JP7075529B1 - 複合基板および複合基板の製造方法 - Google Patents

複合基板および複合基板の製造方法 Download PDF

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Publication number
JP7075529B1
JP7075529B1 JP2021097962A JP2021097962A JP7075529B1 JP 7075529 B1 JP7075529 B1 JP 7075529B1 JP 2021097962 A JP2021097962 A JP 2021097962A JP 2021097962 A JP2021097962 A JP 2021097962A JP 7075529 B1 JP7075529 B1 JP 7075529B1
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Japan
Prior art keywords
substrate
support substrate
piezoelectric layer
thickness
piezoelectric
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JP2021097962A
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English (en)
Japanese (ja)
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JP2022189405A (ja
Inventor
美典 谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
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NGK Insulators Ltd
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Publication date
Priority to JP2021097962A priority Critical patent/JP7075529B1/ja
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to EP22751240.7A priority patent/EP4124679A4/en
Priority to CN202280002596.1A priority patent/CN115707351B/zh
Priority to KR1020227024425A priority patent/KR102810044B1/ko
Priority to PCT/JP2022/006547 priority patent/WO2022259627A1/ja
Priority to TW111111277A priority patent/TWI914512B/zh
Priority to JP2022078984A priority patent/JP7640493B2/ja
Application granted granted Critical
Publication of JP7075529B1 publication Critical patent/JP7075529B1/ja
Priority to US17/818,040 priority patent/US20220399872A1/en
Publication of JP2022189405A publication Critical patent/JP2022189405A/ja
Priority to JP2025024840A priority patent/JP7804803B2/ja
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06Joining of crystals
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25Constructional features of resonators using surface acoustic waves
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2021097962A 2021-06-11 2021-06-11 複合基板および複合基板の製造方法 Active JP7075529B1 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2021097962A JP7075529B1 (ja) 2021-06-11 2021-06-11 複合基板および複合基板の製造方法
CN202280002596.1A CN115707351B (zh) 2021-06-11 2022-02-18 复合基板及复合基板的制造方法
KR1020227024425A KR102810044B1 (ko) 2021-06-11 2022-02-18 복합 기판 및 복합 기판의 제조 방법
PCT/JP2022/006547 WO2022259627A1 (ja) 2021-06-11 2022-02-18 複合基板および複合基板の製造方法
EP22751240.7A EP4124679A4 (en) 2021-06-11 2022-02-18 COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE
TW111111277A TWI914512B (zh) 2021-06-11 2022-03-25 複合基板及複合基板的製造方法
JP2022078984A JP7640493B2 (ja) 2021-06-11 2022-05-12 複合基板および複合基板の製造方法
US17/818,040 US20220399872A1 (en) 2021-06-11 2022-08-08 Composite substrate and method of producing composite substrate
JP2025024840A JP7804803B2 (ja) 2021-06-11 2025-02-19 複合基板および複合基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021097962A JP7075529B1 (ja) 2021-06-11 2021-06-11 複合基板および複合基板の製造方法

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JP2022078984A Division JP7640493B2 (ja) 2021-06-11 2022-05-12 複合基板および複合基板の製造方法

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JP7075529B1 true JP7075529B1 (ja) 2022-05-25
JP2022189405A JP2022189405A (ja) 2022-12-22

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JP2021097962A Active JP7075529B1 (ja) 2021-06-11 2021-06-11 複合基板および複合基板の製造方法
JP2022078984A Active JP7640493B2 (ja) 2021-06-11 2022-05-12 複合基板および複合基板の製造方法
JP2025024840A Active JP7804803B2 (ja) 2021-06-11 2025-02-19 複合基板および複合基板の製造方法

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JP2022078984A Active JP7640493B2 (ja) 2021-06-11 2022-05-12 複合基板および複合基板の製造方法
JP2025024840A Active JP7804803B2 (ja) 2021-06-11 2025-02-19 複合基板および複合基板の製造方法

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JP (3) JP7075529B1 (https=)
WO (1) WO2022259627A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023135844A1 (ja) * 2022-01-17 2023-07-20 日本碍子株式会社 複合基板の製造方法
WO2025263278A1 (ja) * 2024-06-21 2025-12-26 京セラ株式会社 弾性波装置、通信装置、圧電基板、および圧電基板の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085648A (ja) 1999-07-15 2001-03-30 Shin Etsu Handotai Co Ltd 貼り合わせウエーハの製造方法および貼り合わせウエーハ
JP2004214505A (ja) 2003-01-07 2004-07-29 Sumitomo Heavy Ind Ltd 表面形状の測定方法、表面形状の測定プログラム及び記録媒体
JP2014192686A (ja) 2013-03-27 2014-10-06 Shin Etsu Chem Co Ltd 圧電性酸化物単結晶ウェーハ及びその製造方法
WO2016158965A1 (ja) 2015-03-30 2016-10-06 京セラ株式会社 素子製造方法
WO2019220713A1 (ja) 2018-05-17 2019-11-21 日本碍子株式会社 圧電性単結晶基板と支持基板との接合体
WO2019244471A1 (ja) 2018-06-22 2019-12-26 日本碍子株式会社 接合体および弾性波素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148957A (ja) * 1994-11-18 1996-06-07 Sumitomo Electric Ind Ltd 圧電薄膜ウェハーおよびその製造法
JPH08274285A (ja) * 1995-03-29 1996-10-18 Komatsu Electron Metals Co Ltd Soi基板及びその製造方法
JP3924810B2 (ja) * 1995-07-19 2007-06-06 松下電器産業株式会社 圧電素子とその製造方法
JP2014086400A (ja) 2012-10-26 2014-05-12 Mitsubishi Heavy Ind Ltd 高速原子ビーム源およびそれを用いた常温接合装置
KR101889237B1 (ko) * 2015-09-15 2018-08-16 엔지케이 인슐레이터 엘티디 복합 기판 및 압전 기판의 두께 경향 추정 방법
JP2019029941A (ja) * 2017-08-02 2019-02-21 株式会社ディスコ 弾性波デバイス用基板の製造方法
EP3771099B1 (en) * 2018-03-20 2024-04-03 NGK Insulators, Ltd. Bonded body of piezoelectric material substrate and supporting substrate
WO2020250490A1 (ja) * 2019-06-11 2020-12-17 日本碍子株式会社 複合基板、弾性波素子および複合基板の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085648A (ja) 1999-07-15 2001-03-30 Shin Etsu Handotai Co Ltd 貼り合わせウエーハの製造方法および貼り合わせウエーハ
JP2004214505A (ja) 2003-01-07 2004-07-29 Sumitomo Heavy Ind Ltd 表面形状の測定方法、表面形状の測定プログラム及び記録媒体
JP2014192686A (ja) 2013-03-27 2014-10-06 Shin Etsu Chem Co Ltd 圧電性酸化物単結晶ウェーハ及びその製造方法
WO2016158965A1 (ja) 2015-03-30 2016-10-06 京セラ株式会社 素子製造方法
WO2019220713A1 (ja) 2018-05-17 2019-11-21 日本碍子株式会社 圧電性単結晶基板と支持基板との接合体
WO2019244471A1 (ja) 2018-06-22 2019-12-26 日本碍子株式会社 接合体および弾性波素子

Also Published As

Publication number Publication date
WO2022259627A1 (ja) 2022-12-15
JP2022189405A (ja) 2022-12-22
TW202315313A (zh) 2023-04-01
JP7804803B2 (ja) 2026-01-22
JP2025068047A (ja) 2025-04-24
JP2022189738A (ja) 2022-12-22
JP7640493B2 (ja) 2025-03-05

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