JP6935055B2 - Ｏｌｅｄ表示装置、その回路、及びその製造方法 - Google Patents

Ｏｌｅｄ表示装置、その回路、及びその製造方法 Download PDF

Info

Publication number
JP6935055B2
JP6935055B2 JP2017141560A JP2017141560A JP6935055B2 JP 6935055 B2 JP6935055 B2 JP 6935055B2 JP 2017141560 A JP2017141560 A JP 2017141560A JP 2017141560 A JP2017141560 A JP 2017141560A JP 6935055 B2 JP6935055 B2 JP 6935055B2
Authority
JP
Japan
Prior art keywords
gate electrode
thin film
film transistor
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017141560A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019020677A (ja
JP2019020677A5 (cg-RX-API-DMAC7.html
Inventor
松枝　洋二郎
洋二郎 松枝
Original Assignee
天馬微電子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 天馬微電子有限公司 filed Critical 天馬微電子有限公司
Priority to JP2017141560A priority Critical patent/JP6935055B2/ja
Priority to CN201810613867.2A priority patent/CN109285861A/zh
Priority to US16/019,876 priority patent/US10685600B2/en
Publication of JP2019020677A publication Critical patent/JP2019020677A/ja
Publication of JP2019020677A5 publication Critical patent/JP2019020677A5/ja
Application granted granted Critical
Publication of JP6935055B2 publication Critical patent/JP6935055B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0243—Details of the generation of driving signals
    • G09G2310/0251—Precharge or discharge of pixel before applying new pixel voltage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP2017141560A 2017-07-21 2017-07-21 Ｏｌｅｄ表示装置、その回路、及びその製造方法 Active JP6935055B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017141560A JP6935055B2 (ja) 2017-07-21 2017-07-21 Ｏｌｅｄ表示装置、その回路、及びその製造方法
CN201810613867.2A CN109285861A (zh) 2017-07-21 2018-06-14 Oled显示装置及其制造方法、和oled显示装置中的电路
US16/019,876 US10685600B2 (en) 2017-07-21 2018-06-27 OLED display device, circuit therein, and method of manufacturing OLED display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017141560A JP6935055B2 (ja) 2017-07-21 2017-07-21 Ｏｌｅｄ表示装置、その回路、及びその製造方法

Publications (3)

Publication Number Publication Date
JP2019020677A JP2019020677A (ja) 2019-02-07
JP2019020677A5 JP2019020677A5 (cg-RX-API-DMAC7.html) 2020-08-20
JP6935055B2 true JP6935055B2 (ja) 2021-09-15

Family

ID=65023123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017141560A Active JP6935055B2 (ja) 2017-07-21 2017-07-21 Ｏｌｅｄ表示装置、その回路、及びその製造方法

Country Status (3)

Country Link
US (1) US10685600B2 (cg-RX-API-DMAC7.html)
JP (1) JP6935055B2 (cg-RX-API-DMAC7.html)
CN (1) CN109285861A (cg-RX-API-DMAC7.html)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019220684A (ja) * 2018-06-19 2019-12-26 シャープ株式会社 放射線検出器
KR102711314B1 (ko) 2018-06-28 2024-09-27 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102643466B1 (ko) * 2018-11-21 2024-03-05 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102783959B1 (ko) * 2019-03-22 2025-03-19 삼성디스플레이 주식회사 표시 장치
CN110137203B (zh) * 2019-05-06 2021-03-30 上海交通大学 像素传感结构、传感装置及像素传感结构的形成方法
JP6883874B2 (ja) * 2019-05-31 2021-06-09 エイテックス株式会社 面発光装置用プリント配線基板および面発光装置
CN209691755U (zh) * 2019-06-12 2019-11-26 京东方科技集团股份有限公司 阵列基板以及显示装置
KR102722773B1 (ko) * 2019-07-19 2024-10-25 엘지디스플레이 주식회사 발광 표시 장치
CN110707139B (zh) * 2019-11-07 2025-05-13 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
KR102787185B1 (ko) * 2019-11-12 2025-03-28 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
EP4067987A4 (en) * 2019-11-29 2022-11-30 BOE Technology Group Co., Ltd. MATRIX SUBSTRATE, METHOD OF MANUFACTURE THEREOF, DISPLAY DEVICE AND DISPLAY SUBSTRATE
CN111081721B (zh) * 2019-12-31 2022-06-03 厦门天马微电子有限公司 显示面板及显示装置
US12249278B2 (en) 2020-01-28 2025-03-11 OLEDWorks LLC Stacked OLED microdisplay with low-voltage silicon backplane
CN115053631B (zh) * 2020-02-07 2025-07-18 Jsr株式会社 显示器
WO2021217295A1 (zh) * 2020-04-26 2021-11-04 京东方科技集团股份有限公司 显示基板以及显示装置
KR102775088B1 (ko) * 2020-06-01 2025-03-05 삼성디스플레이 주식회사 표시장치
KR102766120B1 (ko) * 2020-06-05 2025-02-13 삼성디스플레이 주식회사 표시 장치
KR20210154301A (ko) * 2020-06-11 2021-12-21 삼성디스플레이 주식회사 표시장치
CN111599825B (zh) 2020-06-19 2022-07-29 京东方科技集团股份有限公司 显示基板、显示面板及显示基板的制作方法
JP2022000676A (ja) * 2020-06-19 2022-01-04 株式会社ジャパンディスプレイ 表示装置の製造方法
KR102663028B1 (ko) 2020-11-12 2024-05-07 엘지디스플레이 주식회사 표시패널과 이를 이용한 표시장치
CN112599540B (zh) * 2020-12-14 2022-07-12 武汉华星光电半导体显示技术有限公司 阵列基板及其制备方法、显示面板
KR20220140909A (ko) * 2021-04-09 2022-10-19 삼성디스플레이 주식회사 표시 장치
CN113436579B (zh) * 2021-05-13 2023-09-22 北京大学深圳研究生院 一种三维集成电路及其制造方法
US11968858B2 (en) * 2021-09-02 2024-04-23 Sharp Display Technology Corporation Display subpixels having multiple emissive areas with high aspect ratios
CN117037713A (zh) 2021-09-29 2023-11-10 京东方科技集团股份有限公司 像素驱动电路、显示面板
JP2025028678A (ja) * 2023-08-18 2025-03-03 株式会社ジャパンディスプレイ 表示装置及び表示システム

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4429576B2 (ja) * 2001-09-10 2010-03-10 株式会社半導体エネルギー研究所 半導体装置
JP5152448B2 (ja) * 2004-09-21 2013-02-27 カシオ計算機株式会社 画素駆動回路及び画像表示装置
TWI869133B (zh) * 2009-08-07 2025-01-01 日商半導體能源研究所股份有限公司 半導體裝置
JP2012063654A (ja) * 2010-09-17 2012-03-29 Casio Comput Co Ltd 発光パネル及び発光パネルの製造方法
US8847942B2 (en) * 2011-03-29 2014-09-30 Intrigue Technologies, Inc. Method and circuit for compensating pixel drift in active matrix displays
US9673267B2 (en) * 2013-03-26 2017-06-06 Lg Display Co., Ltd. Organic light emitting diode display device having a capacitor with stacked storage electrodes and method for manufacturing the same
KR102169014B1 (ko) * 2013-10-14 2020-10-23 삼성디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그 제조방법
US9653608B2 (en) * 2013-12-23 2017-05-16 Boe Technology Group Co., Ltd. Array substrate and manufacturing method thereof, display device and thin film transistor
CN103926776B (zh) * 2013-12-24 2017-03-15 厦门天马微电子有限公司 阵列基板、显示面板、显示装置及阵列基板的驱动方法
US9887253B2 (en) * 2014-01-27 2018-02-06 Japan Display Inc. Light emitting element display device
JP6330220B2 (ja) * 2014-03-27 2018-05-30 株式会社Ｊｏｌｅｄ 表示装置、電子機器および基板
KR102367274B1 (ko) * 2014-06-25 2022-02-25 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시패널과 그 제조방법
KR101640192B1 (ko) * 2014-08-05 2016-07-18 삼성디스플레이 주식회사 디스플레이 장치
WO2016034984A1 (en) * 2014-09-05 2016-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, driver ic, display device, and electronic device
KR102285384B1 (ko) * 2014-09-15 2021-08-04 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 그 제조방법 및 표시 장치
JP6566289B2 (ja) * 2014-11-26 2019-08-28 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 表示デバイス及び電気光学装置並びに電気機器並びにメタルマスク並びに画素アレイ
CN104932163B (zh) * 2015-07-03 2019-03-19 厦门天马微电子有限公司 阵列基板、显示面板和显示装置
KR102430575B1 (ko) 2015-08-26 2022-08-08 엘지디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
US10141387B2 (en) * 2016-04-08 2018-11-27 Innolux Corporation Display device
KR102570832B1 (ko) * 2016-05-23 2023-08-24 엘지디스플레이 주식회사 Oled 표시 장치 및 그의 구동 방법
US10763451B2 (en) * 2016-09-01 2020-09-01 Innolux Corporation Display device
KR20180045964A (ko) * 2016-10-26 2018-05-08 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102541552B1 (ko) * 2016-11-30 2023-06-07 엘지디스플레이 주식회사 트랜지스터 기판 및 이를 이용한 유기발광표시패널과 유기발광표시장치

Also Published As

Publication number Publication date
US20190027092A1 (en) 2019-01-24
JP2019020677A (ja) 2019-02-07
CN109285861A (zh) 2019-01-29
US10685600B2 (en) 2020-06-16

Similar Documents

Publication Publication Date Title
JP6935055B2 (ja) Ｏｌｅｄ表示装置、その回路、及びその製造方法
JP7011149B2 (ja) 表示装置及びその製造方法
US10671200B2 (en) Display device and method of manufacturing the same
US11245102B2 (en) Organic light-emitting diode display including a storage capacitive plate and a driving voltage line formed on the same layer and manufacturing method thereof
JP6892576B2 (ja) 表示装置
KR100700648B1 (ko) 전면발광 유기전계발광표시장치
US10700154B2 (en) Display device and method of manufacturing display device
CN102576722B (zh) El显示面板、el显示装置以及el显示面板的制造方法
US11563067B2 (en) Display device with improved aperture ratio and transmissivity
KR20030086166A (ko) 유기전계 발광소자와 그 제조방법
KR101600816B1 (ko) 유기 발광 표시 장치 및 그 제조 방법
CN103155019B (zh) 薄膜晶体管阵列装置、el显示面板、el显示装置、薄膜晶体管阵列装置的制造方法以及el显示面板的制造方法
KR102082366B1 (ko) 유기발광다이오드소자 및 이의 제조방법
TWI383344B (zh) 顯示單元及其製造方法
CN113053952A (zh) 显示装置及其制造方法
JP4108674B2 (ja) 有機電界発光素子とその製造方法
US8426863B2 (en) Thin film transistor; method of manufacturing same; and organic light emitting device including the thin film transistor
JP7499089B2 (ja) 表示装置
WO2021064954A1 (ja) 表示装置
KR20160060835A (ko) 유기발광다이오드 표시장치 및 그 제조방법
JP2020004867A (ja) 表示装置
KR20120061541A (ko) 유기전계 발광소자
JP2020003670A (ja) 表示装置
KR20100065687A (ko) 듀얼플레이트 방식의 유기전계 발광소자 및 그 제조방법
KR20050081266A (ko) 유기 발광 표시판

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20191025

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20191224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200625

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200625

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210408

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210420

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210629

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210713

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210729

R150 Certificate of patent or registration of utility model

Ref document number: 6935055

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250