JP7082927B2 - 露光装置 - Google Patents

露光装置 Download PDF

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Publication number
JP7082927B2
JP7082927B2 JP2018158667A JP2018158667A JP7082927B2 JP 7082927 B2 JP7082927 B2 JP 7082927B2 JP 2018158667 A JP2018158667 A JP 2018158667A JP 2018158667 A JP2018158667 A JP 2018158667A JP 7082927 B2 JP7082927 B2 JP 7082927B2
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JP
Japan
Prior art keywords
unit
adjustment
light
mla
positional relationship
Prior art date
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Active
Application number
JP2018158667A
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English (en)
Japanese (ja)
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JP2020034619A (ja
Inventor
博文 水野
幸英 茂野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Screen Holdings Co Ltd
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2018158667A priority Critical patent/JP7082927B2/ja
Priority to TW108124341A priority patent/TWI725474B/zh
Priority to KR1020190087901A priority patent/KR102269439B1/ko
Priority to CN201910678844.4A priority patent/CN110865516B/zh
Publication of JP2020034619A publication Critical patent/JP2020034619A/ja
Application granted granted Critical
Publication of JP7082927B2 publication Critical patent/JP7082927B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018158667A 2018-08-27 2018-08-27 露光装置 Active JP7082927B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018158667A JP7082927B2 (ja) 2018-08-27 2018-08-27 露光装置
TW108124341A TWI725474B (zh) 2018-08-27 2019-07-10 曝光裝置
KR1020190087901A KR102269439B1 (ko) 2018-08-27 2019-07-19 노광 장치
CN201910678844.4A CN110865516B (zh) 2018-08-27 2019-07-25 曝光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018158667A JP7082927B2 (ja) 2018-08-27 2018-08-27 露光装置

Publications (2)

Publication Number Publication Date
JP2020034619A JP2020034619A (ja) 2020-03-05
JP7082927B2 true JP7082927B2 (ja) 2022-06-09

Family

ID=69651921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018158667A Active JP7082927B2 (ja) 2018-08-27 2018-08-27 露光装置

Country Status (4)

Country Link
JP (1) JP7082927B2 (ko)
KR (1) KR102269439B1 (ko)
CN (1) CN110865516B (ko)
TW (1) TWI725474B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022064625A1 (ko) * 2020-09-25 2022-03-31
TWI795211B (zh) * 2022-02-15 2023-03-01 友達光電股份有限公司 控制電路裝置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002311433A (ja) 2001-04-13 2002-10-23 Seiko Epson Corp 電気光学装置の製造方法および電気光学装置
JP2004296531A (ja) 2003-03-25 2004-10-21 Fuji Photo Film Co Ltd 露光装置
JP2005234113A (ja) 2004-02-18 2005-09-02 Fuji Photo Film Co Ltd 露光装置
JP2006013387A (ja) 2004-06-29 2006-01-12 Canon Inc 荷電粒子線露光装置及び荷電粒子線露光装置の調整方法
JP2008152010A (ja) 2006-12-18 2008-07-03 Fujifilm Corp 鮮鋭化素子の製造方法
JP2011134768A (ja) 2009-12-22 2011-07-07 V Technology Co Ltd フォトマスク
WO2012017808A1 (ja) 2010-08-06 2012-02-09 株式会社ブイ・テクノロジー マイクロレンズ露光装置
CN103081060A (zh) 2010-08-30 2013-05-01 株式会社V技术 使用了微透镜阵列的曝光装置及光学构件
US20160091796A1 (en) 2014-09-29 2016-03-31 Samsung Display Co., Ltd. Maskless exposure device, maskless exposure method and display substrate manufactured by the maskless exposure device and the maskless exposure method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4244156B2 (ja) 2003-05-07 2009-03-25 富士フイルム株式会社 投影露光装置
JP2006337873A (ja) * 2005-06-03 2006-12-14 Fujifilm Holdings Corp 露光装置及び露光方法
JP2008249958A (ja) * 2007-03-30 2008-10-16 Fujifilm Corp 基準位置計測装置及び方法、並びに描画装置
KR101698150B1 (ko) * 2010-01-29 2017-02-02 삼성전자 주식회사 기준마크를 포함하는 마이크로 렌즈 어레이와 이를 포함하는 마스크리스 노광장치 및 그 교정방법
WO2013147122A1 (ja) * 2012-03-30 2013-10-03 株式会社オーク製作所 マスクレス露光装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002311433A (ja) 2001-04-13 2002-10-23 Seiko Epson Corp 電気光学装置の製造方法および電気光学装置
JP2004296531A (ja) 2003-03-25 2004-10-21 Fuji Photo Film Co Ltd 露光装置
JP2005234113A (ja) 2004-02-18 2005-09-02 Fuji Photo Film Co Ltd 露光装置
JP2006013387A (ja) 2004-06-29 2006-01-12 Canon Inc 荷電粒子線露光装置及び荷電粒子線露光装置の調整方法
JP2008152010A (ja) 2006-12-18 2008-07-03 Fujifilm Corp 鮮鋭化素子の製造方法
JP2011134768A (ja) 2009-12-22 2011-07-07 V Technology Co Ltd フォトマスク
WO2012017808A1 (ja) 2010-08-06 2012-02-09 株式会社ブイ・テクノロジー マイクロレンズ露光装置
CN103081060A (zh) 2010-08-30 2013-05-01 株式会社V技术 使用了微透镜阵列的曝光装置及光学构件
US20160091796A1 (en) 2014-09-29 2016-03-31 Samsung Display Co., Ltd. Maskless exposure device, maskless exposure method and display substrate manufactured by the maskless exposure device and the maskless exposure method

Also Published As

Publication number Publication date
TWI725474B (zh) 2021-04-21
JP2020034619A (ja) 2020-03-05
KR102269439B1 (ko) 2021-06-24
CN110865516B (zh) 2022-07-12
TW202013084A (zh) 2020-04-01
CN110865516A (zh) 2020-03-06
KR20200024079A (ko) 2020-03-06

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