JP6994037B2 - ＳｉＨ非含有ビニルジシラン - Google Patents

ＳｉＨ非含有ビニルジシラン Download PDF

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Publication number
JP6994037B2
JP6994037B2 JP2019535225A JP2019535225A JP6994037B2 JP 6994037 B2 JP6994037 B2 JP 6994037B2 JP 2019535225 A JP2019535225 A JP 2019535225A JP 2019535225 A JP2019535225 A JP 2019535225A JP 6994037 B2 JP6994037 B2 JP 6994037B2
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JP
Japan
Prior art keywords
silicon
bonded
sih
vinyl
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2019535225A
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English (en)
Japanese (ja)
Other versions
JP2019529542A (ja
JP2019529542A5 (enExample
Inventor
ブライアン・ディー・レッケン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Dow Silicones Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp, Dow Silicones Corp filed Critical Dow Corning Corp
Publication of JP2019529542A publication Critical patent/JP2019529542A/ja
Publication of JP2019529542A5 publication Critical patent/JP2019529542A5/ja
Application granted granted Critical
Publication of JP6994037B2 publication Critical patent/JP6994037B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
    • C01B21/088—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms containing also one or more halogen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2019535225A 2016-09-22 2017-09-15 ＳｉＨ非含有ビニルジシラン Expired - Fee Related JP6994037B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662398174P 2016-09-22 2016-09-22
US62/398,174 2016-09-22
PCT/US2017/051710 WO2018057411A1 (en) 2016-09-22 2017-09-15 SiH-FREE VINYLDISILANES

Publications (3)

Publication Number Publication Date
JP2019529542A JP2019529542A (ja) 2019-10-17
JP2019529542A5 JP2019529542A5 (enExample) 2020-09-24
JP6994037B2 true JP6994037B2 (ja) 2022-01-14

Family

ID=60138914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019535225A Expired - Fee Related JP6994037B2 (ja) 2016-09-22 2017-09-15 ＳｉＨ非含有ビニルジシラン

Country Status (7)

Country Link
US (1) US11485642B2 (enExample)
EP (1) EP3515864B1 (enExample)
JP (1) JP6994037B2 (enExample)
KR (1) KR102228807B1 (enExample)
CN (1) CN109689569B (enExample)
TW (1) TWI749067B (enExample)
WO (1) WO2018057411A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114940687A (zh) * 2022-05-30 2022-08-26 杭州瀛拓科技有限公司 一种多取代乙烯基硅（氧）烷的连续流合成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007191797A (ja) 2007-03-16 2007-08-02 Semiconductor Energy Lab Co Ltd 被膜形成装置及び被膜形成方法
JP2009021567A (ja) 2007-06-15 2009-01-29 Semiconductor Energy Lab Co Ltd 半導体装置製造用基板及びその作製方法
JP2009532395A (ja) 2006-04-03 2009-09-10 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ペンタキス（ジメチルアミノ）ジシラン前駆体含有化合物及びその調製方法
WO2013035558A1 (ja) 2011-09-05 2013-03-14 東ソー株式会社 成膜材料、それを用いた封止膜、及びその用途
WO2015184214A1 (en) 2014-05-30 2015-12-03 Dow Corning Corporation Process of synthesizing diisopropylaminw-disilanes

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60151278A (ja) * 1984-01-13 1985-08-09 信越化学工業株式会社 窒化けい素の製造方法
JPS61207391A (ja) * 1985-03-09 1986-09-13 Shin Etsu Chem Co Ltd トリシリルエタン誘導体化合物の製法
JPS61207389A (ja) 1985-03-09 1986-09-13 Shin Etsu Chem Co Ltd 新規ジシラシクロペンタン化合物の製法
JPS61207390A (ja) * 1985-03-09 1986-09-13 Shin Etsu Chem Co Ltd ２−ビニルテトラアルキルジシラニル基含有化合物の再分配反応を起す方法
JPH02145590A (ja) * 1988-11-26 1990-06-05 Shin Etsu Chem Co Ltd 新規ジシラシクロヘキサン化合物及びその製造方法
US5310583A (en) 1992-11-02 1994-05-10 Dow Corning Corporation Vapor phase deposition of hydrogen silsesquioxane resin in the presence of nitrous oxide
JP2907061B2 (ja) * 1995-04-05 1999-06-21 信越化学工業株式会社 有機けい素化合物の製造方法
US5606088A (en) * 1996-03-28 1997-02-25 Dow Corning Corporation Process for preparation of organodisilanes
CN101602918A (zh) 2009-07-23 2009-12-16 河海大学 水工结构物脱空填充硅酮胶及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009532395A (ja) 2006-04-03 2009-09-10 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ペンタキス（ジメチルアミノ）ジシラン前駆体含有化合物及びその調製方法
JP2007191797A (ja) 2007-03-16 2007-08-02 Semiconductor Energy Lab Co Ltd 被膜形成装置及び被膜形成方法
JP2009021567A (ja) 2007-06-15 2009-01-29 Semiconductor Energy Lab Co Ltd 半導体装置製造用基板及びその作製方法
WO2013035558A1 (ja) 2011-09-05 2013-03-14 東ソー株式会社 成膜材料、それを用いた封止膜、及びその用途
WO2015184214A1 (en) 2014-05-30 2015-12-03 Dow Corning Corporation Process of synthesizing diisopropylaminw-disilanes

Also Published As

Publication number Publication date
KR102228807B1 (ko) 2021-03-16
EP3515864B1 (en) 2021-10-20
US20190284055A1 (en) 2019-09-19
KR20190049777A (ko) 2019-05-09
TW201829305A (zh) 2018-08-16
CN109689569B (zh) 2022-05-27
JP2019529542A (ja) 2019-10-17
CN109689569A (zh) 2019-04-26
TWI749067B (zh) 2021-12-11
US11485642B2 (en) 2022-11-01
WO2018057411A1 (en) 2018-03-29
EP3515864A1 (en) 2019-07-31

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