JP7031709B2 - 六方晶化合物半導体の製造方法 - Google Patents

六方晶化合物半導体の製造方法 Download PDF

Info

Publication number
JP7031709B2
JP7031709B2 JP2020156424A JP2020156424A JP7031709B2 JP 7031709 B2 JP7031709 B2 JP 7031709B2 JP 2020156424 A JP2020156424 A JP 2020156424A JP 2020156424 A JP2020156424 A JP 2020156424A JP 7031709 B2 JP7031709 B2 JP 7031709B2
Authority
JP
Japan
Prior art keywords
substrate
compound semiconductor
light
silicon carbide
phase difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020156424A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021004173A (ja
JP2021004173A5 (https=
Inventor
理行 福澤
太郎 西口
智博 川瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2020156424A priority Critical patent/JP7031709B2/ja
Publication of JP2021004173A publication Critical patent/JP2021004173A/ja
Publication of JP2021004173A5 publication Critical patent/JP2021004173A5/ja
Priority to JP2022024778A priority patent/JP7476915B2/ja
Application granted granted Critical
Publication of JP7031709B2 publication Critical patent/JP7031709B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2020156424A 2020-09-17 2020-09-17 六方晶化合物半導体の製造方法 Active JP7031709B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020156424A JP7031709B2 (ja) 2020-09-17 2020-09-17 六方晶化合物半導体の製造方法
JP2022024778A JP7476915B2 (ja) 2020-09-17 2022-02-21 六方晶化合物半導体の歪評価装置、および炭化珪素エピタキシャル基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020156424A JP7031709B2 (ja) 2020-09-17 2020-09-17 六方晶化合物半導体の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2017068433A Division JP6863003B2 (ja) 2017-03-30 2017-03-30 六方晶化合物半導体の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022024778A Division JP7476915B2 (ja) 2020-09-17 2022-02-21 六方晶化合物半導体の歪評価装置、および炭化珪素エピタキシャル基板の製造方法

Publications (3)

Publication Number Publication Date
JP2021004173A JP2021004173A (ja) 2021-01-14
JP2021004173A5 JP2021004173A5 (https=) 2021-03-11
JP7031709B2 true JP7031709B2 (ja) 2022-03-08

Family

ID=74097773

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020156424A Active JP7031709B2 (ja) 2020-09-17 2020-09-17 六方晶化合物半導体の製造方法
JP2022024778A Active JP7476915B2 (ja) 2020-09-17 2022-02-21 六方晶化合物半導体の歪評価装置、および炭化珪素エピタキシャル基板の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2022024778A Active JP7476915B2 (ja) 2020-09-17 2022-02-21 六方晶化合物半導体の歪評価装置、および炭化珪素エピタキシャル基板の製造方法

Country Status (1)

Country Link
JP (2) JP7031709B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7310805B2 (ja) * 2018-05-09 2023-07-19 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000044398A (ja) 1998-05-29 2000-02-15 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法及びそれによって得られた炭化珪素単結晶
WO2015114732A1 (ja) 2014-01-28 2015-08-06 株式会社サイオクス 半導体基板の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006258594A (ja) 2005-03-17 2006-09-28 Sumitomo Metal Mining Co Ltd 自動複屈折測定装置とこれを用いた複屈折測定方法
JP2013203653A (ja) 2012-03-29 2013-10-07 Mitsubishi Chemicals Corp Iii族窒化物結晶の製造方法、iii族窒化物結晶およびiii族窒化物結晶基板
JP5614857B2 (ja) 2012-10-31 2014-10-29 株式会社Sumco シリカガラスルツボの評価方法
WO2016002058A1 (ja) 2014-07-03 2016-01-07 株式会社日立製作所 半導体装置およびその製造方法、パワーモジュール、並びに電力変換装置
WO2017006594A1 (ja) 2015-07-08 2017-01-12 住友電気工業株式会社 炭化珪素半導体基板および炭化珪素半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000044398A (ja) 1998-05-29 2000-02-15 Toyota Central Res & Dev Lab Inc 炭化珪素単結晶の製造方法及びそれによって得られた炭化珪素単結晶
WO2015114732A1 (ja) 2014-01-28 2015-08-06 株式会社サイオクス 半導体基板の製造方法

Also Published As

Publication number Publication date
JP7476915B2 (ja) 2024-05-01
JP2022060389A (ja) 2022-04-14
JP2021004173A (ja) 2021-01-14

Similar Documents

Publication Publication Date Title
JP5023900B2 (ja) エピタキシャルシリコンウェーハ
US5127983A (en) Method of producing single crystal of high-pressure phase material
US10031089B2 (en) Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer
US8514408B2 (en) Method and apparatus for real-time determination of curvature and azimuthal asymmetry of a surface
JP2013513236A (ja) 基板担体の性能を改善する方法
JP3849547B2 (ja) 半導体エピタキシャルウェーハの測定方法、半導体エピタキシャルウェーハの測定装置、半導体エピタキシャルウェーハの製造方法及びコンピュータプログラム
JP7031709B2 (ja) 六方晶化合物半導体の製造方法
JP6863003B2 (ja) 六方晶化合物半導体の製造方法
CN87102726A (zh) 用于气相淀积的方法和装置
JP7079683B2 (ja) 窒化ガリウム結晶基板およびその結晶評価方法
JP6859157B2 (ja) 六方晶化合物半導体の歪評価方法
JP7134427B2 (ja) 結晶格子面分布測定方法
US7129168B2 (en) Method of estimating substrate temperature
JP2022161941A (ja) 窒化ガリウム結晶基板
JPH10193338A (ja) 単結晶の切断装置と方法
JP2006189261A (ja) 半導体基板の温度測定装置及びその利用
JP7141044B2 (ja) 膜厚測定方法
CN114423891B (zh) 氮化物半导体衬底、层叠结构体和氮化物半导体衬底的制造方法
JP2010258207A (ja) 半導体製造装置
JP2011066360A (ja) ヘテロエピウエーハのエピタキシャル層の結晶性評価法
CN113939616A (zh) 制造半导体晶片的方法
WO2020261745A1 (ja) 半導体ウェーハの厚み測定方法及び半導体ウェーハの厚み測定システム
Babu Analysis of the Deposited Diamond Layers on Thin Films
JP2024119415A (ja) エピタキシャル基板の評価方法
Soukhojak et al. Resistivity as a Witness of Local Crystal Growth Conditions

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201015

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201015

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211102

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211130

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220125

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220207

R150 Certificate of patent or registration of utility model

Ref document number: 7031709

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113