KR102268345B1 - 전하 중성화 이온 빔에 대한 라디오 주파수 추출 시스템 - Google Patents

전하 중성화 이온 빔에 대한 라디오 주파수 추출 시스템 Download PDF

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KR102268345B1
KR102268345B1 KR1020187033334A KR20187033334A KR102268345B1 KR 102268345 B1 KR102268345 B1 KR 102268345B1 KR 1020187033334 A KR1020187033334 A KR 1020187033334A KR 20187033334 A KR20187033334 A KR 20187033334A KR 102268345 B1 KR102268345 B1 KR 102268345B1
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South Korea
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extraction
plate
plasma
opening
plasma chamber
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Korean (ko)
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KR20180127656A (ko
Inventor
코스텔 빌뢰우
피요트르 루비키
테일러 락웰
크리스토퍼 캠벨
비크람 싱
케빈 엠. 대니얼스
리차드 제이. 허텔
피터 에프. 쿠룬지
알렉산드레 리칸스키
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020187033334A 2016-04-20 2017-04-19 전하 중성화 이온 빔에 대한 라디오 주파수 추출 시스템 Active KR102268345B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/133,261 US10224181B2 (en) 2016-04-20 2016-04-20 Radio frequency extraction system for charge neutralized ion beam
US15/133,261 2016-04-20
PCT/US2017/028372 WO2017184736A1 (en) 2016-04-20 2017-04-19 Radio frequency extraction system for charge neutralized ion beam

Publications (2)

Publication Number Publication Date
KR20180127656A KR20180127656A (ko) 2018-11-29
KR102268345B1 true KR102268345B1 (ko) 2021-06-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187033334A Active KR102268345B1 (ko) 2016-04-20 2017-04-19 전하 중성화 이온 빔에 대한 라디오 주파수 추출 시스템

Country Status (6)

Country Link
US (1) US10224181B2 (enExample)
JP (1) JP6944949B2 (enExample)
KR (1) KR102268345B1 (enExample)
CN (1) CN109417012B (enExample)
TW (1) TWI734755B (enExample)
WO (1) WO2017184736A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019182191A1 (ko) 2018-03-21 2019-09-26 경북대학교 산학협력단 C0x2 아세틸화제를 유효성분으로 포함하는 퇴행성 신경질환의 예방 또는 치료용 약학적 조성물
US11056319B2 (en) * 2019-07-29 2021-07-06 Applied Materials, Inc. Apparatus and system having extraction assembly for wide angle ion beam
KR102442204B1 (ko) 2019-09-20 2022-09-08 경북대학교 산학협력단 Cox2 단백질의 아세틸화 검출용 항체 및 이의 용도
CN113539773B (zh) * 2020-04-16 2024-07-02 新动力等离子体株式会社 具有双重输出的高频发生器及其驱动方法
US11495430B2 (en) 2020-07-15 2022-11-08 Applied Materials, Inc. Tunable extraction assembly for wide angle ion beam
US12400845B2 (en) * 2021-11-29 2025-08-26 Applied Materials, Inc. Ion energy control on electrodes in a plasma reactor
WO2023238235A1 (ja) * 2022-06-07 2023-12-14 株式会社日立ハイテク プラズマ処理装置
WO2024226135A1 (en) * 2023-04-24 2024-10-31 Applied Materials, Inc. A multi-electrode source assembly for plasma processing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080132046A1 (en) 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US20120104274A1 (en) 2009-07-16 2012-05-03 Canon Anelva Corporation Ion beam generating apparatus, substrate processing apparatus and method of manufacturing electronic device
US20150101634A1 (en) 2013-10-10 2015-04-16 Varian Semiconductor Equipment Associates, Inc. Method Of Cleaning An Extraction Electrode Assembly Using Pulsed Biasing

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478924B1 (en) * 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
JP3912993B2 (ja) * 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP2007242368A (ja) * 2006-03-07 2007-09-20 Shincron:Kk ニュートラライザおよびこれを備えた成膜装置
US7498592B2 (en) 2006-06-28 2009-03-03 Wisconsin Alumni Research Foundation Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams
US20090084987A1 (en) * 2007-09-28 2009-04-02 Varian Semiconductor Equipment Associates, Inc. Charge neutralization in a plasma processing apparatus
US20100330300A1 (en) * 2008-01-30 2010-12-30 Stowell Michael W System and method for pre-ionization of surface wave launched plasma discharge sources
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
JP5495138B2 (ja) * 2011-10-31 2014-05-21 日新イオン機器株式会社 イオン源
US8907300B2 (en) * 2013-03-14 2014-12-09 Varian Semiconductor Equipment Associates, Inc. System and method for plasma control using boundary electrode
US9269542B2 (en) 2013-11-01 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Plasma cathode charged particle lithography system
FR3020235B1 (fr) 2014-04-17 2016-05-27 Ecole Polytech Dispositif de formation d'un faisceau quasi-neutre de particules de charges opposees.
US9230773B1 (en) 2014-10-16 2016-01-05 Varian Semiconductor Equipment Associates, Inc. Ion beam uniformity control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080132046A1 (en) 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US20120104274A1 (en) 2009-07-16 2012-05-03 Canon Anelva Corporation Ion beam generating apparatus, substrate processing apparatus and method of manufacturing electronic device
US20150101634A1 (en) 2013-10-10 2015-04-16 Varian Semiconductor Equipment Associates, Inc. Method Of Cleaning An Extraction Electrode Assembly Using Pulsed Biasing

Also Published As

Publication number Publication date
TWI734755B (zh) 2021-08-01
US10224181B2 (en) 2019-03-05
JP2019519064A (ja) 2019-07-04
KR20180127656A (ko) 2018-11-29
WO2017184736A1 (en) 2017-10-26
TW201802860A (zh) 2018-01-16
JP6944949B2 (ja) 2021-10-06
US20170309453A1 (en) 2017-10-26
CN109417012A (zh) 2019-03-01
CN109417012B (zh) 2021-07-09

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