JP7078632B2 - 補償位置特定処理装置および方法 - Google Patents

補償位置特定処理装置および方法 Download PDF

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Publication number
JP7078632B2
JP7078632B2 JP2019536290A JP2019536290A JP7078632B2 JP 7078632 B2 JP7078632 B2 JP 7078632B2 JP 2019536290 A JP2019536290 A JP 2019536290A JP 2019536290 A JP2019536290 A JP 2019536290A JP 7078632 B2 JP7078632 B2 JP 7078632B2
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Japan
Prior art keywords
scanner
particle beam
scanning
control circuit
workpiece
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Japanese (ja)
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JP2020503654A (ja
JP2020503654A5 (enExample
Inventor
シー． グウィン，マシュー
ディー． タバト，マーティン
リーガン，ケネス
ジェイ． リース，アレン
グラフ，マイケル
Original Assignee
ティーイーエル エピオン インコーポレイテッド
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Publication of JP2020503654A5 publication Critical patent/JP2020503654A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Multi-Process Working Machines And Systems (AREA)
JP2019536290A 2017-01-09 2018-01-05 補償位置特定処理装置および方法 Active JP7078632B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762444188P 2017-01-09 2017-01-09
US62/444,188 2017-01-09
PCT/US2018/012666 WO2018129379A1 (en) 2017-01-09 2018-01-05 Compensated location specific processing apparatus and method

Publications (3)

Publication Number Publication Date
JP2020503654A JP2020503654A (ja) 2020-01-30
JP2020503654A5 JP2020503654A5 (enExample) 2021-05-20
JP7078632B2 true JP7078632B2 (ja) 2022-05-31

Family

ID=62782436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019536290A Active JP7078632B2 (ja) 2017-01-09 2018-01-05 補償位置特定処理装置および方法

Country Status (7)

Country Link
US (2) US10497540B2 (enExample)
JP (1) JP7078632B2 (enExample)
KR (1) KR102490143B1 (enExample)
CN (1) CN110249405B (enExample)
DE (1) DE112018000150T5 (enExample)
TW (1) TWI783962B (enExample)
WO (1) WO2018129379A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018152183A (ja) * 2017-03-10 2018-09-27 株式会社日立製作所 微細構造体の製造方法および製造装置
US11227741B2 (en) * 2018-05-03 2022-01-18 Plasma-Therm Nes Llc Scanning ion beam etch
US12176178B2 (en) * 2018-05-03 2024-12-24 Plasma-Therm Nes Llc Scanning ion beam deposition and etch

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006059701A (ja) 2004-08-20 2006-03-02 Sii Nanotechnology Inc 荷電粒子ビーム装置およびそれを用いた狭ギャップ電極形成方法
JP2006344931A (ja) 2005-04-15 2006-12-21 Leibniz-Inst Fuer Oberflaechenmodifizierung Ev パルスイオンビームによる表面改質のための局所エッチングまたは堆積の制御
US20150325410A1 (en) 2014-05-09 2015-11-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
JP2015533012A (ja) 2012-08-31 2015-11-16 アクセリス テクノロジーズ， インコーポレイテッド イオン注入における注入に誘導される損傷制御
US20150332924A1 (en) 2014-05-14 2015-11-19 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system

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Publication number Priority date Publication date Assignee Title
US6521895B1 (en) * 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
US20020175297A1 (en) * 2001-05-25 2002-11-28 Scheuer Jay T. Methods and apparatus for ion implantation with variable spatial frequency scan lines
US7196337B2 (en) * 2003-05-05 2007-03-27 Cabot Microelectronics Corporation Particle processing apparatus and methods
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
EP2297766B1 (en) 2008-06-04 2016-09-07 Mapper Lithography IP B.V. Writing strategy
US8097860B2 (en) 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US8304033B2 (en) 2009-02-04 2012-11-06 Tel Epion Inc. Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
TWI515759B (zh) * 2009-05-20 2016-01-01 瑪波微影Ｉｐ公司 用於帶電粒子微影設備的數據途徑
JP5963139B2 (ja) * 2011-10-03 2016-08-03 株式会社Ｐａｒａｍ 電子ビーム描画方法および描画装置
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
JP6161571B2 (ja) * 2014-05-26 2017-07-12 住友重機械イオンテクノロジー株式会社 イオン注入装置
US20160111254A1 (en) 2014-10-16 2016-04-21 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Method And Apparatus
US20160111245A1 (en) * 2014-10-20 2016-04-21 Advanced Ion Beam Technology, Inc. Electrode assembly having pierce electrodes for controlling space charge effects
JP6546509B2 (ja) * 2015-10-28 2019-07-17 株式会社ニューフレアテクノロジー パターン検査方法及びパターン検査装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006059701A (ja) 2004-08-20 2006-03-02 Sii Nanotechnology Inc 荷電粒子ビーム装置およびそれを用いた狭ギャップ電極形成方法
JP2006344931A (ja) 2005-04-15 2006-12-21 Leibniz-Inst Fuer Oberflaechenmodifizierung Ev パルスイオンビームによる表面改質のための局所エッチングまたは堆積の制御
JP2015533012A (ja) 2012-08-31 2015-11-16 アクセリス テクノロジーズ， インコーポレイテッド イオン注入における注入に誘導される損傷制御
US20150325410A1 (en) 2014-05-09 2015-11-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
US20150332924A1 (en) 2014-05-14 2015-11-19 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system

Also Published As

Publication number Publication date
US10861674B2 (en) 2020-12-08
DE112018000150T5 (de) 2019-08-01
KR20190097071A (ko) 2019-08-20
TW201841193A (zh) 2018-11-16
WO2018129379A1 (en) 2018-07-12
JP2020503654A (ja) 2020-01-30
US10497540B2 (en) 2019-12-03
CN110249405B (zh) 2022-09-23
TWI783962B (zh) 2022-11-21
US20200066485A1 (en) 2020-02-27
KR102490143B1 (ko) 2023-01-18
US20180197715A1 (en) 2018-07-12
CN110249405A (zh) 2019-09-17

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