JP7023974B2 - Ｐ型ｐｅｒｃ両面太陽電池及びそのモジュール、システムと製造方法 - Google Patents

Ｐ型ｐｅｒｃ両面太陽電池及びそのモジュール、システムと製造方法 Download PDF

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JP7023974B2
JP7023974B2 JP2019547972A JP2019547972A JP7023974B2 JP 7023974 B2 JP7023974 B2 JP 7023974B2 JP 2019547972 A JP2019547972 A JP 2019547972A JP 2019547972 A JP2019547972 A JP 2019547972A JP 7023974 B2 JP7023974 B2 JP 7023974B2
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laser grooving
back surface
solar cell
aluminum
silicon wafer
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JP2020509600A (ja
JP2020509600A5 (https=
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綱正 林
結彬 方
剛 陳
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Zhejiang Aiko Solar Energy Technology Co Ltd
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Zhejiang Aiko Solar Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
JP2019547972A 2017-03-03 2018-02-28 Ｐ型ｐｅｒｃ両面太陽電池及びそのモジュール、システムと製造方法 Active JP7023974B2 (ja)

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CN201710122400.3 2017-03-03
CN201710122400.3A CN106887475B (zh) 2017-03-03 2017-03-03 P型perc双面太阳能电池及其组件、系统和制备方法
PCT/CN2018/077591 WO2018157824A1 (zh) 2017-03-03 2018-02-28 P型perc双面太阳能电池及其组件、系统和制备方法

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JP2020509600A5 JP2020509600A5 (https=) 2021-04-15
JP7023974B2 true JP7023974B2 (ja) 2022-02-22

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US (1) US10964828B2 (https=)
EP (1) EP3591714B1 (https=)
JP (1) JP7023974B2 (https=)
KR (1) KR102323460B1 (https=)
CN (1) CN106887475B (https=)
WO (1) WO2018157824A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106952972B (zh) * 2017-03-03 2019-04-19 广东爱旭科技股份有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN106887475B (zh) 2017-03-03 2019-07-05 广东爱旭科技股份有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN107425080B (zh) * 2017-03-03 2019-11-15 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN107039543B (zh) * 2017-03-03 2019-10-22 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN107256898B (zh) * 2017-05-18 2018-08-03 广东爱旭科技股份有限公司 管式perc双面太阳能电池及其制备方法和专用设备
CN108074998B (zh) * 2017-12-22 2024-06-28 广东爱旭科技股份有限公司 管式perc双面太阳电池及其制备方法和专用电镀设备
CN112909105B (zh) * 2021-02-09 2025-11-04 通威太阳能(金堂)有限公司 一种双面电池背面电极及其制备方法和应用

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JP2011134999A (ja) 2009-12-25 2011-07-07 Kyocera Corp 太陽電池モジュール
CN203883015U (zh) 2014-04-11 2014-10-15 东莞职业技术学院 一种晶硅太阳能电池栅线
JP2014216652A (ja) 2013-04-22 2014-11-17 エルジー エレクトロニクスインコーポレイティド 太陽電池
CN203983300U (zh) 2014-06-04 2014-12-03 浙江尖山光电股份有限公司 一种环形细栅多晶电池片
JP2016005003A (ja) 2014-06-17 2016-01-12 エルジー エレクトロニクス インコーポレイティド 太陽電池の後処理装置
WO2016068237A1 (ja) 2014-10-29 2016-05-06 京セラ株式会社 太陽電池モジュール
JP2016523452A (ja) 2013-09-25 2016-08-08 晶澳（▲揚▼州）太▲陽▼能科技有限公司 両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池及びその製造方法
CN106098839A (zh) 2016-06-15 2016-11-09 浙江正泰太阳能科技有限公司 一种高效晶硅perc电池的制备方法

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CN202721137U (zh) * 2012-05-25 2013-02-06 嘉兴优太太阳能有限公司 带渐变结构外框栅线的太阳能电池片
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Publication number Priority date Publication date Assignee Title
JP2011134999A (ja) 2009-12-25 2011-07-07 Kyocera Corp 太陽電池モジュール
JP2014216652A (ja) 2013-04-22 2014-11-17 エルジー エレクトロニクスインコーポレイティド 太陽電池
JP2016523452A (ja) 2013-09-25 2016-08-08 晶澳（▲揚▼州）太▲陽▼能科技有限公司 両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池及びその製造方法
CN203883015U (zh) 2014-04-11 2014-10-15 东莞职业技术学院 一种晶硅太阳能电池栅线
CN203983300U (zh) 2014-06-04 2014-12-03 浙江尖山光电股份有限公司 一种环形细栅多晶电池片
JP2016005003A (ja) 2014-06-17 2016-01-12 エルジー エレクトロニクス インコーポレイティド 太陽電池の後処理装置
WO2016068237A1 (ja) 2014-10-29 2016-05-06 京セラ株式会社 太陽電池モジュール
CN106098839A (zh) 2016-06-15 2016-11-09 浙江正泰太阳能科技有限公司 一种高效晶硅perc电池的制备方法

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Publication number Publication date
US10964828B2 (en) 2021-03-30
CN106887475B (zh) 2019-07-05
EP3591714B1 (en) 2022-12-28
KR20200005536A (ko) 2020-01-15
JP2020509600A (ja) 2020-03-26
EP3591714A1 (en) 2020-01-08
US20200119208A1 (en) 2020-04-16
CN106887475A (zh) 2017-06-23
WO2018157824A1 (zh) 2018-09-07
EP3591714A4 (en) 2020-12-30
KR102323460B1 (ko) 2021-11-08

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