CN106887475B - P型perc双面太阳能电池及其组件、系统和制备方法 - Google Patents

P型perc双面太阳能电池及其组件、系统和制备方法 Download PDF

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Publication number
CN106887475B
CN106887475B CN201710122400.3A CN201710122400A CN106887475B CN 106887475 B CN106887475 B CN 106887475B CN 201710122400 A CN201710122400 A CN 201710122400A CN 106887475 B CN106887475 B CN 106887475B
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laser
alum gate
slotting
grid line
gate line
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CN106887475A (zh
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林纲正
方结彬
陈刚
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Guangdong Aiko Technology Co Ltd
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Guangdong Aiko Technology Co Ltd
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Priority to CN201710122400.3A priority Critical patent/CN106887475B/zh
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Priority to PCT/CN2018/077591 priority patent/WO2018157824A1/zh
Priority to EP18760574.6A priority patent/EP3591714B1/en
Priority to KR1020197029114A priority patent/KR102323460B1/ko
Priority to US16/489,670 priority patent/US10964828B2/en
Priority to JP2019547972A priority patent/JP7023974B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/10—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
CN201710122400.3A 2017-03-03 2017-03-03 P型perc双面太阳能电池及其组件、系统和制备方法 Active CN106887475B (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201710122400.3A CN106887475B (zh) 2017-03-03 2017-03-03 P型perc双面太阳能电池及其组件、系统和制备方法
PCT/CN2018/077591 WO2018157824A1 (zh) 2017-03-03 2018-02-28 P型perc双面太阳能电池及其组件、系统和制备方法
EP18760574.6A EP3591714B1 (en) 2017-03-03 2018-02-28 P-type perc double-sided solar cell, assembly thereof, system thereof and preparation method therefor
KR1020197029114A KR102323460B1 (ko) 2017-03-03 2018-02-28 P형 perc 양면 태양 전지 및 그 모듈, 시스템과 제조 방법
US16/489,670 US10964828B2 (en) 2017-03-03 2018-02-28 Bifacial P-type PERC solar cell and module, system, and preparation method thereof
JP2019547972A JP7023974B2 (ja) 2017-03-03 2018-02-28 Ｐ型ｐｅｒｃ両面太陽電池及びそのモジュール、システムと製造方法

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CN201710122400.3A CN106887475B (zh) 2017-03-03 2017-03-03 P型perc双面太阳能电池及其组件、系统和制备方法

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CN106887475A CN106887475A (zh) 2017-06-23
CN106887475B true CN106887475B (zh) 2019-07-05

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US (1) US10964828B2 (https=)
EP (1) EP3591714B1 (https=)
JP (1) JP7023974B2 (https=)
KR (1) KR102323460B1 (https=)
CN (1) CN106887475B (https=)
WO (1) WO2018157824A1 (https=)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
CN106952972B (zh) * 2017-03-03 2019-04-19 广东爱旭科技股份有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN106887475B (zh) 2017-03-03 2019-07-05 广东爱旭科技股份有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN107425080B (zh) * 2017-03-03 2019-11-15 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN107039543B (zh) * 2017-03-03 2019-10-22 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN107256898B (zh) * 2017-05-18 2018-08-03 广东爱旭科技股份有限公司 管式perc双面太阳能电池及其制备方法和专用设备
CN108074998B (zh) * 2017-12-22 2024-06-28 广东爱旭科技股份有限公司 管式perc双面太阳电池及其制备方法和专用电镀设备
CN112909105B (zh) * 2021-02-09 2025-11-04 通威太阳能(金堂)有限公司 一种双面电池背面电极及其制备方法和应用

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CN202721137U (zh) * 2012-05-25 2013-02-06 嘉兴优太太阳能有限公司 带渐变结构外框栅线的太阳能电池片
CN203883015U (zh) * 2014-04-11 2014-10-15 东莞职业技术学院 一种晶硅太阳能电池栅线
CN203983300U (zh) * 2014-06-04 2014-12-03 浙江尖山光电股份有限公司 一种环形细栅多晶电池片
CN106098839A (zh) * 2016-06-15 2016-11-09 浙江正泰太阳能科技有限公司 一种高效晶硅perc电池的制备方法

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US7354532B2 (en) * 2004-04-13 2008-04-08 E.I. Du Pont De Nemours And Company Compositions of electrically conductive polymers and non-polymeric fluorinated organic acids
JP5495777B2 (ja) * 2009-12-25 2014-05-21 京セラ株式会社 太陽電池モジュール
KR20140126819A (ko) * 2013-04-22 2014-11-03 엘지전자 주식회사 태양 전지
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CN202721137U (zh) * 2012-05-25 2013-02-06 嘉兴优太太阳能有限公司 带渐变结构外框栅线的太阳能电池片
CN203883015U (zh) * 2014-04-11 2014-10-15 东莞职业技术学院 一种晶硅太阳能电池栅线
CN203983300U (zh) * 2014-06-04 2014-12-03 浙江尖山光电股份有限公司 一种环形细栅多晶电池片
CN106098839A (zh) * 2016-06-15 2016-11-09 浙江正泰太阳能科技有限公司 一种高效晶硅perc电池的制备方法

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Publication number Publication date
US10964828B2 (en) 2021-03-30
EP3591714B1 (en) 2022-12-28
KR20200005536A (ko) 2020-01-15
JP2020509600A (ja) 2020-03-26
EP3591714A1 (en) 2020-01-08
US20200119208A1 (en) 2020-04-16
CN106887475A (zh) 2017-06-23
JP7023974B2 (ja) 2022-02-22
WO2018157824A1 (zh) 2018-09-07
EP3591714A4 (en) 2020-12-30
KR102323460B1 (ko) 2021-11-08

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Address after: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong.

Applicant after: Guangdong Asahi Polytron Technologies Inc

Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong.

Applicant before: Guangdong Aiko Solar Energy Technology Co., Ltd.

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Address after: 528000 No.3, Qili Avenue South, Leping Town, Sanshui District, Foshan City, Guangdong Province

Patentee after: Guangdong aixu Technology Co.,Ltd.

Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong.

Patentee before: Guangdong Aixu Technology Co.,Ltd.