DE112018000150T5 - Kompensierte positionsspezifische bearbeitungsvorrichtung und verfahren - Google Patents

Kompensierte positionsspezifische bearbeitungsvorrichtung und verfahren Download PDF

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Publication number
DE112018000150T5
DE112018000150T5 DE112018000150.4T DE112018000150T DE112018000150T5 DE 112018000150 T5 DE112018000150 T5 DE 112018000150T5 DE 112018000150 T DE112018000150 T DE 112018000150T DE 112018000150 T5 DE112018000150 T5 DE 112018000150T5
Authority
DE
Germany
Prior art keywords
particle beam
workpiece
scanner
state
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112018000150.4T
Other languages
German (de)
English (en)
Inventor
Matthew C. Gwinn
Martin D. Tabat
Kenneth Regan
Allen J. Leith
Michael Graf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tel Manufacturing and Engineering of America Inc
Original Assignee
TEL Epion Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TEL Epion Inc filed Critical TEL Epion Inc
Publication of DE112018000150T5 publication Critical patent/DE112018000150T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Multi-Process Working Machines And Systems (AREA)
DE112018000150.4T 2017-01-09 2018-01-05 Kompensierte positionsspezifische bearbeitungsvorrichtung und verfahren Pending DE112018000150T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762444188P 2017-01-09 2017-01-09
US62/444,188 2017-01-09
PCT/US2018/012666 WO2018129379A1 (en) 2017-01-09 2018-01-05 Compensated location specific processing apparatus and method

Publications (1)

Publication Number Publication Date
DE112018000150T5 true DE112018000150T5 (de) 2019-08-01

Family

ID=62782436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112018000150.4T Pending DE112018000150T5 (de) 2017-01-09 2018-01-05 Kompensierte positionsspezifische bearbeitungsvorrichtung und verfahren

Country Status (7)

Country Link
US (2) US10497540B2 (enExample)
JP (1) JP7078632B2 (enExample)
KR (1) KR102490143B1 (enExample)
CN (1) CN110249405B (enExample)
DE (1) DE112018000150T5 (enExample)
TW (1) TWI783962B (enExample)
WO (1) WO2018129379A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018152183A (ja) * 2017-03-10 2018-09-27 株式会社日立製作所 微細構造体の製造方法および製造装置
US11227741B2 (en) * 2018-05-03 2022-01-18 Plasma-Therm Nes Llc Scanning ion beam etch
US12176178B2 (en) * 2018-05-03 2024-12-24 Plasma-Therm Nes Llc Scanning ion beam deposition and etch

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100193701A1 (en) 2009-02-04 2010-08-05 Tel Epion Inc. Multiple nozzle gas cluster ion beam system
US20100193472A1 (en) 2009-02-04 2010-08-05 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521895B1 (en) * 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
US20020175297A1 (en) * 2001-05-25 2002-11-28 Scheuer Jay T. Methods and apparatus for ion implantation with variable spatial frequency scan lines
US7196337B2 (en) * 2003-05-05 2007-03-27 Cabot Microelectronics Corporation Particle processing apparatus and methods
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
JP2006059701A (ja) * 2004-08-20 2006-03-02 Sii Nanotechnology Inc 荷電粒子ビーム装置およびそれを用いた狭ギャップ電極形成方法
DE102005017632B4 (de) * 2005-04-15 2010-04-08 Leibniz-Institut für Oberflächenmodifizierung e.V. Verfahren zur Modifikation der Oberfläche einer Probe mittels eines gepulsten Ionenstrahls oder mittels eines ionenstrahlgenerierten Teilchenstrahls mit homogen oder gaußförmig verteilter Stromdichte
EP2297766B1 (en) 2008-06-04 2016-09-07 Mapper Lithography IP B.V. Writing strategy
TWI515759B (zh) * 2009-05-20 2016-01-01 瑪波微影Ｉｐ公司 用於帶電粒子微影設備的數據途徑
JP5963139B2 (ja) * 2011-10-03 2016-08-03 株式会社Ｐａｒａｍ 電子ビーム描画方法および描画装置
US9490185B2 (en) * 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
US9336998B2 (en) * 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
US9540725B2 (en) 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
JP6161571B2 (ja) * 2014-05-26 2017-07-12 住友重機械イオンテクノロジー株式会社 イオン注入装置
US20160111254A1 (en) 2014-10-16 2016-04-21 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Method And Apparatus
US20160111245A1 (en) * 2014-10-20 2016-04-21 Advanced Ion Beam Technology, Inc. Electrode assembly having pierce electrodes for controlling space charge effects
JP6546509B2 (ja) * 2015-10-28 2019-07-17 株式会社ニューフレアテクノロジー パターン検査方法及びパターン検査装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100193701A1 (en) 2009-02-04 2010-08-05 Tel Epion Inc. Multiple nozzle gas cluster ion beam system
US20100193472A1 (en) 2009-02-04 2010-08-05 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating

Also Published As

Publication number Publication date
US10861674B2 (en) 2020-12-08
KR20190097071A (ko) 2019-08-20
TW201841193A (zh) 2018-11-16
WO2018129379A1 (en) 2018-07-12
JP2020503654A (ja) 2020-01-30
US10497540B2 (en) 2019-12-03
CN110249405B (zh) 2022-09-23
TWI783962B (zh) 2022-11-21
US20200066485A1 (en) 2020-02-27
JP7078632B2 (ja) 2022-05-31
KR102490143B1 (ko) 2023-01-18
US20180197715A1 (en) 2018-07-12
CN110249405A (zh) 2019-09-17

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Legal Events

Date Code Title Description
R081 Change of applicant/patentee

Owner name: TEL MANUFACTURING AND ENGINEERING OF AMERICA. , US

Free format text: FORMER OWNER: TEL EPION INC., BILLERICA, MASS., US

R082 Change of representative

Representative=s name: BOEHMERT & BOEHMERT ANWALTSPARTNERSCHAFT MBB -, DE

R012 Request for examination validly filed