JP6947734B2 - リアルタイムのプロセス評価 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Description
本出願は、2016年1月28日に出願された「リアルタイムのプロセス評価(REAL TIME PROCESS CHARACTERIZATION)」と題する米国仮特許出願第15/009,705号の利益を主張するものであり、すべての目的のためにその全体が参照により本明細書に組み込まれる。
Claims (15)
- 基板と、
前記基板の支持面に形成された複数のセンサであって、各センサが処理条件に対応する出力信号を生成可能であり、前記複数のセンサは前記支持面にわたって複数の整列した同心円状に分布し、前記複数の整列した同心円の内側の1つの円は前記複数の整列した同心円の外側の1つの円よりセンサが少なく、前記複数の整列した同心円の前記内側の1つの円のセンサは全て前記複数の整列した同心円の中心から同じ第1の距離にあり、前記複数の整列した同心円の前記外側の1つの円のセンサは全て前記複数の整列した同心円の前記中心から同じ第2の距離にあり、前記第2の距離は前記第1の距離より大きく、前記複数の整列した同心円の各々は異なる数のセンサを含む、複数のセンサと、
前記基板の上に形成されたネットワークインターフェースデバイスであって、前記複数のセンサの各々が、前記ネットワークインターフェースデバイスに通信可能に接続される、ネットワークインターフェースデバイスと
を含むプロセスモニタリングデバイス。 - 前記ネットワークインターフェースデバイスが、前記基板内に埋め込まれる、請求項1に記載のプロセスモニタリングデバイス。
- 前記センサの各々が、電気配線によって前記ネットワークインターフェースデバイスに通信可能に接続される、請求項1に記載のプロセスモニタリングデバイス。
- 前記複数のセンサが、前記支持面で一又は複数のゾーンにわたって分散される、請求項1に記載のプロセスモニタリングデバイス。
- 前記複数のセンサが、複数のセンサバンクにグループ化される、請求項1に記載のプロセスモニタリングデバイス。
- 各センサバンクが複数のセンサを含み、かつ各センサバンクが一又は複数の異なる種類のセンサを含む、請求項5に記載のプロセスモニタリングデバイス。
- 前記センサのうちの少なくとも1つが、トランジスタセンサ又は共振器センサである、請求項6に記載のプロセスモニタリングデバイス。
- 一又は複数のセンサバンクが、パターン形成された特徴を含む、請求項5に記載のプロセスモニタリングデバイス。
- 前記出力信号が電圧、電流、周波数又は時間測定値であり、前記処理条件が、膜の厚さ、粒子の有無、質量、基板温度、チャック温度、表面電荷、磁場強度、特定ガス濃度、プラズマの電子エネルギー分布関数(EEDF)、又はVDCのうちの一又は複数を含む、請求項1に記載のプロセスモニタリングデバイス。
- 前記支持面に形成された交換可能な層
を更に含む、請求項1に記載のプロセスモニタリングデバイス。 - 基板処理動作をモニタリングするための方法であって、
処理ステーションでプロセスモニタリングデバイス上で処理動作を開始することであって、前記プロセスモニタリングデバイスが、前記プロセスモニタリングデバイスの支持面にわたって分散した複数のセンサを含み、前記センサが、処理条件に対応するセンサ出力を生成し、前記複数のセンサは前記支持面にわたって複数の整列した同心円状に分布し、前記複数の整列した同心円の内側の1つの円は前記複数の整列した同心円の外側の1つの円よりセンサが少なく、前記複数の整列した同心円の前記内側の1つの円のセンサは全て前記複数の整列した同心円の中心から同じ第1の距離にあり、前記複数の整列した同心円の前記外側の1つの円のセンサは全て前記複数の整列した同心円の前記中心から同じ第2の距離にあり、前記第2の距離は前記第1の距離より大きく、前記複数の整列した同心円の各々は異なる数のセンサを含む、処理動作を開始することと、
前記処理動作中に前記プロセスモニタリングデバイスから前記センサ出力を受信することと
を含む方法。 - 前記プロセスモニタリングデバイスにおけるクロックを、前記処理ステーションに関連するクロックと同期させること
を更に含む、請求項11に記載の方法。 - 処理チャンバデータを前記センサ出力に重ねることを更に含む、請求項12に記載の方法。
- 出力信号が、電圧、電流、周波数、又は時間測定値である、請求項11に記載の方法。
- 前記処理条件が、膜の厚さ、粒子の有無、質量、基板温度、チャック温度、表面電荷、磁場強度、特定ガス濃度、プラズマの電子エネルギー分布関数(EEDF)、又はVDCのうちの一又は複数を含む、請求項11に記載の方法。
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JP2021117170A JP7170099B2 (ja) | 2016-01-28 | 2021-07-15 | リアルタイムのプロセス評価 |
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US15/009,705 | 2016-01-28 | ||
US15/009,705 US10818561B2 (en) | 2016-01-28 | 2016-01-28 | Process monitor device having a plurality of sensors arranged in concentric circles |
PCT/US2016/066409 WO2017131878A1 (en) | 2016-01-28 | 2016-12-13 | Real time process characterization |
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JP2021117170A Division JP7170099B2 (ja) | 2016-01-28 | 2021-07-15 | リアルタイムのプロセス評価 |
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JP2019508888A JP2019508888A (ja) | 2019-03-28 |
JP6947734B2 true JP6947734B2 (ja) | 2021-10-13 |
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JP2021117170A Active JP7170099B2 (ja) | 2016-01-28 | 2021-07-15 | リアルタイムのプロセス評価 |
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US (2) | US10818561B2 (ja) |
JP (2) | JP6947734B2 (ja) |
KR (2) | KR20240055907A (ja) |
CN (2) | CN108604556B (ja) |
TW (2) | TWI731915B (ja) |
WO (1) | WO2017131878A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7365324B2 (ja) | 2015-12-24 | 2023-10-19 | 株式会社Fuji | 実装装置 |
US20170221783A1 (en) * | 2016-01-28 | 2017-08-03 | Leonard TEDESCHI | Self-aware production wafers |
CN107424947A (zh) * | 2017-08-16 | 2017-12-01 | 君泰创新(北京)科技有限公司 | 薄膜电池工艺设备的温度测试方法及系统 |
US10763143B2 (en) * | 2017-08-18 | 2020-09-01 | Applied Materials, Inc. | Processing tool having a monitoring device |
US10901021B2 (en) | 2018-02-27 | 2021-01-26 | Applied Materials, Inc. | Method for detecting wafer processing parameters with micro resonator array sensors |
US12009235B2 (en) * | 2020-12-01 | 2024-06-11 | Applied Materials, Inc. | In-chamber low-profile sensor assembly |
US11619594B2 (en) | 2021-04-28 | 2023-04-04 | Applied Materials, Inc. | Multiple reflectometry for measuring etch parameters |
KR20240013156A (ko) * | 2021-05-26 | 2024-01-30 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 모니터 시스템, 플라즈마 모니터 방법 및 모니터 장치 |
US12074074B2 (en) * | 2021-06-07 | 2024-08-27 | Taiwan Semiconductor Manufacturing Company Ltd. | Method and system for processing wafer |
US12062529B2 (en) * | 2021-08-05 | 2024-08-13 | Applied Materials, Inc. | Microwave resonator array for plasma diagnostics |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5864773A (en) * | 1995-11-03 | 1999-01-26 | Texas Instruments Incorporated | Virtual sensor based monitoring and fault detection/classification system and method for semiconductor processing equipment |
US6244121B1 (en) | 1998-03-06 | 2001-06-12 | Applied Materials, Inc. | Sensor device for non-intrusive diagnosis of a semiconductor processing system |
US6366690B1 (en) * | 1998-07-07 | 2002-04-02 | Applied Materials, Inc. | Pixel based machine for patterned wafers |
US7294563B2 (en) * | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
US6696362B2 (en) | 2001-02-08 | 2004-02-24 | Applied Materials Inc. | Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes |
US20030115978A1 (en) * | 2001-12-20 | 2003-06-26 | Moehnke Stephanie J. | Apparatus and method for monitoring environment within a container |
US6889568B2 (en) * | 2002-01-24 | 2005-05-10 | Sensarray Corporation | Process condition sensing wafer and data analysis system |
JP2005531912A (ja) * | 2002-07-03 | 2005-10-20 | 東京エレクトロン株式会社 | 半導体プラズマパラメータの非侵入性の測定と解析のための方法と装置 |
US6830650B2 (en) | 2002-07-12 | 2004-12-14 | Advanced Energy Industries, Inc. | Wafer probe for measuring plasma and surface characteristics in plasma processing environments |
JP3916549B2 (ja) | 2002-10-31 | 2007-05-16 | 東京エレクトロン株式会社 | プロセスモニタ及び半導体製造装置 |
US6807503B2 (en) | 2002-11-04 | 2004-10-19 | Brion Technologies, Inc. | Method and apparatus for monitoring integrated circuit fabrication |
US7151366B2 (en) | 2002-12-03 | 2006-12-19 | Sensarray Corporation | Integrated process condition sensing wafer and data analysis system |
JP4363860B2 (ja) | 2003-02-04 | 2009-11-11 | 株式会社日立ハイテクノロジーズ | 真空処理装置の異物管理装置及び異物管理方法 |
EP1715332A3 (de) * | 2003-10-28 | 2007-04-11 | Mettler-Toledo AG | Thermoanalytischer Sensor und Verfahren zu dessen Herstellung |
JPWO2005050346A1 (ja) | 2003-11-21 | 2007-06-07 | 日本電気株式会社 | コンテンツ配信及び受信装置,コンテンツ送受信システム,コンテンツ配信及び受信方法,コンテンツ配信及び受信用プログラム |
US20050225308A1 (en) | 2004-03-31 | 2005-10-13 | Orvek Kevin J | Real-time monitoring of particles in semiconductor vacuum environment |
US20060234398A1 (en) * | 2005-04-15 | 2006-10-19 | International Business Machines Corporation | Single ic-chip design on wafer with an embedded sensor utilizing rf capabilities to enable real-time data transmission |
US8026113B2 (en) * | 2006-03-24 | 2011-09-27 | Tokyo Electron Limited | Method of monitoring a semiconductor processing system using a wireless sensor network |
US7521915B2 (en) | 2006-04-25 | 2009-04-21 | Sokudo Co., Ltd. | Wafer bevel particle detection |
US7555948B2 (en) * | 2006-05-01 | 2009-07-07 | Lynn Karl Wiese | Process condition measuring device with shielding |
US8823933B2 (en) * | 2006-09-29 | 2014-09-02 | Cyberoptics Corporation | Substrate-like particle sensor |
JP5064835B2 (ja) * | 2007-02-28 | 2012-10-31 | 株式会社アルバック | 基板搬送装置 |
JP5407019B2 (ja) * | 2007-08-31 | 2014-02-05 | ラピスセミコンダクタ株式会社 | プラズマモニタリング方法 |
US20090302002A1 (en) * | 2008-02-29 | 2009-12-10 | Applied Materials, Inc. | Method and apparatus for removing polymer from a substrate |
JP2009244174A (ja) * | 2008-03-31 | 2009-10-22 | Tokyo Electron Ltd | ウェハ型温度計、温度測定装置、熱処理装置および温度測定方法 |
JP2010048717A (ja) * | 2008-08-22 | 2010-03-04 | Tokai Rika Co Ltd | 位置検出装置 |
US8135560B2 (en) * | 2009-01-30 | 2012-03-13 | Applied Materials, Inc. | Sensor system for semiconductor manufacturing apparatus |
JP5434109B2 (ja) * | 2009-02-06 | 2014-03-05 | セイコーエプソン株式会社 | 超音波センサーユニット |
JP5399730B2 (ja) * | 2009-02-12 | 2014-01-29 | 株式会社Kelk | センサ付き基板およびセンサ付き基板の製造方法 |
KR100988872B1 (ko) * | 2009-07-08 | 2010-10-20 | 주식회사 나노포토닉스 | 회전 대칭형의 광각 렌즈를 이용하여 복합 영상을 얻는 방법과 그 영상 시스템 및 하드웨어적으로 영상처리를 하는 이미지 센서 |
US8676537B2 (en) * | 2009-08-07 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Portable wireless sensor |
US8889021B2 (en) * | 2010-01-21 | 2014-11-18 | Kla-Tencor Corporation | Process condition sensing device and method for plasma chamber |
US8878926B2 (en) * | 2010-09-17 | 2014-11-04 | Applied Materials, Inc. | Apparatus and method for analyzing thermal properties of composite structures |
US8700199B2 (en) * | 2011-03-21 | 2014-04-15 | International Business Machines Corporation | Passive resonator, a system incorporating the passive resonator for real-time intra-process monitoring and control and an associated method |
US20130058543A1 (en) * | 2011-09-06 | 2013-03-07 | The Proctor & Gamble Company | Systems, devices, and methods for image analysis |
US9360302B2 (en) * | 2011-12-15 | 2016-06-07 | Kla-Tencor Corporation | Film thickness monitor |
US20140262031A1 (en) * | 2013-03-12 | 2014-09-18 | Sergey G. BELOSTOTSKIY | Multi-mode etch chamber source assembly |
US9267781B2 (en) * | 2013-11-19 | 2016-02-23 | Infineon Technologies Ag | On-axis magnetic field angle sensors, systems and methods |
US9636797B2 (en) * | 2014-02-12 | 2017-05-02 | Applied Materials, Inc. | Adjusting eddy current measurements |
US9618588B2 (en) * | 2014-04-25 | 2017-04-11 | Infineon Technologies Ag | Magnetic field current sensors, sensor systems and methods |
CN106164778B (zh) * | 2014-04-28 | 2018-02-09 | Asml荷兰有限公司 | 估计图案形成装置的变形和/或其位置的改变 |
US10522380B2 (en) | 2014-06-20 | 2019-12-31 | Applied Materials, Inc. | Method and apparatus for determining substrate placement in a process chamber |
KR102236587B1 (ko) * | 2014-09-04 | 2021-04-06 | 삼성전자주식회사 | 인덕션 장치 및 온도 조절 방법 |
US10067070B2 (en) * | 2015-11-06 | 2018-09-04 | Applied Materials, Inc. | Particle monitoring device |
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