JP7019346B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7019346B2
JP7019346B2 JP2017164943A JP2017164943A JP7019346B2 JP 7019346 B2 JP7019346 B2 JP 7019346B2 JP 2017164943 A JP2017164943 A JP 2017164943A JP 2017164943 A JP2017164943 A JP 2017164943A JP 7019346 B2 JP7019346 B2 JP 7019346B2
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Prior art keywords
oxide
transistor
film
insulator
conductor
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Expired - Fee Related
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JP2017164943A
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Japanese (ja)
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JP2018041958A (ja
JP2018041958A5 (https=
Inventor
佑太 遠藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
JP2017164943A 2016-08-31 2017-08-30 半導体装置 Expired - Fee Related JP7019346B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016169448 2016-08-31
JP2016169448 2016-08-31

Publications (3)

Publication Number Publication Date
JP2018041958A JP2018041958A (ja) 2018-03-15
JP2018041958A5 JP2018041958A5 (https=) 2020-10-08
JP7019346B2 true JP7019346B2 (ja) 2022-02-15

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JP2017164943A Expired - Fee Related JP7019346B2 (ja) 2016-08-31 2017-08-30 半導体装置

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US (2) US9978879B2 (https=)
JP (1) JP7019346B2 (https=)
CN (1) CN107863352A (https=)
TW (1) TW201826531A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019220259A1 (ja) * 2018-05-17 2019-11-21 株式会社半導体エネルギー研究所 記憶装置、半導体装置、および電子機器
WO2020084415A1 (ja) * 2018-10-26 2020-04-30 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
KR102914910B1 (ko) * 2018-10-26 2026-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물의 제작 방법, 반도체 장치의 제작 방법
CN113491006B (zh) * 2019-02-28 2025-09-23 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
CN109873037A (zh) * 2019-03-20 2019-06-11 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、显示装置
JP7510431B2 (ja) * 2019-10-11 2024-07-03 株式会社半導体エネルギー研究所 記憶装置
JP7679305B2 (ja) * 2019-11-08 2025-05-19 株式会社半導体エネルギー研究所 半導体装置
WO2024074969A1 (ja) * 2022-10-07 2024-04-11 株式会社半導体エネルギー研究所 記憶装置
KR102793003B1 (ko) * 2022-11-30 2025-04-09 한국생산기술연구원 강유전체 전계 효과 트랜지스터 및 이를 제조하는 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160172500A1 (en) 2014-12-10 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Method for Manufacturing the Same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
TWI495108B (zh) * 2008-07-31 2015-08-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
EP2494597A4 (en) 2009-10-30 2015-03-18 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
JP5497417B2 (ja) 2009-12-10 2014-05-21 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
JP2011138934A (ja) 2009-12-28 2011-07-14 Sony Corp 薄膜トランジスタ、表示装置および電子機器
KR102436902B1 (ko) * 2010-04-02 2022-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012002292A1 (en) * 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102115344B1 (ko) 2010-08-27 2020-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US9082860B2 (en) * 2011-03-31 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102100425B1 (ko) * 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US9029863B2 (en) * 2012-04-20 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
DE102013207324A1 (de) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
TWI761605B (zh) * 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9425217B2 (en) * 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6711642B2 (ja) * 2015-02-25 2020-06-17 株式会社半導体エネルギー研究所 半導体装置
US10014325B2 (en) 2016-03-10 2018-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10741587B2 (en) 2016-03-11 2020-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method the same
US10333004B2 (en) 2016-03-18 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, semiconductor wafer, module and electronic device
KR102320483B1 (ko) 2016-04-08 2021-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6968567B2 (ja) 2016-04-22 2021-11-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10032918B2 (en) 2016-04-22 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160172500A1 (en) 2014-12-10 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device and Method for Manufacturing the Same

Also Published As

Publication number Publication date
CN107863352A (zh) 2018-03-30
US20180061989A1 (en) 2018-03-01
US20180269327A1 (en) 2018-09-20
US10199509B2 (en) 2019-02-05
TW201826531A (zh) 2018-07-16
JP2018041958A (ja) 2018-03-15
US9978879B2 (en) 2018-05-22

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