JP6956710B2 - 化学機械研磨キャリアヘッド用の外部クランプリング - Google Patents
化学機械研磨キャリアヘッド用の外部クランプリング Download PDFInfo
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- JP6956710B2 JP6956710B2 JP2018518965A JP2018518965A JP6956710B2 JP 6956710 B2 JP6956710 B2 JP 6956710B2 JP 2018518965 A JP2018518965 A JP 2018518965A JP 2018518965 A JP2018518965 A JP 2018518965A JP 6956710 B2 JP6956710 B2 JP 6956710B2
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- 238000005498 polishing Methods 0.000 title claims description 51
- 239000000126 substance Substances 0.000 title claims description 11
- 230000002209 hydrophobic effect Effects 0.000 claims description 45
- 238000000576 coating method Methods 0.000 claims description 42
- 239000011248 coating agent Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 20
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- 239000004812 Fluorinated ethylene propylene Substances 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 229920009441 perflouroethylene propylene Polymers 0.000 claims description 4
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- OKTJSMMVPCPJKN-OUBTZVSYSA-N Carbon-13 Chemical compound [13C] OKTJSMMVPCPJKN-OUBTZVSYSA-N 0.000 claims 1
- 239000002002 slurry Substances 0.000 description 23
- 239000002245 particle Substances 0.000 description 14
- 239000012528 membrane Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000005054 agglomeration Methods 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
Claims (19)
- 化学機械研磨キャリアヘッド用の外部クランプリングであって、
上面、下面、円筒形外壁および円筒形内壁を有する円筒形本体と、
前記本体の前記円筒形外壁および前記円筒形内壁上に配置された疎水性層と
を備え、
前記上面および前記下面には前記疎水性層は配置されていない、外部クランプリング。 - 前記疎水性層が、約400nmから約100nmの間の厚さを有する、請求項1に記載の外部クランプリング。
- 前記上面および前記下面は、前記円筒形内壁および前記円筒形外壁の高さよりも短い幅を有する、請求項1に記載の外部クランプリング。
- 前記上面および前記下面の前記幅が前記円筒形内壁および前記円筒形外壁の前記高さの4分の1未満であってよい、請求項3に記載の外部クランプリング。
- 前記外部クランプリングの輪郭が細い円筒形帯である、請求項1に記載の外部クランプリング。
- 前記円筒形外壁上の前記疎水性層が、
約16マイクロインチRa以下の表面粗さを備える、請求項1に記載の外部クランプリング。 - 前記円筒形外壁が、
約16マイクロインチRa以下の表面粗さを備える、請求項1に記載の外部クランプリング。 - 前記円筒形内壁が、
約16マイクロインチRa以下の表面粗さを備える、請求項7に記載の外部クランプリング。 - 前記疎水性層が、
シリコンベースのコーティング材料、または炭素含有材料を含む、請求項1に記載の外部クランプリング。 - 前記疎水性層が、
カルボキシランから成るシリコンベースのコーティング材料を含む、請求項1に記載の外部クランプリング。 - 前記疎水性層が、
ペルフルオロアルコキシアルカン(PFA)、フッ素化エチレンプロピレン(FEP)から成る群から選択されたPTFEベースのコーティング材料を含む、請求項1に記載の外部クランプリング。 - 前記疎水性層が、
パリレン(ポリパラキシレン)、パリレンC(塩素化直鎖ポリパラキシレン)、パリレンN(直鎖ポリパラキシレン)、パリレンX(架橋ポリパラキシレン)、ポリエーテルエーテルケトン、およびダイヤモンドライクカーボン(DLC)から成る群から選択された炭素含有材料を含む、請求項1に記載の外部クランプリング。 - 化学機械研磨キャリアヘッド用の外部クランプリングであって、
上壁、下壁、円筒形外壁および円筒形内壁を有する細い円筒形帯と、
前記上壁でも前記下壁でもない前記円筒形外壁および前記円筒形内壁上に配置された疎水性層とを備え、前記疎水性層が、シリコンベースのコーティング材料を含み、
前記上壁および前記下壁には前記疎水性層は配置されていない、外部クランプリング。 - 前記疎水性層が約400nmから約100nmまでの厚さを有する、請求項1または請求項13に記載の外部クランプリング。
- 前記円筒形外壁上の前記疎水性層が、
約16マイクロインチRa未満の表面粗さを備える、請求項13に記載の外部クランプリング。 - 前記円筒形外壁が、
約16マイクロインチRa以下の表面粗さを備える、請求項13に記載の外部クランプリング。 - 前記円筒形内壁上の前記疎水性層が、
約32マイクロインチRa以下の表面粗さを備える、請求項16に記載の外部クランプリング。 - 前記疎水性層が、
カルボキシラン、パリレン(ポリパラキシレン)、パリレンC(塩素化直鎖ポリパラキシレン)、パリレンN(直鎖ポリパラキシレン)、パリレンX(架橋ポリパラキシレン)、ポリエーテルエーテルケトン、およびダイヤモンドライクカーボン(DLC)から成る群から選択されたコーティング材料を含む、請求項13に記載の外部クランプリング。 - キャリアヘッドであって、
上面および下面を有する本体であって、前記本体の前記下面が、そこから延びる取り付けリングを有する、本体と、
前記本体に結合された保持リングと、
前記保持リングの内側に配置され、前記保持リングが外接する可撓性膜であって、前記キャリアヘッド内に保持された基板と接触するように構成された外側を有する可撓性膜と、
前記可撓性膜を前記取り付けリングに固定する外部クランプリングであって、上壁、下壁、円筒形内壁、および、間隔を隔てた関係で前記保持リングに対向する円筒形外壁を有し、前記円筒形内壁および前記円筒形外壁が、疎水性コーティングでコーティングされ、前記上壁および前記下壁が疎水性コーティングでコーティングされていない、外部クランプリングと
を備える、キャリアヘッド。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562242946P | 2015-10-16 | 2015-10-16 | |
US62/242,946 | 2015-10-16 | ||
US15/176,998 | 2016-06-08 | ||
US15/176,998 US10029346B2 (en) | 2015-10-16 | 2016-06-08 | External clamp ring for a chemical mechanical polishing carrier head |
PCT/US2016/045626 WO2017065861A1 (en) | 2015-10-16 | 2016-08-04 | External clamp ring for a chemical mechanical polishing carrier head |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018531804A JP2018531804A (ja) | 2018-11-01 |
JP2018531804A5 JP2018531804A5 (ja) | 2019-09-12 |
JP6956710B2 true JP6956710B2 (ja) | 2021-11-02 |
Family
ID=58517708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018518965A Active JP6956710B2 (ja) | 2015-10-16 | 2016-08-04 | 化学機械研磨キャリアヘッド用の外部クランプリング |
Country Status (7)
Country | Link |
---|---|
US (1) | US10029346B2 (ja) |
EP (1) | EP3363041B1 (ja) |
JP (1) | JP6956710B2 (ja) |
KR (1) | KR102640177B1 (ja) |
CN (2) | CN106965077B (ja) |
TW (2) | TWI680828B (ja) |
WO (1) | WO2017065861A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7003838B2 (ja) * | 2018-05-17 | 2022-01-21 | 株式会社Sumco | 研磨ヘッド及びこれを用いたウェーハ研磨装置及び研磨方法 |
CN108857909A (zh) * | 2018-07-20 | 2018-11-23 | 宁波江丰电子材料股份有限公司 | 一种用于cmp保持环粘接面的加工方法以及cmp保持环的制备方法 |
JP7374710B2 (ja) * | 2019-10-25 | 2023-11-07 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
CN110842766B (zh) * | 2019-11-26 | 2022-07-12 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种芯片装载机构及芯片研抛系统 |
CN116000784A (zh) * | 2022-12-29 | 2023-04-25 | 西安奕斯伟材料科技股份有限公司 | 硅片双面抛光装置的承载件及硅片双面抛光装置 |
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US10702972B2 (en) * | 2012-05-31 | 2020-07-07 | Ebara Corporation | Polishing apparatus |
KR101392401B1 (ko) * | 2012-11-30 | 2014-05-07 | 이화다이아몬드공업 주식회사 | 컨디셔너 겸용 웨이퍼 리테이너링 및 상기 리테이너링 제조방법 |
KR102059524B1 (ko) * | 2013-02-19 | 2019-12-27 | 삼성전자주식회사 | 화학적 기계적 연마 장치와 연마 헤드 어셈블리 |
WO2014163735A1 (en) * | 2013-03-13 | 2014-10-09 | Applied Materials, Inc. | Reinforcement ring for carrier head |
US9731399B2 (en) | 2013-10-04 | 2017-08-15 | Applied Materials, Inc. | Coated retaining ring |
CN103862364A (zh) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | 研磨垫、研磨机台及研磨方法 |
KR20160013461A (ko) * | 2014-07-25 | 2016-02-04 | 삼성전자주식회사 | 캐리어 헤드 및 화학적 기계식 연마 장치 |
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2016
- 2016-06-08 US US15/176,998 patent/US10029346B2/en active Active
- 2016-08-04 KR KR1020187013720A patent/KR102640177B1/ko active IP Right Grant
- 2016-08-04 JP JP2018518965A patent/JP6956710B2/ja active Active
- 2016-08-04 WO PCT/US2016/045626 patent/WO2017065861A1/en active Application Filing
- 2016-08-04 EP EP16855890.6A patent/EP3363041B1/en active Active
- 2016-09-09 TW TW105129259A patent/TWI680828B/zh active
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Also Published As
Publication number | Publication date |
---|---|
TWM544392U (zh) | 2017-07-01 |
WO2017065861A1 (en) | 2017-04-20 |
TWI680828B (zh) | 2020-01-01 |
EP3363041B1 (en) | 2023-06-07 |
CN106965077B (zh) | 2021-07-30 |
TW201714705A (zh) | 2017-05-01 |
EP3363041A1 (en) | 2018-08-22 |
KR102640177B1 (ko) | 2024-02-22 |
JP2018531804A (ja) | 2018-11-01 |
US10029346B2 (en) | 2018-07-24 |
US20170106496A1 (en) | 2017-04-20 |
KR20180058838A (ko) | 2018-06-01 |
CN106965077A (zh) | 2017-07-21 |
EP3363041A4 (en) | 2019-06-12 |
CN206602095U (zh) | 2017-10-31 |
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