JP7031709B2 - 六方晶化合物半導体の製造方法 - Google Patents
六方晶化合物半導体の製造方法 Download PDFInfo
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- JP7031709B2 JP7031709B2 JP2020156424A JP2020156424A JP7031709B2 JP 7031709 B2 JP7031709 B2 JP 7031709B2 JP 2020156424 A JP2020156424 A JP 2020156424A JP 2020156424 A JP2020156424 A JP 2020156424A JP 7031709 B2 JP7031709 B2 JP 7031709B2
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- compound semiconductor
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- phase difference
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- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
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Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020156424A JP7031709B2 (ja) | 2020-09-17 | 2020-09-17 | 六方晶化合物半導体の製造方法 |
| JP2022024778A JP7476915B2 (ja) | 2020-09-17 | 2022-02-21 | 六方晶化合物半導体の歪評価装置、および炭化珪素エピタキシャル基板の製造方法 |
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| JP2020156424A JP7031709B2 (ja) | 2020-09-17 | 2020-09-17 | 六方晶化合物半導体の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2017068433A Division JP6863003B2 (ja) | 2017-03-30 | 2017-03-30 | 六方晶化合物半導体の製造方法 |
Related Child Applications (1)
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| JP2022024778A Division JP7476915B2 (ja) | 2020-09-17 | 2022-02-21 | 六方晶化合物半導体の歪評価装置、および炭化珪素エピタキシャル基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021004173A JP2021004173A (ja) | 2021-01-14 |
| JP2021004173A5 JP2021004173A5 (https=) | 2021-03-11 |
| JP7031709B2 true JP7031709B2 (ja) | 2022-03-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2020156424A Active JP7031709B2 (ja) | 2020-09-17 | 2020-09-17 | 六方晶化合物半導体の製造方法 |
| JP2022024778A Active JP7476915B2 (ja) | 2020-09-17 | 2022-02-21 | 六方晶化合物半導体の歪評価装置、および炭化珪素エピタキシャル基板の製造方法 |
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| JP2022024778A Active JP7476915B2 (ja) | 2020-09-17 | 2022-02-21 | 六方晶化合物半導体の歪評価装置、および炭化珪素エピタキシャル基板の製造方法 |
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| JP (2) | JP7031709B2 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7310805B2 (ja) * | 2018-05-09 | 2023-07-19 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000044398A (ja) | 1998-05-29 | 2000-02-15 | Toyota Central Res & Dev Lab Inc | 炭化珪素単結晶の製造方法及びそれによって得られた炭化珪素単結晶 |
| WO2015114732A1 (ja) | 2014-01-28 | 2015-08-06 | 株式会社サイオクス | 半導体基板の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006258594A (ja) | 2005-03-17 | 2006-09-28 | Sumitomo Metal Mining Co Ltd | 自動複屈折測定装置とこれを用いた複屈折測定方法 |
| JP2013203653A (ja) | 2012-03-29 | 2013-10-07 | Mitsubishi Chemicals Corp | Iii族窒化物結晶の製造方法、iii族窒化物結晶およびiii族窒化物結晶基板 |
| JP5614857B2 (ja) | 2012-10-31 | 2014-10-29 | 株式会社Sumco | シリカガラスルツボの評価方法 |
| WO2016002058A1 (ja) | 2014-07-03 | 2016-01-07 | 株式会社日立製作所 | 半導体装置およびその製造方法、パワーモジュール、並びに電力変換装置 |
| WO2017006594A1 (ja) | 2015-07-08 | 2017-01-12 | 住友電気工業株式会社 | 炭化珪素半導体基板および炭化珪素半導体装置の製造方法 |
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2020
- 2020-09-17 JP JP2020156424A patent/JP7031709B2/ja active Active
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2022
- 2022-02-21 JP JP2022024778A patent/JP7476915B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000044398A (ja) | 1998-05-29 | 2000-02-15 | Toyota Central Res & Dev Lab Inc | 炭化珪素単結晶の製造方法及びそれによって得られた炭化珪素単結晶 |
| WO2015114732A1 (ja) | 2014-01-28 | 2015-08-06 | 株式会社サイオクス | 半導体基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7476915B2 (ja) | 2024-05-01 |
| JP2022060389A (ja) | 2022-04-14 |
| JP2021004173A (ja) | 2021-01-14 |
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