JP6944949B2 - 電荷が中和されたイオンビームのための無線周波数抽出システム - Google Patents
電荷が中和されたイオンビームのための無線周波数抽出システム Download PDFInfo
- Publication number
- JP6944949B2 JP6944949B2 JP2018553427A JP2018553427A JP6944949B2 JP 6944949 B2 JP6944949 B2 JP 6944949B2 JP 2018553427 A JP2018553427 A JP 2018553427A JP 2018553427 A JP2018553427 A JP 2018553427A JP 6944949 B2 JP6944949 B2 JP 6944949B2
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- 238000010884 ion-beam technique Methods 0.000 title claims description 44
- 238000000605 extraction Methods 0.000 title claims description 40
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- 238000000926 separation method Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 7
- 238000010292 electrical insulation Methods 0.000 claims description 5
- 230000009977 dual effect Effects 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 description 47
- 238000004088 simulation Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
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- 239000004065 semiconductor Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005591 charge neutralization Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
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- 239000002245 particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/133,261 US10224181B2 (en) | 2016-04-20 | 2016-04-20 | Radio frequency extraction system for charge neutralized ion beam |
| US15/133,261 | 2016-04-20 | ||
| PCT/US2017/028372 WO2017184736A1 (en) | 2016-04-20 | 2017-04-19 | Radio frequency extraction system for charge neutralized ion beam |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019519064A JP2019519064A (ja) | 2019-07-04 |
| JP2019519064A5 JP2019519064A5 (enExample) | 2020-05-28 |
| JP6944949B2 true JP6944949B2 (ja) | 2021-10-06 |
Family
ID=60089727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018553427A Active JP6944949B2 (ja) | 2016-04-20 | 2017-04-19 | 電荷が中和されたイオンビームのための無線周波数抽出システム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10224181B2 (enExample) |
| JP (1) | JP6944949B2 (enExample) |
| KR (1) | KR102268345B1 (enExample) |
| CN (1) | CN109417012B (enExample) |
| TW (1) | TWI734755B (enExample) |
| WO (1) | WO2017184736A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019182191A1 (ko) | 2018-03-21 | 2019-09-26 | 경북대학교 산학협력단 | C0x2 아세틸화제를 유효성분으로 포함하는 퇴행성 신경질환의 예방 또는 치료용 약학적 조성물 |
| US11056319B2 (en) * | 2019-07-29 | 2021-07-06 | Applied Materials, Inc. | Apparatus and system having extraction assembly for wide angle ion beam |
| KR102442204B1 (ko) | 2019-09-20 | 2022-09-08 | 경북대학교 산학협력단 | Cox2 단백질의 아세틸화 검출용 항체 및 이의 용도 |
| CN113539773B (zh) * | 2020-04-16 | 2024-07-02 | 新动力等离子体株式会社 | 具有双重输出的高频发生器及其驱动方法 |
| US11495430B2 (en) | 2020-07-15 | 2022-11-08 | Applied Materials, Inc. | Tunable extraction assembly for wide angle ion beam |
| US12400845B2 (en) * | 2021-11-29 | 2025-08-26 | Applied Materials, Inc. | Ion energy control on electrodes in a plasma reactor |
| WO2023238235A1 (ja) * | 2022-06-07 | 2023-12-14 | 株式会社日立ハイテク | プラズマ処理装置 |
| WO2024226135A1 (en) * | 2023-04-24 | 2024-10-31 | Applied Materials, Inc. | A multi-electrode source assembly for plasma processing |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6478924B1 (en) * | 2000-03-07 | 2002-11-12 | Applied Materials, Inc. | Plasma chamber support having dual electrodes |
| JP3912993B2 (ja) * | 2001-03-26 | 2007-05-09 | 株式会社荏原製作所 | 中性粒子ビーム処理装置 |
| JP2007242368A (ja) * | 2006-03-07 | 2007-09-20 | Shincron:Kk | ニュートラライザおよびこれを備えた成膜装置 |
| US7498592B2 (en) | 2006-06-28 | 2009-03-03 | Wisconsin Alumni Research Foundation | Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams |
| US20080132046A1 (en) * | 2006-12-04 | 2008-06-05 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping With Electronically Controllable Implant Angle |
| US20090084987A1 (en) * | 2007-09-28 | 2009-04-02 | Varian Semiconductor Equipment Associates, Inc. | Charge neutralization in a plasma processing apparatus |
| US20100330300A1 (en) * | 2008-01-30 | 2010-12-30 | Stowell Michael W | System and method for pre-ionization of surface wave launched plasma discharge sources |
| US20120104274A1 (en) * | 2009-07-16 | 2012-05-03 | Canon Anelva Corporation | Ion beam generating apparatus, substrate processing apparatus and method of manufacturing electronic device |
| US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
| JP5495138B2 (ja) * | 2011-10-31 | 2014-05-21 | 日新イオン機器株式会社 | イオン源 |
| US8907300B2 (en) * | 2013-03-14 | 2014-12-09 | Varian Semiconductor Equipment Associates, Inc. | System and method for plasma control using boundary electrode |
| US9711316B2 (en) | 2013-10-10 | 2017-07-18 | Varian Semiconductor Equipment Associates, Inc. | Method of cleaning an extraction electrode assembly using pulsed biasing |
| US9269542B2 (en) | 2013-11-01 | 2016-02-23 | Varian Semiconductor Equipment Associates, Inc. | Plasma cathode charged particle lithography system |
| FR3020235B1 (fr) | 2014-04-17 | 2016-05-27 | Ecole Polytech | Dispositif de formation d'un faisceau quasi-neutre de particules de charges opposees. |
| US9230773B1 (en) | 2014-10-16 | 2016-01-05 | Varian Semiconductor Equipment Associates, Inc. | Ion beam uniformity control |
-
2016
- 2016-04-20 US US15/133,261 patent/US10224181B2/en active Active
-
2017
- 2017-03-21 TW TW106109286A patent/TWI734755B/zh active
- 2017-04-19 WO PCT/US2017/028372 patent/WO2017184736A1/en not_active Ceased
- 2017-04-19 JP JP2018553427A patent/JP6944949B2/ja active Active
- 2017-04-19 CN CN201780024188.5A patent/CN109417012B/zh active Active
- 2017-04-19 KR KR1020187033334A patent/KR102268345B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI734755B (zh) | 2021-08-01 |
| US10224181B2 (en) | 2019-03-05 |
| JP2019519064A (ja) | 2019-07-04 |
| KR20180127656A (ko) | 2018-11-29 |
| WO2017184736A1 (en) | 2017-10-26 |
| TW201802860A (zh) | 2018-01-16 |
| KR102268345B1 (ko) | 2021-06-24 |
| US20170309453A1 (en) | 2017-10-26 |
| CN109417012A (zh) | 2019-03-01 |
| CN109417012B (zh) | 2021-07-09 |
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