JP5376590B2 - 配線シート付き太陽電池セルおよび太陽電池モジュール - Google Patents
配線シート付き太陽電池セルおよび太陽電池モジュール Download PDFInfo
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- JP5376590B2 JP5376590B2 JP2009217433A JP2009217433A JP5376590B2 JP 5376590 B2 JP5376590 B2 JP 5376590B2 JP 2009217433 A JP2009217433 A JP 2009217433A JP 2009217433 A JP2009217433 A JP 2009217433A JP 5376590 B2 JP5376590 B2 JP 5376590B2
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- 239000002245 particle Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000006185 dispersion Substances 0.000 claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000004332 silver Substances 0.000 claims description 97
- 229910052709 silver Inorganic materials 0.000 claims description 96
- 239000000463 material Substances 0.000 claims description 58
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 95
- 239000012535 impurity Substances 0.000 description 48
- 238000009792 diffusion process Methods 0.000 description 42
- 229910000679 solder Inorganic materials 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 238000000034 method Methods 0.000 description 19
- 238000002161 passivation Methods 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 239000002243 precursor Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000009434 installation Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910017750 AgSn Inorganic materials 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910016331 Bi—Ag Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910020830 Sn-Bi Inorganic materials 0.000 description 2
- 229910018728 Sn—Bi Inorganic materials 0.000 description 2
- -1 Sn—Bi solder Chemical compound 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910020994 Sn-Zn Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 229910009069 Sn—Zn Inorganic materials 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
L=A・exp[Ea/kT] …(1)
なお、上記の式(1)において、Lは寿命を示し、Aは定数を示し、Eaは活性化エネルギ(eV)を示し、kはボルツマン定数(eV/K)を示し、Tは上記のサンプルが設置された雰囲気の温度の絶対温度(K)を示している。
Claims (2)
- 裏面電極型太陽電池セルと、
配線シートと、を備え、
前記裏面電極型太陽電池セルは、半導体基板と、前記半導体基板の一方の面側に設置された第1導電型用電極と第2導電型用電極とを含むとともに、前記第1導電型用電極および前記第2導電型用電極の前記配線シート側全表面を被覆する導電性粒子分散層を備え、前記導電性粒子分散層は、絶縁性基材と、前記絶縁性基材中に分散される導電性粒子とを含んでおり、
前記配線シートは、絶縁性シートと、前記絶縁性シートの一方の面側に設置された第1導電型用配線と第2導電型用配線とを含み、
前記第1導電型用電極表面を被覆する前記導電性粒子分散層と前記第1導電型用配線との間および前記第2導電型用電極表面を被覆する前記導電性粒子分散層と前記第2導電型用配線との間には、それぞれ、錫を含む導電性接合材が配置されており、
前記第1導電型用電極と前記第1導電型用配線とが前記導電性粒子分散層および前記導電性接合材を介して電気的に接続されているとともに前記第2導電型用電極と前記第2導電型用配線とが前記導電性粒子分散層および前記導電性接合材を介して電気的に接続されており、前記第1導電型用電極および前記第2導電型用電極は銀を含む、配線シート付き太陽電池セル。 - 配線シート付き太陽電池セルを含む太陽電池モジュールであって、
前記配線シート付き太陽電池セルは、裏面電極型太陽電池セルと、配線シートと、を備え、
前記裏面電極型太陽電池セルは、半導体基板と、前記半導体基板の一方の面側に設置された第1導電型用電極と第2導電型用電極とを含むとともに、前記第1導電型用電極および前記第2導電型用電極の前記配線シート側全表面を被覆する導電性粒子分散層を備え、前記導電性粒子分散層は、絶縁性基材と、前記絶縁性基材中に分散される導電性粒子とを含んでおり、
前記配線シートは、絶縁性シートと、前記絶縁性シートの一方の面側に設置された第1導電型用配線と第2導電型用配線とを含み、
前記第1導電型用電極表面を被覆する前記導電性粒子分散層と前記第1導電型用配線との間および前記第2導電型用電極表面を被覆する前記導電性粒子分散層と前記第2導電型用配線との間には、それぞれ、錫を含む導電性接合材が配置されており、
前記配線シート付き太陽電池セルにおいては、前記第1導電型用電極と前記第1導電型用配線とが前記導電性粒子分散層および前記導電性接合材を介して電気的に接続されているとともに前記第2導電型用電極と前記第2導電型用配線とが前記導電性粒子分散層および前記導電性接合材を介して電気的に接続されており、前記第1導電型用電極および前記第2導電型用電極は銀を含む、太陽電池モジュール。
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Publications (2)
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JP2011066312A JP2011066312A (ja) | 2011-03-31 |
JP5376590B2 true JP5376590B2 (ja) | 2013-12-25 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5172783B2 (ja) * | 2009-06-18 | 2013-03-27 | シャープ株式会社 | 配線シート付き太陽電池セルおよび太陽電池モジュール |
EP2605286A1 (en) * | 2011-12-13 | 2013-06-19 | Samsung SDI Co., Ltd. | Photoelectric module |
JP5912741B2 (ja) | 2012-03-27 | 2016-04-27 | 日東電工株式会社 | 接合シート、電子部品およびその製造方法 |
US9231129B2 (en) * | 2014-03-28 | 2016-01-05 | Sunpower Corporation | Foil-based metallization of solar cells |
Family Cites Families (7)
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JPH01146559U (ja) * | 1988-03-30 | 1989-10-09 | ||
JPH08298334A (ja) * | 1995-04-26 | 1996-11-12 | Mitsubishi Electric Corp | 太陽電池板 |
JP2001345469A (ja) * | 2000-06-01 | 2001-12-14 | Canon Inc | 光起電力素子および光起電力素子の製造方法 |
JP4585652B2 (ja) * | 2000-06-01 | 2010-11-24 | キヤノン株式会社 | 光起電力素子及び光起電力素子の製造方法 |
JP4235888B2 (ja) * | 2002-06-07 | 2009-03-11 | 日立化成工業株式会社 | 導電ペースト |
JP2008135654A (ja) * | 2006-11-29 | 2008-06-12 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JPWO2008090718A1 (ja) * | 2007-01-25 | 2010-05-13 | シャープ株式会社 | 太陽電池セル、太陽電池アレイおよび太陽電池モジュール |
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