JP6928328B2 - Processing method and processing equipment - Google Patents

Description

The present invention relates to a processing method and a processing apparatus. More specifically, the present invention relates to a processing method and a processing apparatus capable of realizing highly efficient and highly accurate processing with a simple structure by dry polishing for processing diamond or the like.

Diamond has a wide bandgap of 5.4 eV, has a large thermal conductivity, and is excellent in dielectric breakdown electric field and charge mobility, and is therefore regarded as a promising material for next-generation power semiconductor devices.

In order to manufacture a semiconductor device using diamond, it is said that a processing technique for finishing the surface of the diamond substrate, which is the base of the device, at the atomic level and without disturbance is indispensable. However, since diamond has high hardness and is chemically stable, it is extremely difficult to process it, and the development of processing technology has become a technical issue.

For example, as a conventional processing method, processing in which chemical removal is performed by polishing using abrasive grains such as chemical mechanical polishing is known. However, there is a problem that the removal speed is slow and the processing efficiency is insufficient because the chemical reaction in the abrasive is used.

Here, there is a processing method in an atmospheric environment in which an attempt is made to improve the processing efficiency without using abrasive grains for polishing in the solution environment described above.

For example, the polishing surface plate is brought into contact with the surface to be polished of a substrate made of diamond at high pressure, and the substrate is rubbed relative to the polishing surface plate while irradiating the polishing surface of the substrate with ultraviolet rays from the back surface of the polishing surface plate. A technique for polishing by moving has been proposed (see, for example, Patent Document 1).

In addition, the inventor of the present application irradiates a polishing surface plate made of a metal oxide with ultraviolet light or plasma to remove chemical contamination (organic contaminants) on the surface plate surface and the surface plate surface. Has been proposed as a processing method for hydrophilizing (exposing an OH group on the outermost surface portion) (see, for example, Patent Document 2).

In the method described in Patent Document 2, the surface plate surface is made hydrophilic to increase the reaction sites with the atoms on the surface of the workpiece, and the atoms on the surface of the workpiece are chemically reacted to perform the processing. be.

International Publication No. 2007/007683 International Publication No. 2014/034921

However, in the processing methods described in Patent Document 1 and Patent Document 2, although processing is performed by irradiation with ultraviolet rays, ultraviolet light is unstable in the atmosphere and the energy possessed is lost instantaneously. It was difficult to uniformly irradiate the processed member. Therefore, it has been difficult to stably realize high processing accuracy.

Further, in the processing described in Patent Document 1 and Patent Document 2, there are restrictions on the installation location of the ultraviolet light source due to the configuration of the processing apparatus that relatively displaces the surface plate and the holding portion of the workpiece. That is, the existing processing apparatus cannot be used as it is, and it is necessary to manufacture a specially-designed processing apparatus for providing an ultraviolet light source.

Further, in dry polishing, triboelectric charging occurs when the processed member and the workpiece are brought into contact with each other and relatively displaced. Due to triboelectric charging, the charged state of the surfaces of the processed member and the workpiece becomes unstable, and there is a problem that the surface roughness and processing efficiency after processing cannot be controlled with high accuracy.

The present invention has been devised in view of the above points, and provides a processing method and a processing apparatus capable of realizing highly efficient and highly accurate processing with a simple structure by dry polishing for processing diamond or the like. It is intended to be provided.

[About processing method]
In order to achieve the above object, in the processing method of the present invention, a processed member composed of a metal oxide is brought into contact with a work piece, ozone gas is supplied to the contact portion, and the processed member is brought into contact with the work piece. It is provided with a step of displacement in a state of being in contact with.

Here, the contact portion can be placed in an ozone gas environment by bringing the processed member into contact with the workpiece and supplying ozone gas to the contact portion. That is, although ozone gas is an unstable molecule, by supplying ozone gas to the contact site, it becomes possible to localize the ozone gas in the same region.

Further, it is possible to generate frictional heat at the contact portion by the step of displace the processed member in a state of being in contact with the workpiece. This frictional heat thermally decomposes the supplied ozone gas and generates atomic oxygen from the ozone gas. The generated atomic oxygen is a bond such as a carboxyl group to a hydroxyl group (OH group) on the outermost surface of a processed member that is responsible for a chemical reaction (processing) with a work piece in an atmospheric environment, that is, contamination derived from an organic substance. Suppress the nation. Atomic oxygen decomposes and purifies organic matter-derived stains, and hydrophilizes the surface of the processed member to expose hydroxyl groups (OH groups), enabling stable physical and chemical processing of the workpiece. It will be possible.

Further, as described above, since the contact portion is in an ozone gas environment, it is possible to secure atomic oxygen required for stable processing.

In the present invention, the surface of the processed member is cleaned and hydrophilic by utilizing atomic oxygen generated by thermal decomposition of ozone gas at the contact site between the processed member and the workpiece, that is, at the position where the workpiece is processed. The chemical treatment is performed to realize physically and chemically stable processing of the work piece.

Further, the processed member is any one of sapphire, corundum, sapphire glass, sapphire crystal, polycrystalline alumina, alumina ceramics, _{and glass containing SiO 2} as a main component, which are _{composed of Al 2} O _3. When the workpiece is made of any one of diamond, polycrystalline diamond, CVD diamond, and DLC film, the workpiece can be processed in a sufficiently stable manner.

Further, when the processed member is _{made of glass containing SiO 2} as a main component and the workpiece is made of SiC, sufficiently stable processing with respect to SiC is possible.

Further, when at least one of the processed member or the workpiece is humidified, more stable processing becomes possible, the accuracy of the surface roughness can be further improved, and the processing efficiency can be improved.

Further, when the ozone gas contains an alkaline solution, the tribochemical reaction generated on the friction surface between the processed member and the workpiece can be promoted to generate an oxide on the processed surface of the workpiece, which can be preferentially removed. It becomes a thing. As a result, in addition to the processing using atomic oxygen generated by the thermal decomposition of ozone gas, the processing by the tribochemical reaction is promoted, the accuracy of the surface roughness can be further improved, and the processing efficiency can be improved. The alkaline solution referred to here is, for example, a solution showing alkalinity such as alkaline electrolyzed water, NaOH, and KOH.

Further, when the alkaline solution is alkaline electrolyzed water, it is possible to promote the tribochemical reaction with ozone gas containing the alkaline electrolyzed water. In addition, alkaline electrolyzed water is highly safe to handle and can be generated relatively easily, so that the processing method can be made safer and simpler. The alkaline electrolyzed water referred to here means alkaline water having a pH of 9.0 or more.

Further, when the charge amount is controlled by supplying at least one of cations or anions to at least one of the processed member or the workpiece, the charged state of the surface of the processed member and the workpiece is adjusted. Stabilize.
Then, the charged state of the surface of the processed member and the workpiece is controlled and then the workpiece is relatively displaced in contact with the workpiece whose surface is stabilized. The surface can be processed physically and chemically.

_{Further, when N 2} gas is supplied to the contact portion between the processed member and the workpiece to control the charge amount, it becomes easier to control the charged state of the surface of the processed member and the workpiece, and the surface roughness is roughened. It is possible to further improve the accuracy of the surface and further improve the processing efficiency.

In the present invention, the surface of the processed member is cleaned and hydrophilic by utilizing atomic oxygen generated by thermal decomposition of ozone at the contact site between the processed member and the workpiece, that is, at the position where the workpiece is processed. The chemical treatment is performed to realize physically and chemically stable processing of the work piece. Therefore, abrasive grain-free polishing can be realized. Further, since it is only necessary to install a device that supplies ozone to the contact portion between the processing member of the existing processing device and the workpiece, the processing system can be easily constructed.

The "processed member" includes, for example, metals such as iron, nickel, and Co, SiO ₂ , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, and K ₂ O. , _{Metal oxides such as CeO 2} , ceramics such as SiC, SiC, Al ₂ O ₃ , and processed members made of constituent materials thereof. Furthermore, as the workpiece, diamond, polycrystalline diamond, CVD diamond, diamond-related material DLC film, or the like, SiC, GaN, sapphire, SiC ceramics, _Si 3 _{N 4} ceramics, AIN, hard and brittle materials such as glass Can be mentioned.

Further, in order to achieve the above object, in the processing method of the present invention, a processed member made of a metal oxide is brought into contact with an object to be processed, ozone gas is supplied to the contact portion, and the processed member is brought into contact with the object. The processed member is made of either alumina ceramics or _{glass containing SiO 2} as a main component, and the workpiece is made of GaN. It is configured.

Here, the contact portion can be placed in an ozone gas environment by bringing the processed member into contact with the workpiece and supplying ozone gas to the contact portion. That is, although ozone gas is an unstable molecule, by supplying ozone gas to the contact site, it becomes possible to localize the ozone gas in the same region.

Further, it is possible to generate frictional heat at the contact portion by the step of displace the processed member in a state of being in contact with the workpiece. This frictional heat thermally decomposes the supplied ozone gas and generates atomic oxygen from the ozone gas. The generated atomic oxygen is a bond such as a carboxyl group to a hydroxyl group (OH group) on the outermost surface of a processed member that is responsible for a chemical reaction (processing) with a work piece in an atmospheric environment, that is, contamination derived from an organic substance. Suppress the nation. Atomic oxygen decomposes and purifies organic matter-derived stains, and hydrophilizes the surface of the processed member to expose hydroxyl groups (OH groups), enabling stable physical and chemical processing of the workpiece. It will be possible.

Further, as described above, since the contact portion is in an ozone gas environment, it is possible to secure atomic oxygen required for stable processing.

In the present invention, the surface of the processed member is cleaned and hydrophilic by utilizing atomic oxygen generated by thermal decomposition of ozone gas at the contact site between the processed member and the workpiece, that is, at the position where the workpiece is processed. The chemical treatment is performed to realize physically and chemically stable processing of the work piece.

Further, since the processing member is made of either alumina ceramics or _{glass containing SiO 2} as a main component and the workpiece is composed of GaN, sufficiently stable processing with respect to GaN becomes possible. ..

Further, when the ozone gas contains alkaline electrolyzed water, the tribochemical reaction generated on the friction surface between the processed member and the workpiece is promoted to generate an oxide on the processed surface of the workpiece, which is preferentially removed. It will be possible. As a result, in addition to the processing using atomic oxygen generated by the thermal decomposition of ozone gas, the processing by the tribochemical reaction is promoted, the accuracy of the surface roughness can be further improved, and the processing efficiency can be improved. The alkaline solution referred to here is, for example, a solution showing alkalinity such as alkaline electrolyzed water, NaOH, and KOH.

Further, it becomes possible to promote the tribochemical reaction with ozone gas containing alkaline electrolyzed water. By the tribochemical reaction, the reaction represented by the following reaction formula occurs, and it is possible to perform processing with high accuracy and high processing efficiency with respect to GaN.
2GaN + 3H ₂ O ⇔ Ga _{2 O 3} + _{2NH 3}
In addition, alkaline electrolyzed water is highly safe to handle and can be generated relatively easily, so that the processing method can be made safer and simpler. The alkaline electrolyzed water referred to here means alkaline water having a pH of 9.0 or more.

[About processing equipment]
Further, in order to achieve the above object, the processing apparatus according to the present invention includes a processing member made of a metal oxide, a holding mechanism for holding a predetermined workpiece in contact with the processing member, and the processing member. It also includes an ozone gas supply unit that supplies ozone gas to a contact portion with the work piece, and a drive unit that displaces the work piece in a state where the work member and the work piece are in contact with each other.

Here, the contact portion is placed in an ozone gas environment by a holding mechanism that holds a predetermined workpiece in contact with the workpiece and an ozone gas supply unit that supplies ozone gas to the contact portion between the workpiece and the workpiece. Can be done. That is, although ozone gas is an unstable molecule, by supplying ozone gas to the contact site, it becomes possible to localize the ozone gas in the same region.

Further, it is possible to generate frictional heat at the contact portion by the driving unit that displaces the processed member in a state where the processed member and the workpiece are in contact with each other. This frictional heat thermally decomposes the supplied ozone gas and generates atomic oxygen from the ozone gas. The generated atomic oxygen is a bond such as a carboxyl group to a hydroxyl group (OH group) on the outermost surface of a processed member that is responsible for a chemical reaction (processing) with a work piece in an atmospheric environment, that is, contamination derived from an organic substance. Suppress the nation. Atomic oxygen decomposes and purifies organic matter-derived stains, and hydrophilizes the surface of the processed member to expose hydroxyl groups (OH groups), enabling stable physical and chemical processing of the workpiece. It will be possible.

Further, as described above, since the contact portion is in an ozone gas environment, it is possible to secure atomic oxygen required for stable processing.

In the present invention, the surface of the processed member is cleaned and hydrophilic by utilizing atomic oxygen generated by thermal decomposition of ozone at the contact site between the processed member and the workpiece, that is, at the position where the workpiece is processed. The chemical treatment is performed to realize physically and chemically stable processing of the work piece.

Further, the processed member is any one of sapphire, corundum, sapphire glass, sapphire crystal, polycrystalline alumina, alumina ceramics, _{and glass containing SiO 2} as a main component, which are _{composed of Al 2} O _3. When the workpiece is made of any one of diamond, polycrystalline diamond, CVD diamond, and DLC film, the workpiece can be processed in a sufficiently stable manner.

Further, when the processed member is _{made of glass containing SiO 2} as a main component and the workpiece is made of SiC, sufficiently stable processing with respect to SiC is possible.

Further, when at least one of the processed member or the workpiece is humidified, more stable processing becomes possible, the accuracy of the surface roughness can be further improved, and the processing efficiency can be improved.

Further, when the ozone gas contains an alkaline solution, the tribochemical reaction generated on the friction surface between the processed member and the workpiece can be promoted to generate an oxide on the processed surface of the workpiece, which can be preferentially removed. It becomes a thing. As a result, in addition to the processing using atomic oxygen generated by the thermal decomposition of ozone gas, the processing by the tribochemical reaction is promoted, the accuracy of the surface roughness can be further improved, and the processing efficiency can be improved. The alkaline solution referred to here is, for example, a solution showing alkalinity such as alkaline electrolyzed water, NaOH, and KOH.

Further, when the alkaline solution is alkaline electrolyzed water, it is possible to promote the tribochemical reaction with ozone gas containing the alkaline electrolyzed water. In addition, alkaline electrolyzed water is highly safe to handle and can be generated relatively easily, so that the processing method can be made safer and simpler. The alkaline electrolyzed water referred to here means alkaline water having a pH of 9.0 or more.

Further, when the charge amount is controlled by supplying at least one of cations or anions to at least one of the processed member or the workpiece, the charged state of the surface of the processed member and the workpiece is adjusted. Stabilize.
Then, the charged state of the surface of the processed member and the workpiece is controlled and then the workpiece is relatively displaced in contact with the workpiece whose surface is stabilized. The surface can be processed physically and chemically.

_{Further, when N 2} gas is supplied to the contact portion between the processed member and the workpiece to control the charge amount, it becomes easier to control the charged state of the surface of the processed member and the workpiece, and the surface roughness is roughened. It is possible to further improve the accuracy of the surface and further improve the processing efficiency.

In the present invention, the surface of the processed member is cleaned and hydrophilic by utilizing atomic oxygen generated by thermal decomposition of ozone at the contact site between the processed member and the workpiece, that is, at the position where the workpiece is processed. This is to realize the physically and chemically stable processing of the workpiece by performing the chemical treatment. Therefore, abrasive grain-free polishing can be realized. Further, since it is only necessary to install a device that supplies ozone to the contact portion between the processing member of the existing processing device and the workpiece, the processing system can be easily constructed.

The "processed member" includes, for example, metals such as iron, nickel, and Co, SiO ₂ , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, and K ₂ O. , _{Inorganic oxides such as CeO 2} , ceramics such as SiC, SiC, Al ₂ O ₃ , and processed members made of constituent materials thereof. Furthermore, as the workpiece, diamond, polycrystalline diamond, CVD diamond, diamond-related material DLC film, or the like, SiC, GaN, sapphire, SiC ceramics, _Si 3 _{N 4} ceramics, AIN, hard and brittle materials such as glass Can be mentioned.

Further, in order to achieve the above object, the processing apparatus of the present invention includes a processing member made of metal oxide, a holding mechanism for holding a predetermined workpiece in contact with the processing member, the processing member, and the processing member. It is provided with an ozone gas supply unit that supplies ozone gas to a contact portion with the workpiece and a drive unit that displaces the workpiece while the workpiece is in contact with the workpiece. The workpiece is alumina ceramics or SiO ₂ The work piece is made of GaN.

Here, the contact portion is placed in an ozone gas environment by a holding mechanism that holds a predetermined workpiece in contact with the workpiece and an ozone gas supply unit that supplies ozone gas to the contact portion between the workpiece and the workpiece. Can be done. That is, although ozone gas is an unstable molecule, by supplying ozone gas to the contact site, it becomes possible to localize the ozone gas in the same region.

Further, it is possible to generate frictional heat at the contact portion by the driving unit that displaces the processed member in a state where the processed member and the workpiece are in contact with each other. This frictional heat thermally decomposes the supplied ozone gas and generates atomic oxygen from the ozone gas. The generated atomic oxygen is a bond such as a carboxyl group to a hydroxyl group (OH group) on the outermost surface of a processed member that is responsible for a chemical reaction (processing) with a work piece in an atmospheric environment, that is, contamination derived from an organic substance. Suppress the nation. Atomic oxygen decomposes and purifies organic matter-derived stains, and hydrophilizes the surface of the processed member to expose hydroxyl groups (OH groups), enabling stable physical and chemical processing of the workpiece. It will be possible.

Further, as described above, since the contact portion is in an ozone gas environment, it is possible to secure atomic oxygen required for stable processing.

In the present invention, the surface of the processed member is cleaned and hydrophilic by utilizing atomic oxygen generated by thermal decomposition of ozone at the contact site between the processed member and the workpiece, that is, at the position where the workpiece is processed. The chemical treatment is performed to realize physically and chemically stable processing of the work piece.

Further, since the processing member is made of either alumina ceramics or _{glass containing SiO 2} as a main component and the workpiece is composed of GaN, sufficiently stable processing with respect to GaN becomes possible. ..

Further, when the ozone gas contains alkaline electrolyzed water, the tribochemical reaction generated on the friction surface between the processed member and the workpiece is promoted to generate an oxide on the processed surface of the workpiece, which is preferentially removed. It will be possible. As a result, in addition to the processing using atomic oxygen generated by the thermal decomposition of ozone gas, the processing by the tribochemical reaction is promoted, the accuracy of the surface roughness can be further improved, and the processing efficiency can be improved. The alkaline solution referred to here is, for example, a solution showing alkalinity such as alkaline electrolyzed water, NaOH, and KOH.

Further, it becomes possible to promote the tribochemical reaction with ozone gas containing alkaline electrolyzed water. By the tribochemical reaction, the reaction represented by the following reaction formula occurs, and it is possible to perform processing with high accuracy and high processing efficiency with respect to GaN.
2GaN + 3H ₂ O ⇔ Ga _{2 O 3} + _{2NH 3}
In addition, alkaline electrolyzed water is highly safe to handle and can be generated relatively easily, so that the processing method can be made safer and simpler. The alkaline electrolyzed water referred to here means alkaline water having a pH of 9.0 or more.

[About processing method]
In order to achieve the above object, the processing method of the present invention supplies at least one of a cation or an anion to at least one of a processing member or a work piece processed by the processing member. It includes a step of controlling the amount of charge and relatively displace the processed member and the workpiece in contact with each other.

Here, by supplying at least one of cations or anions to at least one of the processed member or the workpiece to control the amount of charge, the charged state of the surface of the processed member and the workpiece can be adjusted. Stabilize.
Then, the charged state of the surface of the processed member and the workpiece is controlled and then the workpiece is relatively displaced in contact with the workpiece whose surface is stabilized. The surface can be processed physically and chemically.

In the present invention, at least one of a cation or an anion is supplied to at least one of the processed member or the workpiece to control the charged state of the surface of the processed member and the workpiece, and the surface roughness is controlled. This is to realize machining with high accuracy and improved machining efficiency.

Further, it is possible to process the surface of the processed member by supplying anions to at least one of the processed member or the workpiece to control the charged state of the surfaces of the processed member and the workpiece.

Further, it is possible to process the surface of the processed member by supplying cations to at least one of the processed member or the workpiece to control the charged state of the surfaces of the processed member and the workpiece.

Further, it is possible to process the surface of the processed member by supplying anions and cations to at least one of the processed member or the workpiece to control the charged state of the surface of the processed member and the workpiece. ..

Further, when at least one of the processed member or the workpiece is humidified, the charged state can be further controlled, the accuracy of the surface roughness can be further improved, and the processing efficiency can be further improved. can.

Further, when the surface of the processed member is irradiated with ultraviolet light or plasma to purify and hydrophilize the surface of the processed member, it becomes easier to control the charged state of the surface of the processed member and the workpiece. The accuracy of the surface roughness can be further improved, and the processing efficiency can be further improved.

Further, when N ₂ gas is supplied to the contact portion between the processed member and the workpiece, the charged state of the surface of the processed member and the workpiece can be further controlled, and the accuracy of the surface roughness can be further improved. Moreover, the processing efficiency can be further improved.

In the present invention, by supplying at least one of a cation or an anion to at least one of the processed member or the workpiece, the charged state of the surface of the processed member and the workpiece is controlled, and the processed member is controlled. The surface of the work piece is physically and chemically processed while controlling the charged state of the surface of the work piece and the work piece by displacement of the work piece while the outermost surface portion of the work piece is in contact with the work piece. Is to be realized. Therefore, as compared with a general ultraviolet light source, stable processing can be performed by supplying at least one of a cation or an anion.

The "processed member" includes, for example, metals such as iron, nickel, and Co, SiO ₂ , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, and K ₂ O. , _{Inorganic oxides such as CeO 2} , ceramics such as SiC, SiC, Al ₂ O ₃ , and processed members made of constituent materials thereof. Furthermore, as the workpiece, diamond, polycrystalline diamond, CVD diamond, diamond-related material DLC film, or the like, SiC, GaN, sapphire, SiC ceramics, _Si 3 _{N 4} ceramics, AIN, hard and brittle materials such as glass Can be mentioned.

[About processing equipment]
Further, in order to achieve the above object, the processing apparatus according to the present invention has a cation or an anion on at least one of the processing member and the processing member or the workpiece processed by the processing member. A charging processing unit that supplies at least one of ions to control the amount of charge, a holding mechanism that holds a predetermined workpiece, and the same as the processed member in a state where the processed member and the workpiece are in contact with each other. It is provided with a drive unit that relatively displaces the workpiece.

Here, by a charging processing unit that controls the amount of charge by supplying at least one of cations and anions to the processed member and at least one of the processed member or the workpiece to be processed by the processed member. It stabilizes the charged state of the surfaces of the processed member and the workpiece.

Further, the machined member and the work piece are held by a holding mechanism for holding the work piece and the work piece, and a drive unit that relatively displaces the work piece and the work piece in a state where the work piece and the work piece are in contact with each other. After stabilizing the charged state of the surface of the work piece, the surface of the work piece can be physically and chemically processed.

In the present invention, the charging processing unit supplies at least one of cations and anions to at least one of the processed member or the workpiece to control the charged state of the surface of the processed member and the workpiece. It realizes processing with high surface roughness accuracy and improved processing efficiency.

Further, when a humidifying processing unit for humidifying at least one of the processed member or the workpiece is provided, it becomes easier to control the charged state, the accuracy of the surface roughness is further improved, and the processing efficiency is improved. It can be further improved.

Further, when the surface of the processed member is provided with a cleansing and hydrophilizing treatment unit, it becomes easier to control the charged state of the surface of the processed member and the workpiece, and the accuracy of the surface roughness is further improved. It can be enhanced and the processing efficiency can be further improved.

Further, when equipped with a N ₂ gas supply unit for supplying a N ₂ gas to the contact portion of the workpiece and the workpiece, it becomes more easily control the charge state of the surface of the workpiece and the workpiece, the surface roughness It is possible to further improve the accuracy of the above and further improve the processing efficiency.

In the present invention, the charged state of the surface of the processed member and the workpiece is controlled by a charging processing unit that supplies at least one of cations or anions to at least one of the processed member or the workpiece. The surface of the work piece is physically and chemically controlled by the drive unit that displaces the work piece while the outermost surface part of the work piece is in contact with the work piece, while controlling the charged state of the surface of the work piece and the work piece. It realizes processing in a targeted manner. Further, since it is only necessary to replace the ultraviolet light source of the existing processing device with a charging device or the like, the processing system can be easily constructed.

In the processing method and processing apparatus to which the present invention is applied, highly efficient and highly accurate processing can be realized with a simple structure by dry polishing for processing diamond or the like.

It is a schematic diagram for demonstrating the processing apparatus to which this invention is applied. This is data obtained by measuring the surface roughness of a part of the processed region of Comparative Example 1 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Comparative Example 2 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Example 1 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Comparative Example 3 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Example 2 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Comparative Example 4 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Example 3 with a non-contact shape measuring machine. It is the data which measured the surface roughness of a part of the processing area before processing of Example 4 with a non-contact shape measuring machine. It is the data which measured the surface roughness of a part of the processed area after processing of Example 4 with a non-contact shape measuring machine. It is a schematic diagram for demonstrating the processing apparatus to which this invention is applied. It is a schematic diagram for demonstrating the processing apparatus to which this invention is applied. This is data obtained by measuring the surface roughness of a part of the processed region of Comparative Example 5 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Example 5 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Comparative Example 8 with a non-contact shape measuring machine. It is the data which measured the surface roughness of a part of the processing area of Example 7 with a non-contact shape measuring machine. It is a graph which shows the relationship between the surface potential and the processing time of Example 9. It is a graph which shows the relationship between the surface potential and the processing time of Example 10. It is a graph which shows the relationship between the surface potential and the processing time of Example 11. It is a graph which shows the relationship between the surface potential and the processing time of the comparative example 11. This is data obtained by measuring the surface roughness of a part of the processed region of Example 9 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Example 10 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Example 11 with a non-contact shape measuring machine. This is data obtained by measuring the surface roughness of a part of the processed region of Comparative Example 11 with a non-contact shape measuring machine.

[First Embodiment of the invention]
Hereinafter, modes for carrying out the present invention (hereinafter, referred to as “first embodiment of the invention”) will be described.
FIG. 1 is a schematic view for explaining a processing apparatus to which the present invention is applied. The processing apparatus 1 shown here has a sapphire surface plate 2 and a sample holder 4 for holding a single crystal diamond 3. Further, the processing apparatus 1 has an ozone supply unit 5 that supplies ozone gas to a contact portion between the sapphire surface plate 2 and the single crystal diamond 3. The single crystal diamond 4 is an example of a work piece.

The single crystal diamond 3 which is the work piece comes into contact with the upper surface of the sapphire surface plate 2 (the upper surface on FIG. 1), and the work piece is polished. The sapphire surface plate 2 is an example of a processed member.

The ozone supply unit 5 is arranged above the sapphire surface plate 2. Further, the tip of the ozone supply unit 5, that is, the portion where ozone gas is discharged, is directed to the contact portion between the sapphire surface plate 2 and the single crystal diamond 3. As a result, the contact site is in an ozone environment. Further, the frictional heat generated between the sapphire surface plate 2 and the single crystal diamond 3 at the contact portion thermally decomposes the ozone gas into atomic oxygen, so that the workpiece is processed stably.

Here, in the present embodiment, the case where the processed member is formed of the sapphire surface plate 2 is described as an example, but a material capable of processing the workpiece is sufficient. It does not necessarily have to be formed by the sapphire surface plate 2. For example, metals such as iron, nickel, and Co, and inorganic oxides such as _{SiO 2} , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, K ₂ O, and CeO _2. It may be formed of ceramics such as SiC, SiC, Al ₂ O ₃ , and constituent materials made of them.

Further, the sapphire surface plate 2 is fixed on a processing table 6 whose rotation speed can be controlled, and the sapphire surface plate 2 is configured to be rotatable in the direction indicated by reference numeral A in FIG. 1 by the rotation of the processing table 6.

Further, the sample holder 4 is configured to be rotatable in the direction indicated by reference numeral B in FIG. 1 around the rotation axis 7 eccentric with respect to the rotation axis of the sapphire platen 2, and holds the single crystal diamond 3. From above, it descends to the position s where the single crystal diamond 3 and the sapphire platen 2 come into contact with each other. The reference numeral Y in the figure indicates the direction in which the load is applied.

Here, in the present embodiment, the work piece held in the sample holder 4 is described by taking the single crystal diamond 3 as an example, but the work piece is not limited to the single crystal diamond 3. without diamond, polycrystalline diamond, CVD diamond, may diamond-related material such as a DLC film, SiC, GaN, sapphire, SiC ceramics, _Si 3 _{N 4} ceramics, AIN, even hard and brittle materials such as glass or the like.

Hereinafter, a processing method using the processing apparatus 1 configured as described above will be described. That is, an example of a processing method to which the present invention is applied will be described.

In an example of the processing method to which the present invention is applied, ozone gas is supplied from the ozone supply unit 5 to the contact portion between the sapphire surface plate 2 and the single crystal diamond 3 while rotating the sapphire surface plate 2.

That is, while providing ozone gas to the contact portion between the sapphire surface plate 2 and the single crystal diamond 3, the frictional heat generated at the contact portion thermally decomposes the ozone gas to generate atomic oxygen. The surface of the sapphire surface plate 2 is cleaned and hydrophilized with the generated atomic oxygen. That is, the surface of the sapphire surface plate 2 is modified.

Then, the surface of the single crystal diamond 3 is physically and chemically removed by rotating the sapphire surface plate 2 in a state where the upper surface of the sapphire surface plate 2 having a modified surface is in contact with the single crystal diamond 3. It becomes.

As a modification of the present embodiment, it is possible to adopt an apparatus configuration shown in FIG. 1 in which a humidifying treatment unit is further provided. The humidification treatment unit is installed above the processing member. The humidifying treatment unit is a member that humidifies the surface of the processed member. Further, a method of supplying the moistened ozone gas to the contact portion between the sapphire surface plate 2 and the single crystal diamond 3 can also be adopted. By humidifying, the processing into the work piece can be further stabilized.

As a further modification of the present embodiment, there is also a method of impregnating the ozone gas supplied from the ozone supply unit with alkaline electrolyzed water (pH 9.0 or higher) and supplying the ozone gas to the contact portion between the processed member and the workpiece. Can be adopted.

When ozone gas contains alkaline electrolyzed water, it promotes the tribochemical reaction that occurs on the friction surface between the processed member and the work piece, generates oxides on the work surface of the work piece, and can be removed preferentially. Become. As a result, in addition to the processing using atomic oxygen generated by the thermal decomposition of ozone gas, the processing by the tribochemical reaction is promoted, the accuracy of the surface roughness can be further improved, and the processing efficiency can be improved.

Here, the solution contained in ozone gas may be an alkaline solution, and is not limited to alkaline electrolyzed water. For example, it is also possible to add an alkaline solution such as NaOH or KOH to ozone gas and use it for processing.

[effect]
The processing method and processing apparatus to which the present invention is applied utilize atomic oxygen generated by thermal decomposition of ozone at the contact site between the processing member and the workpiece, that is, at the position where the workpiece is processed. Therefore, the surface of the processed member can be treated more uniformly than the device that irradiates ultraviolet light. As a result, more stable and high processing accuracy can be realized.

Further, the processing apparatus to which the present invention is applied can be easily constructed only by arranging the ozone supply unit in the existing apparatus.

Further, since the processing method and processing apparatus to which the present invention is applied do not use abrasive grains, it is not necessary to perform abrasive grain processing after processing.

Further, in the case of processing using abrasive grains, it is necessary to supply the abrasive grains in a slurry state, and the processed member and the workpiece become wet with the slurry, so that the temperature does not rise easily and the processing proceeds. hard.
On the other hand, in the processing method to which the present invention is applied, since no abrasive grains are used, no slurry is supplied, the processed member and the workpiece are in a dry state, and the temperature rises including frictional heat. Easy to proceed with chemical reaction. That is, high-precision and high-efficiency processing of difficult-to-process materials can be realized.

Hereinafter, examples and comparative examples of the present invention will be described. It should be noted that the examples shown here are examples and do not limit the present invention.

[Example 1 and Comparative Examples 1 and 2]
As the processing method of Example 1 of the present invention, processing was performed under the following conditions. First, as the processing method of Example 1 of the present invention, a single crystal diamond (3 mm × 3 mm) is ^{pressed against the sapphire surface plate as a work piece with a load of 2} kg (22.2 kg / cm 2) to rotate the sapphire surface plate. The sample holder was rotated at 1000 rpm while rotating under the conditions of several 250 rpm, a swing distance of 3 mm, and a swing speed of 0.1 mm / s. Further, ozone gas (5 L / min) was supplied from the ozone supply unit to the contact portion between the sapphire surface plate and the single crystal diamond. Processing was performed for 1.5 hours in such a situation.
Comparative Example 1 was obtained in the same manner as in Example 1 in which ozone was not supplied by the ozone supply unit.
Further, an ultraviolet light source is further installed in the apparatus configuration of the processing method of Example 1 described above, and ozone is irradiated to ^{the sapphire surface plate from above under the condition of irradiation intensity of 6 mW / cm 2.} Comparative Example 2 was used in which ozone was not supplied by the supply unit.
With respect to Example 1 and Comparative Examples 1 and 2 described above, the surface roughness of the processed single crystal diamond was measured with a non-contact shape measuring machine and evaluated.

FIG. 2 shows the result of Comparative Example 1, FIG. 3 shows the result of Comparative Example 2, and FIG. 4 shows the result of Example 1.

As is clear from FIGS. 2 and 4, the machined surface of the workpiece is machined with higher accuracy by the machining of Example 1 than the machined surface of the workpiece of Comparative Example 1, and is within the measurement range of the workpiece. The value of the arithmetic mean roughness (Ra) was 0.119 nm, and it was found that the processing was smooth. The value of the arithmetic mean roughness (Ra) of Comparative Example 1 was 2.213 nm.
Further, as is clear from FIGS. 3 and 4, it is found that the processed surface of the workpiece is processed with higher accuracy by the processing of Example 1 than the processed surface of the workpiece of Comparative Example 2. rice field.
The value of the arithmetic mean roughness (Ra) in the measurement range of the work surface of Comparative Example 2 was 0.177 nm.

(1) Machining efficiency The machining efficiencies by the machining methods of Example 1 and Comparative Examples 1 and 2 described above were confirmed with the following contents.
Grooves having a predetermined depth were formed in the single crystal diamond to be processed, and the machining efficiency was calculated from the amount of change in the groove depth before and after machining.

The processing efficiency in Example 1 was 2453.5 nm / h, indicating a sufficient processing efficiency.
On the other hand, the processing efficiency in Comparative Example 1 was 33.3 nm / h. The processing efficiency in Comparative Example 2 was 238.1 nm / h.

(2) Surface Roughness of Processed Surface of Worked Work [Example 2 and Comparative Example 3]
As the processing method of Example 2 of the present invention, processing was performed under the following conditions. First, as the processing method of Example 2 of the present invention, a SiC substrate (Single-crystal 4H-SiC 4 ° off) (2 inches) is loaded on a soda-lime glass platen as a workpiece at a load of 3 kg. The soda-lime glass platen was rotated under the conditions of a rotation speed of 200 rpm, a swing distance of 6 mm, and a swing speed of 0.1 mm / s, and the sample holder was rotated at 30 rpm. In addition, an ultraviolet light source was installed, and the soda-lime glass surface plate was irradiated with ultraviolet light (172 nm) from above under the condition of an irradiation ^{intensity of 6 mW / cm 2.} Further, ozone gas (5 L / min) was supplied from the ozone supply unit to the contact portion between the soda-lime glass surface plate and the SiC substrate. Processing was performed for 2 hours in such a situation. Soda-lime glass is an example of glass containing _{SiO 2 as a main component.}
Comparative Example 3 was obtained by mechanically polishing the same sample before carrying out the processing method of Example 2 with diamond abrasive grains.
With respect to the above-mentioned Example 2 and Comparative Example 3, the surface roughness of the processed SiC substrate was measured by a non-contact shape measuring machine and evaluated.

FIG. 5 shows the result of Comparative Example 3, and FIG. 6 shows the result of Example 2.

As is clear from FIGS. 5 and 6, the machined surface of the work piece is machined with higher accuracy by the machining of Example 2 than the machined surface of the work piece of Comparative Example 3, and is within the measurement range of the work surface. The value of the arithmetic mean roughness (Ra) was 0.311 nm, and it was found that the processing was smooth. The value of the arithmetic mean roughness (Ra) of Comparative Example 3 was 1.601 nm.

(3) Machining efficiency With respect to the machining efficiency by the machining methods of Example 2 and Comparative Example 3 described above, the machining efficiency was calculated with the same contents as in (2) above.

The processing efficiency in Example 2 was 2011.3 nm / h, while the processing efficiency in Comparative Example 3 was 72.26 nm / h.

(4) Surface Roughness of Processed Surface of Worked Work [Example 3 and Comparative Example 4]
As the processing method of Example 3 of the present invention, processing was performed under the following conditions. First, as the processing method of Example 3 of the present invention, a GaN substrate (10 mm × 10 mm) as a work piece is pressed against an alumina ceramic surface plate with a load of ^{250 g (250 g / cm 2), and the alumina ceramic surface plate is rotated.} The sample holder was rotated at 250 rpm while rotating under the conditions of 250 rpm, a swing distance of 10 mm, and a swing speed of 0.5 mm / s. Further, ozone gas (5 L / min) was supplied from the ozone supply unit to the contact portion between the alumina ceramic surface plate and the GaN substrate. Processing was performed for 1 hour in such a situation.
Comparative Example 4 was prepared by mechanically polishing the same sample before carrying out the processing method of Example 3 with diamond abrasive grains.
With respect to the above-mentioned Example 3 and Comparative Example 4, the surface roughness of the processed GaN substrate was measured with a non-contact shape measuring machine and evaluated.

FIG. 7 shows the result of Comparative Example 4, and FIG. 8 shows the result of Example 3.

As is clear from FIGS. 7 and 8, the machined surface of the workpiece is machined with higher accuracy by the machining of Example 3 than the machined surface of the workpiece of Comparative Example 4, and is within the measurement range of the workpiece. The value of the arithmetic mean roughness (Ra) was 0.483 nm, and it was found that the processing was smooth. The value of the arithmetic mean roughness (Ra) of Comparative Example 4 was 2.837 nm.

[Example 4]
As the processing method of Example 4 of the present invention, processing was performed under the following conditions. First, as the processing method of Example 4 of the present invention, GaN (gallium nitride) (10 mm × 10 mm) is pressed against the glass surface plate as a work piece with a load of 0.5 kg, and the glass surface plate is shaken at a rotation speed of 200 rpm. The sample holder was rotated at 31.25 rpm while being rotated under the conditions of a moving distance of 3 mm and a swing speed of 0.1 mm / s. Further, ozone gas (5 L / min) containing alkaline electrolyzed water having a pH of 9.4 was supplied from the ozone supply unit to the contact portion between the glass surface plate and GaN. Processing was performed for 1 hour in such a situation.
With respect to Example 4 above, the surface roughness of GaN before and after processing was measured with a non-contact shape measuring machine and evaluated.

FIG. 9 shows the result before processing, and FIG. 10 shows the result after processing.

As is clear from FIGS. 9 and 10, the machined surface of the workpiece before machining is machined with high accuracy by the machining of Example 4, and the value of the arithmetic mean roughness (Ra) in the measurement range of the workpiece is It was 0.176 nm, and it was found that it was processed smoothly. The value of the arithmetic mean roughness (Ra) in the measurement range of the surface to be processed before processing was 0.922 nm. Further, the processing efficiency in Example 4 was 2979 nm / h, showing a sufficient processing efficiency.

[Second Embodiment of the Invention]
Hereinafter, modes for carrying out the present invention (hereinafter, referred to as “second embodiment of the invention”) will be described.
FIG. 11 is a schematic view for explaining a processing apparatus to which the present invention is applied. The processing apparatus 11 shown here is an insulating synthetic quartz platen 12 and a charge that changes the charge amount of the synthetic quartz platen 12. It has a unit 13 and a sample holder 15 that holds an insulating single crystal diamond 14. The charging unit 13 is an example of a charging processing unit, and the single crystal diamond 14 is an example of a work piece.

The single crystal diamond 14 which is the work piece is in contact with the upper surface (upper surface on FIG. 11) of the synthetic quartz surface plate 12, and the work piece is polished. The synthetic quartz surface plate 12 is an example of a processed member.

The charging unit 13 is arranged above the synthetic quartz surface plate 12, and supplies cations or anions to the upper surface of the synthetic quartz surface plate 12 to forcibly control the charge amount of the synthetic quartz surface plate 12 from the outside. .. By controlling the amount of charge, the surface of the synthetic quartz surface plate 12 is modified, and the single crystal diamond 14 comes into contact with the surface and an electrochemical action acts to polish the workpiece.

Here, in the present embodiment, the case where the processed member is formed of the insulating synthetic quartz surface plate 12 is described as an example, but the charging amount can be controlled by the charging unit 13. Any material is sufficient, and it is not always necessary to form the insulating synthetic quartz surface plate 12. For example, metals such as iron, nickel, and Co, and inorganic oxides such as _{SiO 2} , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, K ₂ O, and CeO _2. It may be formed of ceramics such as SiC, SiC, Al ₂ O ₃ , and constituent materials made of them.

Further, the synthetic quartz surface plate 12 is fixed on a processing table 16 whose rotation speed can be controlled, and the synthetic quartz surface plate 12 is configured to be rotatable in the direction indicated by reference numeral A in FIG. 11 by the rotation of the processing table 16. There is.

Further, the sample holder 15 is configured to be rotatable in the direction indicated by reference numeral B in FIG. 11 around the rotation axis 17 eccentric with respect to the rotation axis of the synthetic quartz platen 12, and holds the single crystal diamond 14. In this state, it descends from above to a position where the single crystal diamond 14 and the synthetic quartz platen 12 come into contact with each other. The reference numeral Y in the figure indicates the direction in which the load is applied.

Here, in the present embodiment, the work piece held in the sample holder 15 is described by taking a single crystal diamond 14 as an example, but the work piece is not limited to the single crystal diamond 14. without diamond, polycrystalline diamond, CVD diamond, may diamond-related material such as a DLC film, SiC, GaN, sapphire, SiC ceramics, _Si 3 _{N 4} ceramics, AIN, even hard and brittle materials such as glass or the like.

Hereinafter, a processing method using the processing apparatus 11 configured as described above will be described. That is, an example of a processing method to which the present invention is applied will be described.

In an example of the processing method to which the present invention is applied, cations or anions are supplied from the charging unit 13 to the synthetic quartz surface plate 12 while rotating the synthetic quartz surface plate 12.

That is, by supplying cations or anions to the upper surface of the synthetic quartz surface plate 12, the amount of charge on the surface of the synthetic quartz surface plate 12 is controlled and the surface is modified.

Then, the surface of the single crystal diamond 14 is physically and chemically removed by rotating the synthetic quartz plate 12 with the upper surface of the synthetic quartz plate 12 having a modified surface and the single crystal diamond 14 in contact with each other. Will be done.

As a modification (1) of the present embodiment, the configuration of the processing apparatus shown in FIG. 12 can also be adopted. In the processing apparatus 18 shown in FIG. 12, an ultraviolet light source 19 is further installed in the configuration of the processing apparatus 11 shown in FIG. 11 described above.

The ultraviolet light source 19 is above the synthetic quartz surface plate 12, is arranged at a position different from that of the charging unit 13, and irradiates the upper surface of the synthetic quartz surface plate 12 with ultraviolet light.

In the processing method of the modified example (1) of the present embodiment, while rotating the synthetic quartz surface plate 12, cations or anions are supplied from the charging unit 13 to the synthetic quartz surface plate 12, and further, the ultraviolet light source 19 Irradiate ultraviolet light from.

That is, by irradiating the upper surface of the synthetic quartz surface plate 12 with ultraviolet light, the surface of the synthetic quartz surface plate 12 is cleaned and hydrophilized. Specifically, by irradiating ultraviolet light to expose OH groups on the outermost surface of the synthetic quartz surface plate 12, the reaction sites with atoms on the surface of the single crystal diamond 14 are increased.

Then, the upper surface of the synthetic quartz platen 12 in a state where the reaction sites are increased comes into contact with the single crystal diamond 14, and the synthetic quartz platen 12 rotates to chemically change the reaction sites with the atoms on the surface of the single crystal diamond 14. The surface of the diamond substrate is physically and chemically removed. That is, the electrochemical action of controlling the amount of charge and the effect of irradiation with ultraviolet light are added, and the processing efficiency can be further improved.

Further, in the processing method to which the present invention is applied, a method of increasing the processing efficiency by adding a condition for humidifying the processed member can also be adopted.

[effect]
The processing apparatus to which the present invention is applied can be easily constructed only by arranging the charging unit in the existing apparatus.

Further, since the processing method and processing apparatus to which the present invention is applied do not use abrasive grains, it is not necessary to perform abrasive grain processing after processing.

Further, in the case of processing using abrasive grains, it is necessary to supply the abrasive grains in a slurry state, and the processed member and the workpiece become wet with the slurry, so that the temperature does not rise easily and the processing proceeds. hard.
On the other hand, in the processing method to which the present invention is applied, since no abrasive grains are used, no slurry is supplied, the processed member and the workpiece are in a dry state, and the temperature rises including frictional heat. Easy to proceed with chemical reaction. That is, high-precision and high-efficiency processing of difficult-to-process materials can be realized.

Hereinafter, examples and comparative examples of the present invention will be described. It should be noted that the examples shown here are examples and do not limit the present invention.

(5) Surface Roughness of Processed Surface of Worked Work [Examples 5 to 7 and Comparative Examples 5 to 7]
As the processing method of Example 5 of the present invention, processing was performed under the following conditions. First, as the processing method of Example 5 of the present invention, a single crystal diamond (3 mm × 3 mm) is ^{pressed against the sapphire surface plate as a work piece with a load of 2} kg (22.2 kg / cm 2) to rotate the sapphire surface plate. The sample holder was rotated at 1000 rpm while rotating under the conditions of several 250 rpm, a swing distance of 3 mm, and a swing speed of 0.1 mm / s. In addition, anions were supplied from the charging unit from above the sapphire surface plate. In addition, a humidifying unit was used to humidify the sapphire surface plate from above. Processing was performed for 1.5 hours in such a situation.
Example 6 was defined in which cations were supplied from the charging unit in the same manner as in Example 5.
An unprocessed single crystal diamond was designated as Comparative Example 5.
Further, Comparative Example 6 was obtained in which the anion or cation was not supplied and the humidification treatment was not performed in the same manner as in Example 5. That is, it is a method in which the charge amount of the sapphire surface plate is not controlled and only physical processing is performed by the relative displacement between the processed member and the workpiece.
Further, a humidifying treatment was performed from above the sapphire surface plate by the humidifying unit by the same method as in Comparative Example 6, and this was designated as Comparative Example 7.
The surface roughness of the surface to be processed was evaluated with a scanning white interferometer for Examples 5 to 6 and Comparative Examples 5 to 7 described above. The measurement range is 696 μm × 522 μm.

FIG. 13 shows the scanning white interferometer image of Comparative Example 5, and FIG. 14 shows the scanning white interferometer image of Example 5.

As is clear from FIGS. 13 and 14, the machined surface of the workpiece is machined with higher accuracy by the machining of Example 5 than the surface of the unprocessed workpiece of Comparative Example 5, and the measurement range of the workpiece surface is measured. The value of the arithmetic mean roughness (Ra) in the above was 0.308 nm, and it was found that the processing was smooth. The value of the arithmetic mean roughness (Ra) of Comparative Example 5 was 8.118 nm.
Further, although not shown, in the machining of Example 6, the machined surface of the work piece is machined with high accuracy, and the arithmetic mean roughness (Ra) value in the measurement range of the work surface is 0.341 nm, which is smooth. It turned out that it had been processed.
On the other hand, in the processing of Comparative Example 6 in which no anion or cation was supplied, the value of the arithmetic mean roughness (Ra) in the measurement range of the surface to be processed was 2.595 nm.

(6) Machining efficiency The machining efficiencies according to the machining methods of Examples 5 to 6 and Comparative Examples 6 to 7 described above were confirmed with the following contents.
Grooves having a predetermined depth were formed in the single crystal diamond to be processed, and the machining efficiency was calculated from the amount of change in the groove depth before and after machining.

The processing efficiency in Example 5 was 572.2 nm / h, and the processing efficiency in Example 6 was 454.3 nm / h, showing sufficient processing efficiency.
On the other hand, the processing efficiency in Comparative Example 6 was 23.2 nm / h. The processing efficiency in Comparative Example 7 was 99.7 nm / h.

(7) Surface Roughness of Processed Surface of Worked Work [Examples 7 to 8 and Comparative Example 8]
As the processing method of Example 7 of the present invention, an ultraviolet light source was further installed in the apparatus configuration of the processing method of Example 5 described above, and processing was performed under the condition of irradiating the sapphire surface plate with ultraviolet light. Further, in Example 7, anions were supplied from the charging unit from above the sapphire surface plate, as in Example 5. In addition, a humidifying unit was used to humidify the sapphire surface plate from above. Other conditions are the same as in Example 5.
Example 8 was defined in which cations were supplied from the charging unit in the same manner as in Example 7.
The unprocessed single crystal diamond was designated as Comparative Example 8.
The surface roughness of the surface to be processed was evaluated with a scanning white interferometer for Examples 7 to 8 and Comparative Example 8 described above. The measurement range is 696 μm × 522 μm.

FIG. 15 shows the scanning white interferometer image of Comparative Example 8, and FIG. 16 shows the scanning white interferometer image of Example 7.

As is clear from FIGS. 15 and 16, the machined surface of the work piece is machined with higher accuracy by the processing of Example 7 than the surface of the unprocessed work piece of Comparative Example 8, and the measurement range of the work surface is measured. The value of the arithmetic mean roughness (Ra) in the above was 0.625 nm, and it was found that the processing was smooth. The value of the arithmetic mean roughness (Ra) of Comparative Example 8 was 4.320 nm.
Further, although not shown, the machined surface of the work piece is machined with high accuracy in the processing of Example 8, and the arithmetic mean roughness (Ra) value in the measurement range of the work surface is 0.924 nm, which is smooth. It turned out that it had been processed.

(8) Machining efficiency The machining efficiencies according to the machining methods of Examples 7 to 8 and Comparative Examples 9 to 10 described above were confirmed with the following contents.
Comparative Example 9 is a method in which ultraviolet light irradiation and humidification treatment are performed in the processing method of Example 7, but anions are not supplied from the charging unit. That is, it is a process in which the charge amount of the sapphire surface plate is not controlled and only the irradiation with ultraviolet light is performed. The other processing conditions are the same as the processing method of Example 7.
Further, in the same manner as in Comparative Example 9, a humidifying unit that did not perform humidification treatment from above the sapphire surface plate was designated as Comparative Example 10.
Grooves having a predetermined depth were formed in the single crystal diamond to be processed, and the machining efficiency was calculated from the amount of change in the groove depth before and after machining.

The processing efficiency in Example 7 was 3741.4 nm / h or more, and the processing efficiency in Example 8 was 2858.9 nm / h, showing sufficient processing efficiency. It has become clear that the processing efficiencies of Examples 7 and 8 are methods that exhibit even higher processing efficiencies than the processing efficiencies of Examples 5 and 6 described above.
On the other hand, the processing efficiency in Comparative Example 9 was 543.4 nm / h or more. The processing efficiency in Comparative Example 10 was 238.1 nm / h.
As described above, the processing efficiency is calculated by processing a single crystal diamond as a work piece in advance based on the amount of change in the depth of the groove before and after processing. Since the groove of the single crystal diamond disappeared in the processing of Comparative Example 9, the numerical value of the processing efficiency of Example 7 was "3741.4 nm / h or more", and the processing efficiency of Comparative Example 9 was "543.4 nm / h or more". It is written as.

(9) Surface potential of the workpiece [Examples 9 to 11 and Comparative Example 11]
As the processing method of Example 9 of the present invention, the charging unit is removed from the apparatus configuration of the processing method of Example 5 described above (no humidification treatment is performed), and the processing member is changed from a sapphire surface plate to a synthetic quartz surface plate. Then, Example 9 was set in which _{N 2} gas was supplied to the vicinity of the processing point, which is the contact site between the surface plate and the single crystal diamond to be processed. Processing was performed for 1.5 hours in such a situation.
A humidifying unit subjected to a humidifying treatment in the same manner as in Example 9 was designated as Example 10.
An anion supplied from the charging unit in the same manner as in Example 10 was designated as Example 11.
Further, the processing method of Example 9 in which N ₂ gas was not supplied was designated as Comparative Example 11.
For Examples 9 to 11 and Comparative Example 11 described above, the surface potential of the synthetic quartz surface plate was measured with a surface electrometer to evaluate the amount of charge.

The relationship between the surface potential and the processing time is shown graphically in FIGS. 17 to 20. 17 is the result of Example 9, FIG. 18 is the result of Example 10, FIG. 19 is the result of Example 11 and FIG. 20 is the result of Comparative Example 11. The vertical axis of the graph is the surface potential, and the horizontal axis is the processing time (min).

As is apparent from FIG. 17, by supplying N ₂ gas to the synthetic quartz plate, it was found that the surface potential of the surface plate is controlled to a certain range of values. Further, as is clear from FIGS. 18 and 19 _{, the surface potential of the surface plate can be obtained by using N 2} gas supply and humidification treatment, or N ₂ gas supply and humidification treatment, and ion supply from the charging unit in combination. Was found to be able to be controlled more tightly.

(10) Surface Roughness of Processed Surface of Worked Work Surface Roughness of the machined surface was measured with a scanning white interferometer in the same manner as in Examples 9 to 11 and Comparative Example 11 described above. evaluated.

21 to 24 show scanning white interferometer images. 21 is the result of Example 9, FIG. 22 is the result of Example 10, FIG. 23 is the result of Example 11 and FIG. 24 is the result of Comparative Example 11.

As is clear from FIGS. 21 and 24, the machined surface of the workpiece is machined with higher accuracy by the machining of Example 9 than the surface of the unprocessed workpiece of Comparative Example 11, and the measurement range of the workpiece surface is measured. The value of the arithmetic mean roughness (Ra) in the above was 0.565 nm, and it was found that the processing was smooth. The value of the arithmetic mean roughness (Ra) of Comparative Example 11 was 1.805 nm.
Further, as shown in FIGS. 22 and 23, in the machining of Examples 10 and 11, the machined surface of the work piece is machined with even higher accuracy, and the arithmetic mean in the measurement range of the work surface of Example 6 is achieved. The value of roughness (Ra) was 0.184 nm, and the value of arithmetic mean roughness (Ra) in the measurement range of the surface to be machined in Example 11 was 0.149 nm, and the work was smooth. I understood.

(11) Machining efficiency With respect to Examples 9 to 11 and Comparative Example 11 described above, the machining efficiency was evaluated with the same contents as the above-mentioned method.

The processing efficiency in Example 9 is 586.2 nm / h, the processing efficiency in Example 10 is 1261.8 nm / h, and the processing efficiency in Example 11 is 1560 nm / h. In particular, Examples 10 and 11 are sufficient. It showed excellent processing efficiency.
On the other hand, the processing efficiency in Comparative Example 11 was 38.33 nm / h.

1 Processing equipment 2 Sapphire platen 3 Single crystal diamond 4 Sample holder 5 Ozone supply unit 6 Processing table 7 Rotating shaft 11 Processing equipment 12 Synthetic quartz platen 13 Charging unit 14 Single crystal diamond 15 Sample holder 16 Processing table 17 Rotating shaft 18 Processing Equipment 19 Ultraviolet light source

Claims (14)

It is provided with a step of bringing a processed member composed of a metal oxide into contact with a work piece, supplying ozone gas containing an alkaline solution to the contact portion, and displace the processed member in a state of being in contact with the work piece. Processing method. The frictional heat generated at the contact site decomposes ozone gas.
The processing method according to claim 1 . The processed member is any one _{of sapphire in a single crystal state composed of Al 2} O ₃ , corundum, sapphire glass, sapphire crystal, alumina in a polycrystalline state, alumina ceramics, _{and glass containing SiO 2} as a main component. Consists of
The workpiece is composed of any one of diamond, polycrystalline diamond, CVD diamond, and DLC film.
The processing method according to claim 1 . The processed member is _{made of glass containing SiO 2} as a main component.
The work piece is made of SiC.
The processing method according to claim 1 . Humidify at least one of the processed member or the work piece
The processing method according to claim 1 . The alkaline solution is alkaline electrolyzed water.
The processing method according to claim 1 . And the processing member, wherein the controlling the amount of charge by supplying N ₂ gas to the contact portion between the workpiece
The processing method according to claim 1 . Processing members made of metal oxides and
A holding mechanism that holds a predetermined workpiece in contact with the machined member,
An ozone gas supply unit that supplies ozone gas containing an alkaline solution to the contact portion between the processed member and the workpiece, and
It is provided with a drive unit that displaces the machined member in a state where the machined member and the work piece are in contact with each other.
Processing equipment. Friction heat is generated at the contact portion between the processed member and the workpiece.
The processing apparatus according to claim 8. The processed member is Al ₂ O ₃ Single crystal state sapphire, corundum, sapphire glass, sapphire crystal, polycrystalline state alumina, alumina ceramics SiO composed of ₂ Consists of any one of the glasses whose main component is
The workpiece is composed of any one of diamond, polycrystalline diamond, CVD diamond, and DLC film.
The processing apparatus according to claim 8. The processed member is SiO ₂ It consists of glass whose main component is
The work piece is made of SiC.
The processing apparatus according to claim 8. A humidifying treatment unit for humidifying the processed member or the workpiece is provided.
The processing apparatus according to claim 8. The alkaline solution is alkaline electrolyzed water.
The processing apparatus according to claim 8. N at the contact site between the processed member and the workpiece ₂ N that supplies gas and controls the amount of charge ₂ Equipped with a gas supply unit
The processing apparatus according to claim 8.

Images