TWI783962B - 工件處理設備及方法 - Google Patents

工件處理設備及方法 Download PDF

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Publication number
TWI783962B
TWI783962B TW107100711A TW107100711A TWI783962B TW I783962 B TWI783962 B TW I783962B TW 107100711 A TW107100711 A TW 107100711A TW 107100711 A TW107100711 A TW 107100711A TW I783962 B TWI783962 B TW I783962B
Authority
TW
Taiwan
Prior art keywords
workpiece
particle beam
control circuit
scanner
scanning
Prior art date
Application number
TW107100711A
Other languages
English (en)
Chinese (zh)
Other versions
TW201841193A (zh
Inventor
馬修 Ｃ 葛溫
馬丁 Ｄ 塔貝特
肯尼斯 里根
艾倫 Ｊ 萊斯
麥可 葛瑞夫
Original Assignee
美商東京威力科創艾派恩股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商東京威力科創艾派恩股份有限公司 filed Critical 美商東京威力科創艾派恩股份有限公司
Publication of TW201841193A publication Critical patent/TW201841193A/zh
Application granted granted Critical
Publication of TWI783962B publication Critical patent/TWI783962B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Multi-Process Working Machines And Systems (AREA)
TW107100711A 2017-01-09 2018-01-09 工件處理設備及方法 TWI783962B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762444188P 2017-01-09 2017-01-09
US62/444,188 2017-01-09

Publications (2)

Publication Number Publication Date
TW201841193A TW201841193A (zh) 2018-11-16
TWI783962B true TWI783962B (zh) 2022-11-21

Family

ID=62782436

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107100711A TWI783962B (zh) 2017-01-09 2018-01-09 工件處理設備及方法

Country Status (7)

Country Link
US (2) US10497540B2 (enExample)
JP (1) JP7078632B2 (enExample)
KR (1) KR102490143B1 (enExample)
CN (1) CN110249405B (enExample)
DE (1) DE112018000150T5 (enExample)
TW (1) TWI783962B (enExample)
WO (1) WO2018129379A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018152183A (ja) * 2017-03-10 2018-09-27 株式会社日立製作所 微細構造体の製造方法および製造装置
US11227741B2 (en) * 2018-05-03 2022-01-18 Plasma-Therm Nes Llc Scanning ion beam etch
US12176178B2 (en) * 2018-05-03 2024-12-24 Plasma-Therm Nes Llc Scanning ion beam deposition and etch

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521895B1 (en) * 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
JP2006344931A (ja) * 2005-04-15 2006-12-21 Leibniz-Inst Fuer Oberflaechenmodifizierung Ev パルスイオンビームによる表面改質のための局所エッチングまたは堆積の制御
TW201118913A (en) * 2009-05-20 2011-06-01 Mapper Lithography Ip Bv Data path for a charged particle lithography apparatus
US20140065730A1 (en) * 2012-08-31 2014-03-06 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
US20150325410A1 (en) * 2014-05-09 2015-11-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
US20150332924A1 (en) * 2014-05-14 2015-11-19 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
TW201727223A (zh) * 2015-10-28 2017-08-01 紐富來科技股份有限公司 圖案檢查方法及圖案檢查裝置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020175297A1 (en) * 2001-05-25 2002-11-28 Scheuer Jay T. Methods and apparatus for ion implantation with variable spatial frequency scan lines
US7196337B2 (en) * 2003-05-05 2007-03-27 Cabot Microelectronics Corporation Particle processing apparatus and methods
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
JP2006059701A (ja) * 2004-08-20 2006-03-02 Sii Nanotechnology Inc 荷電粒子ビーム装置およびそれを用いた狭ギャップ電極形成方法
EP2297766B1 (en) 2008-06-04 2016-09-07 Mapper Lithography IP B.V. Writing strategy
US8097860B2 (en) 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US8304033B2 (en) 2009-02-04 2012-11-06 Tel Epion Inc. Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
JP5963139B2 (ja) * 2011-10-03 2016-08-03 株式会社Ｐａｒａｍ 電子ビーム描画方法および描画装置
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
JP6161571B2 (ja) * 2014-05-26 2017-07-12 住友重機械イオンテクノロジー株式会社 イオン注入装置
US20160111254A1 (en) 2014-10-16 2016-04-21 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Method And Apparatus
US20160111245A1 (en) * 2014-10-20 2016-04-21 Advanced Ion Beam Technology, Inc. Electrode assembly having pierce electrodes for controlling space charge effects

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521895B1 (en) * 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
JP2006344931A (ja) * 2005-04-15 2006-12-21 Leibniz-Inst Fuer Oberflaechenmodifizierung Ev パルスイオンビームによる表面改質のための局所エッチングまたは堆積の制御
TW201118913A (en) * 2009-05-20 2011-06-01 Mapper Lithography Ip Bv Data path for a charged particle lithography apparatus
US20140065730A1 (en) * 2012-08-31 2014-03-06 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
US20150325410A1 (en) * 2014-05-09 2015-11-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
US20150332924A1 (en) * 2014-05-14 2015-11-19 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
TW201727223A (zh) * 2015-10-28 2017-08-01 紐富來科技股份有限公司 圖案檢查方法及圖案檢查裝置

Also Published As

Publication number Publication date
US10861674B2 (en) 2020-12-08
DE112018000150T5 (de) 2019-08-01
KR20190097071A (ko) 2019-08-20
TW201841193A (zh) 2018-11-16
WO2018129379A1 (en) 2018-07-12
JP2020503654A (ja) 2020-01-30
US10497540B2 (en) 2019-12-03
CN110249405B (zh) 2022-09-23
US20200066485A1 (en) 2020-02-27
JP7078632B2 (ja) 2022-05-31
KR102490143B1 (ko) 2023-01-18
US20180197715A1 (en) 2018-07-12
CN110249405A (zh) 2019-09-17

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