JP7049894B2 - ボロン系膜の成膜方法および成膜装置 - Google Patents
ボロン系膜の成膜方法および成膜装置 Download PDFInfo
- Publication number
- JP7049894B2 JP7049894B2 JP2018072625A JP2018072625A JP7049894B2 JP 7049894 B2 JP7049894 B2 JP 7049894B2 JP 2018072625 A JP2018072625 A JP 2018072625A JP 2018072625 A JP2018072625 A JP 2018072625A JP 7049894 B2 JP7049894 B2 JP 7049894B2
- Authority
- JP
- Japan
- Prior art keywords
- boron
- based film
- plasma
- forming
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims description 229
- 229910052796 boron Inorganic materials 0.000 title claims description 223
- 238000000034 method Methods 0.000 title claims description 53
- 239000007789 gas Substances 0.000 claims description 205
- 239000000758 substrate Substances 0.000 claims description 74
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 20
- 125000004429 atom Chemical group 0.000 claims description 18
- 150000002500 ions Chemical class 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 17
- 238000009832 plasma treatment Methods 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 9
- 239000012790 adhesive layer Substances 0.000 claims 2
- 125000004430 oxygen atom Chemical group O* 0.000 claims 2
- 239000010408 film Substances 0.000 description 240
- 239000000463 material Substances 0.000 description 17
- 230000005540 biological transmission Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 239000010703 silicon Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- -1 alkyl borane Chemical compound 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910000085 borane Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/27—Relating to heating, ventilation or air conditioning [HVAC] technologies
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018072625A JP7049894B2 (ja) | 2018-04-04 | 2018-04-04 | ボロン系膜の成膜方法および成膜装置 |
| US17/041,767 US11615957B2 (en) | 2018-04-04 | 2019-02-26 | Method for forming boron-based film, formation apparatus |
| PCT/JP2019/007273 WO2019193872A1 (ja) | 2018-04-04 | 2019-02-26 | ボロン系膜の成膜方法および成膜装置 |
| KR1020207030966A KR102493031B1 (ko) | 2018-04-04 | 2019-02-26 | 보론계 막의 성막 방법 및 성막 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018072625A JP7049894B2 (ja) | 2018-04-04 | 2018-04-04 | ボロン系膜の成膜方法および成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019186306A JP2019186306A (ja) | 2019-10-24 |
| JP2019186306A5 JP2019186306A5 (enrdf_load_stackoverflow) | 2021-03-04 |
| JP7049894B2 true JP7049894B2 (ja) | 2022-04-07 |
Family
ID=68341965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018072625A Active JP7049894B2 (ja) | 2018-04-04 | 2018-04-04 | ボロン系膜の成膜方法および成膜装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7049894B2 (enrdf_load_stackoverflow) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001302218A (ja) | 1999-12-27 | 2001-10-31 | National Institute For Materials Science | 立方晶窒化ホウ素及びその気相合成法 |
| JP2006237478A (ja) | 2005-02-28 | 2006-09-07 | Mitsubishi Heavy Ind Ltd | 窒化ホウ素膜の成膜方法及び成膜装置 |
| JP2009099583A (ja) | 2007-10-12 | 2009-05-07 | Ulvac Japan Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
| WO2011083869A1 (ja) | 2010-01-11 | 2011-07-14 | 国立大学法人九州大学 | 立方晶窒化ホウ素コーティング法およびそれにより得られる材料 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05213695A (ja) * | 1992-02-03 | 1993-08-24 | Matsushita Electric Ind Co Ltd | ダイヤモンド薄膜の堆積方法 |
| JPH07300665A (ja) * | 1994-05-02 | 1995-11-14 | Yuken Kogyo Kk | 金属基材のホウ素拡散浸透層・ホウ素膜形成方法 |
-
2018
- 2018-04-04 JP JP2018072625A patent/JP7049894B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001302218A (ja) | 1999-12-27 | 2001-10-31 | National Institute For Materials Science | 立方晶窒化ホウ素及びその気相合成法 |
| JP2006237478A (ja) | 2005-02-28 | 2006-09-07 | Mitsubishi Heavy Ind Ltd | 窒化ホウ素膜の成膜方法及び成膜装置 |
| JP2009099583A (ja) | 2007-10-12 | 2009-05-07 | Ulvac Japan Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
| WO2011083869A1 (ja) | 2010-01-11 | 2011-07-14 | 国立大学法人九州大学 | 立方晶窒化ホウ素コーティング法およびそれにより得られる材料 |
Non-Patent Citations (1)
| Title |
|---|
| Ｓｅｉｉｃｈｉｒｏ Ｍａｔｓｕｍｏｔｏ ａｎｄ Ｗｅｎｊｕｎ Ｚｈａｎｇ，Ｈｉｇｈ－Ｒａｔｅ Ｄｅｐｏｓｉｔｉｏｎ ｏｆ Ｈｉｇｈ－Ｑｕａｌｉｔｙ， Ｔｈｉｃｋ Ｃｕｂｉｃ Ｂｏｒｏｎ Ｎｉｔｒｉｄｅ Ｆｉｌｍｓ ｂｙ Ｂｉａｓ－Ａｓｓｉｓｔｅｄ ＤＣ Ｊｅｔ Ｐｌａｓｍａ Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ ，ＪＡＰＡＮＥＳＥ ＪＯＵＲＮＡＬ ＯＦ ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ，日本，Ｔｈｅ Ｊａｐａｎ Ｓｏｃｉｅｔｙ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，2000年，Ｖｏｌ．３９、Ｎｏ．５Ｂ，ｐｐ．Ｌ４４２－Ｌ４４４ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019186306A (ja) | 2019-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI803603B (zh) | 形成石墨烯構造體的方法及裝置 | |
| TWI735592B (zh) | 氮化矽膜之處理方法及氮化矽膜之形成方法 | |
| JP4435666B2 (ja) | プラズマ処理方法、成膜方法 | |
| TWI407507B (zh) | Plasma processing method | |
| JP2019134062A (ja) | 選択的成膜方法および成膜装置 | |
| JPWO2006106665A1 (ja) | 基板の窒化処理方法および絶縁膜の形成方法 | |
| TW201809347A (zh) | 電漿成膜裝置及基板載置台 | |
| JP5271702B2 (ja) | シリコン酸化膜の形成方法およびシリコン酸化膜の形成装置 | |
| KR100936550B1 (ko) | 석영제부재의 표면 처리 방법, 플라즈마 처리 장치 및 플라즈마 처리 방법 | |
| KR102493031B1 (ko) | 보론계 막의 성막 방법 및 성막 장치 | |
| JP7005367B2 (ja) | ボロン系膜の成膜方法および成膜装置 | |
| JP2018127369A (ja) | グラフェンの異方性エッチング方法 | |
| JP2020147839A (ja) | グラフェン構造体を形成する方法および装置 | |
| JP6861479B2 (ja) | プラズマ成膜方法およびプラズマ成膜装置 | |
| JP7033999B2 (ja) | ボロン系膜の成膜方法および成膜装置 | |
| JP2003168681A (ja) | マイクロ波プラズマ処理装置および処理方法 | |
| JP7049894B2 (ja) | ボロン系膜の成膜方法および成膜装置 | |
| WO2022102463A1 (ja) | 基板処理方法および基板処理装置 | |
| JP6950315B2 (ja) | 成膜方法、ボロン膜、及び成膜装置 | |
| TW201130398A (en) | Microwave plasma processing device and microwave plasma processing method | |
| JP2019102508A (ja) | ボロン系膜の形成方法および形成装置 | |
| WO2022163357A1 (ja) | 成膜方法および成膜装置 | |
| JP2022080926A (ja) | 成膜方法及び成膜装置 | |
| JP2019062045A (ja) | ボロン系膜の平坦化方法およびボロン系膜の形成方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210118 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210118 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210803 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210929 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220301 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220328 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7049894 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |