JP7017420B2 - 半導体製造装置および半導体装置の成膜方法 - Google Patents
半導体製造装置および半導体装置の成膜方法 Download PDFInfo
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67373—Closed carriers characterised by locking systems
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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Description
前記基板の表面外周部に接するメインクランプと、
前記メインクランプが前記基板と接する押圧面よりも外側の領域で前記基板に接するサブクランプと、
前記サブクランプと前記ステージとを連結するバネ部材と、
を備えることを特徴とする半導体製造装置とした。
前記基板に堆積膜を形成する工程と、
前記ステージを下降させるとともに、前記サブクランプと前記ステージとを連結するバネ部材を伸長させて前記メインクランプと前記サブクランプと前記基板とを下降させる工程と、
前記メインクランプを第一係止部で下降停止させた後、前記メインクランプと前記基板とを引き離す工程と、
前記サブクランプを前記第二係止部で下降停止させた後、前記サブクランプと前記基板とを引き離す工程と、
を備える半導体装置の成膜方法を用いた。
ステージ21と離間して、ステージ21より幾分高い位置にある基板係止部28上に基板100を置き、ステージ21を第一の上昇速度U1で上昇させる。ステージ21の上面が基板100の裏面に接触したら、ステージ21上に基板100を載置した状態で上昇させる。次に、上昇速度を第一の上昇速度U1から0mm/secまで次第に減じるような第二の上昇速度U2で基板100を上昇させる。
基板100が成膜高さに達したら、基板100の上昇を止め、チャンバ11内にアルゴンガスを導入し、放電させてターゲット13に活性化したアルゴン原子を衝突させ、ターゲット13から飛び出したスパッタ粒子を基板100上に飛来させて成膜する。このとき、基板は停止した状態であり、その基板昇降速度は0mm/secである。
基板係止部28を上昇させ、基板100の裏面端部に接触させる。次いで、ステージ21を、基板搬入時と同じ最下位まで下降させバネ部材25を伸長させる。次いで、基板係止部28に保持された基板100を第一の下降速度D1で下降させ、メインクランプ23aが第一係止部31の近傍まで近づいたら、減速させて第二の下降速度D2にして第一係止部31とメインクランプ23aを接触させる。この時点で、メインクランプ23aと基板100は堆積膜101を介して固着しており、高速で降下すると、接触時の衝撃がメインクランプ23aを介して基板100に伝わることになるが、このように減速することで基板100へ伝播する衝撃を緩和できる。接触したら、さらに減速させて第三の下降速度D3にて下降させて、メインクランプ23aと基板100を引き離す。これは引き離す際に、基板100表面の堆積膜101の端部が剥がれたり、捲れ上がったりすることを抑制するためである。堆積膜101が高融点金属膜であると、内部応力が高く堆積膜101の端部のダメージが起点となって膜剥がれとなることがある。この減速はそのような問題を回避するために有効な方策である。
メインクランプ23aと基板100が離れたら、下降速度を上げて第四の下降速度D4にし、基板100とサブクランプ23bが接した状態で下降させ、第二係止部32にサブクランプに接触すると、サブクランプ23bが基板100と離れて下降動作を停止する。
基板係止部28に保持された基板100のみを第四の速度で下降させ、サブクランプ23bと基板100との間に間隙を設けて基板100の下降を停止させる。このとき、基板100と下方のステージ21との間にも間隙を設けて互いに離間した状態である。次いで、堆積膜101を形成した基板100を搬送装置を用いて搬出するが、基板100の上下の間隙は搬送装置の搬送アームおよび基板100の可動領域として必要となる。
11 チャンバ
13 ターゲット
20 基板ホルダー
21 ステージ
22 クランプ
23a メインクランプ
23b サブクランプ
24 バネ接続部
25 バネ部材
26 ステージ昇降機構
27 基板係止部昇降機構
28 基板係止部
30 防着板
31 第一係止部
32 第二係止部
100 基板
101 堆積膜
U1 第一の上昇速度
U2 第二の上昇速度
D1 第一の下降速度
D2 第二の下降速度
D3 第三の下降速度
D4 第四の下降速度
Claims (5)
- 基板を裏面から支持するステージと、
前記基板の表面外周部に接するメインクランプと、
前記メインクランプが前記基板と接する押圧面よりも外側の領域で前記基板に接するサブクランプと、
前記サブクランプと前記ステージとを連結する引張りコイルバネと、
を備えることを特徴とする半導体製造装置。 - 前記メインクランプの下には、第一係止部が設けられ、
前記サブクランプの下には、前記第一係止部よりも低い第二係止部が設けられ、
前記基板の下には、基板係止部が設けられることを特徴とする請求項1記載の半導体製造装置。 - 基板を裏面から支持するステージと、前記基板の表面外周部に接するメインクランプおよび前記メインクランプが前記基板と接する押圧面よりも外側の領域で前記基板に接するサブクランプと、で前記基板を挟持する工程と、
前記基板に堆積膜を形成する工程と、
前記ステージを下降させるとともに、前記サブクランプと前記ステージとを連結するバネ部材を伸長させて前記メインクランプと前記サブクランプと前記基板とを下降させる工程と、
前記メインクランプを第一係止部で下降停止させた後、前記メインクランプと前記基板とを引き離す工程と、
前記サブクランプを第二係止部で下降停止させた後、前記サブクランプと前記基板とを引き離す工程と、
を備える半導体装置の成膜方法。 - 前記メインクランプと前記サブクランプと前記基板を下降させる工程の前に、前記基板を基板係止部で支持することを特徴とする請求項3記載の半導体装置の成膜方法。
- 前記メインクランプと前記サブクランプと前記基板とを下降させる工程の加工速度に比べ、前記メインクランプと前記基板とを引き離す工程の下降速度を減じることを特徴とする請求項4記載の半導体装置の成膜方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2018010248A JP7017420B2 (ja) | 2018-01-25 | 2018-01-25 | 半導体製造装置および半導体装置の成膜方法 |
TW107142575A TW201940725A (zh) | 2018-01-25 | 2018-11-29 | 半導體製造裝置以及半導體裝置的成膜方法 |
US16/225,849 US20190229006A1 (en) | 2018-01-25 | 2018-12-19 | Semiconductor manufacturing apparatus and film formation method for a semiconductor device |
KR1020180164835A KR20190090690A (ko) | 2018-01-25 | 2018-12-19 | 반도체 제조 장치 및 반도체 장치의 성막 방법 |
CN201811575206.1A CN110079771A (zh) | 2018-01-25 | 2018-12-21 | 半导体制造装置和半导体装置的成膜方法 |
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JP2018010248A JP7017420B2 (ja) | 2018-01-25 | 2018-01-25 | 半導体製造装置および半導体装置の成膜方法 |
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JP2019129241A JP2019129241A (ja) | 2019-08-01 |
JP7017420B2 true JP7017420B2 (ja) | 2022-02-08 |
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US (1) | US20190229006A1 (ja) |
JP (1) | JP7017420B2 (ja) |
KR (1) | KR20190090690A (ja) |
CN (1) | CN110079771A (ja) |
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US10867827B2 (en) * | 2018-09-27 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Alignment holder, testing apparatus and method for manufacturing a semiconductor package |
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JP2005077845A (ja) | 2003-09-01 | 2005-03-24 | Hoya Corp | スパッタリング装置、薄膜付き基板の製造方法、マスクブランクスの製造方法及び転写マスクの製造方法 |
JP2007294812A (ja) | 2006-04-27 | 2007-11-08 | Fujikura Ltd | 冷却装置およびプラズマ処理装置 |
JP2011214034A (ja) | 2010-03-31 | 2011-10-27 | Seiko Epson Corp | スパッタ装置 |
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JP2005333063A (ja) | 2004-05-21 | 2005-12-02 | Renesas Technology Corp | クランプ部材、成膜装置、成膜方法、半導体装置の製造方法 |
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- 2018-11-29 TW TW107142575A patent/TW201940725A/zh unknown
- 2018-12-19 KR KR1020180164835A patent/KR20190090690A/ko unknown
- 2018-12-19 US US16/225,849 patent/US20190229006A1/en not_active Abandoned
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JP2005077845A (ja) | 2003-09-01 | 2005-03-24 | Hoya Corp | スパッタリング装置、薄膜付き基板の製造方法、マスクブランクスの製造方法及び転写マスクの製造方法 |
JP2007294812A (ja) | 2006-04-27 | 2007-11-08 | Fujikura Ltd | 冷却装置およびプラズマ処理装置 |
JP2011214034A (ja) | 2010-03-31 | 2011-10-27 | Seiko Epson Corp | スパッタ装置 |
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CN110079771A (zh) | 2019-08-02 |
KR20190090690A (ko) | 2019-08-02 |
TW201940725A (zh) | 2019-10-16 |
JP2019129241A (ja) | 2019-08-01 |
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