JP7048372B2 - 熱処理装置および熱処理方法 - Google Patents

熱処理装置および熱処理方法 Download PDF

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Publication number
JP7048372B2
JP7048372B2 JP2018052683A JP2018052683A JP7048372B2 JP 7048372 B2 JP7048372 B2 JP 7048372B2 JP 2018052683 A JP2018052683 A JP 2018052683A JP 2018052683 A JP2018052683 A JP 2018052683A JP 7048372 B2 JP7048372 B2 JP 7048372B2
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Prior art keywords
light
quartz window
intensity
heat treatment
substrate
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JP2018052683A
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Japanese (ja)
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JP2019165141A (ja
Inventor
和彦 布施
仁秀 野崎
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Priority to JP2018052683A priority Critical patent/JP7048372B2/ja
Priority to PCT/JP2018/039801 priority patent/WO2019181046A1/fr
Priority to TW107139252A priority patent/TWI726254B/zh
Publication of JP2019165141A publication Critical patent/JP2019165141A/ja
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Publication of JP7048372B2 publication Critical patent/JP7048372B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2018052683A 2018-03-20 2018-03-20 熱処理装置および熱処理方法 Active JP7048372B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018052683A JP7048372B2 (ja) 2018-03-20 2018-03-20 熱処理装置および熱処理方法
PCT/JP2018/039801 WO2019181046A1 (fr) 2018-03-20 2018-10-26 Appareil de traitement thermique et procédé de traitement thermique
TW107139252A TWI726254B (zh) 2018-03-20 2018-11-06 熱處理裝置及熱處理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018052683A JP7048372B2 (ja) 2018-03-20 2018-03-20 熱処理装置および熱処理方法

Publications (2)

Publication Number Publication Date
JP2019165141A JP2019165141A (ja) 2019-09-26
JP7048372B2 true JP7048372B2 (ja) 2022-04-05

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JP2018052683A Active JP7048372B2 (ja) 2018-03-20 2018-03-20 熱処理装置および熱処理方法

Country Status (3)

Country Link
JP (1) JP7048372B2 (fr)
TW (1) TWI726254B (fr)
WO (1) WO2019181046A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7300365B2 (ja) * 2019-10-21 2023-06-29 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012923A (ja) 1998-06-26 2000-01-14 Sumitomo Heavy Ind Ltd レーザ加工装置の光学部品の劣化診断装置及び方法
JP2001102323A (ja) 1999-09-30 2001-04-13 Matsushita Electric Ind Co Ltd レーザアニール装置および薄膜トランジスタの製造方法
JP2003109910A (ja) 2001-10-01 2003-04-11 Matsushita Electric Ind Co Ltd レーザアニール装置及び方法
JP2003243320A (ja) 2001-12-13 2003-08-29 Ushio Inc 半導体ウエハの熱処理方法
JP2004104071A (ja) 2002-07-17 2004-04-02 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2005093750A (ja) 2003-09-18 2005-04-07 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2006245282A (ja) 2005-03-03 2006-09-14 Sumitomo Heavy Ind Ltd 処理装置及び表面状態評価方法
JP2009246061A (ja) 2008-03-31 2009-10-22 Tokyo Electron Ltd 熱処理装置
JP2012084620A (ja) 2010-10-08 2012-04-26 Mitsubishi Electric Corp レーザ加工装置
JP2014029965A (ja) 2012-07-31 2014-02-13 Japan Steel Works Ltd:The 被処理体表面のモニタリング方法およびモニタリング装置
JP2017135390A (ja) 2011-06-24 2017-08-03 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 新規の熱処理装置
JP2018018909A (ja) 2016-07-27 2018-02-01 住友重機械工業株式会社 レーザ加工機

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414932B (zh) * 2009-11-19 2013-11-11 Asustek Comp Inc 多相位電源供應裝置與其電流調整方法
JP6774800B2 (ja) * 2016-07-06 2020-10-28 株式会社Ｓｃｒｅｅｎホールディングス 半導体装置の製造方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012923A (ja) 1998-06-26 2000-01-14 Sumitomo Heavy Ind Ltd レーザ加工装置の光学部品の劣化診断装置及び方法
JP2001102323A (ja) 1999-09-30 2001-04-13 Matsushita Electric Ind Co Ltd レーザアニール装置および薄膜トランジスタの製造方法
JP2003109910A (ja) 2001-10-01 2003-04-11 Matsushita Electric Ind Co Ltd レーザアニール装置及び方法
JP2003243320A (ja) 2001-12-13 2003-08-29 Ushio Inc 半導体ウエハの熱処理方法
JP2004104071A (ja) 2002-07-17 2004-04-02 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2005093750A (ja) 2003-09-18 2005-04-07 Dainippon Screen Mfg Co Ltd 熱処理装置
JP2006245282A (ja) 2005-03-03 2006-09-14 Sumitomo Heavy Ind Ltd 処理装置及び表面状態評価方法
JP2009246061A (ja) 2008-03-31 2009-10-22 Tokyo Electron Ltd 熱処理装置
JP2012084620A (ja) 2010-10-08 2012-04-26 Mitsubishi Electric Corp レーザ加工装置
JP2017135390A (ja) 2011-06-24 2017-08-03 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 新規の熱処理装置
JP2014029965A (ja) 2012-07-31 2014-02-13 Japan Steel Works Ltd:The 被処理体表面のモニタリング方法およびモニタリング装置
JP2018018909A (ja) 2016-07-27 2018-02-01 住友重機械工業株式会社 レーザ加工機

Also Published As

Publication number Publication date
JP2019165141A (ja) 2019-09-26
WO2019181046A1 (fr) 2019-09-26
TW201941309A (zh) 2019-10-16
TWI726254B (zh) 2021-05-01

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