JP7041638B2 - 研磨装置 - Google Patents
研磨装置 Download PDFInfo
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- JP7041638B2 JP7041638B2 JP2019002430A JP2019002430A JP7041638B2 JP 7041638 B2 JP7041638 B2 JP 7041638B2 JP 2019002430 A JP2019002430 A JP 2019002430A JP 2019002430 A JP2019002430 A JP 2019002430A JP 7041638 B2 JP7041638 B2 JP 7041638B2
- Authority
- JP
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- Prior art keywords
- polishing
- substrate
- window member
- radiation thermometer
- infrared radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005498 polishing Methods 0.000 title claims description 166
- 239000000758 substrate Substances 0.000 claims description 66
- 230000005855 radiation Effects 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000009529 body temperature measurement Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 150000002472 indium compounds Chemical class 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 description 17
- 239000002002 slurry Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 239000012530 fluid Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- -1 InGaAs Chemical class 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Description
一態様では、前記窓部材が透過する波長帯域は、1.5マイクロメートル以下、あるいは、6.0マイクロメートル以上である。
一態様では、前記赤外放射温度計は、インジウム化合物から構成された赤外線吸収膜を有している。
一態様では、前記研磨装置は、前記赤外放射温度計によって測定された前記基板の直径方向の温度分布を、記録または表示する機能を有している。
一態様では、前記赤外放射温度計によって測定される前記基板の温度測定周波数は、10Hz以上である。
1a 研磨面
1b 窓穴
2 研磨テーブル
3 研磨ヘッド
4 研磨液供給機構
5 テーブル軸
6 テーブルモータ
7 ヘッドシャフト
8 ヘッドアーム
10 スラリー供給ノズル
11 ノズル旋回軸
24 ドレッシング装置
25 純水供給ノズル
26 ドレッサ
40 アトマイザ
49 支持軸
50 窓部材
50a 表面
50b 裏面
51 赤外放射温度計
51a 受光部
52 埋め込み部
100 制御装置
101 記憶装置
102 表示装置
Claims (8)
- 赤外線を透過する窓部材と、
前記窓部材が埋め込まれた研磨パッドと、
基板を回転可能に保持し、前記基板を前記研磨パッドに押し付ける研磨ヘッドと、
前記窓部材の下方に配置され、前記研磨ヘッドに保持された前記基板の表面温度を測定する赤外放射温度計と、を備え、
前記窓部材の裏面と前記赤外放射温度計の受光部との間には、障害物が存在しない空間が形成されている、研磨装置。 - 赤外線を透過する窓部材と、
前記窓部材が埋め込まれた研磨パッドと、
基板を回転可能に保持し、前記基板を前記研磨パッドに押し付ける研磨ヘッドと、
前記窓部材の下方に配置され、前記研磨ヘッドに保持された前記基板の表面温度を測定する赤外放射温度計と、
前記研磨パッドの減耗に応じて、前記窓部材を下降させるように構成されたアクチュエータと、を備え、
前記アクチュエータは、前記窓部材に接続されている、研磨装置。 - 前記窓部材が透過する波長帯域は、前記赤外放射温度計が温度測定可能な波長帯域を含む、請求項1または2に記載の研磨装置。
- 前記窓部材が透過する波長帯域は、1.5マイクロメートル以下、あるいは、6.0マイクロメートル以上である、請求項1乃至3のいずれか一項に記載の研磨装置。
- 前記赤外放射温度計は、インジウム化合物から構成された赤外線吸収膜を有している、請求項1乃至4のいずれか一項に記載の研磨装置。
- 前記窓部材の材質は、赤外線透過樹脂、フッ化カルシウム、合成石英、ゲルマニウム、フッ化マグネシウム、臭化カリウム、サファイア、シリコン、塩化ナトリウム、ジンクセレン、硫化亜鉛、から選択される、請求項1乃至5のいずれか一項に記載の研磨装置。
- 前記研磨装置は、前記赤外放射温度計によって測定された前記基板の直径方向の温度分布を、記録または表示する機能を有している、請求項1乃至6のいずれか一項に記載の研磨装置。
- 前記赤外放射温度計によって測定される前記基板の温度測定周波数は、10Hz以上である、請求項1乃至7のいずれか一項に記載の研磨装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019002430A JP7041638B2 (ja) | 2019-01-10 | 2019-01-10 | 研磨装置 |
US17/420,861 US20220063050A1 (en) | 2019-01-10 | 2019-10-18 | Polishing apparatus |
PCT/JP2019/041029 WO2020144911A1 (ja) | 2019-01-10 | 2019-10-18 | 研磨装置 |
TW108138923A TW202026102A (zh) | 2019-01-10 | 2019-10-29 | 研磨裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019002430A JP7041638B2 (ja) | 2019-01-10 | 2019-01-10 | 研磨装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2020110859A JP2020110859A (ja) | 2020-07-27 |
JP2020110859A5 JP2020110859A5 (ja) | 2021-11-11 |
JP7041638B2 true JP7041638B2 (ja) | 2022-03-24 |
Family
ID=71520346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019002430A Active JP7041638B2 (ja) | 2019-01-10 | 2019-01-10 | 研磨装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220063050A1 (ja) |
JP (1) | JP7041638B2 (ja) |
TW (1) | TW202026102A (ja) |
WO (1) | WO2020144911A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7108450B2 (ja) * | 2018-04-13 | 2022-07-28 | 株式会社ディスコ | 研磨装置 |
JP2023030756A (ja) | 2021-08-24 | 2023-03-08 | 株式会社荏原製作所 | 研磨装置 |
JP2023078955A (ja) * | 2021-11-26 | 2023-06-07 | 株式会社荏原製作所 | 研磨パッド、基板研磨装置、及び研磨パッドの製造方法 |
JP2024019825A (ja) | 2022-08-01 | 2024-02-14 | 株式会社荏原製作所 | 研磨装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004297062A (ja) | 2003-03-11 | 2004-10-21 | Toyobo Co Ltd | 研磨パッドおよび半導体デバイスの製造方法 |
JP2004363229A (ja) | 2003-06-03 | 2004-12-24 | Matsushita Electric Ind Co Ltd | 半導体ウェハの研磨装置および研磨方法 |
JP2004358638A (ja) | 2003-06-06 | 2004-12-24 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの研磨方法および半導体ウェーハの研磨装置 |
JP2008070825A (ja) | 2006-09-15 | 2008-03-27 | Agc Techno Glass Co Ltd | 赤外線遮蔽膜 |
JP2014154874A (ja) | 2013-02-07 | 2014-08-25 | Toshiba Corp | 膜厚モニタ装置、研磨装置および膜厚モニタ方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2000060650A1 (fr) * | 1999-03-31 | 2000-10-12 | Nikon Corporation | Corps de polissage, dispositif de polissage, procede de reglage du dispositif de polissage, dispositif de mesure de l'epaisseur du film poli ou du point terminal de polissage, procede de fabrication d'un dispositif a semi-conducteur |
US6685537B1 (en) * | 2000-06-05 | 2004-02-03 | Speedfam-Ipec Corporation | Polishing pad window for a chemical mechanical polishing tool |
US6657726B1 (en) * | 2000-08-18 | 2003-12-02 | Applied Materials, Inc. | In situ measurement of slurry distribution |
US6913514B2 (en) * | 2003-03-14 | 2005-07-05 | Ebara Technologies, Inc. | Chemical mechanical polishing endpoint detection system and method |
KR100506942B1 (ko) * | 2003-09-03 | 2005-08-05 | 삼성전자주식회사 | 화학적 기계적 연마장치 |
JP4510526B2 (ja) * | 2004-06-07 | 2010-07-28 | 株式会社バイオエコーネット | 赤外線体温計 |
US7179151B1 (en) * | 2006-03-27 | 2007-02-20 | Freescale Semiconductor, Inc. | Polishing pad, a polishing apparatus, and a process for using the polishing pad |
US9002493B2 (en) * | 2012-02-21 | 2015-04-07 | Stmicroelectronics, Inc. | Endpoint detector for a semiconductor processing station and associated methods |
US9095952B2 (en) * | 2013-01-23 | 2015-08-04 | Applied Materials, Inc. | Reflectivity measurements during polishing using a camera |
US9636797B2 (en) * | 2014-02-12 | 2017-05-02 | Applied Materials, Inc. | Adjusting eddy current measurements |
-
2019
- 2019-01-10 JP JP2019002430A patent/JP7041638B2/ja active Active
- 2019-10-18 WO PCT/JP2019/041029 patent/WO2020144911A1/ja active Application Filing
- 2019-10-18 US US17/420,861 patent/US20220063050A1/en active Pending
- 2019-10-29 TW TW108138923A patent/TW202026102A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004297062A (ja) | 2003-03-11 | 2004-10-21 | Toyobo Co Ltd | 研磨パッドおよび半導体デバイスの製造方法 |
JP2004363229A (ja) | 2003-06-03 | 2004-12-24 | Matsushita Electric Ind Co Ltd | 半導体ウェハの研磨装置および研磨方法 |
JP2004358638A (ja) | 2003-06-06 | 2004-12-24 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの研磨方法および半導体ウェーハの研磨装置 |
JP2008070825A (ja) | 2006-09-15 | 2008-03-27 | Agc Techno Glass Co Ltd | 赤外線遮蔽膜 |
JP2014154874A (ja) | 2013-02-07 | 2014-08-25 | Toshiba Corp | 膜厚モニタ装置、研磨装置および膜厚モニタ方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202026102A (zh) | 2020-07-16 |
US20220063050A1 (en) | 2022-03-03 |
JP2020110859A (ja) | 2020-07-27 |
WO2020144911A1 (ja) | 2020-07-16 |
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