JP6994806B2 - 両面露光装置及び両面露光方法 - Google Patents

両面露光装置及び両面露光方法 Download PDF

Info

Publication number
JP6994806B2
JP6994806B2 JP2017210654A JP2017210654A JP6994806B2 JP 6994806 B2 JP6994806 B2 JP 6994806B2 JP 2017210654 A JP2017210654 A JP 2017210654A JP 2017210654 A JP2017210654 A JP 2017210654A JP 6994806 B2 JP6994806 B2 JP 6994806B2
Authority
JP
Japan
Prior art keywords
mask
mark
alignment
substrate
masks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017210654A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019082612A (ja
JP2019082612A5 (zh
Inventor
淳 名古屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adtec Engineering Co Ltd
Original Assignee
Adtec Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adtec Engineering Co Ltd filed Critical Adtec Engineering Co Ltd
Priority to JP2017210654A priority Critical patent/JP6994806B2/ja
Priority to TW107138121A priority patent/TWI772549B/zh
Priority to KR1020180130946A priority patent/KR102622294B1/ko
Priority to CN201811284543.5A priority patent/CN109725502B/zh
Priority to CN202410091928.9A priority patent/CN117806134A/zh
Publication of JP2019082612A publication Critical patent/JP2019082612A/ja
Publication of JP2019082612A5 publication Critical patent/JP2019082612A5/ja
Priority to JP2021201932A priority patent/JP7121184B2/ja
Application granted granted Critical
Publication of JP6994806B2 publication Critical patent/JP6994806B2/ja
Priority to KR1020240000262A priority patent/KR20240005244A/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032—Simultaneous exposure of the front side and the backside
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Indication In Cameras, And Counting Of Exposures (AREA)
  • Separation By Low-Temperature Treatments (AREA)
JP2017210654A 2017-10-31 2017-10-31 両面露光装置及び両面露光方法 Active JP6994806B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2017210654A JP6994806B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法
TW107138121A TWI772549B (zh) 2017-10-31 2018-10-29 兩面曝光裝置及兩面曝光方法
KR1020180130946A KR102622294B1 (ko) 2017-10-31 2018-10-30 양면 노광 장치 및 양면 노광 방법
CN202410091928.9A CN117806134A (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法
CN201811284543.5A CN109725502B (zh) 2017-10-31 2018-10-31 两面曝光装置及两面曝光方法
JP2021201932A JP7121184B2 (ja) 2017-10-31 2021-12-13 両面露光装置及び両面露光方法
KR1020240000262A KR20240005244A (ko) 2017-10-31 2024-01-02 양면 노광 장치 및 양면 노광 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017210654A JP6994806B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021201932A Division JP7121184B2 (ja) 2017-10-31 2021-12-13 両面露光装置及び両面露光方法

Publications (3)

Publication Number Publication Date
JP2019082612A JP2019082612A (ja) 2019-05-30
JP2019082612A5 JP2019082612A5 (zh) 2020-09-17
JP6994806B2 true JP6994806B2 (ja) 2022-01-14

Family

ID=66295507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017210654A Active JP6994806B2 (ja) 2017-10-31 2017-10-31 両面露光装置及び両面露光方法

Country Status (4)

Country Link
JP (1) JP6994806B2 (zh)
KR (2) KR102622294B1 (zh)
CN (2) CN109725502B (zh)
TW (1) TWI772549B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114518695A (zh) * 2020-11-20 2022-05-20 苏州源卓光电科技有限公司 一种双面曝光系统的校正方法和曝光方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000099158A (ja) 1998-09-18 2000-04-07 Orc Mfg Co Ltd ワークとマスクの整合機構および整合方法
JP2007121425A (ja) 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP5997409B1 (ja) 2016-05-26 2016-09-28 株式会社 ベアック 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法
JP2019082610A (ja) 2017-10-31 2019-05-30 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
JP2019082611A5 (zh) 2017-10-31 2020-09-17

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2600027B2 (ja) * 1991-05-16 1997-04-16 日立テクノエンジニアリング株式会社 画像位置合わせ方法およびその装置
JPH08160542A (ja) * 1994-12-02 1996-06-21 Nippon Seiko Kk 露光装置
JP2000155430A (ja) 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
JP2005121959A (ja) * 2003-10-17 2005-05-12 Pentax Corp 両面露光装置
JP2006278648A (ja) 2005-03-29 2006-10-12 Nsk Ltd 両面露光方法
JP5333063B2 (ja) * 2009-08-28 2013-11-06 ウシオ電機株式会社 両面露光装置
JP2012089723A (ja) * 2010-10-21 2012-05-10 Ushio Inc コンタクト露光方法および装置
JP6200224B2 (ja) * 2012-09-13 2017-09-20 日本メクトロン株式会社 フォトマスク、フォトマスク組、露光装置および露光方法
TWI553423B (zh) * 2014-11-11 2016-10-11 Beac Co Ltd Exposure device
JP7412872B2 (ja) 2017-10-31 2024-01-15 株式会社アドテックエンジニアリング 両面露光装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000099158A (ja) 1998-09-18 2000-04-07 Orc Mfg Co Ltd ワークとマスクの整合機構および整合方法
JP2007121425A (ja) 2005-10-25 2007-05-17 San Ei Giken Inc 露光方法及び露光装置
JP5997409B1 (ja) 2016-05-26 2016-09-28 株式会社 ベアック 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法
JP2019082610A (ja) 2017-10-31 2019-05-30 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
JP2019082611A5 (zh) 2017-10-31 2020-09-17

Also Published As

Publication number Publication date
JP2019082612A (ja) 2019-05-30
TWI772549B (zh) 2022-08-01
CN109725502A (zh) 2019-05-07
CN109725502B (zh) 2024-02-06
CN117806134A (zh) 2024-04-02
TW201933432A (zh) 2019-08-16
KR20240005244A (ko) 2024-01-11
KR20190049563A (ko) 2019-05-09
KR102622294B1 (ko) 2024-01-08

Similar Documents

Publication Publication Date Title
JP7389885B2 (ja) 両面露光装置及び両面露光方法
JP7430768B2 (ja) 両面露光装置
JP4777682B2 (ja) スキャン露光装置
JP2007310209A (ja) 露光装置
TWI481971B (zh) 曝光方法及曝光裝置
KR20240005244A (ko) 양면 노광 장치 및 양면 노광 방법
JP7121184B2 (ja) 両面露光装置及び両面露光方法
TWI693478B (zh) 無罩曝光裝置及曝光方法
JP7364754B2 (ja) 露光方法
KR102671167B1 (ko) 양면 노광 장치 및 양면 노광 방법
JP7234426B2 (ja) マスク対及び両面露光装置
JP2008286925A (ja) 露光用マスクの初期位置及び姿勢調整方法
KR20240078646A (ko) 양면 노광 장치 및 양면 노광 방법
JPH0643662A (ja) 電子回路用基板に対する露光方法と、その装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200731

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200803

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210520

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210601

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210727

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20211130

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20211213

R150 Certificate of patent or registration of utility model

Ref document number: 6994806

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150