CN106057925B - 一种正面电极侧绕背接触p型晶硅太阳电池的制造方法 - Google Patents
一种正面电极侧绕背接触p型晶硅太阳电池的制造方法 Download PDFInfo
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Abstract
本发明公开了一种正面电极侧绕背接触P型晶硅太阳电池的制造方法。该方法包括对硅片进行化学清洗制绒、扩散制PN结、二次清洗去磷硅玻璃、制氮化硅减反射膜、制备正面侧面背面电极和激光刻蚀。本发明的制造方法通过把P型晶硅太阳电池的正面主栅线电极转移到太阳电池背面,从而增加了正面入射光光照面积,提高了太阳电池效率。相比于金属缠绕背接触技术和发射级穿透技术,本发明不需要进行激光穿孔,减少了激光穿孔对硅片的损伤,也有利于太阳电池效率的提高。
Description
技术领域
本发明属于晶硅太阳电池技术领域,具体涉及一种正面电极侧绕背接触P型晶硅太阳电池的制造方法。
背景技术
太阳能光伏发电已经成为替代化石能源的主要绿色能源。太阳电池的技术在不断的进步,现在规模化应用的主要为晶硅太阳电池,晶硅太阳电池提高转换效率的重要手段之一是增加表面入射光的光照面积。其中现有的技术有金属缠绕背接触技术和发射级穿透技术,需要对硅片进行激光穿孔,这样对硅片造成热损伤,最终影响太阳电池的质量。
发明内容
针对上述现有技术的不足,本发明提供一种正面电极侧绕背接触P型晶硅太阳电池的制造方法,旨在既提高太阳电池表面入射光的光照面积,而且在太阳电池的制备过程不需要进行激光穿孔,减少了激光穿孔对硅片的损伤,有利于太阳电池效率的提高。
本发明的技术方案为:
一种正面电极侧绕背接触P型晶硅太阳电池的制造方法,包括P型硅片侧面银电极的制备。
上述正面电极侧绕背接触P型晶硅太阳电池的制造方法,具体包括如下步骤:
(1)化学清洗制绒:采用氢氧化钠溶液或者氢氧化钾溶液(优选质量分数不超过50%的较低浓度),去掉P型硅片表面线切割损伤层,反应形成绒面,将P型硅片表面的反射率降低至9~11%;
(2)液态磷源扩散:采用液态磷源,三氯氧磷与氧气在高温扩散炉内反应,在P型硅片表面进行扩散,形成N型扩散层,从而形成PN结;
(3)二次清洗:采用氢氟酸溶液去掉硅片表面扩散时产生的磷硅玻璃;
(4)沉积氮化硅减反射膜:采用PECVD法在硅片正面沉积一层氮化硅薄膜,将硅片的表面反射率由制绒后的9~11%降至3~5%;
(5)丝网印刷正面银细栅线电极,烘干;
(6)丝网印刷背面银细栅线和银主栅线电极,烘干,背面银细栅线电极和银主栅线电极均印刷在扩散层上;
(7)丝网印刷背面铝背场和银铝主栅线电极,烘干;
(8)制备侧面银电极:侧面银电极是在与正面银细栅线方向垂直的两个侧面上全覆盖银电极,要求正面银细栅线和背面银细栅线均与侧面银电极相接;
(9)烧结形成铝硅合金层和欧姆接触;
(10)激光刻蚀。
进一步地,清洗制绒后的硅片进行磷源气态扩散,扩散时背面加挡片,减少铝背场位置扩散进磷原子,增加了太阳电池背表面复合;且背面未遮挡部分的扩散层在背面银细栅线电极和银主栅线电极位置。扩散夹具需保证两个相对的侧面银电极面在扩散时无遮挡。硅片正面、侧面银电极面和背面未遮挡部分均为扩散面,形成PN结。
进一步地,正面印刷银细栅线,且正面银细栅线延伸至硅片边缘,进行烘干。然后印刷背面银细栅线和背面银主栅线,烘干。再印刷背面铝背场和背面银铝主栅线,烘干。再在两个侧面采用涂银浆法或者电子束蒸镀等方法全覆盖银电极,侧面银电极与正面和背面银细栅线相接,侧面银电极可几百片扩散片叠在一起同时制作,然后进行烧结。
进一步地,太阳电池的激光刻蚀工序放在最后一道,激光刻蚀切断背面扩散层,隔离银电极和铝电极。
本发明的有益效果在于:
本发明通过把正面主栅线电极转移到太阳电池背面,从而增加了正面入射光光照面积提高了太阳电池效率。相比于金属缠绕背接触技术和发射级穿透技术,本发明不需要进行激光穿孔,减少了激光穿孔对硅片的损伤,也有利于太阳电池效率的提高。
附图说明
图1为液态磷源扩散后硅片的正面扩散面。
图2为液态磷源扩散后硅片的背面,其中,2和4为扩散时未被挡片遮挡的扩散面,3为扩散时被挡片遮挡的面。
图3为太阳电池的正面细栅线银电极。
图4为太阳电池的背面电极。其中,6和13为背面对称位置的银细栅线电极,7和12为背面对称位置的银主栅线电极,8为激光刻蚀槽,9为铝背场电极,10和11为背面对称位置的银铝主栅线电极。
图5为太阳电池侧视图,其中,14为正面细栅线银电极,15为侧面银电极,16为背面细栅线银电极。
图6为太阳电池截面图,其中,17为正面银细栅线,18为氮化硅减反射膜,19为扩散层N型C-Si,20为侧面银电极,21为基体P型C-Si,22为激光刻蚀槽,23为背面银细栅线电极,24为背面银主栅线电极,25为铝背场电极烧结后形成的铝硅合金层,26为铝背场电极,27为背面银铝主栅线电极。
具体实施方式
下面结合具体实施例对本发明做进一步详细说明,但本发明并不限于此。
实施例1
一种正面电极侧绕背接触P型晶硅太阳电池的制造方法,包括如下步骤:
(1)化学清洗制绒:采用低浓度的氢氧化钠溶液或者氢氧化钾溶液,去掉P型硅片表面线切割损伤层,反应形成绒面,将P型硅片表面的反射率降低至9~11%;
(2)液态磷源扩散:采用液态磷源,三氯氧磷与氧气在高温扩散炉内反应,在P型硅片表面进行扩散,形成N型扩散层,从而形成PN结;
(3)二次清洗:采用氢氟酸溶液去掉硅片表面扩散时产生的磷硅玻璃;
(4)沉积氮化硅减反射膜:采用PECVD法在硅片正面沉积一层氮化硅薄膜,将硅片的表面反射率由制绒后的9~11%降至3~5%;
(5)丝网印刷正面银细栅线电极,烘干;
(6)丝网印刷背面银细栅线和银主栅线电极,烘干,背面银细栅线电极和银主栅线电极均印刷在扩散层上;
(7)丝网印刷背面铝背场和银铝主栅线电极,烘干;
(8)制备侧面银电极:侧面银电极是在与正面银细栅线方向垂直的两个侧面上全覆盖银电极,可在整齐叠起来的几百片硅片两个侧面银电极面涂银浆或者银胶,再进行烘干,要求正面银细栅线和背面银细栅线均与侧面银电极相接;
(9)烧结形成铝硅合金层和欧姆接触;
(10)激光刻蚀:激光刻蚀切断背面扩散层,隔离银电极和铝电极。
实施例2
一种正面电极侧绕背接触P型晶硅太阳电池的制造方法,包括如下步骤:
(1)化学清洗制绒:采用低浓度的氢氧化钠溶液或者氢氧化钾溶液,去掉P型硅片表面线切割损伤层,反应形成绒面,将P型硅片表面的反射率降低至9~11%;
(2)液态磷源扩散:采用液态磷源,三氯氧磷与氧气在高温扩散炉内反应,在P型硅片表面进行扩散,形成N型扩散层,从而形成PN结;
(3)二次清洗:采用氢氟酸溶液去掉硅片表面扩散时产生的磷硅玻璃;
(4)沉积氮化硅减反射膜:采用PECVD法在硅片正面沉积一层氮化硅薄膜,将硅片的表面反射率由制绒后的9~11%降至3~5%;
(5)丝网印刷正面银细栅线电极,烘干;
(6)丝网印刷背面银细栅线和银主栅线电极,烘干,背面银细栅线电极和银主栅线电极均印刷在扩散层上;
(7)丝网印刷背面铝背场和银铝主栅线电极,烘干;
(8)烧结形成铝硅合金层和欧姆接触;
(9)制备侧面银电极:侧面银电极是在与正面银细栅线方向垂直的两个侧面上全覆盖银电极,可将整齐叠起来的几百片硅片两个侧面银电极面通过热蒸发、双离子束溅射、电子束蒸发、磁控溅射等方法镀银电极;
(10)激光刻蚀:激光刻蚀切断背面扩散层,隔离银电极和铝电极。
Claims (4)
1.一种正面电极侧绕背接触P型晶硅太阳电池的制造方法,包括P型硅片侧面银电极的制备,其特征在于,具体包括如下步骤:
(1)化学清洗制绒:采用氢氧化钠溶液或者氢氧化钾溶液,去掉P型硅片表面线切割损伤层,反应形成绒面,将P型硅片表面的反射率降低至9~11%;
(2)液态磷源扩散:采用液态磷源,三氯氧磷与氧气在高温扩散炉内反应,在P型硅片表面进行扩散,形成N型扩散层,从而形成PN结;
(3)二次清洗:采用氢氟酸溶液去掉硅片表面扩散时产生的磷硅玻璃;
(4)沉积氮化硅减反射膜:采用PECVD法在硅片正面沉积一层氮化硅薄膜,将硅片的表面反射率由制绒后的9~11%降至3~5%;
(5)丝网印刷正面银细栅线电极,烘干;
(6)丝网印刷背面银细栅线和背面银主栅线电极,烘干,背面银细栅线电极和背面银主栅线电极均印刷在扩散层上;
(7)丝网印刷背面铝背场和背面银铝主栅线电极,烘干;
(8)制备侧面银电极:侧面银电极是在与正面银细栅线方向垂直的两个侧面上全覆盖银电极,要求正面银细栅线和背面银细栅线均与侧面银电极相接;
(9)烧结形成铝硅合金层和欧姆接触;
(10)激光刻蚀。
2.根据权利要求1所述的正面电极侧绕背接触P型晶硅太阳电池的制造方法,其特征在于,清洗制绒后的硅片进行磷源气态扩散,扩散时背面加挡片,减少铝背场位置扩散进磷原子增加了太阳电池背表面复合;且背面两边未遮挡部分的扩散层在背面银细栅线电极和背面银主栅线电极位置;扩散夹具需保证两个相对的侧面银电极面在扩散时无遮挡;硅片正面、侧面银电极面和背面未遮挡部分均为扩散面,形成PN结。
3.根据权利要求1所述的正面电极侧绕背接触P型晶硅太阳电池的制造方法,其特征在于,正面印刷银细栅线,且正面银细栅线延伸至硅片边缘,进行烘干;然后印刷背面银细栅线和银主栅线,烘干;再印刷背面铝背场和银铝主栅线,烘干;再在两个侧面采用涂银浆法或者电子束蒸镀方法全覆盖银电极,侧面银电极与正面银细栅线和背面银细栅线相接,侧面银电极采用几百片扩散片整齐地叠在一起同时制作,然后进行烧结。
4.根据权利要求1所述的正面电极侧绕背接触P型晶硅太阳电池的制造方法,其特征在于,太阳电池的激光刻蚀工序放在最后一道,激光刻蚀切断扩散层,隔离背面银电极和背面铝电极。
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