JP6986425B2 - 不純物拡散剤組成物、及び半導体基板の製造方法 - Google Patents

不純物拡散剤組成物、及び半導体基板の製造方法 Download PDF

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JP6986425B2
JP6986425B2 JP2017228267A JP2017228267A JP6986425B2 JP 6986425 B2 JP6986425 B2 JP 6986425B2 JP 2017228267 A JP2017228267 A JP 2017228267A JP 2017228267 A JP2017228267 A JP 2017228267A JP 6986425 B2 JP6986425 B2 JP 6986425B2
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group
carbon atoms
semiconductor substrate
groups
nitrogen
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Japanese (ja)
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JP2018107434A (ja
Inventor
佳宏 澤田
優 高橋
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Priority to TW106142849A priority Critical patent/TWI759371B/zh
Priority to US15/845,015 priority patent/US10504732B2/en
Priority to KR1020170176499A priority patent/KR102445988B1/ko
Publication of JP2018107434A publication Critical patent/JP2018107434A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/02—Boron compounds
    • C07F5/022—Boron compounds without C-boron linkages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2017228267A 2016-12-22 2017-11-28 不純物拡散剤組成物、及び半導体基板の製造方法 Active JP6986425B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW106142849A TWI759371B (zh) 2016-12-22 2017-12-07 雜質擴散劑組成物以及半導體基板之製造方法
US15/845,015 US10504732B2 (en) 2016-12-22 2017-12-18 Impurity diffusion agent composition and method for manufacturing semiconductor substrate
KR1020170176499A KR102445988B1 (ko) 2016-12-22 2017-12-20 불순물 확산제 조성물, 및 반도체 기판의 제조 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016249961 2016-12-22
JP2016249961 2016-12-22

Publications (2)

Publication Number Publication Date
JP2018107434A JP2018107434A (ja) 2018-07-05
JP6986425B2 true JP6986425B2 (ja) 2021-12-22

Family

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JP2017228267A Active JP6986425B2 (ja) 2016-12-22 2017-11-28 不純物拡散剤組成物、及び半導体基板の製造方法

Country Status (3)

Country Link
JP (1) JP6986425B2 (zh)
KR (1) KR102445988B1 (zh)
TW (1) TWI759371B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7428478B2 (ja) * 2019-05-24 2024-02-06 東京応化工業株式会社 拡散剤組成物、及び半導体基板の製造方法
KR20210133328A (ko) * 2020-04-27 2021-11-08 고려대학교 산학협력단 금속 산화물 박막의 캐리어 도핑 방법 및 이에 의해 제조된 반도체층을 포함하는 전자 소자

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3375253D1 (de) * 1982-09-23 1988-02-11 Allied Corp Polymeric boron-nitrogen dopant
JPH06318559A (ja) 1993-05-07 1994-11-15 Hitachi Ltd 高エネルギーイオン注入による半導体装置の製造方法
FR2923221B1 (fr) * 2007-11-07 2012-06-01 Air Liquide Procede de depot par cvd ou pvd de composes de bore
US8518170B2 (en) * 2008-12-29 2013-08-27 Honeywell International Inc. Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks
CN104756233A (zh) 2012-10-22 2015-07-01 夏普株式会社 半导体器件的制造方法
MY179365A (en) * 2015-02-25 2020-11-05 Toray Industries P-type impurity-diffusing composition, method for manufacturing semiconductor device using said composition, solar cell, and method for manufacturing said solar cell
US10763103B2 (en) * 2015-03-31 2020-09-01 Versum Materials Us, Llc Boron-containing compounds, compositions, and methods for the deposition of a boron containing films
JP6616712B2 (ja) * 2015-04-03 2019-12-04 東京応化工業株式会社 半導体基板の製造方法

Also Published As

Publication number Publication date
TW201840573A (zh) 2018-11-16
KR102445988B1 (ko) 2022-09-21
JP2018107434A (ja) 2018-07-05
TWI759371B (zh) 2022-04-01
KR20180073490A (ko) 2018-07-02

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