JP6975560B2 - 記憶装置 - Google Patents

記憶装置 Download PDF

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Publication number
JP6975560B2
JP6975560B2 JP2017123121A JP2017123121A JP6975560B2 JP 6975560 B2 JP6975560 B2 JP 6975560B2 JP 2017123121 A JP2017123121 A JP 2017123121A JP 2017123121 A JP2017123121 A JP 2017123121A JP 6975560 B2 JP6975560 B2 JP 6975560B2
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Prior art keywords
transistor
circuit
bit line
layer
storage device
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JP2017123121A
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Japanese (ja)
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JP2019008852A (ja
JP2019008852A5 (enExample
Inventor
達也 大貫
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2017123121A priority Critical patent/JP6975560B2/ja
Publication of JP2019008852A publication Critical patent/JP2019008852A/ja
Publication of JP2019008852A5 publication Critical patent/JP2019008852A5/ja
Priority to JP2021181809A priority patent/JP7225349B2/ja
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Publication of JP6975560B2 publication Critical patent/JP6975560B2/ja
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  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
JP2017123121A 2017-06-23 2017-06-23 記憶装置 Active JP6975560B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017123121A JP6975560B2 (ja) 2017-06-23 2017-06-23 記憶装置
JP2021181809A JP7225349B2 (ja) 2017-06-23 2021-11-08 記憶装置

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JP2017123121A JP6975560B2 (ja) 2017-06-23 2017-06-23 記憶装置

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JP2021181809A Division JP7225349B2 (ja) 2017-06-23 2021-11-08 記憶装置

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JP2019008852A JP2019008852A (ja) 2019-01-17
JP2019008852A5 JP2019008852A5 (enExample) 2020-08-13
JP6975560B2 true JP6975560B2 (ja) 2021-12-01

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JP2017123121A Active JP6975560B2 (ja) 2017-06-23 2017-06-23 記憶装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022024001A (ja) * 2017-06-23 2022-02-08 株式会社半導体エネルギー研究所 記憶装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7480113B2 (ja) * 2019-02-22 2024-05-09 株式会社半導体エネルギー研究所 半導体装置および当該半導体装置を有する電気機器
JP7320227B2 (ja) * 2019-09-13 2023-08-03 本田技研工業株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4654671B2 (ja) * 2004-11-29 2011-03-23 ソニー株式会社 半導体記憶装置
US7310257B2 (en) * 2005-11-10 2007-12-18 Micron Technology, Inc. Local digit line architecture and method for memory devices having multi-bit or low capacitance memory cells
US7688648B2 (en) * 2008-09-02 2010-03-30 Juhan Kim High speed flash memory
JP2011040706A (ja) * 2009-07-15 2011-02-24 Toshiba Corp 不揮発性半導体記憶装置
JP2015041388A (ja) * 2013-08-20 2015-03-02 株式会社半導体エネルギー研究所 記憶装置、及び半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022024001A (ja) * 2017-06-23 2022-02-08 株式会社半導体エネルギー研究所 記憶装置
JP7225349B2 (ja) 2017-06-23 2023-02-20 株式会社半導体エネルギー研究所 記憶装置

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JP2019008852A (ja) 2019-01-17

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