CN107863352A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN107863352A CN107863352A CN201710742723.2A CN201710742723A CN107863352A CN 107863352 A CN107863352 A CN 107863352A CN 201710742723 A CN201710742723 A CN 201710742723A CN 107863352 A CN107863352 A CN 107863352A
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- Prior art keywords
- oxide
- transistor
- insulator
- conductor
- film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 130
- 239000001301 oxygen Substances 0.000 claims abstract description 130
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- 230000001151 other effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0128—Manufacturing their channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-169448 | 2016-08-31 | ||
| JP2016169448 | 2016-08-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107863352A true CN107863352A (zh) | 2018-03-30 |
Family
ID=61243565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710742723.2A Pending CN107863352A (zh) | 2016-08-31 | 2017-08-25 | 半导体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9978879B2 (https=) |
| JP (1) | JP7019346B2 (https=) |
| CN (1) | CN107863352A (https=) |
| TW (1) | TW201826531A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020187237A1 (zh) * | 2019-03-20 | 2020-09-24 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法和显示装置 |
| CN113491006A (zh) * | 2019-02-28 | 2021-10-08 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019220259A1 (ja) * | 2018-05-17 | 2019-11-21 | 株式会社半導体エネルギー研究所 | 記憶装置、半導体装置、および電子機器 |
| WO2020084415A1 (ja) * | 2018-10-26 | 2020-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| KR102914910B1 (ko) * | 2018-10-26 | 2026-01-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물의 제작 방법, 반도체 장치의 제작 방법 |
| JP7510431B2 (ja) * | 2019-10-11 | 2024-07-03 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP7679305B2 (ja) * | 2019-11-08 | 2025-05-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2024074969A1 (ja) * | 2022-10-07 | 2024-04-11 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| KR102793003B1 (ko) * | 2022-11-30 | 2025-04-09 | 한국생산기술연구원 | 강유전체 전계 효과 트랜지스터 및 이를 제조하는 방법 |
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| CN103681805A (zh) * | 2012-09-14 | 2014-03-26 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
| CN104247030A (zh) * | 2012-04-20 | 2014-12-24 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| US20160172500A1 (en) * | 2014-12-10 | 2016-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Method for Manufacturing the Same |
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| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
| JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
| TWI495108B (zh) * | 2008-07-31 | 2015-08-01 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| EP2494597A4 (en) | 2009-10-30 | 2015-03-18 | Semiconductor Energy Lab | SEMICONDUCTOR COMPONENT |
| JP5497417B2 (ja) | 2009-12-10 | 2014-05-21 | 富士フイルム株式会社 | 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置 |
| JP2011138934A (ja) | 2009-12-28 | 2011-07-14 | Sony Corp | 薄膜トランジスタ、表示装置および電子機器 |
| KR102436902B1 (ko) * | 2010-04-02 | 2022-08-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2012002292A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102115344B1 (ko) | 2010-08-27 | 2020-05-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치, 반도체 장치 |
| US9024317B2 (en) | 2010-12-24 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device |
| US9082860B2 (en) * | 2011-03-31 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102100425B1 (ko) * | 2011-12-27 | 2020-04-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
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| US8947158B2 (en) | 2012-09-03 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
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| KR102320483B1 (ko) | 2016-04-08 | 2021-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP6968567B2 (ja) | 2016-04-22 | 2021-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US10032918B2 (en) | 2016-04-22 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
2017
- 2017-08-24 US US15/685,040 patent/US9978879B2/en not_active Expired - Fee Related
- 2017-08-25 TW TW106129038A patent/TW201826531A/zh unknown
- 2017-08-25 CN CN201710742723.2A patent/CN107863352A/zh active Pending
- 2017-08-30 JP JP2017164943A patent/JP7019346B2/ja not_active Expired - Fee Related
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2018
- 2018-05-18 US US15/983,145 patent/US10199509B2/en not_active Expired - Fee Related
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| CN104247030A (zh) * | 2012-04-20 | 2014-12-24 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| CN103681805A (zh) * | 2012-09-14 | 2014-03-26 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
| US20160172500A1 (en) * | 2014-12-10 | 2016-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor Device and Method for Manufacturing the Same |
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| CN113491006A (zh) * | 2019-02-28 | 2021-10-08 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
| US12349403B2 (en) | 2019-02-28 | 2025-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxygen blocking films |
| WO2020187237A1 (zh) * | 2019-03-20 | 2020-09-24 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法和显示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180061989A1 (en) | 2018-03-01 |
| US20180269327A1 (en) | 2018-09-20 |
| US10199509B2 (en) | 2019-02-05 |
| TW201826531A (zh) | 2018-07-16 |
| JP7019346B2 (ja) | 2022-02-15 |
| JP2018041958A (ja) | 2018-03-15 |
| US9978879B2 (en) | 2018-05-22 |
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