JP7077029B2 - 光電変換装置、撮像システム、移動体 - Google Patents

光電変換装置、撮像システム、移動体 Download PDF

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Publication number
JP7077029B2
JP7077029B2 JP2018011424A JP2018011424A JP7077029B2 JP 7077029 B2 JP7077029 B2 JP 7077029B2 JP 2018011424 A JP2018011424 A JP 2018011424A JP 2018011424 A JP2018011424 A JP 2018011424A JP 7077029 B2 JP7077029 B2 JP 7077029B2
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Japan
Prior art keywords
photoelectric conversion
circuit
signal
signal line
gain
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JP2018011424A
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Japanese (ja)
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JP2019129491A (ja
JP2019129491A5 (https=
Inventor
祥士 河野
徹 小泉
博男 赤堀
雄介 山下
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Canon Inc
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Canon Inc
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Priority to JP2018011424A priority Critical patent/JP7077029B2/ja
Priority to US16/254,901 priority patent/US10791295B2/en
Publication of JP2019129491A publication Critical patent/JP2019129491A/ja
Publication of JP2019129491A5 publication Critical patent/JP2019129491A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Automatic Focus Adjustment (AREA)
JP2018011424A 2018-01-26 2018-01-26 光電変換装置、撮像システム、移動体 Active JP7077029B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018011424A JP7077029B2 (ja) 2018-01-26 2018-01-26 光電変換装置、撮像システム、移動体
US16/254,901 US10791295B2 (en) 2018-01-26 2019-01-23 Photoelectric conversion apparatus, imaging system, and moving body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018011424A JP7077029B2 (ja) 2018-01-26 2018-01-26 光電変換装置、撮像システム、移動体

Publications (3)

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JP2019129491A JP2019129491A (ja) 2019-08-01
JP2019129491A5 JP2019129491A5 (https=) 2021-03-11
JP7077029B2 true JP7077029B2 (ja) 2022-05-30

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US (1) US10791295B2 (https=)
JP (1) JP7077029B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102838191B1 (ko) * 2020-02-10 2025-07-25 삼성전자주식회사 듀얼 컨버전 게인을 이용하여 hdr 이미지를 구현하기 위한 이미지 센서
CN112492162B (zh) * 2020-11-30 2022-04-01 维沃移动通信有限公司 图像传感器、摄像模组和电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015046761A (ja) 2013-08-28 2015-03-12 キヤノン株式会社 撮像装置、撮像システム及び撮像装置の駆動方法
JP2015128253A (ja) 2013-12-27 2015-07-09 キヤノン株式会社 固体撮像装置およびその駆動方法
JP2017183786A (ja) 2016-03-28 2017-10-05 ルネサスエレクトロニクス株式会社 撮像装置、カメラシステム及び撮像方法
JP2018072390A (ja) 2016-10-24 2018-05-10 オリンパス株式会社 撮像装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001250931A (ja) 2000-03-07 2001-09-14 Canon Inc 固体撮像装置およびこれを用いた撮像システム
JP4311181B2 (ja) 2003-12-05 2009-08-12 ソニー株式会社 半導体装置の制御方法および信号処理方法並びに半導体装置および電子機器
US10070088B2 (en) * 2015-01-05 2018-09-04 Canon Kabushiki Kaisha Image sensor and image capturing apparatus for simultaneously performing focus detection and image generation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015046761A (ja) 2013-08-28 2015-03-12 キヤノン株式会社 撮像装置、撮像システム及び撮像装置の駆動方法
JP2015128253A (ja) 2013-12-27 2015-07-09 キヤノン株式会社 固体撮像装置およびその駆動方法
JP2017183786A (ja) 2016-03-28 2017-10-05 ルネサスエレクトロニクス株式会社 撮像装置、カメラシステム及び撮像方法
JP2018072390A (ja) 2016-10-24 2018-05-10 オリンパス株式会社 撮像装置

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US10791295B2 (en) 2020-09-29
US20190238774A1 (en) 2019-08-01

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