JP6970935B2 - 物理量センサ - Google Patents
物理量センサ Download PDFInfo
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- JP6970935B2 JP6970935B2 JP2019525159A JP2019525159A JP6970935B2 JP 6970935 B2 JP6970935 B2 JP 6970935B2 JP 2019525159 A JP2019525159 A JP 2019525159A JP 2019525159 A JP2019525159 A JP 2019525159A JP 6970935 B2 JP6970935 B2 JP 6970935B2
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- JP
- Japan
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- physical quantity
- electrode
- substrate
- diaphragm
- quantity sensor
- Prior art date
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- 239000000758 substrate Substances 0.000 claims description 112
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000010408 film Substances 0.000 description 100
- 238000000034 method Methods 0.000 description 31
- 238000000605 extraction Methods 0.000 description 29
- 239000003990 capacitor Substances 0.000 description 17
- 238000005530 etching Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 238000003825 pressing Methods 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010292 electrical insulation Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 3
- 238000007496 glass forming Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- -1 AlSiCu Inorganic materials 0.000 description 1
- 241000441026 Alticus Species 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Description
2 基板(第1基板)
3 電極
322 凹部
4 ダイヤフラム
42 対向面
46 貫通孔
5 基板(第2基板)
6 誘電体膜
7 壁部
71 突部(第1突部)
72 突部(第2突部)
720 先端
73 突部(第3突部)
76 孔
8 空間
Claims (8)
- 物理量を検出する物理量センサであって、
第1基板と、
前記第1基板に形成されている電極と、
半導体材料により形成されており、前記物理量に応じて撓むダイヤフラムと、
前記ダイヤフラムが前記電極に対して空間を介して対向する対向面を有するように前記ダイヤフラムを支持し、前記第1基板に固定されている第2基板と、
前記ダイヤフラムの前記対向面に形成されている誘電体膜と、
前記誘電体膜と前記電極との間に位置し前記空間を画定する壁部と、
を備え、
前記誘電体膜は前記空間を介して前記電極に対向する面を有し、
前記壁部は、
前記誘電体膜の前記面から前記電極に向かって突出している第1突部と、
前記第1突部から前記電極に向かって突出し前記電極に接触している第2突部と、
を有し、
前記第2突部は前記誘電体膜の材料と異なりかつ窒化物よりなる、物理量センサ。 - 前記誘電体膜の誘電率は前記第2突部の誘電率よりも高い、請求項1に記載の物理量センサ。
- 前記ダイヤフラムの前記対向面から前記電極に向かって突出してかつ前記第1突部により覆われている第3突部をさらに備えた、請求項1又は2に記載の物理量センサ。
- 前記誘電体膜は窒化物よりなる、請求項1から3のいずれか一項に記載の物理量センサ。
- 前記第2突部は、Si−H結合を含有しているシリコン窒化物よりなる、請求項1から4のいずれか一項に記載の物理量センサ。
- 前記電極は、前記誘電体膜に対向してかつ凹部が設けられた表面を有し、
前記第2突部の先端の少なくとも一部は、前記電極の前記凹部内に位置し前記凹部の底面に接触している、請求項1から5のいずれか一項に記載の物理量センサ。 - 前記壁部と前記誘電体膜には、前記壁部と前記誘電体膜とから前記電極の一部を露出させるように前記壁部と前記誘電体膜とを貫通する孔が形成されており、
前記ダイヤフラムは前記孔に繋がる貫通孔が形成されており、
前記ダイヤフラムにおける前記第1基板とは反対側から見て前記貫通孔の内側に前記孔が位置している、請求項1から6のいずれか一項に記載の物理量センサ。 - 前記第1基板はアルカリ成分を含むガラスにより形成されており、
前記第2基板はシリコンにより形成されており、
前記ダイヤフラムは前記第2基板に一体に形成されており、
前記第2基板と前記第1基板とが直接接合されている、請求項1から7のいずれか一項に記載の物理量センサ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017121487 | 2017-06-21 | ||
JP2017121487 | 2017-06-21 | ||
PCT/JP2018/015931 WO2018235415A1 (ja) | 2017-06-21 | 2018-04-18 | 物理量センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018235415A1 JPWO2018235415A1 (ja) | 2020-04-30 |
JP6970935B2 true JP6970935B2 (ja) | 2021-11-24 |
Family
ID=64737083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019525159A Active JP6970935B2 (ja) | 2017-06-21 | 2018-04-18 | 物理量センサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US11156520B2 (ja) |
JP (1) | JP6970935B2 (ja) |
CN (1) | CN110662949B (ja) |
WO (1) | WO2018235415A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116018523A (zh) * | 2021-08-19 | 2023-04-25 | 富士电机株式会社 | 传感器装置和传感器装置的制造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3114570B2 (ja) * | 1995-05-26 | 2000-12-04 | オムロン株式会社 | 静電容量型圧力センサ |
JPH10332511A (ja) * | 1997-05-31 | 1998-12-18 | Omron Corp | 静電容量型圧力センサ |
US6109113A (en) * | 1998-06-11 | 2000-08-29 | Delco Electronics Corp. | Silicon micromachined capacitive pressure sensor and method of manufacture |
EP1522521B1 (en) * | 2003-10-10 | 2015-12-09 | Infineon Technologies AG | Capacitive sensor |
KR100840785B1 (ko) * | 2007-02-16 | 2008-06-23 | 삼성전자주식회사 | 스택형 반도체 소자에서 단결정 실리콘 패턴 형성 방법. |
JP6210992B2 (ja) * | 2011-10-28 | 2017-10-11 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 応力層を持つ事前圧壊容量マイクロマシン・トランスデューサセル |
FI125447B (en) * | 2013-06-04 | 2015-10-15 | Murata Manufacturing Co | Improved pressure sensor |
JP6176609B2 (ja) | 2013-08-21 | 2017-08-09 | パナソニックIpマネジメント株式会社 | 半導体物理量センサ |
JP6119615B2 (ja) * | 2014-01-08 | 2017-04-26 | 三菱電機株式会社 | 半導体装置の製造方法 |
CN105329837A (zh) * | 2014-06-03 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及电子装置 |
CN105314586A (zh) * | 2014-07-29 | 2016-02-10 | 精工爱普生株式会社 | 物理量传感器、压力传感器、高度计、电子设备以及移动体 |
JP6251661B2 (ja) * | 2014-09-26 | 2017-12-20 | 株式会社日立製作所 | 超音波トランスデューサ、その製造方法、超音波トランスデューサアレイ及び超音波検査装置 |
JP6587870B2 (ja) * | 2015-09-01 | 2019-10-09 | アズビル株式会社 | 微細機械装置およびその製造方法 |
-
2018
- 2018-04-18 CN CN201880033575.XA patent/CN110662949B/zh active Active
- 2018-04-18 WO PCT/JP2018/015931 patent/WO2018235415A1/ja active Application Filing
- 2018-04-18 JP JP2019525159A patent/JP6970935B2/ja active Active
-
2019
- 2019-11-01 US US16/671,738 patent/US11156520B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US11156520B2 (en) | 2021-10-26 |
CN110662949B (zh) | 2021-06-18 |
WO2018235415A1 (ja) | 2018-12-27 |
US20200064214A1 (en) | 2020-02-27 |
CN110662949A (zh) | 2020-01-07 |
JPWO2018235415A1 (ja) | 2020-04-30 |
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