JP6972427B2 - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
- Publication number
- JP6972427B2 JP6972427B2 JP2021511673A JP2021511673A JP6972427B2 JP 6972427 B2 JP6972427 B2 JP 6972427B2 JP 2021511673 A JP2021511673 A JP 2021511673A JP 2021511673 A JP2021511673 A JP 2021511673A JP 6972427 B2 JP6972427 B2 JP 6972427B2
- Authority
- JP
- Japan
- Prior art keywords
- film formation
- target
- substrate
- film
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0652—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (1)
- 真空チャンバ内でシリコン製のターゲットをスパッタリングして被処理基板の表面に誘電体膜としての窒化シリコン膜を成膜する成膜方法であって、ターゲットのスパッタリング時、ターゲットに対して負の電位をパルス状に印加するものにおいて、
ターゲットに対して投入する投入電力を2kW〜15kWとし、希ガスと反応ガスを真空チャンバ内に導入して圧力を0.01〜30Paとし、負の電位をパルス状に印加するときの周波数を100kHz以上で150kHz以下の範囲、デューティ比を60%以上で85%より小さくし、負の電位の印加時間を5μsecより長くて8μsecより短い範囲に設定することを特徴とする成膜方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019215895 | 2019-11-28 | ||
JP2019215895 | 2019-11-28 | ||
PCT/JP2020/026833 WO2021106262A1 (ja) | 2019-11-28 | 2020-07-09 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6972427B2 true JP6972427B2 (ja) | 2021-11-24 |
JPWO2021106262A1 JPWO2021106262A1 (ja) | 2021-12-02 |
Family
ID=76128838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021511673A Active JP6972427B2 (ja) | 2019-11-28 | 2020-07-09 | 成膜方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220056571A1 (ja) |
JP (1) | JP6972427B2 (ja) |
KR (1) | KR102341593B1 (ja) |
CN (1) | CN114729443A (ja) |
TW (1) | TWI772840B (ja) |
WO (1) | WO2021106262A1 (ja) |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3684593B2 (ja) * | 1993-07-28 | 2005-08-17 | 旭硝子株式会社 | スパッタリング方法およびその装置 |
JPH07224379A (ja) * | 1994-02-14 | 1995-08-22 | Ulvac Japan Ltd | スパッタ方法およびそのスパッタ装置 |
JP3720061B2 (ja) * | 1994-03-24 | 2005-11-24 | 株式会社アルバック | 薄膜抵抗体の直流スパッタ成膜方法 |
US5651865A (en) * | 1994-06-17 | 1997-07-29 | Eni | Preferential sputtering of insulators from conductive targets |
JP3949209B2 (ja) * | 1997-02-20 | 2007-07-25 | 株式会社アルバック | 誘電体膜の成膜方法 |
JP2002533574A (ja) * | 1998-12-21 | 2002-10-08 | アプライド マテリアルズ インコーポレイテッド | 半導体性及び絶縁性物質の物理蒸着装置 |
JP2003003259A (ja) | 2001-06-21 | 2003-01-08 | Hitachi Ltd | 酸化アルミニウム薄膜の形成方法及び窒化アルミニウム薄膜の形成方法 |
JP4370949B2 (ja) * | 2004-03-18 | 2009-11-25 | 旭硝子株式会社 | 成膜方法 |
KR20150128817A (ko) * | 2007-12-21 | 2015-11-18 | 사푸라스트 리써치 엘엘씨 | 전해질 막을 위한 표적을 스퍼터링하는 방법 |
JP2009275281A (ja) * | 2008-05-19 | 2009-11-26 | Panasonic Corp | スパッタリング方法及び装置 |
CN103140601B (zh) * | 2010-10-06 | 2015-08-05 | 株式会社爱发科 | 电介质成膜装置和电介质成膜方法 |
JP2013049885A (ja) * | 2011-08-30 | 2013-03-14 | National Institute Of Advanced Industrial Science & Technology | 炭素薄膜成膜方法 |
JP2015040330A (ja) * | 2013-08-22 | 2015-03-02 | 株式会社ブイ・テクノロジー | スパッタリング成膜装置及びスパッタリング成膜方法 |
JP2015056529A (ja) * | 2013-09-12 | 2015-03-23 | 株式会社Screenホールディングス | 膜形成方法および膜形成装置 |
SG11201800667WA (en) * | 2016-05-23 | 2018-02-27 | Ulvac Inc | Film-forming method and sputtering apparatus |
JP6660603B2 (ja) | 2017-12-05 | 2020-03-11 | パナソニックIpマネジメント株式会社 | スパッタリング方法 |
US11021788B2 (en) * | 2017-12-05 | 2021-06-01 | Panasonic Intellectual Property Management Co., Ltd. | Sputtering method |
-
2020
- 2020-07-09 US US17/273,074 patent/US20220056571A1/en not_active Abandoned
- 2020-07-09 KR KR1020217034161A patent/KR102341593B1/ko active IP Right Grant
- 2020-07-09 CN CN202080082895.1A patent/CN114729443A/zh active Pending
- 2020-07-09 WO PCT/JP2020/026833 patent/WO2021106262A1/ja active Application Filing
- 2020-07-09 JP JP2021511673A patent/JP6972427B2/ja active Active
- 2020-07-14 TW TW109123660A patent/TWI772840B/zh active
Also Published As
Publication number | Publication date |
---|---|
JPWO2021106262A1 (ja) | 2021-12-02 |
TW202120719A (zh) | 2021-06-01 |
KR102341593B1 (ko) | 2021-12-21 |
WO2021106262A1 (ja) | 2021-06-03 |
US20220056571A1 (en) | 2022-02-24 |
CN114729443A (zh) | 2022-07-08 |
TWI772840B (zh) | 2022-08-01 |
KR20210134050A (ko) | 2021-11-08 |
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