JP6929677B2 - 発光素子、発光装置、電子機器および照明装置 - Google Patents
発光素子、発光装置、電子機器および照明装置 Download PDFInfo
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- JP6929677B2 JP6929677B2 JP2017059801A JP2017059801A JP6929677B2 JP 6929677 B2 JP6929677 B2 JP 6929677B2 JP 2017059801 A JP2017059801 A JP 2017059801A JP 2017059801 A JP2017059801 A JP 2017059801A JP 6929677 B2 JP6929677 B2 JP 6929677B2
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- 125000002524 organometallic group Chemical group 0.000 claims description 152
- 239000003446 ligand Substances 0.000 claims description 135
- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 50
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- 239000002184 metal Substances 0.000 claims description 36
- 125000003118 aryl group Chemical group 0.000 claims description 32
- 125000001072 heteroaryl group Chemical group 0.000 claims description 32
- 125000000217 alkyl group Chemical group 0.000 claims description 15
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- 239000001257 hydrogen Substances 0.000 claims description 11
- 125000005843 halogen group Chemical group 0.000 claims description 10
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 10
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- 238000000034 method Methods 0.000 description 84
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System compounds of the platinum group
- C07F15/0033—Iridium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
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Description
(一般式(G1)中、R1〜R15は、それぞれ独立に、水素、ハロゲン基、置換もしくは無置換の炭素数1〜6のアルキル基、置換もしくは無置換の炭素数6〜13のアリール基、置換もしくは無置換の炭素数3〜12のヘテロアリール基のいずれかを表す。)
(一般式(G2)中、nは、1または2である。R1〜R15は、それぞれ独立に、水素、ハロゲン基、置換もしくは無置換の炭素数1〜6のアルキル基、置換もしくは無置換の炭素数6〜13のアリール基、置換もしくは無置換の炭素数3〜12のヘテロアリール基のいずれかを表す。)
本実施の形態では、本発明の一態様である発光素子について図1を用いて説明する。
本発明の一態様であり、上記一般式(G1)で表される有機金属錯体は、以下の合成スキーム(A)に示すように、ハロゲンで架橋された構造を有する複核錯体(P1)と、一般式(G0−a)で表されるピリジン化合物とを、不活性ガス雰囲気にて反応させることにより得ることができる。
本発明の一態様であり、上記一般式(G2−a)で表される有機金属錯体は、下記合成スキーム(B)に示すように、ハロゲンで架橋された構造を有する複核錯体(P2)と、一般式(G0−a)で表されるピリジン化合物とを、不活性ガス雰囲気にて反応させることにより、得ることができる。
本発明の一態様であり、上記一般式(G2−a)で表される有機金属錯体は、下記合成スキーム(C)に示すように、ハロゲンで架橋された構造を有する複核錯体(P3)と、一般式(G0−b)で表されるトリアジン化合物とを、不活性ガス雰囲気にて反応させることにより、得ることができる。
本実施の形態では、実施の形態1で説明した本発明の一態様である発光素子について、より詳細に説明する。なお、実施の形態1と同様に図1を用いて説明する。
本実施の形態では、本発明の一態様であり、EL層を複数有する構造の発光素子(以下、タンデム型発光素子という)について説明する。
本実施の形態では、本発明の一態様である発光装置について説明する。
本実施の形態では、本発明の一態様である発光装置を適用して完成させた様々な電子機器や自動車の一例について、説明する。
本実施の形態では、本発明の一態様である発光素子を適用して作製される照明装置の構成について図8を用いて説明する。
本実施の形態では、本発明の一態様である発光装置を適用した応用品である照明装置の一例について、図9を用いて説明する。
本実施の形態においては、本発明の一態様の発光素子または本発明の一態様の発光装置を有するタッチパネルについて、図10〜図14を用いて説明を行う。
本実施の形態においては、本発明の一態様の発光素子を有する表示装置として、反射型の液晶素子と、発光素子と、を有し、透過モードと反射モードの両方の表示を行うことのできる表示装置について、図15〜図17を用いて説明する。なお、このような表示装置は、ER−hybrid display(Emissive OLED and Reflective LC Hybrid display)とも呼ぶことができる。
本実施の形態では、本発明の一態様である発光素子について説明する。なお、本実施の形態で説明する発光素子は、実施の形態2で説明した発光素子と異なる構成を有する。従って、発光素子の素子構造およびその作製方法について図18(A)(B)を用いて説明する。但し、実施の形態2で説明した発光素子と共通する部分については、実施の形態2の説明を参照することとして、説明を省略する。
本実施例では、実施の形態1の構造式(100)で表される本発明の一態様である有機金属錯体、ビス{2−[6−(1,1−ジメチルエチル)−4−ピリミジニル−κN3]フェニル−κC}[2−(2−ピリジニル−κN)フェニル−κC]イリジウム(III)(略称:[Ir(tBuppm)2(ppy)])の合成方法について説明する。なお、[Ir(tBuppm)2(ppy)]の構造を以下に示す。
本実施例では、実施の形態1の構造式(102)で表される本発明の一態様である有機金属錯体、ビス{2−[6−(1,1−ジメチルエチル)−4−ピリミジニル−κN3]フェニル−κC}[2−(4−メチル−5−フェニル−2−ピリジニル−κN)フェニル−κC]イリジウム(III)(略称:[Ir(tBuppm)2(mdppy)])の合成方法について説明する。なお、[Ir(tBuppm)2(mdppy)]の構造を以下に示す。
本実施例では、実施の形態1の構造式(114)で表される本発明の一態様である有機金属錯体、[2−(4,5−ジメチル−2−ピリジニル−κN)フェニル−κC]ビス[2−(6−フェニル−4−ピリミジニル−κN3)フェニル−κC]イリジウム(III)(略称:[Ir(dppm)2(dmppy)])の合成方法について説明する。なお、[Ir(dppm)2(dmppy)]の構造を以下に示す。
2,5−ジブロモ−4−メチル−2−フェニルピリジン15g(60mmol)、フェニルボロン酸7.3g(60mmol)、炭酸カリウム3.0g(22mmol)、トルエン380mL、水38mLを1000mL三口フラスコに加え、フラスコ内を窒素置換した後、フラスコ内を減圧しながら撹拌し、脱気した。脱気後、フラスコ内を窒素置換し、テトラキス(トリフェニルホスフィン)パラジウム(0)3.5g(3.0mmol)を加え、窒素気流下、110℃で16時間撹拌した。
ステップ1で合成した5−ブロモ−4−メチル−2−フェニルピリジン6.2g(25mmol)、トリメチルボロキシン5.2g(41mmol)、2−ジシクロヘキシルホスフィノ−2’,6’−ジメトキシビフェニル(S−phos)1.0g(2.5mmol)、リン酸三カリウム8.0g(38mmol)、トルエン180mL、水18mLを500mL三口フラスコに加え、フラスコ内を窒素置換した後、フラスコ内を減圧しながら撹拌し、脱気した。脱気後、フラスコ内を窒素置換し、トリス(ジベンジリデンアセトン)ジパラジウム(0)0.46g(0.5mmol)を加え、窒素気流下、110℃で23時間撹拌した。得られた反応溶液に水を加えてトルエンで抽出した。有機層を飽和食塩水で洗浄した後、無水硫酸マグネシウムを加えて乾燥させた。得られた混合物を自然ろ過し、ろ液を濃縮して油状物を得た。
ジ−μ−クロロ−テトラキス[2−(6−フェニル−4−ピリミジニル−κN3)フェニル−κC]ジイリジウム(III)(略称:[Ir(dppm)2Cl]2)2.1g(1.5mmol)、ジクロロメタン300mLを、1000mL三口フラスコに入れ、窒素気流下で撹拌した。この混合溶液にトリフルオロメタンスルホン酸銀1.2g(4.5mmol)とメタノール150mLの混合溶液を滴下し、暗所下で16時間撹拌した。所定時間反応後、反応混合物をセライトに通し、ろ過した。
本実施例では、実施の形態1の構造式(120)で表される本発明の一態様である有機金属錯体、{2−[6−(1,1−ジメチルエチル)−4−ピリミジニル−κN3]フェニル−κC}ビス[2−(4−メチル−5−フェニル−2−ピリジニル−κN)フェニル−κC]イリジウム(III)(略称:[Ir(tBuppm)(mdppy)2])の合成方法について説明する。なお、[Ir(tBuppm)(mdppy)2]の構造を以下に示す。
まず、4−メチル−2,5−ジフェニルピリジン(略称:Hmdppy)3.0g、塩化イリジウム(III)水和物1.8g、2−エトキシエタノール30mL、水10mLを、還流管を付けた丸底フラスコに入れ、アルゴンバブリングをしながらマイクロ波(2.45GHz、100W)を2時間照射した。得られた混合物をろ過し、メタノールとヘキサンにて洗浄することにより、目的物を2.9g(収率65%、暗黄色固体)得た。また、ステップ1の合成スキームを下記(d−1)に示す。
次に、[Ir(mdppy)2Cl]2 2.9gとジクロロメタン430mLを三口フラスコに入れフラスコ内を窒素置換した。ここに、銀トリフラート1.0gと2−プロパノール53mLの混合液を滴下し、室温にて18時間攪拌した。得られた混合物を、セライトを通した後、濃縮し、固体を得た。この固体にHtBuppm(略称)2.3g、エタノール40mLを加え、窒素雰囲気下18時間還流させた。得られた混合物をろ過し、ろ物を酢酸エチル:ヘキサン=1:5から徐々にヘキサンの割合を減らして最終的に酢酸エチル:ヘキサン=1:2を展開溶媒としたシリカカラムクロマトグライフィーにて精製した。さらにジクロロメタン:ヘキサン=1:2を展開溶媒としたフラッシュカラムクロマトグラフィーにて精製した。得られた溶液を濃縮し、ジクロロメタンとヘキサンの混合溶媒にて再結晶することにより、有機金属錯体、[Ir(tBuppm)(mdppy)2]を橙色固体として得た(収率:29%)。
まず、ガラス製の基板900上に酸化珪素を含むインジウム錫酸化物(ITO)をスパッタリング法により成膜し、陽極として機能する第1の電極901を形成した。なお、その膜厚は110nmとし、電極面積は2mm×2mmとした。
作製した各発光素子の動作特性について測定した。なお、測定は室温(25℃に保たれた雰囲気)で行った。
まず、ガラス製の基板900上に酸化珪素を含むインジウム錫酸化物(ITO)をスパッタリング法により成膜し、陽極として機能する第1の電極901を形成した。なお、その膜厚は70nmとし、電極面積は2mm×2mmとした。
作製した発光素子5の動作特性について測定した。なお、測定は室温(25℃に保たれた雰囲気)で行った。
本実施例では、実施の形態1の構造式(117)で表される本発明の一態様である有機金属錯体、ビス{2−[6−(1,1−ジメチルエチル)−4−ピリミジニル−κN3]フェニル−κC}[2−(4−フェニル−2−ピリジニル−κN)フェニル−κC]イリジウム(III)(略称:[Ir(tBuppm)2(4dppy)])の合成方法について説明する。なお、[Ir(tBuppm)2(4dppy)]の構造を以下に示す。
本実施例では、実施の形態1の構造式(200)で表される本発明の一態様である有機金属錯体、ビス{2−[4−フェニル−2−(1,3,5−トリアジニル)−κN]フェニル−κC}[2−(2−ピリジニル−κN)フェニル−κC]イリジウム(III)(略称:[Ir(dptzn)2(ppy)])の合成方法について説明する。なお、[Ir(dptzn)2(ppy)]の構造を以下に示す。
まず、ジ−μ−クロロ−テトラキス[2−(2−ピリジニル−κN)フェニル−κC]ジイリジウム(III)(略称:[Ir(ppy)2Cl]2)2.5g(2.3mmol)、ジクロロメタン400mLを、1000mL三口フラスコに入れ、窒素気流下で撹拌した。
本実施例では、実施の形態1の構造式(300)で表される本発明の一態様である有機金属錯体、{2−[4−フェニル−2−(1,3,5−トリアジニル)−κN]フェニル−κC}ビス[2−(2−ピリジニル−κN)フェニル−κC]イリジウム(III)(略称:[Ir(ppy)2(dptzn)])の合成方法について説明する。なお、[Ir(ppy)2(dptzn)]の構造を以下に示す。
まず、ジ−μ−クロロ−テトラキス[2−(2−ピリジニル−κN)フェニル−κC]ジイリジウム(III)(略称:[Ir(ppy)2Cl]2)2.5g(2.3mmol)、ジクロロメタン400mLを、1000mL三口フラスコに入れ、窒素気流下で撹拌した。この混合溶液にトリフルオロメタンスルホン酸銀1.8g(6.9mmol)とメタノール120mLの混合溶液を滴下し、暗所下で17時間撹拌した。
本実施例では、実施の形態1の構造式(118)で表される有機金属錯体、ビス[2−(4,5−ジメチル−2−ピリジニル−κN)フェニル−κC][2−(6−フェニル−4−ピリミジニル−κN3)フェニル−κC]イリジウム(III)(略称:[Ir(dppm)(dmppy)2])の合成方法について説明する。なお、[Ir(dppm)(dmppy)2]の構造を以下に示す。
まず、2,5−ジブロモ−4−メチル−2−フェニルピリジン15g(60mmol)、フェニルボロン酸7.3g(60mmol)、炭酸カリウム3.0g(22mmol)、トルエン380mL、水38mLを1000mL三口フラスコに加え、フラスコ内を窒素置換した後、フラスコ内を減圧しながら撹拌し、脱気した。脱気後、フラスコ内を窒素置換し、テトラキス(トリフェニルホスフィン)パラジウム(0)3.5g(3.0mmol)を加え、窒素気流下、110℃で16時間撹拌した。
次に、ステップ1で合成した5−ブロモ−4−メチル−2−フェニルピリジン6.2g(25mmol)、トリメチルボロキシン5.2g(41mmol)、2−ジシクロヘキシルホスフィノ−2’,6’−ジメトキシビフェニル(S−phos)1.0g(2.5mmol)、リン酸三カリウム8.0g(38mmol)、トルエン180mL、水18mLを500mL三口フラスコに加え、フラスコ内を窒素置換した後、フラスコ内を減圧しながら撹拌し、脱気した。脱気後、フラスコ内を窒素置換し、トリス(ジベンジリデンアセトン)ジパラジウム(0)0.46g(0.5mmol)を加え、窒素気流下、110℃で23時間撹拌した。
次に、ジ−μ−クロロ−テトラキス[2−(6−フェニル−4−ピリミジニル−κN3)フェニル−κC]ジイリジウム(III)(略称:[Ir(dppm)2Cl]2)2.1g(1.5mmol)、ジクロロメタン300mLを、1000mL三口フラスコに入れ、窒素気流下で撹拌した。この混合溶液にトリフルオロメタンスルホン酸銀1.2g(4.5mmol)とメタノール150mLの混合溶液を滴下し、暗所下で16時間撹拌した。
本実施例では、実施の形態1の構造式(119)で表される有機金属錯体、{2−[6−(1,1−ジメチルエチル)−4−ピリミジニル−κN3]フェニル−κC}ビス[2−(4−フェニル−2−ピリジニル−κN)フェニル−κC]イリジウム(III)(略称:[Ir(tBuppm)(4dppy)2])の合成方法について説明する。なお、[Ir(tBuppm)(4dppy)2]の構造を以下に示す。
本実施例で作製した発光素子6および発光素子7の素子構造を表6に示す。
次に、作製した各発光素子の動作特性について測定した。なお、測定は室温(25℃に保たれた雰囲気)で行った。
本実施例で作製した発光素子8および発光素子9の素子構造を表8に示す。
次に、作製した各発光素子の動作特性について測定した。なお、測定は室温(25℃に保たれた雰囲気)で行った。
102 EL層
103 第2の電極
111 正孔注入層
112 正孔輸送層
113 発光層
114 電子輸送層
115 電子注入層
201 第1の電極
202(1) 第1のEL層
202(2) 第2のEL層
202(n−1) 第(n−1)のEL層
202(n) 第(n)のEL層
204 第2の電極
205 電荷発生層
205(1) 第1の電荷発生層
205(2) 第2の電荷発生層
205(n−2) 第(n−2)の電荷発生層
205(n−1) 第(n−1)の電荷発生層
301 素子基板
302 画素部
303 駆動回路部(ソース線駆動回路)
304a、304b 駆動回路部(ゲート線駆動回路)
305 シール材
306 封止基板
307 配線
308 FPC(フレキシブルプリントサーキット)
309 FET
310 FET
312 電流制御用FET
313a、313b 第1の電極(陽極)
314 絶縁物
315 EL層
316 第2の電極(陰極)
317a、317b 発光素子
318 空間
320a、320b 導電膜
321、322 領域
323 引き回し配線
324 有色層(カラーフィルタ)
325 黒色層(ブラックマトリクス)
326、327、328 FET
401 基板
402 第1の電極
403a、403b、403c EL層
404 第2の電極
405 発光素子
406 絶縁膜
407 隔壁
900 基板
901 第1の電極
902 EL層
903 第2の電極
911 正孔注入層
912 正孔輸送層
913 発光層
914 電子輸送層
915 電子注入層
2000 タッチパネル
2000’ タッチパネル
2501 表示パネル
2502R 画素
2502t トランジスタ
2503c 容量素子
2503g 走査線駆動回路
2503t トランジスタ
2509 FPC
2510 基板
2511 配線
2519 端子
2521 絶縁層
2528 絶縁体
2550R 発光素子
2560 封止層
2567BM 遮光層
2567p 反射防止層
2567R 着色層
2570 基板
2590 基板
2591 電極
2592 電極
2593 絶縁層
2594 配線
2595 タッチセンサ
2597 接着層
2598 配線
2599 端子
2601 パルス電圧出力回路
2602 電流検出回路
2603 容量
2611 トランジスタ
2612 トランジスタ
2613 トランジスタ
2621 電極
2622 電極
3200 基板
3201 陰極
3202 EL層
3203 陽極
3213 発光層
3214 電子注入層
3215 正孔輸送層
3216 正孔注入層
3217 絶縁物
3300 ヘッド部
3301a 噴射部
3301c 噴射部
3302a 圧電素子
3302c 圧電素子
3303a インク
3303c インク
4000 照明装置
4001 基板
4002 発光素子
4003 基板
4004 電極
4005 EL層
4006 電極
4007 電極
4008 電極
4009 補助配線
4010 絶縁層
4011 封止基板
4012 シール材
4013 乾燥剤
4015 拡散板
4100 照明装置
4200 照明装置
4201 基板
4202 発光素子
4204 電極
4205 EL層
4206 電極
4207 電極
4208 電極
4209 補助配線
4210 絶縁層
4211 封止基板
4212 シール材
4213 バリア膜
4214 平坦化膜
4215 拡散板
4300 照明装置
5101 ライト
5102 ホイール
5103 ドア
5104 表示部
5105 ハンドル
5106 シフトレバー
5107 座席シート
5108 インナーリアビューミラー
7100 テレビジョン装置
7101 筐体
7103 表示部
7105 スタンド
7107 表示部
7109 操作キー
7110 リモコン操作機
7201 本体
7202 筐体
7203 表示部
7204 キーボード
7205 外部接続ポート
7206 ポインティングデバイス
7302 筐体
7304 表示部
7305 時刻を表すアイコン
7306 その他のアイコン
7311 操作ボタン
7312 操作ボタン
7313 接続端子
7321 バンド
7322 留め金
7400 携帯電話機
7401 筐体
7402 表示部
7403 操作用ボタン
7404 外部接続部
7405 スピーカ
7406 マイク
7407 カメラ
7500(1)、7500(2) 筐体
7501(1)、7501(2) 第1面
7502(1)、7502(2) 第2面
8001 照明装置
8002 照明装置
8003 照明装置
9310 携帯情報端末
9311 表示部
9312 表示領域
9313 ヒンジ
9315 筐体
Claims (6)
- 一対の電極間にEL層を有し、
前記EL層は、発光層を少なくとも有し、
前記発光層は、有機金属錯体を有し、
前記有機金属錯体は、中心金属に配位する第1の配位子および第2の配位子を有し、
前記第1の配位子にはHOMOが分布し、前記第2の配位子にはLUMOが分布し、
前記第1の配位子及び前記第2の配位子は、シクロメタル化配位子であり、
前記有機金属錯体は、式(G1)で表される構造を有する発光素子。
(式(G1)中、R 1 〜R 15 は、それぞれ独立に、水素、ハロゲン基、置換もしくは無置換の炭素数1〜6のアルキル基、置換もしくは無置換の炭素数6〜13のアリール基、置換もしくは無置換の炭素数3〜12のヘテロアリール基のいずれかを表す。) - 一対の電極間にEL層を有し、
前記EL層は、発光層を少なくとも有し、
前記発光層は、有機金属錯体を有し、
前記有機金属錯体は、中心金属に配位する第1の配位子および第2の配位子を有し、
前記第1の配位子にはHOMOが分布し、前記第2の配位子にはLUMOが分布し、
前記第1の配位子及び前記第2の配位子は、シクロメタル化配位子であり、
前記有機金属錯体は、式(G2)で表される構造を有する発光素子。
(式(G2)中、nは、1または2である。R 1 〜R 15 は、それぞれ独立に、水素、ハロゲン基、置換もしくは無置換の炭素数1〜6のアルキル基、置換もしくは無置換の炭素数6〜13のアリール基、置換もしくは無置換の炭素数3〜12のヘテロアリール基のいずれかを表す。) - 請求項1または2に記載の発光素子と、
トランジスタまたは基板と、
を有する発光装置。 - 請求項3に記載の発光装置と、
マイク、カメラ、操作用ボタン、外部接続部、または、スピーカのいずれかと、
を有する電子機器。 - 請求項3に記載の発光装置と、
筐体またはタッチセンサのいずれかと、
を有する電子機器。 - 請求項1または2に記載の発光素子と、
トランジスタまたは基板のいずれかと、
を有する照明装置。
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US9299942B2 (en) * | 2012-03-30 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device |
JP6861551B2 (ja) | 2016-04-01 | 2021-04-21 | 株式会社半導体エネルギー研究所 | 有機金属錯体、発光素子、発光装置、電子機器、および照明装置 |
US10741769B2 (en) | 2016-10-14 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Organic compound, light-emitting element, light-emitting device, electronic device, and lighting device |
CN106916190A (zh) * | 2017-03-03 | 2017-07-04 | 安徽益瑞德新材料科技有限公司 | 铱配合物、其制备方法、应用及有机电致发光器件 |
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