JP7044894B2 - パルス光ビームのスペクトル特性選択及びパルスタイミング制御 - Google Patents

パルス光ビームのスペクトル特性選択及びパルスタイミング制御 Download PDF

Info

Publication number
JP7044894B2
JP7044894B2 JP2020545695A JP2020545695A JP7044894B2 JP 7044894 B2 JP7044894 B2 JP 7044894B2 JP 2020545695 A JP2020545695 A JP 2020545695A JP 2020545695 A JP2020545695 A JP 2020545695A JP 7044894 B2 JP7044894 B2 JP 7044894B2
Authority
JP
Japan
Prior art keywords
pulse
spectral characteristic
light beam
characteristic adjuster
burst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020545695A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021517353A (ja
JP2021517353A5 (https=
Inventor
オブライエン，ケビン，マイケル
ダフィー，トーマス，パトリック
ソーンズ，ジョシュア，ジョン
Original Assignee
サイマー リミテッド ライアビリティ カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by サイマー リミテッド ライアビリティ カンパニー filed Critical サイマー リミテッド ライアビリティ カンパニー
Publication of JP2021517353A publication Critical patent/JP2021517353A/ja
Publication of JP2021517353A5 publication Critical patent/JP2021517353A5/ja
Application granted granted Critical
Publication of JP7044894B2 publication Critical patent/JP7044894B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10038—Amplitude control
    • H01S3/10046—Pulse repetition rate control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
    • H01S3/073—Gas lasers comprising separate discharge sections in one cavity, e.g. hybrid lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/08009—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10038—Amplitude control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/1305—Feedback control systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/136—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity
    • H01S3/137—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity for stabilising of frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2308—Amplifier arrangements, e.g. MOPA

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Automation & Control Theory (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lasers (AREA)
JP2020545695A 2018-03-30 2019-03-01 パルス光ビームのスペクトル特性選択及びパルスタイミング制御 Active JP7044894B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862650896P 2018-03-30 2018-03-30
US62/650,896 2018-03-30
US201862663308P 2018-04-27 2018-04-27
US62/663,308 2018-04-27
PCT/US2019/020415 WO2019190700A1 (en) 2018-03-30 2019-03-01 Spectral feature selection and pulse timing control of a pulsed light beam

Publications (3)

Publication Number Publication Date
JP2021517353A JP2021517353A (ja) 2021-07-15
JP2021517353A5 JP2021517353A5 (https=) 2021-08-26
JP7044894B2 true JP7044894B2 (ja) 2022-03-30

Family

ID=68058412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020545695A Active JP7044894B2 (ja) 2018-03-30 2019-03-01 パルス光ビームのスペクトル特性選択及びパルスタイミング制御

Country Status (6)

Country Link
US (2) US11526083B2 (https=)
JP (1) JP7044894B2 (https=)
KR (2) KR102462465B1 (https=)
CN (2) CN111937256B (https=)
TW (1) TWI703411B (https=)
WO (1) WO2019190700A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2022609A (en) 2018-03-12 2019-09-18 Asml Netherlands Bv Control System and Method
WO2019190700A1 (en) * 2018-03-30 2019-10-03 Cymer, Llc Spectral feature selection and pulse timing control of a pulsed light beam
TWI749546B (zh) 2019-05-14 2021-12-11 美商希瑪有限責任公司 用於調變光源波長的裝置及方法
KR102562520B1 (ko) 2019-05-22 2023-08-01 사이머 엘엘씨 다수의 레이저 빔을 생성하는 장치 및 방법
US12374853B2 (en) 2019-05-22 2025-07-29 Cymer, Llc Control system for a plurality of deep ultraviolet optical oscillators
CN114144731B (zh) 2019-07-23 2024-04-09 西默有限公司 补偿由重复率偏差引起的波长误差的方法
US12130558B2 (en) 2019-11-08 2024-10-29 Cymer, Llc Radiation system for controlling bursts of pulses of radiation
US12597754B2 (en) 2020-03-23 2026-04-07 Cymer, Llc Predictive control of a pulsed light beam
JP7515001B2 (ja) * 2020-08-18 2024-07-11 サイマー リミテッド ライアビリティ カンパニー 予測的に較正をスケジュール設定する装置及び方法
US20240006838A1 (en) * 2020-12-16 2024-01-04 Cymer, Llc Apparatus for and method of modulating a wavelength of an excimer laser as a function of its repetition frequency

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005501399A (ja) 2001-05-11 2005-01-13 サイマー，　インコーポレイテッド リソグラフィ処理のためのレーザスペクトルエンジニアリング
JP2011249832A (ja) 2011-07-27 2011-12-08 Komatsu Ltd 狭帯域化レーザのスペクトル幅調整装置

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4601036A (en) 1982-09-30 1986-07-15 Honeywell Inc. Rapidly tunable laser
JP2631554B2 (ja) * 1989-05-23 1997-07-16 株式会社小松製作所 レーザの波長制御装置
US6853653B2 (en) 1997-07-22 2005-02-08 Cymer, Inc. Laser spectral engineering for lithographic process
US20030178583A1 (en) 2000-09-18 2003-09-25 Kampherbeek Bert Jan Field emission photo-cathode array for lithography system and lithography system provided with such an array
US7039086B2 (en) * 2001-04-09 2006-05-02 Cymer, Inc. Control system for a two chamber gas discharge laser
US6735225B2 (en) * 2001-06-07 2004-05-11 Lambda Physik Ag Chirp compensation method and apparatus
US7088758B2 (en) * 2001-07-27 2006-08-08 Cymer, Inc. Relax gas discharge laser lithography light source
US7154928B2 (en) * 2004-06-23 2006-12-26 Cymer Inc. Laser output beam wavefront splitter for bandwidth spectrum control
US6963595B2 (en) 2001-08-29 2005-11-08 Cymer, Inc. Automatic gas control system for a gas discharge laser
US7158553B2 (en) * 2003-02-14 2007-01-02 Lambda Physik Ag Master oscillator/power amplifier excimer laser system with pulse energy and pointing control
GB2402230B (en) 2003-05-30 2006-05-03 Xsil Technology Ltd Focusing an optical beam to two foci
EP1517183A1 (en) 2003-08-29 2005-03-23 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6829040B1 (en) 2003-11-07 2004-12-07 Advanced Micro Devices, Inc. Lithography contrast enhancement technique by varying focus with wavelength modulation
TWI396225B (zh) 2004-07-23 2013-05-11 尼康股份有限公司 成像面測量方法、曝光方法、元件製造方法以及曝光裝置
US20060114956A1 (en) * 2004-11-30 2006-06-01 Sandstrom Richard L High power high pulse repetition rate gas discharge laser system bandwidth management
US7534552B2 (en) 2004-12-23 2009-05-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7256870B2 (en) 2005-02-01 2007-08-14 Asml Netherlands B.V. Method and apparatus for controlling iso-dense bias in lithography
US7525638B2 (en) 2005-03-23 2009-04-28 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7286207B2 (en) 2005-04-28 2007-10-23 Infineon Technologies, Ag Exposing a semiconductor wafer using two different spectral wavelengths and adjusting for chromatic aberration
US20070013889A1 (en) 2005-07-12 2007-01-18 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby having an increase in depth of focus
WO2008052153A2 (en) 2006-10-26 2008-05-02 Cornell Research Foundation, Inc. Production of optical pulses at a desired wavelength using soliton self-frequency shift
JP2009010231A (ja) 2007-06-28 2009-01-15 Canon Inc 露光装置およびデバイス製造方法
JP5638389B2 (ja) 2007-08-09 2014-12-10 ヴィルヌーヴ, アランVILLENEUVE, Alain チューナブルモードロックレーザ
US7703069B1 (en) 2007-08-14 2010-04-20 Brion Technologies, Inc. Three-dimensional mask model for photolithography simulation
US8309885B2 (en) * 2009-01-15 2012-11-13 Electro Scientific Industries, Inc. Pulse temporal programmable ultrafast burst mode laser for micromachining
NL2005424A (en) 2009-10-30 2011-05-02 Asml Netherlands Bv Lithographic method and apparatus.
JP2013062484A (ja) 2011-08-24 2013-04-04 Gigaphoton Inc レーザ装置
US9207119B2 (en) 2012-04-27 2015-12-08 Cymer, Llc Active spectral control during spectrum synthesis
DE102012211256A1 (de) 2012-06-29 2014-01-02 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Projektionslithographie
WO2014089120A1 (en) 2012-12-07 2014-06-12 Integrated Plasmonics Corporation Plasmonic spectroscopic sensor and cuvette therefor
JP6151054B2 (ja) * 2013-03-22 2017-06-21 ギガフォトン株式会社 レーザ装置及び極端紫外光生成装置
US9599510B2 (en) 2014-06-04 2017-03-21 Cymer, Llc Estimation of spectral feature of pulsed light beam
US9785050B2 (en) 2015-06-26 2017-10-10 Cymer, Llc Pulsed light beam spectral feature control
JP6585174B2 (ja) 2015-08-07 2019-10-02 ギガフォトン株式会社 狭帯域化レーザ装置
WO2017098625A1 (ja) 2015-12-10 2017-06-15 ギガフォトン株式会社 狭帯域化レーザ装置及びスペクトル線幅計測装置
WO2017102406A1 (en) 2015-12-18 2017-06-22 Stichting Vu Inspection apparatus and method
US9837784B2 (en) * 2015-12-28 2017-12-05 Nlight, Inc. Fully controllable burst shaping individual pulses from picosecond fiber lasers
US9989866B2 (en) 2016-10-17 2018-06-05 Cymer, Llc Wafer-based light source parameter control
US9997888B2 (en) 2016-10-17 2018-06-12 Cymer, Llc Control of a spectral feature of a pulsed light beam
US11526082B2 (en) 2017-10-19 2022-12-13 Cymer, Llc Forming multiple aerial images in a single lithography exposure pass
WO2019190700A1 (en) * 2018-03-30 2019-10-03 Cymer, Llc Spectral feature selection and pulse timing control of a pulsed light beam

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005501399A (ja) 2001-05-11 2005-01-13 サイマー，　インコーポレイテッド リソグラフィ処理のためのレーザスペクトルエンジニアリング
JP2011249832A (ja) 2011-07-27 2011-12-08 Komatsu Ltd 狭帯域化レーザのスペクトル幅調整装置

Also Published As

Publication number Publication date
US11526083B2 (en) 2022-12-13
US20230040812A1 (en) 2023-02-09
JP2021517353A (ja) 2021-07-15
CN111937256A (zh) 2020-11-13
KR20220054463A (ko) 2022-05-02
KR102389918B1 (ko) 2022-04-21
TW202004353A (zh) 2020-01-16
US20210018846A1 (en) 2021-01-21
KR102462465B1 (ko) 2022-11-02
WO2019190700A1 (en) 2019-10-03
CN116979354A (zh) 2023-10-31
KR20200123236A (ko) 2020-10-28
TWI703411B (zh) 2020-09-01
US11768438B2 (en) 2023-09-26
CN111937256B (zh) 2023-08-18

Similar Documents

Publication Publication Date Title
JP7044894B2 (ja) パルス光ビームのスペクトル特性選択及びパルスタイミング制御
US12001144B2 (en) Forming multiple aerial images in a single lithography exposure pass
US9207119B2 (en) Active spectral control during spectrum synthesis
JP5357393B2 (ja) Ｒｅｌａｘガス放電レーザリソグラフィ光源
TWI645451B (zh) 脈衝光束的光譜特徵之控制
TWI678600B (zh) 用於操作光束的方法及裝置
TW202040289A (zh) 光譜特徵控制設備
TW202123570A (zh) 補償重複率偏差引起之波長誤差之方法
JP7480275B2 (ja) 露光システム、レーザ制御パラメータの作成方法、及び電子デバイスの製造方法
CN114730134A (zh) 用于控制辐射脉冲的突发的辐射系统
JP2024543070A (ja) 多焦点結像を容易にする制御電圧閾値選択
JP2025527984A (ja) スペクトル離隔距離を制御する装置及び方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201029

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201029

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20211027

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211111

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220207

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220222

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220317

R150 Certificate of patent or registration of utility model

Ref document number: 7044894

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250