CN109417012B - 处理设备及处理衬底的方法 - Google Patents

处理设备及处理衬底的方法 Download PDF

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Publication number
CN109417012B
CN109417012B CN201780024188.5A CN201780024188A CN109417012B CN 109417012 B CN109417012 B CN 109417012B CN 201780024188 A CN201780024188 A CN 201780024188A CN 109417012 B CN109417012 B CN 109417012B
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China
Prior art keywords
extraction
plate
plasma
aperture
radio frequency
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CN201780024188.5A
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English (en)
Chinese (zh)
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CN109417012A (zh
Inventor
科斯特尔·拜洛
皮尔·卢比克
泰勒·洛克威尔
克里斯多夫·坎贝尔
维克拉姆·辛
凯文·M·丹尼尔斯
理查德·J·赫尔特
彼得·F·库鲁尼西
亚历山大·利坎斯奇
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication of CN109417012A publication Critical patent/CN109417012A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN201780024188.5A 2016-04-20 2017-04-19 处理设备及处理衬底的方法 Active CN109417012B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/133,261 US10224181B2 (en) 2016-04-20 2016-04-20 Radio frequency extraction system for charge neutralized ion beam
US15/133,261 2016-04-20
PCT/US2017/028372 WO2017184736A1 (en) 2016-04-20 2017-04-19 Radio frequency extraction system for charge neutralized ion beam

Publications (2)

Publication Number Publication Date
CN109417012A CN109417012A (zh) 2019-03-01
CN109417012B true CN109417012B (zh) 2021-07-09

Family

ID=60089727

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780024188.5A Active CN109417012B (zh) 2016-04-20 2017-04-19 处理设备及处理衬底的方法

Country Status (6)

Country Link
US (1) US10224181B2 (enExample)
JP (1) JP6944949B2 (enExample)
KR (1) KR102268345B1 (enExample)
CN (1) CN109417012B (enExample)
TW (1) TWI734755B (enExample)
WO (1) WO2017184736A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019182191A1 (ko) 2018-03-21 2019-09-26 경북대학교 산학협력단 C0x2 아세틸화제를 유효성분으로 포함하는 퇴행성 신경질환의 예방 또는 치료용 약학적 조성물
US11056319B2 (en) * 2019-07-29 2021-07-06 Applied Materials, Inc. Apparatus and system having extraction assembly for wide angle ion beam
KR102442204B1 (ko) 2019-09-20 2022-09-08 경북대학교 산학협력단 Cox2 단백질의 아세틸화 검출용 항체 및 이의 용도
CN113539773B (zh) * 2020-04-16 2024-07-02 新动力等离子体株式会社 具有双重输出的高频发生器及其驱动方法
US11495430B2 (en) 2020-07-15 2022-11-08 Applied Materials, Inc. Tunable extraction assembly for wide angle ion beam
US12400845B2 (en) * 2021-11-29 2025-08-26 Applied Materials, Inc. Ion energy control on electrodes in a plasma reactor
WO2023238235A1 (ja) * 2022-06-07 2023-12-14 株式会社日立ハイテク プラズマ処理装置
WO2024226135A1 (en) * 2023-04-24 2024-10-31 Applied Materials, Inc. A multi-electrode source assembly for plasma processing

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242368A (ja) * 2006-03-07 2007-09-20 Shincron:Kk ニュートラライザおよびこれを備えた成膜装置
CN101821836A (zh) * 2007-09-28 2010-09-01 瓦里安半导体设备公司 等离子体处理装置中的电荷中和
CN103094027A (zh) * 2011-10-31 2013-05-08 日新离子机器株式会社 引出电极系统及狭缝电极
US9230773B1 (en) * 2014-10-16 2016-01-05 Varian Semiconductor Equipment Associates, Inc. Ion beam uniformity control

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478924B1 (en) * 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
JP3912993B2 (ja) * 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
US7498592B2 (en) 2006-06-28 2009-03-03 Wisconsin Alumni Research Foundation Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams
US20080132046A1 (en) * 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US20100330300A1 (en) * 2008-01-30 2010-12-30 Stowell Michael W System and method for pre-ionization of surface wave launched plasma discharge sources
US20120104274A1 (en) * 2009-07-16 2012-05-03 Canon Anelva Corporation Ion beam generating apparatus, substrate processing apparatus and method of manufacturing electronic device
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
US8907300B2 (en) * 2013-03-14 2014-12-09 Varian Semiconductor Equipment Associates, Inc. System and method for plasma control using boundary electrode
US9711316B2 (en) 2013-10-10 2017-07-18 Varian Semiconductor Equipment Associates, Inc. Method of cleaning an extraction electrode assembly using pulsed biasing
US9269542B2 (en) 2013-11-01 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Plasma cathode charged particle lithography system
FR3020235B1 (fr) 2014-04-17 2016-05-27 Ecole Polytech Dispositif de formation d'un faisceau quasi-neutre de particules de charges opposees.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242368A (ja) * 2006-03-07 2007-09-20 Shincron:Kk ニュートラライザおよびこれを備えた成膜装置
CN101821836A (zh) * 2007-09-28 2010-09-01 瓦里安半导体设备公司 等离子体处理装置中的电荷中和
CN103094027A (zh) * 2011-10-31 2013-05-08 日新离子机器株式会社 引出电极系统及狭缝电极
US9230773B1 (en) * 2014-10-16 2016-01-05 Varian Semiconductor Equipment Associates, Inc. Ion beam uniformity control

Also Published As

Publication number Publication date
TWI734755B (zh) 2021-08-01
US10224181B2 (en) 2019-03-05
JP2019519064A (ja) 2019-07-04
KR20180127656A (ko) 2018-11-29
WO2017184736A1 (en) 2017-10-26
TW201802860A (zh) 2018-01-16
KR102268345B1 (ko) 2021-06-24
JP6944949B2 (ja) 2021-10-06
US20170309453A1 (en) 2017-10-26
CN109417012A (zh) 2019-03-01

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