CN111801934B - 检测装置 - Google Patents

检测装置 Download PDF

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Publication number
CN111801934B
CN111801934B CN201980016555.6A CN201980016555A CN111801934B CN 111801934 B CN111801934 B CN 111801934B CN 201980016555 A CN201980016555 A CN 201980016555A CN 111801934 B CN111801934 B CN 111801934B
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China
Prior art keywords
signal
detection
circuit
electrode
signal line
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CN201980016555.6A
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English (en)
Chinese (zh)
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CN111801934A (zh
Inventor
田中仁
多田正浩
中村卓
水桥比吕志
后藤词贵
加藤博文
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Magno Haote Co ltd
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Japan Display Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Thin Film Transistor (AREA)
CN201980016555.6A 2018-03-07 2019-02-05 检测装置 Active CN111801934B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018-040560 2018-03-07
JP2018040560A JP6980567B2 (ja) 2018-03-07 2018-03-07 検出装置
PCT/JP2019/004113 WO2019171861A1 (ja) 2018-03-07 2019-02-05 検出装置

Publications (2)

Publication Number Publication Date
CN111801934A CN111801934A (zh) 2020-10-20
CN111801934B true CN111801934B (zh) 2022-10-28

Family

ID=67846023

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980016555.6A Active CN111801934B (zh) 2018-03-07 2019-02-05 检测装置

Country Status (5)

Country Link
US (1) US11719573B2 (enExample)
JP (1) JP6980567B2 (enExample)
CN (1) CN111801934B (enExample)
DE (1) DE112019000712T5 (enExample)
WO (1) WO2019171861A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6930614B2 (ja) * 2015-07-31 2021-09-01 株式会社三洋物産 遊技機
JP6930582B2 (ja) * 2015-07-31 2021-09-01 株式会社三洋物産 遊技機
JP6930580B2 (ja) * 2015-07-31 2021-09-01 株式会社三洋物産 遊技機
JP6900990B2 (ja) * 2015-07-31 2021-07-14 株式会社三洋物産 遊技機
JP6930581B2 (ja) * 2015-07-31 2021-09-01 株式会社三洋物産 遊技機
JP6988871B2 (ja) * 2015-07-31 2022-01-05 株式会社三洋物産 遊技機
JP6900984B2 (ja) * 2015-07-31 2021-07-14 株式会社三洋物産 遊技機
JP6900985B2 (ja) * 2016-08-30 2021-07-14 株式会社三洋物産 遊技機
US11171640B2 (en) * 2018-05-02 2021-11-09 Texas Instruments Incorporated Temperature-sensitive transistor gate driver
JP2020022886A (ja) * 2019-11-21 2020-02-13 株式会社三洋物産 遊技機
JP2021118273A (ja) 2020-01-27 2021-08-10 株式会社ジャパンディスプレイ フレキシブル基板
JP7699004B2 (ja) 2021-07-13 2025-06-26 株式会社ジャパンディスプレイ 検出装置
TWI781720B (zh) * 2021-08-10 2022-10-21 友達光電股份有限公司 光偵測裝置
JP7780771B2 (ja) 2021-12-15 2025-12-05 株式会社ジャパンディスプレイ 検出装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100935403B1 (ko) * 2008-12-10 2010-01-06 이성호 터치 패널
CN101682687A (zh) * 2007-07-19 2010-03-24 佳能株式会社 放射线检测设备和放射线成像系统
JP2011243894A (ja) * 2010-05-21 2011-12-01 Sanken Electric Co Ltd 有機ｅｌ照明装置
JP2015233169A (ja) * 2012-09-25 2015-12-24 富士フイルム株式会社 放射線画撮影装置、放射線動画撮影システム、放射線画撮影装置の制御方法、及び放射線画撮影制御プログラム
CN107179848A (zh) * 2016-03-09 2017-09-19 株式会社日本显示器 检测装置、显示装置以及电子设备
CN107765929A (zh) * 2016-08-23 2018-03-06 株式会社日本显示器 显示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7307278B2 (en) 2004-12-22 2007-12-11 General Electric Company Organic electronic devices having two dimensional series interconnections
US20060262055A1 (en) 2005-01-26 2006-11-23 Toshiba Matsushita Display Technology Plane display device
JP5254530B2 (ja) * 2005-01-26 2013-08-07 株式会社ジャパンディスプレイセントラル 平面表示装置
JP2014149816A (ja) * 2013-01-10 2014-08-21 Japan Display Inc タッチ検出機能付き表示装置及び電子機器
JP6700725B2 (ja) * 2015-11-05 2020-05-27 キヤノン株式会社 放射線検出装置、放射線検出システム及び放射線検出装置の制御方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101682687A (zh) * 2007-07-19 2010-03-24 佳能株式会社 放射线检测设备和放射线成像系统
KR100935403B1 (ko) * 2008-12-10 2010-01-06 이성호 터치 패널
JP2011243894A (ja) * 2010-05-21 2011-12-01 Sanken Electric Co Ltd 有機ｅｌ照明装置
JP2015233169A (ja) * 2012-09-25 2015-12-24 富士フイルム株式会社 放射線画撮影装置、放射線動画撮影システム、放射線画撮影装置の制御方法、及び放射線画撮影制御プログラム
CN107179848A (zh) * 2016-03-09 2017-09-19 株式会社日本显示器 检测装置、显示装置以及电子设备
CN107765929A (zh) * 2016-08-23 2018-03-06 株式会社日本显示器 显示装置

Also Published As

Publication number Publication date
JP6980567B2 (ja) 2021-12-15
JP2019160826A (ja) 2019-09-19
DE112019000712T5 (de) 2020-11-26
US20200400491A1 (en) 2020-12-24
US11719573B2 (en) 2023-08-08
CN111801934A (zh) 2020-10-20
WO2019171861A1 (ja) 2019-09-12

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Effective date of registration: 20250729

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Patentee after: Magno Haote Co.,Ltd.

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