JP2021536528A - 薄膜堆積のための直接液体注入システム - Google Patents
薄膜堆積のための直接液体注入システム Download PDFInfo
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- JP2021536528A JP2021536528A JP2021511657A JP2021511657A JP2021536528A JP 2021536528 A JP2021536528 A JP 2021536528A JP 2021511657 A JP2021511657 A JP 2021511657A JP 2021511657 A JP2021511657 A JP 2021511657A JP 2021536528 A JP2021536528 A JP 2021536528A
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- liquid
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/52—Controlling or regulating the coating process
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- H01M4/0402—Methods of deposition of the material
- H01M4/0421—Methods of deposition of the material involving vapour deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
オプションの堆積後処理には、堆積したセラミック含有層を圧縮する堆積後プラズマ処理が含まれることがあり、付加的な「機能化」プロセス、例えば、Al2O3を形成するAlOxの完全な酸化、又は膜の穿刺抵抗性を高めるポリマー材料の堆積が実行され得る。
Claims (15)
- 装置であって、
液体反応物を気化し、気化した反応物を処理チャンバへ流すよう動作可能な気化器アセンブリであって、
液体反応物を受け取り、液体反応物を気化し、及び気化した液体反応物を供給するよう動作可能な注入バルブであって、
中に内部領域を包含するバルブ本体;
内部領域と流体連結した気体入口ポート;
内部領域と流体連結した液体入口ポート;及び
内部領域と流体連結した蒸気出口ポート;
を含む注入バルブと、
第1の入口ラインであって、
液体入口ポートと流体的に結合した第1の端部;及び
液体源と結合する第2の端部;
を含む第1の入口ラインと、
第2の入口ラインであって、
気体入口ポートと流体的に結合した第1の端部;
キャリアガス源と流体的に結合した第2の端部;及び
第1の端部と第2の端部との間に配置されたヒータ;
を含む第2の入口ラインと、
を含む気化器アセンブリ
を含む、装置。 - 装置であって、
液体反応物を供給するよう動作可能なアンプルアセンブリであって、
内部空間を包含する、側壁、頂面、及び底面を含むキャニスタ;及び
内部空間と流体連結した入口ポート及び出口ポート;
を含むアンプルアセンブリと、
第3の入口ラインであって、
アンプルアセンブリの入口ポートと流体的に結合した第1の端部;及び
プッシュガス源と接続される第2の端部;
を含む第3の入口ラインと、
第1の出口ラインであって、
アンプルアセンブリの出口ポートと流体的に結合した第1の端部;及び
第1の入口ラインの第2の端部と流体的に結合した第2の端部
を含む第1の出口ラインと、
をさらに含む、請求項1に記載の装置。 - プッシュガス源が、ヘリウム、窒素、アルゴン、又はそれらの組み合わせから選択されるガスを含む、請求項2に記載の装置。
- 注入バルブへ流される液体反応物の流量を測定するよう動作可能な第1の入口ラインの第1の端部と第2の端部との間に配置された液体流量計をさらに含む、請求項1に記載の装置。
- 液体反応物が、シラン含有前駆体、テトラエチルオルトシリケート(TEOS)、又は水から選択される、請求項1に記載の装置。
- キャリアガス源が、ヘリウム、窒素又はアルゴンから選択されるガスを含む、請求項1に記載の装置。
- システムであって、
処理チャンバ;並びに
気化した前駆体を処理チャンバへ供給するよう動作可能な直接液体注入システムであって、
液体反応物を気化し、気化した反応物を処理チャンバへ流すよう動作可能な気化器アセンブリであって、
液体反応物を受け取り、液体反応物を気化し、及び気化した液体反応物を供給するよう動作可能な注入バルブであって、
中に内部領域を包含するバルブ本体;
内部領域と流体連結した気体入口ポート;
内部領域と流体連結した液体入口ポート;及び
内部領域と流体連結した蒸気出口ポート;
を含む注入バルブと、
第1の入口ラインであって、
液体入口ポートと流体的に結合した第1の端部;及び
液体源と結合する第2の端部;
を含む第1の入口ラインと、
第2の入口ラインであって、
気体入口ポートと流体的に結合した第1の端部;
キャリアガス源と流体的に結合した第2の端部;及び
第1の端部と第2の端部との間に配置されたヒータ;
を含む第2の入口ラインと、
を含む気化器アセンブリ
を含む直接液体注入システム
を含む、システム。 - 直接液体注入システムが、
液体反応物を供給するよう動作可能なアンプルアセンブリであって、
中に内部空間を包含する、側壁、頂面、及び底面を含むキャニスタ;及び
内部空間と流体連結した入口ポート及び出口ポート;
を含むアンプルアセンブリと、
第3の入口ラインであって、
アンプルアセンブリの入口ポートと流体的に結合した第1の端部;及び
プッシュガス源と接続される第2の端部;
を含む第3の入口ラインと、
第1の出口ラインであって、
アンプルアセンブリの出口ポートと流体的に結合した第1の端部;及び
第1の入口ラインの第2の端部と流体的に結合した第2の端部
を含む第1の出口ラインと、
をさらに含む、請求項7に記載のシステム。 - プッシュガス源が、ヘリウム、窒素、アルゴン、又はそれらの組み合わせから選択されるガスを含む、請求項7に記載のシステム。
- 注入バルブへ流される液体反応物の流量を測定するよう動作可能な第1の入口ラインの第1の端部と第2の端部との間に配置された液体流量計をさらに含む、請求項7に記載のシステム。
- 液体反応物が、シラン含有前駆体、テトラエチルオルトシリケート(TEOS)、又は水から選択される、請求項7に記載のシステム。
- キャリアガス源が、ヘリウム、窒素又はアルゴンから選択されるガスを含む、請求項7に記載のシステム。
- 処理チャンバが一又は複数の蒸発るつぼを含む、請求項7に記載のシステム。
- 方法であって、
プッシュガス源からのプッシュガスを、液体前駆体を含有するアンプルアセンブリへ供給して、液体前駆体を加圧すること;
加圧した液体前駆体を気化器へ供給すること;
気化器中の液体前駆体を気化して、気化した反応物を形成すること;
気化した反応物を処理チャンバ中の処理領域へ供給すること;及び
気化した反応物を蒸発した前駆体及び/又はプラズマと反応させて、処理領域中に配置された基板上にセラミック含有層を堆積させること;
を含む、方法。 - 蒸発した前駆体が、アルミニウム含有前駆体及びシリコン含有前駆体から選択される、請求項14に記載の方法。
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- 2019-08-20 US US16/546,170 patent/US11180849B2/en active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09186107A (ja) * | 1995-12-27 | 1997-07-15 | Tokyo Electron Ltd | 処理ガス供給装置のクリーニング方法 |
WO2013100073A1 (ja) * | 2011-12-28 | 2013-07-04 | 大日本印刷株式会社 | プラズマを使った前処理装置を有した蒸着装置 |
JP2014189890A (ja) * | 2013-03-28 | 2014-10-06 | Kobe Steel Ltd | 成膜装置及び成膜方法 |
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KR20240060875A (ko) | 2024-05-08 |
JP2023123527A (ja) | 2023-09-05 |
CN112703271A (zh) | 2021-04-23 |
US11180849B2 (en) | 2021-11-23 |
EP3847294A1 (en) | 2021-07-14 |
EP3847294A4 (en) | 2022-06-01 |
WO2020050974A1 (en) | 2020-03-12 |
KR20210041104A (ko) | 2021-04-14 |
US20200071820A1 (en) | 2020-03-05 |
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