JP7072462B2 - 半導体装置、焼結金属シートおよび焼結金属シートの製造方法 - Google Patents

半導体装置、焼結金属シートおよび焼結金属シートの製造方法 Download PDF

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JP7072462B2
JP7072462B2 JP2018142168A JP2018142168A JP7072462B2 JP 7072462 B2 JP7072462 B2 JP 7072462B2 JP 2018142168 A JP2018142168 A JP 2018142168A JP 2018142168 A JP2018142168 A JP 2018142168A JP 7072462 B2 JP7072462 B2 JP 7072462B2
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sintered metal
region
low porosity
metal layer
semiconductor device
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JP2018142168A
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Japanese (ja)
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JP2020021756A (ja
JP2020021756A5 (https=
Inventor
智久 鈴木
浩志 守谷
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2018142168A priority Critical patent/JP7072462B2/ja
Priority to US17/261,715 priority patent/US11437338B2/en
Priority to PCT/JP2019/011935 priority patent/WO2020026516A1/ja
Publication of JP2020021756A publication Critical patent/JP2020021756A/ja
Publication of JP2020021756A5 publication Critical patent/JP2020021756A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01361—Chemical or physical modification, e.g. by sintering or anodisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07332—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07341—Controlling the bonding environment, e.g. atmosphere composition or temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Powder Metallurgy (AREA)
JP2018142168A 2018-07-30 2018-07-30 半導体装置、焼結金属シートおよび焼結金属シートの製造方法 Active JP7072462B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018142168A JP7072462B2 (ja) 2018-07-30 2018-07-30 半導体装置、焼結金属シートおよび焼結金属シートの製造方法
US17/261,715 US11437338B2 (en) 2018-07-30 2019-03-20 Semiconductor device, sintered metal sheet, and method for manufacturing sintered metal sheet
PCT/JP2019/011935 WO2020026516A1 (ja) 2018-07-30 2019-03-20 半導体装置、焼結金属シートおよび焼結金属シートの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018142168A JP7072462B2 (ja) 2018-07-30 2018-07-30 半導体装置、焼結金属シートおよび焼結金属シートの製造方法

Publications (3)

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JP2020021756A JP2020021756A (ja) 2020-02-06
JP2020021756A5 JP2020021756A5 (https=) 2021-03-25
JP7072462B2 true JP7072462B2 (ja) 2022-05-20

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US (1) US11437338B2 (https=)
JP (1) JP7072462B2 (https=)
WO (1) WO2020026516A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7527486B2 (ja) * 2021-06-23 2024-08-02 三菱電機株式会社 半導体装置および半導体装置の製造方法
DE102023206889A1 (de) 2023-07-20 2025-01-23 Robert Bosch Gesellschaft mit beschränkter Haftung Kontaktsystem mit einem Bauelement und Verfahren zum Sintermittelauftrag

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014155619A1 (ja) 2013-03-28 2014-10-02 株式会社安川電機 半導体装置、電力変換装置および半導体装置の製造方法
JP2015185559A (ja) 2014-03-20 2015-10-22 三菱電機株式会社 半導体モジュールの製造方法および半導体モジュール
JP2015216160A (ja) 2014-05-08 2015-12-03 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010248617A (ja) 2009-03-26 2010-11-04 Nippon Handa Kk 多孔質銀製シート、金属製部材接合体の製造方法、金属製部材接合体、電気回路接続用バンプの製造方法および電気回路接続用バンプ
US9905532B2 (en) * 2016-03-09 2018-02-27 Toyota Motor Engineering & Manufacturing North America, Inc. Methods and apparatuses for high temperature bonding and bonded substrates having variable porosity distribution formed therefrom
JP6890520B2 (ja) * 2017-10-04 2021-06-18 三菱電機株式会社 電力用半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014155619A1 (ja) 2013-03-28 2014-10-02 株式会社安川電機 半導体装置、電力変換装置および半導体装置の製造方法
JP2015185559A (ja) 2014-03-20 2015-10-22 三菱電機株式会社 半導体モジュールの製造方法および半導体モジュール
JP2015216160A (ja) 2014-05-08 2015-12-03 三菱電機株式会社 電力用半導体装置および電力用半導体装置の製造方法

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JP2020021756A (ja) 2020-02-06
WO2020026516A1 (ja) 2020-02-06
US20210265298A1 (en) 2021-08-26
US11437338B2 (en) 2022-09-06

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