TWI734755B - 處理設備及處理襯底的方法 - Google Patents

處理設備及處理襯底的方法 Download PDF

Info

Publication number
TWI734755B
TWI734755B TW106109286A TW106109286A TWI734755B TW I734755 B TWI734755 B TW I734755B TW 106109286 A TW106109286 A TW 106109286A TW 106109286 A TW106109286 A TW 106109286A TW I734755 B TWI734755 B TW I734755B
Authority
TW
Taiwan
Prior art keywords
extraction
plate
radio frequency
plasma
aperture
Prior art date
Application number
TW106109286A
Other languages
English (en)
Chinese (zh)
Other versions
TW201802860A (zh
Inventor
科斯特爾 拜洛
皮爾 盧比克
泰勒 洛克威爾
克里斯多夫 坎貝爾
維克拉姆 辛
凱文 M. 丹尼爾斯
理查德 J. 赫爾特
彼得 F. 庫魯尼西
亞歷山大 利坎斯奇
Original Assignee
美商瓦里安半導體設備公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商瓦里安半導體設備公司 filed Critical 美商瓦里安半導體設備公司
Publication of TW201802860A publication Critical patent/TW201802860A/zh
Application granted granted Critical
Publication of TWI734755B publication Critical patent/TWI734755B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW106109286A 2016-04-20 2017-03-21 處理設備及處理襯底的方法 TWI734755B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/133,261 US10224181B2 (en) 2016-04-20 2016-04-20 Radio frequency extraction system for charge neutralized ion beam
US15/133,261 2016-04-20

Publications (2)

Publication Number Publication Date
TW201802860A TW201802860A (zh) 2018-01-16
TWI734755B true TWI734755B (zh) 2021-08-01

Family

ID=60089727

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106109286A TWI734755B (zh) 2016-04-20 2017-03-21 處理設備及處理襯底的方法

Country Status (6)

Country Link
US (1) US10224181B2 (enExample)
JP (1) JP6944949B2 (enExample)
KR (1) KR102268345B1 (enExample)
CN (1) CN109417012B (enExample)
TW (1) TWI734755B (enExample)
WO (1) WO2017184736A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019182191A1 (ko) 2018-03-21 2019-09-26 경북대학교 산학협력단 C0x2 아세틸화제를 유효성분으로 포함하는 퇴행성 신경질환의 예방 또는 치료용 약학적 조성물
US11056319B2 (en) * 2019-07-29 2021-07-06 Applied Materials, Inc. Apparatus and system having extraction assembly for wide angle ion beam
KR102442204B1 (ko) 2019-09-20 2022-09-08 경북대학교 산학협력단 Cox2 단백질의 아세틸화 검출용 항체 및 이의 용도
CN113539773B (zh) * 2020-04-16 2024-07-02 新动力等离子体株式会社 具有双重输出的高频发生器及其驱动方法
US11495430B2 (en) 2020-07-15 2022-11-08 Applied Materials, Inc. Tunable extraction assembly for wide angle ion beam
US12400845B2 (en) * 2021-11-29 2025-08-26 Applied Materials, Inc. Ion energy control on electrodes in a plasma reactor
WO2023238235A1 (ja) * 2022-06-07 2023-12-14 株式会社日立ハイテク プラズマ処理装置
WO2024226135A1 (en) * 2023-04-24 2024-10-31 Applied Materials, Inc. A multi-electrode source assembly for plasma processing

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242368A (ja) * 2006-03-07 2007-09-20 Shincron:Kk ニュートラライザおよびこれを備えた成膜装置
US20080067430A1 (en) * 2006-06-28 2008-03-20 Noah Hershkowitz Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams
TW200922389A (en) * 2007-09-28 2009-05-16 Varian Semiconductor Equipment Charge neutralization in a plasma processing apparatus
US20100330300A1 (en) * 2008-01-30 2010-12-30 Stowell Michael W System and method for pre-ionization of surface wave launched plasma discharge sources
CN103094027A (zh) * 2011-10-31 2013-05-08 日新离子机器株式会社 引出电极系统及狭缝电极
TW201447954A (zh) * 2013-03-14 2014-12-16 Varian Semiconductor Equipment 離子源與處理基底的方法
US20150101634A1 (en) * 2013-10-10 2015-04-16 Varian Semiconductor Equipment Associates, Inc. Method Of Cleaning An Extraction Electrode Assembly Using Pulsed Biasing
TW201519275A (zh) * 2013-11-01 2015-05-16 Varian Semiconductor Equipment 用於對基底進行圖案化的系統與方法
US9230773B1 (en) * 2014-10-16 2016-01-05 Varian Semiconductor Equipment Associates, Inc. Ion beam uniformity control

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6478924B1 (en) * 2000-03-07 2002-11-12 Applied Materials, Inc. Plasma chamber support having dual electrodes
JP3912993B2 (ja) * 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
US20080132046A1 (en) * 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
JP5216918B2 (ja) * 2009-07-16 2013-06-19 キヤノンアネルバ株式会社 イオンビーム発生装置、基板処理装置及び電子デバイスの製造方法
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
FR3020235B1 (fr) 2014-04-17 2016-05-27 Ecole Polytech Dispositif de formation d'un faisceau quasi-neutre de particules de charges opposees.

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242368A (ja) * 2006-03-07 2007-09-20 Shincron:Kk ニュートラライザおよびこれを備えた成膜装置
US20080067430A1 (en) * 2006-06-28 2008-03-20 Noah Hershkowitz Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams
TW200922389A (en) * 2007-09-28 2009-05-16 Varian Semiconductor Equipment Charge neutralization in a plasma processing apparatus
US20100330300A1 (en) * 2008-01-30 2010-12-30 Stowell Michael W System and method for pre-ionization of surface wave launched plasma discharge sources
CN103094027A (zh) * 2011-10-31 2013-05-08 日新离子机器株式会社 引出电极系统及狭缝电极
TW201447954A (zh) * 2013-03-14 2014-12-16 Varian Semiconductor Equipment 離子源與處理基底的方法
US20150101634A1 (en) * 2013-10-10 2015-04-16 Varian Semiconductor Equipment Associates, Inc. Method Of Cleaning An Extraction Electrode Assembly Using Pulsed Biasing
TW201519275A (zh) * 2013-11-01 2015-05-16 Varian Semiconductor Equipment 用於對基底進行圖案化的系統與方法
US9230773B1 (en) * 2014-10-16 2016-01-05 Varian Semiconductor Equipment Associates, Inc. Ion beam uniformity control

Also Published As

Publication number Publication date
JP2019519064A (ja) 2019-07-04
US10224181B2 (en) 2019-03-05
WO2017184736A1 (en) 2017-10-26
US20170309453A1 (en) 2017-10-26
KR102268345B1 (ko) 2021-06-24
KR20180127656A (ko) 2018-11-29
CN109417012B (zh) 2021-07-09
CN109417012A (zh) 2019-03-01
TW201802860A (zh) 2018-01-16
JP6944949B2 (ja) 2021-10-06

Similar Documents

Publication Publication Date Title
TWI734755B (zh) 處理設備及處理襯底的方法
KR100855002B1 (ko) 플라즈마 이온 주입시스템
US20080132046A1 (en) Plasma Doping With Electronically Controllable Implant Angle
JP7330361B2 (ja) 広角イオンビームのための抽出アセンブリを備えた装置およびシステム
TW201532114A (zh) 控制提供基板的離子束的處理裝置與方法
US20170178866A1 (en) Apparatus and techniques for time modulated extraction of an ion beam
US10468226B1 (en) Extraction apparatus and system for high throughput ion beam processing
KR20210027221A (ko) 플라즈마 처리 장치 및 처리 방법
US20130287963A1 (en) Plasma Potential Modulated ION Implantation Apparatus
KR102868397B1 (ko) 높은 각도 추출 광학계를 포함하는 장치 및 시스템
KR102892702B1 (ko) 높은 각도 추출 광학부들을 포함하는 프로세싱 시스템 및 추출 어셈블리
CN115917697B (zh) 离子束处理系统及其阻断器和等离子板组合件的制造方法
US12261017B2 (en) Resonant antenna for physical vapor deposition applications
CN112534545B (zh) 用于等离子体加工的方法和装置
KR100633167B1 (ko) 기판처리장치와 기판처리방법
TW202501876A (zh) 天線總成、電漿源及處理裝置
CN112534545A (zh) 用于等离子体加工的方法和装置