KR102490143B1 - 보상된 위치에 따른 처리 장치 및 방법 - Google Patents

보상된 위치에 따른 처리 장치 및 방법 Download PDF

Info

Publication number
KR102490143B1
KR102490143B1 KR1020197018214A KR20197018214A KR102490143B1 KR 102490143 B1 KR102490143 B1 KR 102490143B1 KR 1020197018214 A KR1020197018214 A KR 1020197018214A KR 20197018214 A KR20197018214 A KR 20197018214A KR 102490143 B1 KR102490143 B1 KR 102490143B1
Authority
KR
South Korea
Prior art keywords
workpiece
scanner
particle beam
scan
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020197018214A
Other languages
English (en)
Korean (ko)
Other versions
KR20190097071A (ko
Inventor
매튜 씨. 그윈
마틴 디. 타밧
케네스 레간
알렌 제이. 리스
마이클 그라프
Original Assignee
텔 에피온 인크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 텔 에피온 인크 filed Critical 텔 에피온 인크
Publication of KR20190097071A publication Critical patent/KR20190097071A/ko
Application granted granted Critical
Publication of KR102490143B1 publication Critical patent/KR102490143B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Multi-Process Working Machines And Systems (AREA)
KR1020197018214A 2017-01-09 2018-01-05 보상된 위치에 따른 처리 장치 및 방법 Active KR102490143B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762444188P 2017-01-09 2017-01-09
US62/444,188 2017-01-09
PCT/US2018/012666 WO2018129379A1 (en) 2017-01-09 2018-01-05 Compensated location specific processing apparatus and method

Publications (2)

Publication Number Publication Date
KR20190097071A KR20190097071A (ko) 2019-08-20
KR102490143B1 true KR102490143B1 (ko) 2023-01-18

Family

ID=62782436

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197018214A Active KR102490143B1 (ko) 2017-01-09 2018-01-05 보상된 위치에 따른 처리 장치 및 방법

Country Status (7)

Country Link
US (2) US10497540B2 (enExample)
JP (1) JP7078632B2 (enExample)
KR (1) KR102490143B1 (enExample)
CN (1) CN110249405B (enExample)
DE (1) DE112018000150T5 (enExample)
TW (1) TWI783962B (enExample)
WO (1) WO2018129379A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018152183A (ja) * 2017-03-10 2018-09-27 株式会社日立製作所 微細構造体の製造方法および製造装置
US11227741B2 (en) * 2018-05-03 2022-01-18 Plasma-Therm Nes Llc Scanning ion beam etch
US12176178B2 (en) * 2018-05-03 2024-12-24 Plasma-Therm Nes Llc Scanning ion beam deposition and etch

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344931A (ja) * 2005-04-15 2006-12-21 Leibniz-Inst Fuer Oberflaechenmodifizierung Ev パルスイオンビームによる表面改質のための局所エッチングまたは堆積の制御
US20150332924A1 (en) * 2014-05-14 2015-11-19 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521895B1 (en) * 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
US20020175297A1 (en) * 2001-05-25 2002-11-28 Scheuer Jay T. Methods and apparatus for ion implantation with variable spatial frequency scan lines
US7196337B2 (en) * 2003-05-05 2007-03-27 Cabot Microelectronics Corporation Particle processing apparatus and methods
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
JP2006059701A (ja) * 2004-08-20 2006-03-02 Sii Nanotechnology Inc 荷電粒子ビーム装置およびそれを用いた狭ギャップ電極形成方法
EP2297766B1 (en) 2008-06-04 2016-09-07 Mapper Lithography IP B.V. Writing strategy
US8097860B2 (en) 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US8304033B2 (en) 2009-02-04 2012-11-06 Tel Epion Inc. Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
TWI515759B (zh) * 2009-05-20 2016-01-01 瑪波微影Ｉｐ公司 用於帶電粒子微影設備的數據途徑
JP5963139B2 (ja) * 2011-10-03 2016-08-03 株式会社Ｐａｒａｍ 電子ビーム描画方法および描画装置
US9490185B2 (en) * 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
US9336998B2 (en) * 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
JP6161571B2 (ja) * 2014-05-26 2017-07-12 住友重機械イオンテクノロジー株式会社 イオン注入装置
US20160111254A1 (en) 2014-10-16 2016-04-21 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Method And Apparatus
US20160111245A1 (en) * 2014-10-20 2016-04-21 Advanced Ion Beam Technology, Inc. Electrode assembly having pierce electrodes for controlling space charge effects
JP6546509B2 (ja) * 2015-10-28 2019-07-17 株式会社ニューフレアテクノロジー パターン検査方法及びパターン検査装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344931A (ja) * 2005-04-15 2006-12-21 Leibniz-Inst Fuer Oberflaechenmodifizierung Ev パルスイオンビームによる表面改質のための局所エッチングまたは堆積の制御
US20150332924A1 (en) * 2014-05-14 2015-11-19 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system

Also Published As

Publication number Publication date
US10861674B2 (en) 2020-12-08
DE112018000150T5 (de) 2019-08-01
KR20190097071A (ko) 2019-08-20
TW201841193A (zh) 2018-11-16
WO2018129379A1 (en) 2018-07-12
JP2020503654A (ja) 2020-01-30
US10497540B2 (en) 2019-12-03
CN110249405B (zh) 2022-09-23
TWI783962B (zh) 2022-11-21
US20200066485A1 (en) 2020-02-27
JP7078632B2 (ja) 2022-05-31
US20180197715A1 (en) 2018-07-12
CN110249405A (zh) 2019-09-17

Similar Documents

Publication Publication Date Title
US20090084757A1 (en) Uniformity control for ion beam assisted etching
KR101408456B1 (ko) 다중-구역 종료점 검출기
JP5325203B2 (ja) ガスクラスターイオンビームを用いて系統的な不均一性を補正する装置及び方法
US20130256271A1 (en) Methods and apparatuses for controlling plasma in a plasma processing chamber
US10861674B2 (en) Compensated location specific processing apparatus and method
WO2009045722A1 (en) Two-diemensional uniformity correction for ion beam assisted etching
WO2000008670A9 (en) Dose monitor for plasma-monitor ion implantation doping system
KR20020047293A (ko) 플라즈마 처리 시스템내의 전류 측정값으로부터 변위전류를 제거하기 위한 방법 및 장치
JP7013539B2 (ja) ロケーションスペシフィック処理における予測システム誤差補正を実装する装置及び方法
TWI401722B (zh) 多數基板之特定位置處理時增大處理量的方法、系統及電腦可讀媒體
KR101631319B1 (ko) 자기 바이어스 능동 부하 회로 및, 하전 입자 빔 처리 시스템용 관련된 전원 장치
JP5542135B2 (ja) イオン注入におけるビーム角測定のための方法および装置
US10971411B2 (en) Hybrid corrective processing system and method
KR20170036479A (ko) 이온 빔 에칭 장치
US7253423B2 (en) Technique for uniformity tuning in an ion implanter system
KR102125063B1 (ko) 빔 조절 기능을 갖는 반도체 공정 시스템용 그리드 장치 및, 이를 이용한 반도체 박막 공정 방법
TWI607492B (zh) 離子佈植過程中控制壓力的方法及其離子佈植裝置
US10256095B2 (en) Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system
TWI828135B (zh) 半導體製造方法
JP2017152624A (ja) 数値制御プラズマ処理方法及びその装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 4