JP2020503654A5 - - Google Patents

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Publication number
JP2020503654A5
JP2020503654A5 JP2019536290A JP2019536290A JP2020503654A5 JP 2020503654 A5 JP2020503654 A5 JP 2020503654A5 JP 2019536290 A JP2019536290 A JP 2019536290A JP 2019536290 A JP2019536290 A JP 2019536290A JP 2020503654 A5 JP2020503654 A5 JP 2020503654A5
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JP
Japan
Prior art keywords
particle beam
control circuit
scanner
scanning
particle
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JP2019536290A
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English (en)
Japanese (ja)
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JP2020503654A (ja
JP7078632B2 (ja
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Priority claimed from PCT/US2018/012666 external-priority patent/WO2018129379A1/en
Publication of JP2020503654A publication Critical patent/JP2020503654A/ja
Publication of JP2020503654A5 publication Critical patent/JP2020503654A5/ja
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JP2019536290A 2017-01-09 2018-01-05 補償位置特定処理装置および方法 Active JP7078632B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762444188P 2017-01-09 2017-01-09
US62/444,188 2017-01-09
PCT/US2018/012666 WO2018129379A1 (en) 2017-01-09 2018-01-05 Compensated location specific processing apparatus and method

Publications (3)

Publication Number Publication Date
JP2020503654A JP2020503654A (ja) 2020-01-30
JP2020503654A5 true JP2020503654A5 (enExample) 2021-05-20
JP7078632B2 JP7078632B2 (ja) 2022-05-31

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ID=62782436

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JP2019536290A Active JP7078632B2 (ja) 2017-01-09 2018-01-05 補償位置特定処理装置および方法

Country Status (7)

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US (2) US10497540B2 (enExample)
JP (1) JP7078632B2 (enExample)
KR (1) KR102490143B1 (enExample)
CN (1) CN110249405B (enExample)
DE (1) DE112018000150T5 (enExample)
TW (1) TWI783962B (enExample)
WO (1) WO2018129379A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018152183A (ja) * 2017-03-10 2018-09-27 株式会社日立製作所 微細構造体の製造方法および製造装置
US11227741B2 (en) * 2018-05-03 2022-01-18 Plasma-Therm Nes Llc Scanning ion beam etch
US12176178B2 (en) * 2018-05-03 2024-12-24 Plasma-Therm Nes Llc Scanning ion beam deposition and etch

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6521895B1 (en) * 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
US20020175297A1 (en) * 2001-05-25 2002-11-28 Scheuer Jay T. Methods and apparatus for ion implantation with variable spatial frequency scan lines
US7196337B2 (en) * 2003-05-05 2007-03-27 Cabot Microelectronics Corporation Particle processing apparatus and methods
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
JP2006059701A (ja) * 2004-08-20 2006-03-02 Sii Nanotechnology Inc 荷電粒子ビーム装置およびそれを用いた狭ギャップ電極形成方法
DE102005017632B4 (de) * 2005-04-15 2010-04-08 Leibniz-Institut für Oberflächenmodifizierung e.V. Verfahren zur Modifikation der Oberfläche einer Probe mittels eines gepulsten Ionenstrahls oder mittels eines ionenstrahlgenerierten Teilchenstrahls mit homogen oder gaußförmig verteilter Stromdichte
EP2297766B1 (en) 2008-06-04 2016-09-07 Mapper Lithography IP B.V. Writing strategy
US8097860B2 (en) 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US8304033B2 (en) 2009-02-04 2012-11-06 Tel Epion Inc. Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles
TWI515759B (zh) * 2009-05-20 2016-01-01 瑪波微影Ｉｐ公司 用於帶電粒子微影設備的數據途徑
JP5963139B2 (ja) * 2011-10-03 2016-08-03 株式会社Ｐａｒａｍ 電子ビーム描画方法および描画装置
US9490185B2 (en) * 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
US9336998B2 (en) * 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
US9540725B2 (en) 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
JP6161571B2 (ja) * 2014-05-26 2017-07-12 住友重機械イオンテクノロジー株式会社 イオン注入装置
US20160111254A1 (en) 2014-10-16 2016-04-21 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Method And Apparatus
US20160111245A1 (en) * 2014-10-20 2016-04-21 Advanced Ion Beam Technology, Inc. Electrode assembly having pierce electrodes for controlling space charge effects
JP6546509B2 (ja) * 2015-10-28 2019-07-17 株式会社ニューフレアテクノロジー パターン検査方法及びパターン検査装置

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