KR102323459B1 - P형 perc 양면 태양 전지 및 그 모듈, 시스템과 제조 방법 - Google Patents

P형 perc 양면 태양 전지 및 그 모듈, 시스템과 제조 방법 Download PDF

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KR102323459B1
KR102323459B1 KR1020197029113A KR20197029113A KR102323459B1 KR 102323459 B1 KR102323459 B1 KR 102323459B1 KR 1020197029113 A KR1020197029113 A KR 1020197029113A KR 20197029113 A KR20197029113 A KR 20197029113A KR 102323459 B1 KR102323459 B1 KR 102323459B1
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laser grooving
aluminum
laser
silicon wafer
solar cell
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KR20200005535A (ko
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캉-청 린
지에빈 팡
강 첸
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광둥 아이코 솔라 에너지 테크놀로지 컴퍼니., 리미티드.
저지앙 아이코 솔라 에너지 테크놀로지 컴퍼니., 리미티드.
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    • H01L31/0684—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H01L21/76—
    • H01L31/022441—
    • H01L31/047—
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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  • Sustainable Energy (AREA)
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KR1020197029113A 2017-03-03 2018-02-28 P형 perc 양면 태양 전지 및 그 모듈, 시스템과 제조 방법 Expired - Fee Related KR102323459B1 (ko)

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CN201710122418.3 2017-03-03
CN201710122418.3A CN107425080B (zh) 2017-03-03 2017-03-03 P型perc双面太阳能电池及其组件、系统和制备方法
PCT/CN2018/077585 WO2018157821A1 (zh) 2017-03-03 2018-02-28 P型perc双面太阳能电池及其组件、系统和制备方法

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KR102323459B1 true KR102323459B1 (ko) 2021-11-08

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US (1) US20200127149A1 (https=)
EP (1) EP3588585B1 (https=)
JP (1) JP7023975B2 (https=)
KR (1) KR102323459B1 (https=)
CN (1) CN107425080B (https=)
WO (1) WO2018157821A1 (https=)

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CN107425080B (zh) * 2017-03-03 2019-11-15 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN107039543B (zh) * 2017-03-03 2019-10-22 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN109638110A (zh) * 2018-12-18 2019-04-16 韩华新能源（启东）有限公司 一种基于双面PERC电池片背面SiNx多层膜结构的制备方法
CN109616556A (zh) * 2018-12-18 2019-04-12 韩华新能源（启东）有限公司 一种硅片背面退火和正面镀膜一体化的方法以及一种电池片的制备方法
CN109888053B (zh) * 2019-01-03 2021-08-31 天津爱旭太阳能科技有限公司 P型perc双面太阳能电池对位印刷方法、制备方法及电池
CN112510099B (zh) * 2020-11-30 2022-05-20 晶科能源(海宁)有限公司 太阳能电池组件、太阳能电池片及其制造方法
CN115084299B (zh) * 2022-06-23 2024-10-01 广东爱旭科技有限公司 一种p型太阳能电池及其制作方法、电池组件和光伏系统
CN117352572A (zh) * 2022-06-28 2024-01-05 四川省普照光新能源有限公司 一种氧化锌-晶硅叠层太阳能电池及其制备方法
CN121078846A (zh) * 2025-06-06 2025-12-05 浙江晶科能源有限公司 光伏电池及其制造方法、叠层电池、光伏组件

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JP7023975B2 (ja) 2022-02-22
WO2018157821A1 (zh) 2018-09-07
EP3588585B1 (en) 2023-02-22
EP3588585A1 (en) 2020-01-01
CN107425080B (zh) 2019-11-15
CN107425080A (zh) 2017-12-01
KR20200005535A (ko) 2020-01-15
US20200127149A1 (en) 2020-04-23
JP2020509601A (ja) 2020-03-26
EP3588585A4 (en) 2021-01-06

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