JP2019008852A5 - - Google Patents
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- Publication number
- JP2019008852A5 JP2019008852A5 JP2017123121A JP2017123121A JP2019008852A5 JP 2019008852 A5 JP2019008852 A5 JP 2019008852A5 JP 2017123121 A JP2017123121 A JP 2017123121A JP 2017123121 A JP2017123121 A JP 2017123121A JP 2019008852 A5 JP2019008852 A5 JP 2019008852A5
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- transistor
- storage device
- bit line
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017123121A JP6975560B2 (ja) | 2017-06-23 | 2017-06-23 | 記憶装置 |
| JP2021181809A JP7225349B2 (ja) | 2017-06-23 | 2021-11-08 | 記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017123121A JP6975560B2 (ja) | 2017-06-23 | 2017-06-23 | 記憶装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021181809A Division JP7225349B2 (ja) | 2017-06-23 | 2021-11-08 | 記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019008852A JP2019008852A (ja) | 2019-01-17 |
| JP2019008852A5 true JP2019008852A5 (enExample) | 2020-08-13 |
| JP6975560B2 JP6975560B2 (ja) | 2021-12-01 |
Family
ID=65028953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017123121A Active JP6975560B2 (ja) | 2017-06-23 | 2017-06-23 | 記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6975560B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7225349B2 (ja) * | 2017-06-23 | 2023-02-20 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP7480113B2 (ja) * | 2019-02-22 | 2024-05-09 | 株式会社半導体エネルギー研究所 | 半導体装置および当該半導体装置を有する電気機器 |
| JP7320227B2 (ja) * | 2019-09-13 | 2023-08-03 | 本田技研工業株式会社 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4654671B2 (ja) * | 2004-11-29 | 2011-03-23 | ソニー株式会社 | 半導体記憶装置 |
| US7310257B2 (en) * | 2005-11-10 | 2007-12-18 | Micron Technology, Inc. | Local digit line architecture and method for memory devices having multi-bit or low capacitance memory cells |
| US7688648B2 (en) * | 2008-09-02 | 2010-03-30 | Juhan Kim | High speed flash memory |
| JP2011040706A (ja) * | 2009-07-15 | 2011-02-24 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2015041388A (ja) * | 2013-08-20 | 2015-03-02 | 株式会社半導体エネルギー研究所 | 記憶装置、及び半導体装置 |
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2017
- 2017-06-23 JP JP2017123121A patent/JP6975560B2/ja active Active