JP7076951B2 - 反射率検出装置 - Google Patents
反射率検出装置 Download PDFInfo
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- 238000001514 detection method Methods 0.000 claims description 34
- 230000001678 irradiating effect Effects 0.000 claims description 31
- 230000003287 optical effect Effects 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0007—Applications not otherwise provided for
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0014—Monitoring arrangements not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/42—Absorption spectrometry; Double beam spectrometry; Flicker spectrometry; Reflection spectrometry
- G01J2003/425—Reflectance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4735—Solid samples, e.g. paper, glass
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- Investigating Or Analysing Materials By Optical Means (AREA)
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Description
W1=W0×(X2-X)/(X2-X1)
W2=W0×(X-X1)/(X2-X1)
により設定し、該第一のレーザー光線の出力がW1となるように第一の出力調整手段を調整し、該第二のレーザー光線の出力がW2となるように第二の出力調整手段を調整して被検出波長Xのレーザー光線を疑似的に生成して被加工物に照射し、該受光素子において受光した反射光の光量Hを検出し、該被検出波長Xを照射した場合の反射率をH/H0により算出する反射率検出装置が提供される。
W1=W0×(X2-X)/(X2-X1)
W2=W0×(X-X1)/(X2-X1)
により設定し、該第一のレーザー光線の出力がW1となるように第一の出力調整手段を調整し、該第二のレーザー光線の出力がW2となるように第二の出力調整手段を調整して被検出波長Xのレーザー光線を疑似的に生成して被加工物に照射し、該受光素子において受光した反射光の光量Hを検出し、該被検出波長Xを照射した場合の反射率をH/H0により算出することから、被検出波長のレーザー光線の発振器を有していなくても、被加工物に被検出波長Xを照射した場合の反射率を算出することができる。
H=H1+(H2-H1)×(X-X1)/(X2-X1) ・・・(1)
H=H1+(H2-H1)×(1600-1000)/(2000-1000)
=H1+(H2-H1)×0.6=0.4×H1+0.6×H2 ・・・(2)
H=H1×(X2-X)/(X2-X1)+H2×(X-X1)/(X2-X1)
・・・(3)
W0=W0×(X2-X)/(X2-X1)+W0×(X-X1)/(X2-X1)
・・・(4)
W1=W0×(X2-X)/(X2-X1) ・・・(5)
W2=W0×(X-X1)/(X2-X1) ・・・(6)
W1=W0×(2000-1600)/(2000-1000)
=W0×0.4 ・・・(7)
W2=W0×(1600-1000)/(2000-1000)
=W0×0.6 ・・・(8)
40:反射率検出装置
42:保持手段
43:移動手段
44(440):レーザー光線照射手段
44b(440b):第一の発振器
44c(440c):第二の発振器
440j:カプラ
45:枠体
48:撮像手段
64:保持テーブル
80:X方向移動手段
82:Y方向移動手段
Claims (3)
- 被加工物にレーザー光線を照射して反射率を検出する反射率検出装置であって、
被加工物を保持する保持手段と、該保持手段に保持された被加工物にレーザー光線を照射するレーザー光線照射手段と、被加工物から反射した反射光を受光する受光素子と、該受光素子が受光した光量と被加工物に照射したレーザー光線の光量とを比較して反射率を算出する反射率算出手段と、から少なくとも構成され、
該レーザー光線照射手段は、反射率を検出したい被検出波長Xよりも短い第一の波長X1のレーザー光線を発振する第一の発振器と、該第一の波長X1のレーザー光線の出力を調整する第一の出力調整手段と、該被検出波長Xよりも長い第二の波長X2のレーザー光線を発振する第二の発振器と、該第二の波長X2のレーザー光線の出力を調整する第二の出力調整手段と、該第一の出力調整手段で調整された第一のレーザー光線と該第二の出力調整手段で調整された第二のレーザー光線とを合体させるカプラと、該カプラで合体されたレーザー光線を集光して該保持手段に保持された被加工物に照射する集光器と、から少なくとも構成され、
被加工物に照射される該カプラで合体されたレーザー光線の光量H0を生成する出力をW0とした場合の該第一のレーザー光線の出力W1、第二のレーザー光線の出力W2を、次式、
W1=W0×(X2-X)/(X2-X1)
W2=W0×(X-X1)/(X2-X1)
により設定し、該第一のレーザー光線の出力がW1となるように第一の出力調整手段を調整し、該第二のレーザー光線の出力がW2となるように第二の出力調整手段を調整して被検出波長Xのレーザー光線を疑似的に生成して被加工物に照射し、
該受光素子において受光した反射光の光量Hを検出し、該被検出波長Xを照射した場合の反射率をH/H0により算出する反射率検出装置。 - 該カプラと該集光器との間にビームスプリッターが配設され、該受光素子は被加工物で反射した戻り光が該ビームスプリッターによって光路が変換される側に配設される請求項1に記載の反射率検出装置。
- 該カプラの下流側にコリメータが配設され、該カプラで合体したレーザー光線が該コリメータにより平行光に生成される請求項1、又は2に記載の反射率検出装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017101638A JP7076951B2 (ja) | 2017-05-23 | 2017-05-23 | 反射率検出装置 |
SG10201803749SA SG10201803749SA (en) | 2017-05-23 | 2018-05-03 | Reflectance detection method and reflectance detection apparatus |
MYPI2018701765A MY190868A (en) | 2017-05-23 | 2018-05-03 | Reflectance detection method and reflectance detection apparatus |
KR1020180055541A KR102298469B1 (ko) | 2017-05-23 | 2018-05-15 | 반사율 검출 방법 및 반사율 검출 장치 |
CN201810478064.0A CN108931501B (zh) | 2017-05-23 | 2018-05-18 | 反射率检测方法和反射率检测装置 |
TW107117300A TWI785048B (zh) | 2017-05-23 | 2018-05-21 | 反射率檢測裝置 |
US15/985,821 US10471536B2 (en) | 2017-05-23 | 2018-05-22 | Reflective detection method and reflectance detection apparatus |
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JP2017101638A JP7076951B2 (ja) | 2017-05-23 | 2017-05-23 | 反射率検出装置 |
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JP2018197665A JP2018197665A (ja) | 2018-12-13 |
JP7076951B2 true JP7076951B2 (ja) | 2022-05-30 |
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US (1) | US10471536B2 (ja) |
JP (1) | JP7076951B2 (ja) |
KR (1) | KR102298469B1 (ja) |
CN (1) | CN108931501B (ja) |
MY (1) | MY190868A (ja) |
SG (1) | SG10201803749SA (ja) |
TW (1) | TWI785048B (ja) |
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CN109374571A (zh) * | 2018-12-07 | 2019-02-22 | 中国科学技术大学 | 一种光探测集成系统 |
JP7253396B2 (ja) * | 2019-01-25 | 2023-04-06 | 株式会社ディスコ | 検査装置 |
Citations (4)
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JP2000046525A (ja) | 1998-07-24 | 2000-02-18 | Dainippon Screen Mfg Co Ltd | 膜厚測定装置 |
JP2001304821A (ja) | 2000-02-16 | 2001-10-31 | Fuji Photo Film Co Ltd | 画像撮像装置及び距離測定方法 |
JP2009262219A (ja) | 2008-04-28 | 2009-11-12 | Disco Abrasive Syst Ltd | レーザー加工装置 |
JP2010217149A (ja) | 2009-03-19 | 2010-09-30 | Tokyo Institute Of Technology | 対象識別装置 |
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JPH08247935A (ja) * | 1995-03-13 | 1996-09-27 | Omron Corp | 光学装置および検出装置 |
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JPH10253528A (ja) * | 1997-03-07 | 1998-09-25 | Seibutsukei Tokutei Sangyo Gijutsu Kenkyu Suishin Kiko | 植物体の分光反射率測定方法、及びその装置 |
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JP2007139632A (ja) * | 2005-11-21 | 2007-06-07 | Olympus Corp | 反射率測定機及び反射率測定方法。 |
JPWO2009078291A1 (ja) * | 2007-12-14 | 2011-04-28 | コニカミノルタオプト株式会社 | 光ピックアップ装置 |
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JP6151557B2 (ja) | 2013-05-13 | 2017-06-21 | 株式会社ディスコ | レーザー加工方法 |
JP2015029048A (ja) * | 2013-07-05 | 2015-02-12 | 富士フイルム株式会社 | レーザ装置及び光音響計測装置 |
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Patent Citations (4)
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US10471536B2 (en) | 2019-11-12 |
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US20180339362A1 (en) | 2018-11-29 |
KR20180128346A (ko) | 2018-12-03 |
TW201901774A (zh) | 2019-01-01 |
JP2018197665A (ja) | 2018-12-13 |
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MY190868A (en) | 2022-05-13 |
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