後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、ビス(シクロペンタジエニル)マグネシウム又はビス(2,2,6,6-テトラメチル-3,5-ヘプタンジオナート)マグネシウム等のマグネシウムを含む前駆体を反応空間における支持体に導入する。マグネシウム前駆体を反応空間に導入した後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、PbMgNbO3の1枚の分子層が支持体上に堆積する。このサブサイクルは必要であれば何度でも繰り返し、目的の組成及び/又は構造の膜を形成することができる。このサブサイクルにおいては、金属を含む前駆体パルス及びそれに続く酸素を含む前駆体パルスの1つ以上を省略することによって、膜に堆積する金属の量を調整することができる。
Ph4Pb又はEt4Pb等の鉛前駆体を反応空間における支持体に導入する。鉛前駆体を反応空間に導入した後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、水又はオゾン等の酸素を含む前駆体を反応空間における支持体に導入する。酸素を含む前駆体の導入後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、チタンメトキシド又はチタンイソプロポキシド等のチタンを含む前駆体を反応空間における支持体に導入する。チタン前駆体を反応空間に導入した後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、水又はオゾン等の酸素を含む前駆体を反応空間における支持体に導入する。酸素を含む前駆体の導入後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、PbTiO3の1枚の分子層が支持体上に堆積される。このサブサイクルは必要であれば何度でも繰り返し、目的の組成及び/又は構造の膜を形成させることができる。このサブサイクルにおいては、金属を含む前駆体パルス及びそれに続く酸素を含む前駆体パルスの1つ以上を省略することによって、膜に堆積する金属の量を調整することができる。
THF付加化合物ビス(ペンタメチルシクロペンタジエニル)バリウムBa(C5(CH3)5)THFX(ここで、Xは0〜2である)等のバリウム前駆体を反応空間における支持体に導入する。バリウム前駆体を反応空間に導入した後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、水又はオゾン等の酸素を含む前駆体を反応空間における支持体に導入する。酸素を含む前駆体の導入後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、チタンメトキシド又はチタンイソプロポキシド等のチタンを含む前駆体を反応空間における支持体に導入する。チタン前駆体を反応空間に導入した後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、水又はオゾン等の酸素を含む前駆体を反応空間における支持体に導入する。酸素を含む前駆体の導入後、反応空間をパージガスの有無にかかわらずパージする。パージ段階後に、BaTiO3の1枚の分子層が支持体上に堆積される。このサブサイクルは必要であれば何度でも繰り返し、目的の組成及び/又は構造の膜を形成させることができる。このサブサイクルにおいては、金属を含む前駆体パルス及びそれに続く酸素を含む前駆体パルスの1つ以上を省略することによって、膜に堆積する金属の量を調整することができる。
Pb(thd)2/O3法によるPbO2膜の製造
比較のために、ALD条件にて、鉛の前駆体として、リガンドが酸素−金属結合を介して金属原子に結合している有機金属化合物を用い、酸化鉛膜を堆積した。
102 鉛原子
104 炭素原子
106 水素原子
110 陰影付きボール図
Claims (22)
- (i)酸化鉛の原料物質として、炭素−鉛結合により鉛原子に結合した有機リガンドを有する有機金属鉛化合物を用いる工程と、
(ii)有機金属鉛化合物、及び前記原料物質と酸化物を形成することが可能な少なくとも一つの酸素原料物質の気相パルスを反応空間の中に交互に供給する工程と、
(iii)多成分酸化物薄膜を製造する工程と、を含み、
(a)前記有機金属鉛化合物が、次式:
L 1 L 2 L 3 L 4 Pb
[式中、L 1 、L 2 、L 3 及びL 4 のそれぞれは、独立して、直鎖状又は枝分れしたC 1 〜C 20 のアルキル基又はアルケニル基、好ましくはメチル基、エチル基、n−プロピル基、i−プロピル基、n−ブチル基、sec−ブチル基、t−ブチル基;少なくとも一つの水素原子がフッ素原子、塩素原子、臭素原子又はヨウ素原子で置換されるハロゲン化アルキル基又はアルケニル基;アリール基、好ましくはフェニル基、トリル基、キシリル基、ベンジル基、アルキルアリール基等の炭素環基、ハロゲン化炭素環基;及び複素環基から選択される]を有し、
(b)前記多成分酸化物薄膜が、PbTiO 3 又はPbNbO 3 を含む原子層堆積による鉛含有酸化物薄膜の製造方法。 - 2又は4個のアルキルリガンド又は芳香族基を含むリガンドを有する有機金属鉛化合物を用いる工程を含む、請求項1に記載の方法。
- 前記多成分酸化物薄膜が、酸化ビスマス、酸化カルシウム、酸化ストロンチウム、酸化銅、酸化チタン、酸化タンタル、酸化ジルコニウム、酸化ハフニウム、酸化バナジウム、酸化ニオブ、酸化クロム、酸化タングステン、酸化モリブデン、酸化アルミニウム、希土類酸化物及び酸化ケイ素の群から選択される第二金属酸化物を含むことを特徴とする請求項1又は2に記載の方法。
- 前記多成分酸化物薄膜が、酸化ランタン及び酸化ジルコニウムの群から選択される少なくとも一つの更なる金属酸化物を含むことを特徴とする請求項1〜3のいずれかに記載の方法。
- 前記多成分酸化物薄膜が、Pb(Zr,Ti)O3又は(Pb,La)(Zr,Ti)O3を含むことを特徴とする請求項4に記載の方法。
- 前記多成分酸化物薄膜が、酸化マグネシウム及び酸化亜鉛の群から選択される少なくとも一つの追加の金属酸化物を含むことを特徴とする請求項1〜5のいずれかに記載の方法。
- 前記多成分酸化物薄膜が、Pb(Mg,Nb)O3又はPb(Zn,Nb)O3を含むことを特徴とする請求項6に記載の方法。
- 前記多成分酸化物薄膜が、Pb(Mg,Nb)O3及びPbTiO3を含むことを特徴とする請求項6に記載の方法。
- 前記多成分酸化物薄膜が、Pb(Mg,Nb)O3、PbTiO3及びBaTiO3を含むことを特徴とする請求項6に記載の方法。
- 前記酸化鉛の原料物質が、テトラエチル鉛又はテトラフェニル鉛を含むことを特徴とする請求項1〜9のいずれかに記載の方法。
- 堆積温度が約150〜400℃であることを特徴とする請求項1〜10のいずれかに記載の方法。
- 前記第二金属酸化物が、ハロゲン化物又は金属有機化合物の群から選択される原料物質から堆積されることを特徴とする請求項1〜11のいずれかに記載の方法。
- 前記原料物質が、アルコキシ化合物、アルキルアミノ化合物、シクロペンタジエニル化合物、ジチオカルバメート化合物及びベータジケトネート化合物の群から選択されることを特徴とする請求項12に記載の方法。
- 前記酸素原料物質が、水、酸素、過酸化水素、過酸化水素の水溶液、オゾン、窒素の酸化物、ハロゲン化物−酸素化合物、過酸化物(−C(=O)−OOH)、アルコール、アルコキシド、酸素含有ラジカル及びそれらの混合物の群から選択されることを特徴とする請求項1〜13のいずれかに記載の方法。
- PbTiO3の膜が、結晶質のPbTiO3の膜を得るため、500℃を超える温度で焼きなましされることを特徴とする請求項1〜14に記載の方法。
- 前記PbTiO3の膜が、800℃を超える温度で焼きなましされることを特徴とする請求項15に記載の方法。
- 前記PbTiO3の膜が、不活性雰囲気下で又は酸素の存在下で焼きなましされることを特徴とする請求項15又は16に記載の方法。
- 原子層堆積により、鉛含有多成分酸化物薄膜を反応空間において支持体上に形成するに当たり、
第一金属原料物質、第二金属原料物質、並びに該第一金属原料物質及び該第二金属原料物質と酸化物を形成することが可能な少なくとも一つの酸素原料物質の気相パルスを前記反応空間の中に交互に供給する工程を含み、
(a)前記第一金属原料物質が、有機金属鉛化合物の鉛原子に炭素−鉛結合により結合した、任意に置換されたアルキルリガンド又はアリールリガンドを有する有機金属鉛化合物であり、
(b)前記第二金属原料物質が、元素周期表において(IUPACにより推奨される分類による)第1族、第2族、第3族、第4族、第5族、第6族、第7族、第8族、第9族、第10族、第11族、第12族、第13族及び/又は第14族の少なくとも一つの遷移金属又は主族金属の揮発性化合物であり、
(c)前記有機金属鉛化合物が、次式:
L 1 L 2 L 3 L 4 Pb
[式中、L 1 、L 2 、L 3 及びL 4 のそれぞれは、独立して、直鎖状又は枝分れしたC 1 〜C 20 のアルキル基又はアルケニル基、好ましくはメチル基、エチル基、n−プロピル基、i−プロピル基、n−ブチル基、sec−ブチル基、t−ブチル基;少なくとも一つの水素原子がフッ素原子、塩素原子、臭素原子又はヨウ素原子で置換されるハロゲン化アルキル基又はアルケニル基;アリール基、好ましくはフェニル基、トリル基、キシリル基、ベンジル基、アルキルアリール基等の炭素環基、ハロゲン化炭素環基;及び複素環基から選択される]を有し、
(d)前記多成分酸化物薄膜が、PbTiO 3 又はPbNbO 3 を含むことを特徴とする原子層堆積による反応空間での支持体上への鉛含有多成分酸化物薄膜の形成方法。 - 前記第一金属原料物質が、テトラエチル鉛又はテトラフェニル鉛であることを特徴とする請求項18に記載の方法。
- 前記酸素原料物質が、オゾン又は水であることを特徴とする請求項18又は19に記載の方法。
- 前記反応空間の中に、種々の金属前駆体の交互パルスを供給し、その後に酸素原料のパルスを供給することにより、多成分膜を製造する工程を含む、請求項18〜20のいずれかに記載の方法。
- 第二金属原料と、その後の酸素原料のパルスからなるサイクルに対する鉛含有前駆体と、その後の対応する酸素原料のパルスからなるサイクルの比が約50:1...1:50であることを特徴とする請求項21に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/974,487 | 2004-10-26 | ||
US10/974,487 US20060088660A1 (en) | 2004-10-26 | 2004-10-26 | Methods of depositing lead containing oxides films |
TW094137328 | 2005-10-25 | ||
TW094137328A TWI414622B (zh) | 2004-10-26 | 2005-10-25 | 使含鉛之氧化物膜沈積的方法 |
PCT/FI2005/000461 WO2006045885A1 (en) | 2004-10-26 | 2005-10-26 | Method of depositing lead containing oxides films |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008518104A JP2008518104A (ja) | 2008-05-29 |
JP5025484B2 true JP5025484B2 (ja) | 2012-09-12 |
Family
ID=36227506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007538452A Active JP5025484B2 (ja) | 2004-10-26 | 2005-10-26 | 鉛含有酸化物膜の堆積方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5025484B2 (ja) |
KR (1) | KR20070072927A (ja) |
WO (1) | WO2006045885A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5174975B2 (ja) * | 2007-09-06 | 2013-04-03 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
KR101171558B1 (ko) * | 2008-02-19 | 2012-08-06 | 엘피다 메모리 가부시키가이샤 | 성막 방법 및 기억 매체 |
US20190309412A1 (en) * | 2018-04-05 | 2019-10-10 | Applied Materials, Inc. | Methods For Low Temperature ALD Of Metal Oxides |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02200782A (ja) * | 1989-01-31 | 1990-08-09 | Matsushita Electric Ind Co Ltd | チタン酸鉛薄膜の形成方法 |
US5104690A (en) * | 1990-06-06 | 1992-04-14 | Spire Corporation | CVD thin film compounds |
AU3582793A (en) * | 1992-02-21 | 1993-09-13 | Radiant Technologies, Inc. | Method for depositing a thin film on a semiconductor circuit |
JPH104206A (ja) * | 1996-01-29 | 1998-01-06 | Matsushita Denchi Kogyo Kk | 化合物半導体薄膜の形成法と同薄膜を用いた光電変換素子 |
JPH1017398A (ja) * | 1996-06-29 | 1998-01-20 | Masaru Okada | Plzt強誘電体薄膜の製造方法 |
JPH1192937A (ja) * | 1997-09-17 | 1999-04-06 | Masaru Okada | Plzt系薄膜の合成方法 |
KR100327105B1 (ko) * | 1998-08-14 | 2002-03-09 | 오길록 | 고휘도 형광체 및 그 제조방법 |
TW515032B (en) * | 1999-10-06 | 2002-12-21 | Samsung Electronics Co Ltd | Method of forming thin film using atomic layer deposition method |
US6576053B1 (en) * | 1999-10-06 | 2003-06-10 | Samsung Electronics Co., Ltd. | Method of forming thin film using atomic layer deposition method |
US6828218B2 (en) * | 2001-05-31 | 2004-12-07 | Samsung Electronics Co., Ltd. | Method of forming a thin film using atomic layer deposition |
-
2005
- 2005-10-26 KR KR1020077011883A patent/KR20070072927A/ko not_active Application Discontinuation
- 2005-10-26 WO PCT/FI2005/000461 patent/WO2006045885A1/en active Application Filing
- 2005-10-26 JP JP2007538452A patent/JP5025484B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR20070072927A (ko) | 2007-07-06 |
JP2008518104A (ja) | 2008-05-29 |
WO2006045885A1 (en) | 2006-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI414622B (zh) | 使含鉛之氧化物膜沈積的方法 | |
US9117773B2 (en) | High concentration water pulses for atomic layer deposition | |
US9169557B2 (en) | Process for producing oxide films | |
US9646820B2 (en) | Methods for forming conductive titanium oxide thin films | |
Leskelä et al. | Atomic layer deposition (ALD): from precursors to thin film structures | |
US6930059B2 (en) | Method for depositing a nanolaminate film by atomic layer deposition | |
US6537613B1 (en) | Process for metal metalloid oxides and nitrides with compositional gradients | |
JP2965812B2 (ja) | 有機金属化学的気相成長法による強誘電体膜の成膜方法 | |
US7618681B2 (en) | Process for producing bismuth-containing oxide films | |
US20080072819A1 (en) | Metal oxide films | |
US20040168627A1 (en) | Atomic layer deposition of oxide film | |
US8592294B2 (en) | High temperature atomic layer deposition of dielectric oxides | |
JP2020511797A (ja) | 強誘電体材料としてのケイ素ドープ酸化ハフニウムの堆積のための新規配合物 | |
JP2020511796A (ja) | 強誘電体材料としてのケイ素ドープ酸化ハフニウムの堆積のための新規配合物 | |
Harjuoja et al. | Atomic layer deposition and post-deposition annealing of PbTiO3 thin films | |
JP5025484B2 (ja) | 鉛含有酸化物膜の堆積方法 | |
US8202808B2 (en) | Methods of forming strontium titanate films | |
KR101372162B1 (ko) | 배향된 탄탈륨 펜트옥사이드 막을 제조하는 방법 | |
Kim et al. | Synthesis and characterization of lead (IV) precursors and their conversion to PZT materials through a CVD process | |
EP0760400A2 (en) | Process for producing bismuth compounds, and bismuth compounds | |
KR100866305B1 (ko) | 고유전율 금속산화막, 그의 제조방법 및 이를 포함하는소자 | |
US20120309206A1 (en) | Stoichiometry Control Of Transition Metal Oxides In Thin Films | |
EP4013906A1 (en) | Formulation for deposition of silicon doped hafnium oxide | |
Sekita et al. | Deposition Control of La in the Preparation of (Bi, La) 4Th012 Films by Liquid-delivery MOCVD |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080902 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110913 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111209 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111216 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120209 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120529 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120619 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150629 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5025484 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |