CN107039544B - P型perc双面太阳能电池及其制备方法、组件和系统 - Google Patents
P型perc双面太阳能电池及其制备方法、组件和系统 Download PDFInfo
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- CN107039544B CN107039544B CN201710123797.8A CN201710123797A CN107039544B CN 107039544 B CN107039544 B CN 107039544B CN 201710123797 A CN201710123797 A CN 201710123797A CN 107039544 B CN107039544 B CN 107039544B
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 25
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Development (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
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CN201710123797.8A CN107039544B (zh) | 2017-03-03 | 2017-03-03 | P型perc双面太阳能电池及其制备方法、组件和系统 |
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CN201710123797.8A CN107039544B (zh) | 2017-03-03 | 2017-03-03 | P型perc双面太阳能电池及其制备方法、组件和系统 |
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CN107039544A CN107039544A (zh) | 2017-08-11 |
CN107039544B true CN107039544B (zh) | 2020-08-04 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107887453B (zh) * | 2017-10-10 | 2019-03-15 | 横店集团东磁股份有限公司 | 一种双面氧化铝p型perc太阳能电池及制作方法 |
CN108269863A (zh) * | 2017-12-26 | 2018-07-10 | 晶澳太阳能有限公司 | 一种高抗机械载荷晶硅电池 |
CN110676346A (zh) * | 2019-09-25 | 2020-01-10 | 南通苏民新能源科技有限公司 | 一种perc电池激光开槽的制作方法 |
CN111129209A (zh) * | 2019-11-20 | 2020-05-08 | 南通苏民新能源科技有限公司 | 一种perc电池电极复合工艺 |
CN111129213A (zh) * | 2019-12-11 | 2020-05-08 | 中国电子科技集团公司第十八研究所 | 一种双面太阳电池的栅线布局方法 |
CN113257952B (zh) * | 2021-03-31 | 2023-02-28 | 天津爱旭太阳能科技有限公司 | 双面太阳能电池及其制备方法 |
CN113306272A (zh) * | 2021-06-21 | 2021-08-27 | 江苏润阳世纪光伏科技有限公司 | 一种丝网印刷生产用的新型网版图形制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103489934A (zh) * | 2013-09-25 | 2014-01-01 | 晶澳(扬州)太阳能科技有限公司 | 一种双面透光的局部铝背场太阳能电池及其制备方法 |
CN203733811U (zh) * | 2014-01-06 | 2014-07-23 | 金坛正信光伏电子有限公司 | 一种具有与主栅线相互平行设置的副主栅线的电池片 |
CN105405901A (zh) * | 2015-11-10 | 2016-03-16 | 苏州阿特斯阳光电力科技有限公司 | 局部接触背钝化太阳能电池 |
CN106057971A (zh) * | 2016-06-15 | 2016-10-26 | 浙江正泰太阳能科技有限公司 | 一种高效晶硅perc电池的制备方法 |
CN106252443A (zh) * | 2015-06-09 | 2016-12-21 | 太阳世界创新有限公司 | 太阳能电池阵列 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140261666A1 (en) * | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Methods of manufacturing a low cost solar cell device |
US9786800B2 (en) * | 2013-10-15 | 2017-10-10 | Solarworld Americas Inc. | Solar cell contact structure |
US20160049540A1 (en) * | 2014-08-13 | 2016-02-18 | Solexel, Inc. | Rear wide band gap passivated perc solar cells |
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2017
- 2017-03-03 CN CN201710123797.8A patent/CN107039544B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103489934A (zh) * | 2013-09-25 | 2014-01-01 | 晶澳(扬州)太阳能科技有限公司 | 一种双面透光的局部铝背场太阳能电池及其制备方法 |
CN203733811U (zh) * | 2014-01-06 | 2014-07-23 | 金坛正信光伏电子有限公司 | 一种具有与主栅线相互平行设置的副主栅线的电池片 |
CN106252443A (zh) * | 2015-06-09 | 2016-12-21 | 太阳世界创新有限公司 | 太阳能电池阵列 |
CN105405901A (zh) * | 2015-11-10 | 2016-03-16 | 苏州阿特斯阳光电力科技有限公司 | 局部接触背钝化太阳能电池 |
CN106057971A (zh) * | 2016-06-15 | 2016-10-26 | 浙江正泰太阳能科技有限公司 | 一种高效晶硅perc电池的制备方法 |
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Address after: 528000 No.3, Qili Avenue South, Leping Town, Sanshui District, Foshan City, Guangdong Province Patentee after: Guangdong aixu Technology Co.,Ltd. Address before: No.69, C District, Sanshui Industrial Park, Foshan, Guangdong 528000 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address after: No.69, C District, Sanshui Industrial Park, Foshan, Guangdong 528000 Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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