JP7070986B2 - 太陽電池のホイルベースの金属被覆法 - Google Patents
太陽電池のホイルベースの金属被覆法 Download PDFInfo
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- JP7070986B2 JP7070986B2 JP2020009794A JP2020009794A JP7070986B2 JP 7070986 B2 JP7070986 B2 JP 7070986B2 JP 2020009794 A JP2020009794 A JP 2020009794A JP 2020009794 A JP2020009794 A JP 2020009794A JP 7070986 B2 JP7070986 B2 JP 7070986B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 348
- 239000002184 metal Substances 0.000 title claims description 348
- 238000000576 coating method Methods 0.000 title description 22
- 239000011888 foil Substances 0.000 claims description 242
- 239000004065 semiconductor Substances 0.000 claims description 150
- 239000000463 material Substances 0.000 claims description 94
- 239000000758 substrate Substances 0.000 claims description 89
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 150000002739 metals Chemical class 0.000 claims description 7
- 238000000034 method Methods 0.000 description 145
- 239000010410 layer Substances 0.000 description 82
- 230000008569 process Effects 0.000 description 54
- 238000000608 laser ablation Methods 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 28
- 238000003466 welding Methods 0.000 description 22
- 238000005530 etching Methods 0.000 description 20
- 238000007743 anodising Methods 0.000 description 18
- 238000000059 patterning Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 230000000149 penetrating effect Effects 0.000 description 12
- 238000005304 joining Methods 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000013011 mating Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 150000004676 glycans Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001282 polysaccharide Polymers 0.000 description 2
- 239000005017 polysaccharide Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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- Sustainable Energy (AREA)
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- Molecular Biology (AREA)
- Health & Medical Sciences (AREA)
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Description
(項目1)
太陽電池を製造する方法であって、
基板内、又は基板の上方に、複数の交互のN型及びP型半導体領域を形成する工程と、
金属ホイルを上記複数の交互のN型及びP型半導体領域に接着させる工程と、
上記複数の交互のN型及びP型半導体領域の間の位置に対応する領域において、上記金属ホイルの一部のみを通じてレーザーアブレーションを行う工程と、
上記レーザーアブレーションの後、上記複数の交互のN型及びP型半導体領域に対応する、残りの金属ホイルの領域を絶縁する工程と、を備える、方法。
(項目2)
上記残りの金属ホイルの領域を絶縁する工程は、上記残りの金属ホイルを陽極酸化させる工程を含む、項目1に記載の方法。
(項目3)
上記残りの金属ホイルの領域を絶縁する工程は、上記残りの金属ホイルをエッチングする工程を含む、項目1に記載の方法。
(項目4)
上記金属ホイルを接着させる工程の前に、複数の金属シード材料領域を形成して、上記複数の交互のN型及びP型半導体領域のそれぞれに金属シード材料領域をもたらす工程を更に備え、
上記金属ホイルを上記複数の交互のN型及びP型半導体領域に接着させる工程は、上記金属ホイルを上記複数の金属シード材料領域に接着させる工程を含む、項目1に記載の方法。
(項目5)
上記金属ホイルを上記複数の金属シード材料領域に接着させる工程の前に、上記複数の金属シード材料領域の上に絶縁層を形成する工程を更に備え、
上記金属ホイルを上記複数の金属シード材料領域に接着させる工程は、上記絶縁層の領域を突き抜ける工程を含む、項目4に記載の方法。
(項目6)
上記金属ホイルを上記複数の金属シード材料領域に接着させる工程は、レーザー溶接プロセス、熱圧着プロセス、及び超音波接合プロセスからなる群から選択される技術を使用する工程を含む、項目4に記載の方法。
(項目7)
上記複数の金属シード材料領域を形成する工程は、それぞれ、およそ0.3~20マイクロメートルの範囲の厚さを有し、およそ97%超の量のアルミニウム、及びおよそ0~2%の範囲の量のシリコンを含む、アルミニウム領域を形成する工程を含み、
上記金属ホイルを接着する工程は、およそ5~100マイクロメートルの範囲の厚さを有するアルミニウムホイルを接着する工程を含み、
上記残りの金属ホイルの領域を絶縁する工程は、上記アルミニウムホイルの露出表面を、およそ1~20マイクロメートルの範囲の深さまで酸化させることによって上記アルミニウムホイルを陽極酸化させる工程を含む、項目4に記載の方法。
(項目8)
上記金属ホイルの上記一部のみを通じてレーザーアブレーションする工程は、上記金属ホイルの厚さを、上記金属ホイルの全厚さの、およそ80~99%の範囲にわたりレーザーアブレーションする工程を含む、項目1に記載の方法。
(項目9)
上記複数の交互のN型及びP型半導体領域を形成する工程は、上記基板の上方に形成された多結晶シリコン層内に、上記複数の交互のN型及びP型半導体領域を形成する工程を含み、
上記方法は、上記複数の交互のN型及びP型半導体領域それぞれの間にトレンチを形成する工程であって、上記トレンチは一部が上記基板内に延びている、工程を更に備える、項目1に記載の方法。
(項目10)
上記基板は単結晶シリコン基板であり、上記複数の交互のN型及びP型半導体領域を形成する工程は、上記単結晶シリコン基板内に上記複数の交互のN型及びP型半導体領域を形成する工程を含む、項目1に記載の方法。
(項目11)
レーザーアブレーションの前に、上記金属ホイルの少なくとも一部の上にマスク層を形成する工程を更に備える、項目1に記載の方法。
(項目12)
太陽電池を製造する方法であって、
基板内、又は基板の上方に、複数の交互のN型及びP型半導体領域を形成する工程と、
陽極酸化させた金属ホイルを上記複数の交互のN型及びP型半導体領域に接着させる工程であって、上記陽極酸化させた金属ホイルは、陽極酸化させた上面及び陽極酸化させた下面を有し、その間に金属部分を有し、上記陽極酸化させた金属ホイルを上記複数の交互のN型及びP型半導体領域を接着させる工程は、上記陽極酸化させた金属ホイルの上記陽極酸化させた下面の領域を突き抜ける工程を含む、工程と、
上記複数の交互のN型及びP型半導体領域の間の位置に対応する領域において、上記陽極酸化させた金属ホイルの上記陽極酸化させた上面、及び上記金属部分を通じてレーザーアブレーションする工程であって、上記レーザーアブレーションは、上記複数の交互のN型及びP型半導体領域に対応する残りの金属ホイルの領域を絶縁する、上記陽極酸化させた金属ホイルの上記陽極酸化させた下面において終了する、工程とを含む、方法。
(項目13)
上記陽極酸化させた金属ホイルを接着する前に、複数の金属シード材料領域を形成して、上記複数の交互のN型及びP型半導体領域のそれぞれの上に金属シード材料領域をもたらす工程を更に備え、上記陽極酸化させた金属ホイルを上記複数の交互のN型及びP型半導体領域に接着させる工程は、上記陽極酸化させた金属ホイルを上記複数の金属シード材料領域に接着させる工程を含む、項目12に記載の方法。
(項目14)
上記陽極酸化させた金属ホイルを上記複数の金属シード材料領域に接着させる前に、上記複数の金属シード材料領域の上に絶縁層を形成する工程を更に備え、上記陽極酸化させた金属ホイルを上記複数の金属シード材料領域に接着させる工程は、上記絶縁層の領域を突き抜ける工程を含む、項目13に記載の方法。
(項目15)
上記陽極酸化させた金属ホイルを上記複数の金属シード材料領域に接着させる工程は、レーザー溶接プロセス、熱圧着プロセス、及び超音波接合プロセスからなる群から選択される技術を使用する工程を含む、項目13に記載の方法。
(項目16)
上記複数の金属シード材料領域を形成する工程は、それぞれ、およそ0.3~20マイクロメートルの範囲の厚さを有し、およそ97%超の量のアルミニウム、及びおよそ0~2%の範囲の量のシリコンを含む、アルミニウム領域を形成する工程を含み、上記陽極酸化させた金属ホイルを接着する工程はおよそ5~100マイクロメートルの範囲の全厚さを有する陽極酸化させたアルミニウムホイルを接着する工程を含み、上記陽極酸化させた上面、及び上記陽極酸化させた下面はそれぞれ、およそ1~20マイクロメートルの範囲の厚さを成す、項目13に記載の方法。
(項目17)
上記陽極酸化させた金属ホイルを上記複数の交互のN型及びP型半導体領域に接着させる工程の前に、上記陽極酸化させた金属ホイルの上記陽極酸化させた下面の上にレーザー反射、又は吸収フィルムを形成する工程を更に備える、項目12に記載の方法。
(項目18)
上記複数の交互のN型及びP型半導体領域を形成する工程は、上記基板の上方に形成された多結晶シリコン層内に、上記複数の交互のN型及びP型半導体領域を形成する工程を含み、
上記方法は、上記複数の交互のN型及びP型半導体領域それぞれの間にトレンチを形成する工程であって、上記トレンチは一部が上記基板内に延びている、工程を更に備える、項目12に記載の方法。
(項目19)
上記基板は単結晶シリコン基板であり、上記複数の交互のN型及びP型半導体領域を形成する工程は、上記単結晶シリコン基板内に上記複数の交互のN型及びP型半導体領域を形成する工程を含む、項目12に記載の方法。
(項目20)
レーザーアブレーションの前に、上記陽極酸化させた金属ホイルの一部の上にマスク層を形成する工程と、
レーザーアブレーションの後に、上記マスク層を除去する工程と、を更に備える、項目12に記載の方法。
(項目21)
太陽電池であって、
基板と、
基板内、又は基板の上方に配置された、複数の交互のN型及びP型半導体領域と、
上記複数の交互のN型及びP型半導体領域の上方に配置された、導電性コンタクト構造と、を備え、上記導電性コンタクト構造は、
上記複数の交互のN型及びP型半導体領域のそれぞれの上に配置される金属シード材料領域をもたらす、複数の金属シード材料領域と、
上記複数の金属シード材料領域の上に配置された金属ホイルであって、上記金属ホイルは、上記複数の交互のN型及びP型半導体領域に対応する、上記金属ホイルの金属領域を絶縁する、陽極酸化させた部分を有する、金属ホイルと、を含む、太陽電池。
(項目22)
上記金属ホイルの全ての露出表面が陽極酸化されている、項目21に記載の太陽電池。
Claims (7)
- 基板と、
前記基板の面の上方の複数の半導体領域であって、前記複数の半導体領域のそれぞれは、第1の複数の領域のうち対応する領域によって互いから分離される、複数の半導体領域と、
前記複数の半導体領域の上方の複数の金属ホイル部分であって、前記複数の金属ホイル部分は前記複数の半導体領域と電気的に接続され、前記複数の金属ホイル部分のそれぞれは、前記複数の半導体領域のそれぞれに対応し、前記複数の金属ホイル部分のそれぞれは、第2の複数の領域のうち対応する領域によって互いから分離されつつ互いに結合され、前記第2の複数の領域は、前記基板の前記面の上方で前記第1の複数の領域と実質的に位置合わせされている、複数の金属ホイル部分と、
を備える太陽電池であって、
前記複数の半導体領域上に複数の金属シード材料領域を更に備え、前記複数の金属シード材料領域のそれぞれは、前記複数の半導体領域のそれぞれに対応し、前記複数の金属ホイル部分は前記複数の金属シード材料領域上にあり、前記複数の金属ホイル部分のそれぞれは、前記複数の金属シード材料領域のそれぞれに対応し、
前記複数の金属シード材料領域のそれぞれは、上方に凸状であり、前記複数の金属ホイル部分のそれぞれに点溶接されている、太陽電池。 - 前記複数の金属ホイル部分は複数のアルミニウムホイル部分である、請求項1に記載の太陽電池。
- 前記複数の金属シード材料領域はアルミニウムを含む、請求項1又は2に記載の太陽電池。
- 前記複数の金属ホイル部分の外面の少なくとも一部が陽極酸化されている、請求項1から3の何れか一項に記載の太陽電池。
- 前記複数の金属ホイル部分の全ての露出した外面が陽極酸化されている、請求項4に記載の太陽電池。
- 前記複数の金属ホイル部分の露出した外面は陽極酸化されていない、請求項1から4の何れか一項に記載の太陽電池。
- 前記複数の半導体領域は多結晶シリコンを含む、請求項1から6の何れか一項に記載の太陽電池。
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