JP7023975B2 - Ｐ型ｐｅｒｃ両面太陽電池及びそのモジュール、システムと製造方法 - Google Patents

Ｐ型ｐｅｒｃ両面太陽電池及びそのモジュール、システムと製造方法 Download PDF

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JP7023975B2
JP7023975B2 JP2019547982A JP2019547982A JP7023975B2 JP 7023975 B2 JP7023975 B2 JP 7023975B2 JP 2019547982 A JP2019547982 A JP 2019547982A JP 2019547982 A JP2019547982 A JP 2019547982A JP 7023975 B2 JP7023975 B2 JP 7023975B2
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laser grooving
back surface
solar cell
silicon wafer
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綱正 林
結彬 方
剛 陳
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Zhejiang Aiko Solar Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
JP2019547982A 2017-03-03 2018-02-28 Ｐ型ｐｅｒｃ両面太陽電池及びそのモジュール、システムと製造方法 Active JP7023975B2 (ja)

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Application Number Priority Date Filing Date Title
CN201710122418.3 2017-03-03
CN201710122418.3A CN107425080B (zh) 2017-03-03 2017-03-03 P型perc双面太阳能电池及其组件、系统和制备方法
PCT/CN2018/077585 WO2018157821A1 (zh) 2017-03-03 2018-02-28 P型perc双面太阳能电池及其组件、系统和制备方法

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JP2020509601A5 JP2020509601A5 (https=) 2021-04-08
JP7023975B2 true JP7023975B2 (ja) 2022-02-22

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US (1) US20200127149A1 (https=)
EP (1) EP3588585B1 (https=)
JP (1) JP7023975B2 (https=)
KR (1) KR102323459B1 (https=)
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WO (1) WO2018157821A1 (https=)

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CN107425080B (zh) * 2017-03-03 2019-11-15 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN107039543B (zh) * 2017-03-03 2019-10-22 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN109638110A (zh) * 2018-12-18 2019-04-16 韩华新能源（启东）有限公司 一种基于双面PERC电池片背面SiNx多层膜结构的制备方法
CN109616556A (zh) * 2018-12-18 2019-04-12 韩华新能源（启东）有限公司 一种硅片背面退火和正面镀膜一体化的方法以及一种电池片的制备方法
CN109888053B (zh) * 2019-01-03 2021-08-31 天津爱旭太阳能科技有限公司 P型perc双面太阳能电池对位印刷方法、制备方法及电池
CN112510099B (zh) * 2020-11-30 2022-05-20 晶科能源(海宁)有限公司 太阳能电池组件、太阳能电池片及其制造方法
CN115084299B (zh) * 2022-06-23 2024-10-01 广东爱旭科技有限公司 一种p型太阳能电池及其制作方法、电池组件和光伏系统
CN117352572A (zh) * 2022-06-28 2024-01-05 四川省普照光新能源有限公司 一种氧化锌-晶硅叠层太阳能电池及其制备方法
CN121078846A (zh) * 2025-06-06 2025-12-05 浙江晶科能源有限公司 光伏电池及其制造方法、叠层电池、光伏组件

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JP2016005003A (ja) 2014-06-17 2016-01-12 エルジー エレクトロニクス インコーポレイティド 太陽電池の後処理装置
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JP2016523452A (ja) 2013-09-25 2016-08-08 晶澳（▲揚▼州）太▲陽▼能科技有限公司 両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池及びその製造方法
CN106098839A (zh) 2016-06-15 2016-11-09 浙江正泰太阳能科技有限公司 一种高效晶硅perc电池的制备方法

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JP2011134999A (ja) 2009-12-25 2011-07-07 Kyocera Corp 太陽電池モジュール
JP2014216652A (ja) 2013-04-22 2014-11-17 エルジー エレクトロニクスインコーポレイティド 太陽電池
JP2016523452A (ja) 2013-09-25 2016-08-08 晶澳（▲揚▼州）太▲陽▼能科技有限公司 両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池及びその製造方法
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JP2016005003A (ja) 2014-06-17 2016-01-12 エルジー エレクトロニクス インコーポレイティド 太陽電池の後処理装置
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WO2018157821A1 (zh) 2018-09-07
EP3588585B1 (en) 2023-02-22
EP3588585A1 (en) 2020-01-01
CN107425080B (zh) 2019-11-15
CN107425080A (zh) 2017-12-01
KR102323459B1 (ko) 2021-11-08
KR20200005535A (ko) 2020-01-15
US20200127149A1 (en) 2020-04-23
JP2020509601A (ja) 2020-03-26
EP3588585A4 (en) 2021-01-06

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