JP6980567B2 - 検出装置 - Google Patents

検出装置 Download PDF

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Publication number
JP6980567B2
JP6980567B2 JP2018040560A JP2018040560A JP6980567B2 JP 6980567 B2 JP6980567 B2 JP 6980567B2 JP 2018040560 A JP2018040560 A JP 2018040560A JP 2018040560 A JP2018040560 A JP 2018040560A JP 6980567 B2 JP6980567 B2 JP 6980567B2
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JP
Japan
Prior art keywords
signal
detection
circuit
switching element
electrode
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Application number
JP2018040560A
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English (en)
Japanese (ja)
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JP2019160826A (ja
JP2019160826A5 (enExample
Inventor
仁 田中
正浩 多田
卓 中村
比呂志 水橋
詞貴 後藤
博文 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
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Japan Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2018040560A priority Critical patent/JP6980567B2/ja
Priority to DE112019000712.2T priority patent/DE112019000712T5/de
Priority to PCT/JP2019/004113 priority patent/WO2019171861A1/ja
Priority to CN201980016555.6A priority patent/CN111801934B/zh
Publication of JP2019160826A publication Critical patent/JP2019160826A/ja
Priority to US17/010,413 priority patent/US11719573B2/en
Publication of JP2019160826A5 publication Critical patent/JP2019160826A5/ja
Priority to JP2021186223A priority patent/JP7269308B2/ja
Application granted granted Critical
Publication of JP6980567B2 publication Critical patent/JP6980567B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
JP2018040560A 2018-03-07 2018-03-07 検出装置 Active JP6980567B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018040560A JP6980567B2 (ja) 2018-03-07 2018-03-07 検出装置
DE112019000712.2T DE112019000712T5 (de) 2018-03-07 2019-02-05 Erfassungsvorrichtung
PCT/JP2019/004113 WO2019171861A1 (ja) 2018-03-07 2019-02-05 検出装置
CN201980016555.6A CN111801934B (zh) 2018-03-07 2019-02-05 检测装置
US17/010,413 US11719573B2 (en) 2018-03-07 2020-09-02 Detection device
JP2021186223A JP7269308B2 (ja) 2018-03-07 2021-11-16 検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018040560A JP6980567B2 (ja) 2018-03-07 2018-03-07 検出装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021186223A Division JP7269308B2 (ja) 2018-03-07 2021-11-16 検出装置

Publications (3)

Publication Number Publication Date
JP2019160826A JP2019160826A (ja) 2019-09-19
JP2019160826A5 JP2019160826A5 (enExample) 2021-04-15
JP6980567B2 true JP6980567B2 (ja) 2021-12-15

Family

ID=67846023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018040560A Active JP6980567B2 (ja) 2018-03-07 2018-03-07 検出装置

Country Status (5)

Country Link
US (1) US11719573B2 (enExample)
JP (1) JP6980567B2 (enExample)
CN (1) CN111801934B (enExample)
DE (1) DE112019000712T5 (enExample)
WO (1) WO2019171861A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6930614B2 (ja) * 2015-07-31 2021-09-01 株式会社三洋物産 遊技機
JP6930582B2 (ja) * 2015-07-31 2021-09-01 株式会社三洋物産 遊技機
JP6930580B2 (ja) * 2015-07-31 2021-09-01 株式会社三洋物産 遊技機
JP6900990B2 (ja) * 2015-07-31 2021-07-14 株式会社三洋物産 遊技機
JP6930581B2 (ja) * 2015-07-31 2021-09-01 株式会社三洋物産 遊技機
JP6988871B2 (ja) * 2015-07-31 2022-01-05 株式会社三洋物産 遊技機
JP6900984B2 (ja) * 2015-07-31 2021-07-14 株式会社三洋物産 遊技機
JP6900985B2 (ja) * 2016-08-30 2021-07-14 株式会社三洋物産 遊技機
US11171640B2 (en) * 2018-05-02 2021-11-09 Texas Instruments Incorporated Temperature-sensitive transistor gate driver
JP2020022886A (ja) * 2019-11-21 2020-02-13 株式会社三洋物産 遊技機
JP2021118273A (ja) 2020-01-27 2021-08-10 株式会社ジャパンディスプレイ フレキシブル基板
JP7699004B2 (ja) 2021-07-13 2025-06-26 株式会社ジャパンディスプレイ 検出装置
TWI781720B (zh) * 2021-08-10 2022-10-21 友達光電股份有限公司 光偵測裝置
JP7780771B2 (ja) 2021-12-15 2025-12-05 株式会社ジャパンディスプレイ 検出装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7307278B2 (en) 2004-12-22 2007-12-11 General Electric Company Organic electronic devices having two dimensional series interconnections
US20060262055A1 (en) 2005-01-26 2006-11-23 Toshiba Matsushita Display Technology Plane display device
JP5254530B2 (ja) * 2005-01-26 2013-08-07 株式会社ジャパンディスプレイセントラル 平面表示装置
JP5406473B2 (ja) * 2007-07-19 2014-02-05 キヤノン株式会社 放射線検出装置
KR100935403B1 (ko) * 2008-12-10 2010-01-06 이성호 터치 패널
JP2011243894A (ja) * 2010-05-21 2011-12-01 Sanken Electric Co Ltd 有機ｅｌ照明装置
JP2015233169A (ja) * 2012-09-25 2015-12-24 富士フイルム株式会社 放射線画撮影装置、放射線動画撮影システム、放射線画撮影装置の制御方法、及び放射線画撮影制御プログラム
JP2014149816A (ja) * 2013-01-10 2014-08-21 Japan Display Inc タッチ検出機能付き表示装置及び電子機器
JP6700725B2 (ja) * 2015-11-05 2020-05-27 キヤノン株式会社 放射線検出装置、放射線検出システム及び放射線検出装置の制御方法
JP6637344B2 (ja) * 2016-03-09 2020-01-29 株式会社ジャパンディスプレイ 検出装置、表示装置及び電子機器
JP2018032171A (ja) * 2016-08-23 2018-03-01 株式会社ジャパンディスプレイ 表示装置

Also Published As

Publication number Publication date
JP2019160826A (ja) 2019-09-19
CN111801934B (zh) 2022-10-28
DE112019000712T5 (de) 2020-11-26
US20200400491A1 (en) 2020-12-24
US11719573B2 (en) 2023-08-08
CN111801934A (zh) 2020-10-20
WO2019171861A1 (ja) 2019-09-12

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