JP6997711B2 - プリカーサ化合物の再利用を伴うdli-mocvdによる皮膜の成膜方法 - Google Patents

プリカーサ化合物の再利用を伴うdli-mocvdによる皮膜の成膜方法 Download PDF

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JP6997711B2
JP6997711B2 JP2018531355A JP2018531355A JP6997711B2 JP 6997711 B2 JP6997711 B2 JP 6997711B2 JP 2018531355 A JP2018531355 A JP 2018531355A JP 2018531355 A JP2018531355 A JP 2018531355A JP 6997711 B2 JP6997711 B2 JP 6997711B2
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transition metal
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JP2019502023A5 (enExample
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シュスタ,フレデリック
ムーリー,フランシス
ミショ,アレキサンドラ
ポン,ミッシェル
ブワショ,ラファエル
ロメロ,フェルナンド
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D5/00Condensation of vapours; Recovering volatile solvents by condensation
    • B01D5/0057Condensation of vapours; Recovering volatile solvents by condensation in combination with other processes
    • B01D5/006Condensation of vapours; Recovering volatile solvents by condensation in combination with other processes with evaporation or distillation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D8/00Cold traps; Cold baffles
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32Carbides
    • CCHEMISTRY; METALLURGY
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018531355A 2015-12-18 2016-12-17 プリカーサ化合物の再利用を伴うdli-mocvdによる皮膜の成膜方法 Active JP6997711B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1562862 2015-12-18
FR1562862A FR3045673B1 (fr) 2015-12-18 2015-12-18 Procede de depot d'un revetement par dli-mocvd avec recyclage du compose precurseur
PCT/FR2016/053541 WO2017103546A1 (fr) 2015-12-18 2016-12-17 Procede de depot d'un revetement par dli-mocvd avec recyclage direct du compose precurseur

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JP2019502023A JP2019502023A (ja) 2019-01-24
JP2019502023A5 JP2019502023A5 (enExample) 2020-03-19
JP6997711B2 true JP6997711B2 (ja) 2022-02-04

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US (2) US20190003048A1 (enExample)
EP (1) EP3390686B1 (enExample)
JP (1) JP6997711B2 (enExample)
KR (1) KR20180089515A (enExample)
FR (1) FR3045673B1 (enExample)
RU (1) RU2699126C1 (enExample)
WO (1) WO2017103546A1 (enExample)

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ES2827830T3 (es) 2016-09-28 2021-05-24 Commissariat Energie Atomique Componente nuclear con sustrato metálico, procedimiento de fabricación mediante DLI-MOCVD y usos contra la oxidación/hidruración
US11715572B2 (en) 2016-09-28 2023-08-01 Commissariat A L'energie Atomique Et Aux Energies Alternatives Composite nuclear component, DLI-MOCVD method for producing same, and uses for controlling oxidation/hydridation
WO2018060642A1 (fr) 2016-09-28 2018-04-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Composant nucléaire avec revetement de crc amorphe, procédé de fabrication par dli-mocvd et utilisations contre l'oxydation/hydruration
EP3520118B1 (fr) 2016-09-28 2020-08-05 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Composant nucléaire avec revetement de cr metastable, procédé de fabrication par dli-mocvd et utilisations contre l'oxydation/hydruration
US11560625B2 (en) * 2018-01-19 2023-01-24 Entegris, Inc. Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor
JP2021536528A (ja) * 2018-09-03 2021-12-27 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 薄膜堆積のための直接液体注入システム
FR3114588B1 (fr) * 2020-09-29 2023-08-11 Safran Ceram Procédé de fabrication d’une barrière environnementale

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010037631A (ja) 2008-08-07 2010-02-18 Tokyo Electron Ltd 原料回収方法、トラップ機構、排気系及びこれを用いた成膜装置
JP2014154792A (ja) 2013-02-13 2014-08-25 Japan Pionics Co Ltd アンモニア及び水素の回収方法及び再利用方法
JP2015151564A (ja) 2014-02-13 2015-08-24 東洋製罐グループホールディングス株式会社 原子層堆積成膜装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1453950A1 (ru) * 1987-01-07 1994-06-30 А.И. Костылев Парогазовая смесь для пиролитического нанесения защитных покрытий на основе хрома
FR2643071B1 (fr) * 1989-02-16 1993-05-07 Unirec Procede de depot en phase vapeur a basse temperature d'un revetement ceramique du type nitrure ou carbonitrure metallique
SU1759958A1 (ru) * 1990-04-19 1992-09-07 Дзержинский филиал Ленинградского научно-исследовательского и конструкторского института химического машиностроения Способ нанесени пиролитического карбидохромового покрыти на металлические поверхности
JPH0412525A (ja) * 1990-05-02 1992-01-17 Babcock Hitachi Kk 有機金属化学気相成長装置
WO2005028704A1 (en) * 2003-09-19 2005-03-31 Akzo Nobel N.V. Metallization of substrate (s) by a liquid/vapor deposition process
KR101388817B1 (ko) * 2006-03-14 2014-04-23 프랙스에어 테크놀로지, 인코포레이티드 증착 방법을 위한 온도 제어 콜드 트랩 및 그의 용도
FR2904007B1 (fr) 2006-07-21 2008-11-21 Toulouse Inst Nat Polytech Procede de depot de revetements ceramiques non oxydes.
FR2904006B1 (fr) * 2006-07-21 2008-10-31 Toulouse Inst Nat Polytech Procede de depot de revetements metalliques durs
RU2513496C2 (ru) * 2012-05-31 2014-04-20 Федеральное государственное унитарное предприятие "Научно-производственное объединение "Радиевый институт имени В.Г. Хлопина" Износостойкое металлическое покрытие на основе хрома и способ его нанесения
WO2014074589A1 (en) * 2012-11-06 2014-05-15 Applied Materials, Inc. Apparatus for spatial atomic layer deposition with recirculation and methods of use

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010037631A (ja) 2008-08-07 2010-02-18 Tokyo Electron Ltd 原料回収方法、トラップ機構、排気系及びこれを用いた成膜装置
JP2014154792A (ja) 2013-02-13 2014-08-25 Japan Pionics Co Ltd アンモニア及び水素の回収方法及び再利用方法
JP2015151564A (ja) 2014-02-13 2015-08-24 東洋製罐グループホールディングス株式会社 原子層堆積成膜装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
G.Boisselier, et al,Growth of Chromium Carbide in a Hot Wall DLICVD Reactor,Journal of Nanoscince and Nanotechnology,2011年04月28日,Vo.11,pp.8289-8293

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US20190003048A1 (en) 2019-01-03
EP3390686A1 (fr) 2018-10-24
FR3045673A1 (fr) 2017-06-23
KR20180089515A (ko) 2018-08-08
WO2017103546A1 (fr) 2017-06-22
RU2699126C1 (ru) 2019-09-03
US20200123655A1 (en) 2020-04-23
EP3390686B1 (fr) 2019-11-20
JP2019502023A (ja) 2019-01-24
FR3045673B1 (fr) 2020-02-28
US11142822B2 (en) 2021-10-12

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