CN106965077B - 用于化学机械抛光承载头的外部夹环 - Google Patents
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- 238000005498 polishing Methods 0.000 title claims abstract description 53
- 239000000126 substance Substances 0.000 title claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 60
- 239000011248 coating agent Substances 0.000 claims abstract description 59
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims description 41
- 239000012528 membrane Substances 0.000 claims description 32
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 230000003746 surface roughness Effects 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000004812 Fluorinated ethylene propylene Substances 0.000 claims description 4
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 239000003575 carbonaceous material Substances 0.000 claims description 4
- 229920009441 perflouroethylene propylene Polymers 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 claims description 3
- 229920001774 Perfluoroether Polymers 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- YENOLDYITNSPMQ-UHFFFAOYSA-N carboxysilicon Chemical compound OC([Si])=O YENOLDYITNSPMQ-UHFFFAOYSA-N 0.000 claims 2
- 239000002002 slurry Substances 0.000 description 17
- 239000002245 particle Substances 0.000 description 14
- 230000007547 defect Effects 0.000 description 6
- 239000012530 fluid Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000006748 scratching Methods 0.000 description 3
- 230000002393 scratching effect Effects 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- ACECBHHKGNTVPB-UHFFFAOYSA-N silylformic acid Chemical class OC([SiH3])=O ACECBHHKGNTVPB-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- B24B37/00—Lapping machines or devices; Accessories
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- Engineering & Computer Science (AREA)
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Abstract
本发明描述了用于具有疏水涂层的化学机械抛光(CMP)承载头的外部夹环,和具有所述外部夹环的承载头。在一个实施方式中,提供一种包括圆柱体的外部夹环,所述圆柱体具有外圆柱壁和内圆柱壁。疏水层被设置在外圆柱壁上。
Description
技术领域
本文所述的实施方式一般涉及用于化学机械抛光承载头的夹环,其中所述夹环包括被配置以防止浆料颗粒对夹环粘附和结块的外圆柱壁。
背景技术
集成电路典型地通过导电层、半导电层,或绝缘层的顺序沉积而形成在基板(诸如硅晶片)上。在沉积了每一层之后,所述层被蚀刻以产生电路特征。随着一系列层被顺序地沉积和蚀刻,基板的外表面或最高表面(即,基板的暴露表面)变得越来越非平面。所述非平面的外表面为集成电路制造商带来了问题。因此,需要周期性地平面化基板表面以提供平面。
化学机械抛光(Chemical mechanical polishing;CMP)是一种可接受的平面化方法。CMP典型地要求基板以离开所暴露基板的装置侧表面的方式由承载头所保持。承载头将基板相抵于旋转抛光垫定位。承载头在基板上提供可控制的负载(即,压力)以将基板相抵旋转抛光垫推动。另外,承载头可旋转以在基板与抛光表面之间提供附加的运动。
包括研磨剂和至少一种化学反应剂的抛光液可被提供至抛光垫,以在研磨垫和基板之间的界面处提供研磨化学溶液。抛光液也可接触和粘附于承载头表面。随着时间推移,抛光液之内的研磨剂开始在承载头的表面上结块。结块的浆料颗粒可能从承载头表面上脱落,并且在抛光基板时落在抛光垫上,如此可能导致基板刮伤。刮伤可能导致基板缺陷,这在抛光成品装置时导致性能降低。此结块的浆料颗粒对于在基板抛光之间无法有效清洗的承载头的表面上尤其成问题。
因此,需要改进承载头的组成以降低抛光液粘附于承载头的可能性。
发明内容
本发明描述了用于具有疏水涂层的化学机械抛光(CMP)承载头的外部夹环,和具有所述外部夹环的承载头。在一个实施方式中,提供一种包括圆柱体的外部夹环,所述圆柱体具有外圆柱壁和内圆柱壁。所安置的疏水涂层是在外圆柱壁上。
在另一实施方式中,提供一种包括薄圆柱带的用于化学机械抛光承载头的外部夹环,所述薄圆柱带具有外圆柱壁和内圆柱壁。疏水涂层被设置在外圆柱壁上。疏水涂层是由硅基涂层材料、聚四氟乙烯(PTFE或Teflon)基涂层材料或含碳材料制成。
在又一实施方式中,提供一种承载头,所述承载头包括主体、保持环、柔性膜和外部夹环。主体具有安装上表面和下表面。主体还具有从主体下表面延伸的安装环。保持环被耦接至主体和限定柔性膜。柔性构件具有被配置以接触保持在承载头中的基板的外侧。外部夹环将柔性膜固定至安装环。外部夹环具有外圆柱壁,所述外圆柱壁以定距离间隔关系的面向保持环。外圆柱壁涂有疏水涂层。
附图说明
并入且构成本说明书的一部分的附图示意地示出本发明且与上文给出的一般描述和下文给出的详细描述一起用于解释本发明的原理。
图1示出用于抛光保持在承载头中的基板的化学机械抛光(CMP)工具的部分侧视截面图;
图2示出承载头的一部分的放大截面图,此图示出外部夹环的一部分;和
图3是外部夹环的截面图。
为清楚起见,在可能的情况下,已使用相同的元件符号指定各附图之间共用的相同元件。可以预期,在一个实施方式中公开的元件可有利地用于其它实施方式,而无需特定叙述。
具体实施方式
本文描述了用于化学机械抛光承载头的夹环,所述化学机械抛光承载头被配置以大体上降低或防止浆料颗粒对夹环的粘附或结块。对粘附于夹环的夹环的浆料颗粒的减少显著地降低了浆料颗粒在夹环上结块的可能性,其中结块的颗粒可能落在抛光垫上且成为基板刮伤的来源。因此,与传统的夹环相比,本文所述的夹环极大地有助于基板缺陷降低。
图1是示例性化学机械抛光(CMP)系统100的部分截面图,所述化学机械抛光系统100包括承载头150,所述承载头150利用外部夹环120的一个实施方式以便将柔性膜140固定至承载头150。在CMP系统100的基板135的处理期间,柔性膜140被用于将保持在承载头150中的基板135(以虚线示出)保持与抛光垫175的抛光表面180接触。外部夹环120包括下文进一步参看图3所示的疏水涂层,所述疏水涂层显著地降低了承载头150之内的浆料颗粒的粘附和结块,由此显著地降低了在CMP系统100上的抛光期间基板缺陷产生的可能性。
继续参看图1,CMP系统100通常包括臂部170,所述臂部170将承载头150支撑在抛光垫175之上。在通过抛光液传递臂122向抛光垫175的抛光表面180提供抛光液的情况下,承载头150和抛光垫175的至少一个或两个被移动以在保持在承载头150中的基板135和抛光垫175之间赋予相对运动以处理基板135。在一些实施方式中,承载头150和抛光垫175的至少一个或两个被通过承载头150旋转,所述承载头150在处理期间相抵抛光表面180按压基板135。
在图1中所示的实施方式中,承载头150是通过轴108耦接至臂部170。诸如马达、气压缸等等的致动器102被耦接至轴108且可操作以在平行于抛光表面180的方向上相对于臂部170振动承载头150。承载头150还包括诸如马达、气压缸等等的致动器104,以在相对于抛光垫175的方向上移动承载头150。例如,致动器104可被用于在处理期间将保持于承载头150中的基板135相抵抛光垫175的抛光表面180按压。承载头150还可被耦接至诸如马达等等的旋转致动器106,所述旋转致动器106可操作以旋转承载头150。因此,致动器102、106可用于在处理期间移动承载头150以提供相对于抛光垫175的抛光表面180的基板135的相对运动。
承载头150包括由保持环160限定的主体125。保持环160限定保持在承载头150中的基板135,以便基板135在抛光期间不从承载头150之下滑出。保持环160可通过致动器102耦接至主体125。致动器102可操作以独立于由基板135施加于抛光表面180上的力来控制施加于抛光垫175的抛光表面180上的力的大小。
主体125通常包括上表面126和下表面124。上表面126将主体125耦接至轴108。下表面124包括安装环128,柔性膜140通过外部夹环120固定至安装环128。安装环128和柔性膜140之间的连接是参看以下图2进一步详述。
继续参看图1,一或更多个囊状物110、112被设置在柔性膜140和主体125的下表面124之间。当使用两个或更多个囊状物110、112时,诸如囊状物110的一或更多个囊状物可限定其它囊状物(诸如囊状物112)或横跨柔性膜140的背侧产生通常同心的区域。囊状物110、112被耦接至有选择地传递流体至囊状物110、112以施加力至柔性膜140的压力源145,所述柔性膜140传递力至基板135。压力源145可施加相同或不同的压力至每一囊状物110、112。在一个实施方式中,囊状物110可施加一个力至柔性膜140的外部区域,而囊状物112施加力至柔性膜140的中央区域。从囊状物110、112施加至柔性膜140的力可被传输至基板135的各部分,且可用于控制基板135相抵抛光垫175的抛光表面180施加的边缘至中心压力分布。另外,真空可被施加于囊状物110、112或施加于柔性膜140之后以相抵基板135的背侧施加吸力,从而促进基板135保持在承载头150中。可适于受益于本发明的承载头150的实例包括可尤其从美国加州圣克拉拉市的应用材料公司获得的TITAN HEADTM、TITAN CONTOURTM和TITAN PROFILERTM承载头,也可包括可从其它制造商获得的那些承载头。
现参看图2中所示的示出安装环128和柔性膜140之间的连接的承载头150的一部分的放大截面图,柔性膜140通常包括连接至圆柱壁204的中心区域202。柔性膜140可由工艺相容合成橡胶制成。
中心区域202可以是平面状圆盘,包括外侧206和内侧208。外侧206通常在保持在承载头150中时接触基板135,且内侧208通常面向主体125的下表面124和接触一或更多个囊状物110、112。
圆柱壁204通常以远离外侧206的方向从柔性膜140的内侧208延伸。圆柱壁204被调整尺寸以在承载头150的安装环128之上滑动。
圆柱壁204也可包括下凸缘210和上凸缘212。下凸缘210和上凸缘212从圆柱壁204径向向外延伸。下凸缘210可被设置在圆柱壁204的近端214,所述近端214邻近于圆柱壁204和中心区域202之间的连接。在一些实施方式中,下凸缘210可与中心区域202共面。上凸缘212被设置在圆柱壁204的远端216。下凸缘210和上凸缘212之间的间隔形成夹环接收凹穴(pocket)218。
外部夹环120通常由刚性的工艺相容材料制成。在一个实施方式中,外部夹环120是由金属制成,所述金属诸如是不锈钢、钛、铝等等。外部夹环120具有内圆柱壁130和外圆柱壁132。内圆柱壁130通常被调整大小以略微大于安装环128的直径。外部夹环120的外圆柱壁132具有小于保持环160的直径的直径。
当柔性膜140位于安装环128之上时,外部夹环120通过将外部夹环120压配合在柔性膜140的圆柱壁204之上而将柔性膜140固定至承载头150的主体125。外部夹环120相抵外部夹环120压缩柔性膜140的圆柱壁204,从而将柔性膜140固定至承载头150。外部夹环120通常在下凸缘210之上滑动至夹环接收凹穴218中,以帮助将外部夹环120相对于柔性膜140定位。一旦在夹环接收凹穴218中,外圆柱壁132就被暴露于设置在承载头150中、侧向地界定在柔性膜140和保持环160之间的间隔190,如图1的放大部分所示。随着间隔190打开,承载头150的外部被暴露于抛光表面180,抛光液可在处理期间进入间隔190。有利地,外圆柱壁132被配置以阻止间隔190之内的抛光液粘住外部夹环120的外圆柱壁132,如下文进一步所述,从而有助于排除在处理时对基板135的潜在缺陷。
图3是外部夹环120的截面图。如上所述,外部夹环120包括内圆柱壁130和外圆柱壁132,所述内圆柱壁130和外圆柱壁132界定外部夹环120的内径和外径。外部夹环120还包括上壁302和下壁304。上壁302和下壁304可彼此平行,且垂直于外部夹环120的中心线320。壁130、132、302和304可被布置以界定矩形轮廓。在一个实施方式中,上壁302和下壁304的宽度短于内圆柱壁130和外圆柱壁132的高度,以使得外部夹环120的轮廓是薄的圆柱带。例如,壁部302、304的宽度可小于内圆柱壁和外圆柱壁130、132的高度的四分之一。
在一或更多个实施方式中,外部夹环120的至少外圆柱壁132是由疏水涂层310所覆盖。选择性地,其它壁部130、302、304的一或更多个也可由疏水涂层310所覆盖。设置在外圆柱壁132上的疏水涂层310阻止抛光液粘附于外部夹环120,从而大体上有助于防止在外部夹环120上的浆料颗粒结块且最终有助于减少基板缺陷。
如上文所论述,疏水涂层310可被选择性地设置在内圆柱壁130上,如此有助于将外部夹环120滑动至柔性膜140之上的位置中。内圆柱壁130上的疏水涂层310的存在允许相抵安装环128以紧配合安装外部夹环120,产生柔性膜140的较高压缩,同时最终提供柔性膜140对承载头150的主体125的改进保持。选择性地,可从内圆柱壁130和上壁302及下壁304的一或更多个中省略疏水涂层310以降低外部夹环120的成本。选择性地,从上壁302及下壁304的一或更多个中省略疏水涂层310可帮助将外部夹环120保持在夹环接收凹穴218中。
疏水涂层310可以是硅基涂层、PTFE基涂层或其它疏水涂层材料。适合用作疏水涂层310的PTFE基涂层材料尤其包括全氟烷氧基树脂(perfluoroalkoxy alkane;PFA)、氟化乙烯丙烯(fluorinated ethylene propylene;FEP)。对于PTFE基涂层,疏水涂层310可具有小于约30μm的厚度,诸如在约5μm和约25μm之间的厚度。适合用作疏水涂层310的硅基涂层材料尤其包括羧基硅烷(carboxysilane)。对于硅基涂层材料,疏水涂层310可具有小于约2μm的厚度,诸如在约0.4μm和约1.6μm之间的厚度。适合用作疏水涂层310的碳基涂层材料尤其包括碳氟化合物。对于碳氟化合物,疏水涂层310可具有小于约100nm的厚度。
适合用作疏水涂层310的其它涂层材料包括含碳材料,诸如聚对二甲苯(parylene),例如氯化线性聚对二甲苯(Parylene C)、线性聚对二甲苯(Parylene N),和交联聚对二甲苯(Parylene X)。可被使用的其它含碳材料包括聚醚醚酮(polyether etherketones;PEEK)和类金刚石碳(diamond-like carbon;DLC)。
疏水涂层310可被应用于添加剂制造操作中,诸如在用于形成疏水涂层310的印刷工艺期间。或者,疏水涂层310可通过喷雾、浸渍或其它适当方法施加。在一些实施方式中,外圆柱壁132上的疏水涂层310可具有小于约32微英寸的绝对值表面粗糙度(Ra)的算术平均值。
在一些实施方式中,外部夹环120的外圆柱壁132可具有小于约16微英寸的表面粗糙度(Ra)。外部夹环120的外圆柱壁132的光滑表面加工促使疏水涂层310也非常光滑,即,比壁部132的加工更持久,如此有助于阻止抛光液粘附于外部夹环120。在其中抛光液不是特别易于粘住承载头表面的应用中,如果外圆柱壁132的表面粗糙度小于或等于约16微英寸(Ra),那么可选择性地从外部夹环120的外圆柱壁132省略疏水涂层310。
外部夹环120的其它壁部130、302、304通常具有约32微英寸Ra或更高的表面光洁度。特别地,内圆柱壁130上的32微英寸的Ra或更高的表面光洁度有助于将外部夹环120在柔性膜140的圆柱壁204之上保持就位。当非必要时使用小于32微英寸的Ra或更高的表面光洁度允许外部夹环120的成本被降低,同时仍防止浆料颗粒对外部夹环120的粘附。
因此,上文已经描述了大体上减少或防止浆料颗粒对外部夹环的外圆柱壁粘附和结块的外部夹环。对粘附于夹环的夹环的浆料颗粒的减少显著地降低了浆料颗粒在夹环上结块的可能性,其中结块的颗粒可能落在抛光垫上且成为基板刮伤的来源。因此,与传统的夹环相比,本文所述的夹环极大地有助于基板缺陷降低。
Claims (16)
1.一种用于化学机械抛光承载头的外部夹环,所述外部夹环包含:
圆柱体,具有上表面、下表面、外圆柱壁和内圆柱壁;和
疏水涂层,设置在所述圆柱体的所述外圆柱壁和所述内圆柱壁上,而所述上表面和下表面不具有设置在其上的疏水层,
其中所述疏水涂层具有在400nm和100nm之间的厚度,并且
其中所述外圆柱壁包含:小于或等于16微英寸的表面粗糙度Ra。
2.如权利要求1所述的外部夹环,其中所述上表面和下表面具有短于所述内圆柱壁和外圆柱壁的高度的宽度。
3.如权利要求2所述的外部夹环,其中所述上表面和下表面的宽度可小于所述内圆柱壁和外圆柱壁的高度的四分之一。
4.如权利要求1所述的外部夹环,其中所述圆柱体进一步包含:
薄圆柱带。
5.如权利要求1所述的外部夹环,其中所述外圆柱壁上的所述疏水涂层包含:
小于16微英寸的表面粗糙度Ra。
6.如权利要求1所述的外部夹环,其中所述内圆柱壁包含:
小于或等于16微英寸的表面粗糙度Ra。
7.如权利要求1所述的外部夹环,其中所述疏水涂层包含:
硅基涂层材料或含碳材料。
8.如权利要求1所述的外部夹环,其中所述疏水涂层包含:
由羧基硅烷组成的硅基涂层材料。
9.如权利要求1所述的外部夹环,其中所述疏水涂层包含:
PTFE基涂层材料,所述PTFE基涂层材料选自由全氟烷氧基树脂(PFA)、氟化乙烯丙烯(FEP)组成的组。
10.如权利要求1所述的外部夹环,其中所述疏水涂层包含:
含碳材料,所述含碳材料选自由聚对二甲苯(parylene)、氯化线性聚对二甲苯(Parylene C)、线性聚对二甲苯(Parylene N)、交联聚对二甲苯(Parylene X)、聚醚醚酮和类金刚石碳(DLC)组成的组。
11.如权利要求1所述的外部夹环,其中所述疏水涂层是使用添加剂制造操作、喷雾或浸渍施加。
12.一种用于化学机械抛光承载头的外部夹环,所述外部夹环包含:
薄圆柱带,具有上壁、下壁、外圆柱壁和内圆柱壁;和
疏水涂层,设置在所述外圆柱壁和内圆柱壁上而不在所述上壁或下壁上,所述疏水涂层包含硅基涂层材料,
其中所述疏水涂层具有在400nm和100nm之间的厚度,并且
其中所述外圆柱壁包含:小于或等于16微英寸的表面粗糙度Ra。
13.如权利要求12所述的外部夹环,其中所述外圆柱壁上的所述疏水涂层包含:
小于16微英寸的表面粗糙度Ra。
14.如权利要求12所述的外部夹环,其中所述内圆柱壁包含:
大于或等于32微英寸的表面粗糙度Ra。
15.如权利要求12所述的外部夹环,其中所述疏水涂层包含:涂层材料,所述涂层材料选自由羧基硅烷、聚对二甲苯(parylene)、氯化线性聚对二甲苯(Parylene C)、线性聚对二甲苯(Parylene N)、交联聚对二甲苯(Parylene X)、聚醚醚酮和类金刚石碳(DLC)组成的组。
16.一种承载头,包含:
主体,具有上表面和下表面,所述主体的所述下表面具有从所述主体延伸的安装环;
保持环,耦接至所述主体;
柔性膜,在保持环中向内设置且由保持环限定,所述柔性构件具有被配置以接触保持在所述承载头中的基板的外侧;和
外部夹环,将所述柔性膜固定至所述安装环,所述外部夹环具有上壁、下壁、内圆柱壁和以定距离间隔的关系面向所述保持环的外圆柱壁,所述内圆柱壁和外圆柱壁涂有疏水涂层,从所述上壁和下壁都省略所述疏水涂层,
其中所述疏水涂层具有在400nm和100nm之间的厚度,并且
其中所述外圆柱壁包含:小于或等于16微英寸的表面粗糙度Ra。
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JP7003838B2 (ja) * | 2018-05-17 | 2022-01-21 | 株式会社Sumco | 研磨ヘッド及びこれを用いたウェーハ研磨装置及び研磨方法 |
CN108857909A (zh) * | 2018-07-20 | 2018-11-23 | 宁波江丰电子材料股份有限公司 | 一种用于cmp保持环粘接面的加工方法以及cmp保持环的制备方法 |
JP7374710B2 (ja) * | 2019-10-25 | 2023-11-07 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
CN110842766B (zh) * | 2019-11-26 | 2022-07-12 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 一种芯片装载机构及芯片研抛系统 |
CN116000784A (zh) * | 2022-12-29 | 2023-04-25 | 西安奕斯伟材料科技股份有限公司 | 硅片双面抛光装置的承载件及硅片双面抛光装置 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6024630A (en) | 1995-06-09 | 2000-02-15 | Applied Materials, Inc. | Fluid-pressure regulated wafer polishing head |
US6183354B1 (en) * | 1996-11-08 | 2001-02-06 | Applied Materials, Inc. | Carrier head with a flexible membrane for a chemical mechanical polishing system |
US5990012A (en) | 1998-01-27 | 1999-11-23 | Micron Technology, Inc. | Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads |
US6436228B1 (en) | 1998-05-15 | 2002-08-20 | Applied Materials, Inc. | Substrate retainer |
US6159079A (en) | 1998-09-08 | 2000-12-12 | Applied Materials, Inc. | Carrier head for chemical mechanical polishing a substrate |
US6132298A (en) * | 1998-11-25 | 2000-10-17 | Applied Materials, Inc. | Carrier head with edge control for chemical mechanical polishing |
US6165058A (en) | 1998-12-09 | 2000-12-26 | Applied Materials, Inc. | Carrier head for chemical mechanical polishing |
US6444326B1 (en) * | 1999-03-05 | 2002-09-03 | Restek Corporation | Surface modification of solid supports through the thermal decomposition and functionalization of silanes |
US6450868B1 (en) * | 2000-03-27 | 2002-09-17 | Applied Materials, Inc. | Carrier head with multi-part flexible membrane |
US6602114B1 (en) * | 2000-05-19 | 2003-08-05 | Applied Materials Inc. | Multilayer retaining ring for chemical mechanical polishing |
US20040005842A1 (en) * | 2000-07-25 | 2004-01-08 | Chen Hung Chih | Carrier head with flexible membrane |
US6872130B1 (en) | 2001-12-28 | 2005-03-29 | Applied Materials Inc. | Carrier head with non-contact retainer |
US6945845B2 (en) | 2003-03-04 | 2005-09-20 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with non-conductive elements |
JP4086722B2 (ja) * | 2003-06-24 | 2008-05-14 | 株式会社荏原製作所 | 基板保持装置及び研磨装置 |
US20070049164A1 (en) | 2005-08-26 | 2007-03-01 | Thomson Clifford O | Polishing pad and method for manufacturing polishing pads |
KR100774096B1 (ko) | 2005-08-30 | 2007-11-06 | 강준모 | 화학기계적 연마를 위한 리테이닝 링 |
JP5026710B2 (ja) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US7699688B2 (en) * | 2006-11-22 | 2010-04-20 | Applied Materials, Inc. | Carrier ring for carrier head |
US20090023368A1 (en) * | 2007-07-18 | 2009-01-22 | United Microelectronics Corp. | Polishing head and edge control ring thereof, and method of increasing polishing rate at wafer edge |
JP2009034745A (ja) * | 2007-07-31 | 2009-02-19 | Nippon Seimitsu Denshi Co Ltd | Cmp装置用リテーナリング |
US7530887B2 (en) * | 2007-08-16 | 2009-05-12 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with controlled wetting |
KR101024674B1 (ko) | 2007-12-28 | 2011-03-25 | 신한다이아몬드공업 주식회사 | 소수성 절삭공구 및 그제조방법 |
US20090242125A1 (en) * | 2008-03-25 | 2009-10-01 | Applied Materials, Inc. | Carrier Head Membrane |
WO2010141464A2 (en) | 2009-06-02 | 2010-12-09 | Saint-Gobain Abrasives, Inc. | Corrosion-resistant cmp conditioning tools and methods for making and using same |
KR101911196B1 (ko) * | 2009-10-27 | 2018-10-24 | 실코텍 코포레이션 | 화학적 증기 증착 코팅, 물품, 및 방법 |
TWI574785B (zh) * | 2010-08-06 | 2017-03-21 | 應用材料股份有限公司 | 內扣環及外扣環 |
EP2625307B1 (en) * | 2010-10-05 | 2017-11-15 | Silcotek Corp. | Wear resistant article |
JP5635482B2 (ja) * | 2011-11-30 | 2014-12-03 | 株式会社荏原製作所 | 弾性膜 |
CN103302587B (zh) * | 2012-03-16 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨装置及系统 |
KR20130131120A (ko) | 2012-05-23 | 2013-12-03 | 삼성전자주식회사 | 연마 헤드용 가요성 멤브레인 |
US10702972B2 (en) * | 2012-05-31 | 2020-07-07 | Ebara Corporation | Polishing apparatus |
KR101392401B1 (ko) * | 2012-11-30 | 2014-05-07 | 이화다이아몬드공업 주식회사 | 컨디셔너 겸용 웨이퍼 리테이너링 및 상기 리테이너링 제조방법 |
KR102059524B1 (ko) * | 2013-02-19 | 2019-12-27 | 삼성전자주식회사 | 화학적 기계적 연마 장치와 연마 헤드 어셈블리 |
US9381613B2 (en) * | 2013-03-13 | 2016-07-05 | Applied Materials, Inc. | Reinforcement ring for carrier head |
WO2015051134A1 (en) | 2013-10-04 | 2015-04-09 | Applied Materials, Inc. | Coated retaining ring |
CN103862364A (zh) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | 研磨垫、研磨机台及研磨方法 |
KR20160013461A (ko) * | 2014-07-25 | 2016-02-04 | 삼성전자주식회사 | 캐리어 헤드 및 화학적 기계식 연마 장치 |
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- 2016-09-09 TW TW105129259A patent/TWI680828B/zh active
- 2016-09-09 TW TW105213920U patent/TWM544392U/zh unknown
- 2016-09-20 CN CN201610833897.5A patent/CN106965077B/zh active Active
- 2016-09-20 CN CN201621064946.5U patent/CN206602095U/zh active Active
Also Published As
Publication number | Publication date |
---|---|
TWI680828B (zh) | 2020-01-01 |
US10029346B2 (en) | 2018-07-24 |
JP2018531804A (ja) | 2018-11-01 |
JP6956710B2 (ja) | 2021-11-02 |
WO2017065861A1 (en) | 2017-04-20 |
EP3363041A4 (en) | 2019-06-12 |
US20170106496A1 (en) | 2017-04-20 |
TWM544392U (zh) | 2017-07-01 |
EP3363041B1 (en) | 2023-06-07 |
KR102640177B1 (ko) | 2024-02-22 |
KR20180058838A (ko) | 2018-06-01 |
TW201714705A (zh) | 2017-05-01 |
CN106965077A (zh) | 2017-07-21 |
EP3363041A1 (en) | 2018-08-22 |
CN206602095U (zh) | 2017-10-31 |
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