JP6515311B2 - Processing method and processing apparatus - Google Patents

Description

  The present invention relates to a processing method and a processing apparatus. More specifically, the present invention relates to a processing method and a processing apparatus capable of realizing highly efficient and highly accurate processing with a simple structure by dry polishing for processing a diamond or the like.

  Diamond has a wide band gap of 5.4 eV, has a large thermal conductivity, and is excellent in dielectric breakdown electric field, charge mobility, and the like, and thus is regarded as a promising material for next-generation power semiconductor devices.

  In order to manufacture a semiconductor device using diamond, it is said that a processing technique for finishing the surface of the diamond substrate underlying the device at the atomic level and making a disorderless finish is indispensable. However, diamond is extremely difficult to process due to its high hardness and chemical stability, and the development of processing techniques has become a technical issue.

  For example, as a conventional processing method, processing in which chemical removal is performed by polishing using abrasive grains such as chemical mechanical polishing is known. However, since the chemical reaction in the polishing agent is used, the removal rate is slow, and the processing efficiency is insufficient.

  Here, there is a processing method in the air environment where an attempt is made to improve the processing efficiency without using abrasive grains for the above-mentioned polishing in the solution environment.

  For example, the polishing platen is brought into contact with the surface to be polished of a substrate made of diamond under high pressure, and the substrate is rubbed relative to the polishing platen while irradiating ultraviolet light from the back surface of the polishing platen to the polishing surface of the substrate. A technique for polishing by moving is proposed (see, for example, Patent Document 1).

  In addition, the inventors of the present invention apply ultraviolet light or plasma to a polishing platen made of metal oxide to remove chemical contamination (organic contaminants) on the surface of the platen, and There is proposed a processing method of hydrophilizing (exposing an OH group on the outermost surface portion) (see, for example, Patent Document 2).

  In the method described in Patent Document 2, the surface of the surface plate is made hydrophilic to increase reaction sites with atoms on the surface of the object to be processed, and chemically react with atoms on the surface of the object to be processed. is there.

International Publication No. 2007/007683 International Publication No. 2014/034921

  However, in the processing methods described in Patent Document 1 and Patent Document 2, although processing is performed by irradiation of ultraviolet light, ultraviolet light is unstable in the atmosphere, and energy stored instantaneously is lost. It was difficult to uniformly irradiate the workpiece. Therefore, it has been difficult to stably achieve high processing accuracy.

  Moreover, in the process of patent document 1 and patent document 2, there existed restrictions in the installation place of an ultraviolet light source on the structure of the processing apparatus which relatively displaces the surface plate and the holding part of a to-be-processed object. That is, the existing processing apparatus can not be used as it is, and it has been necessary to manufacture a processing apparatus of a special specification for providing an ultraviolet light source.

  Moreover, in dry polishing, when the workpiece and the workpiece are brought into contact and relatively displaced, frictional charging occurs. There is a problem that the charged state of the surface of the processing member and the workpiece becomes unstable due to the frictional charging, and the surface roughness after processing and the processing efficiency can not be controlled with high accuracy.

  The present invention has been made in view of the above points, and a processing method and processing apparatus capable of realizing highly efficient and highly accurate processing with a simple configuration by dry polishing for processing a diamond or the like. It is intended to be provided.

[About processing method]
In order to achieve the above object, according to the processing method of the present invention, a processed member made of a metal oxide is brought into contact with a workpiece, ozone gas is supplied to the contact portion, and the processed member is the workpiece And displacing in a state of being in contact with

  Here, the contact portion can be placed in the ozone gas environment by bringing the processing member into contact with the workpiece and supplying the ozone gas to the contact portion. That is, although ozone gas is an unstable molecule, it becomes possible to localize ozone gas in the same field by supplying ozone gas to a contact part.

  Further, it is possible to generate frictional heat at the contact portion by the step of displacing the processing member in a state of being in contact with the workpiece. The frictional heat thermally decomposes the supplied ozone gas to generate atomic oxygen from the ozone gas. The generated atomic oxygen is a bond such as a carboxyl group to a hydroxyl group (OH group) on the outermost surface of the processed member responsible for the chemical reaction (processing) with the workpiece under the atmospheric environment, ie, contamination derived from organic matter Suppress the nation. Stable physical and chemical processing of the processed material is achieved by hydrophilization that atomic oxygen decomposes and cleans the dirt derived from organic matter and exposes hydroxyl groups (OH groups) on the surface of the processing member It becomes possible.

  Further, as described above, since the contact site is under the ozone gas environment, it is possible to secure atomic oxygen necessary for stable processing.

  In the present invention, the atomic oxygen generated by the thermal decomposition of the ozone gas is utilized at the contact site of the workpiece and the workpiece, that is, at the position where the workpiece is to be machined, to clean and hydrophilicize the surface of the workpiece. Treatment to realize physically and chemically stable processing of the workpiece.

Further, the processing member, sapphire single crystal state consisting of Al ₂ O _3, corundum, sapphire glass, sapphire crystal, polycrystalline state alumina, alumina ceramics, one of the glass as a main component SiO ₂ 1 In the case where the workpiece is made of one of diamond, polycrystalline diamond, CVD diamond, and DLC film, sufficiently stable processing of the workpiece is possible.

Further, when the processing member is made of glass containing SiO ₂ as the main component and the workpiece is made of SiC, sufficiently stable processing with respect to SiC becomes possible.

  Further, in the case of humidifying at least one of the processing member or the workpiece, the processing can be further stabilized, the accuracy of the surface roughness can be further enhanced, and the processing efficiency can be improved.

  In addition, when the ozone gas contains an alkaline solution, the tribochemical reaction occurring on the friction surface between the workpiece and the workpiece can be promoted to form an oxide on the workpiece surface of the workpiece to be removed preferentially. It becomes a thing. As a result, in addition to processing using atomic oxygen generated by thermal decomposition of ozone gas, processing by tribochemical reaction is promoted, accuracy of surface roughness can be further enhanced, and processing efficiency can be improved. In addition, an alkaline solution here is a solution which shows alkalinity, such as alkaline electrolyzed water, NaOH, KOH, for example.

  Moreover, when an alkaline solution is alkaline electrolyzed water, it becomes possible to accelerate a tribochemical reaction by ozone gas containing alkaline electrolyzed water. In addition, alkaline electrolyzed water has high safety during handling and can be generated relatively easily, so the processing method can be made safer and simpler. In addition, alkaline electrolyzed water here means alkaline water whose pH is 9.0 or more.

In addition, when at least one of cation and anion is supplied to at least one of the workpiece and the workpiece to control the charge amount, the charged state of the surface of the workpiece and the workpiece is determined. Stabilize.
Then, by relatively displacing the workpiece in a state in which the workpiece is in contact with the processing member whose charged state on the surface is stabilized, the charging status of the surfaces of the workpiece and the workpiece is controlled and then the workpiece is processed. The surface can be physically and chemically processed.

In addition, when the amount of charge is controlled by supplying N ₂ gas to the contact portion between the processing member and the workpiece, it becomes easier to control the charging state of the surface of the processing member and the workpiece, and the surface is roughened. The accuracy of the threading can be further enhanced, and the processing efficiency can be further enhanced.

  In the present invention, the atomic oxygen generated by the thermal decomposition of ozone is utilized at the contact site of the workpiece and the workpiece, ie, at the position where the workpiece is to be machined, to clean and hydrophilicize the surface of the workpiece. Treatment to realize physically and chemically stable processing of the workpiece. Therefore, abrasive-free polishing can be realized. Further, since it is sufficient to install an apparatus for supplying ozone to the contact portion between the processing member of the existing processing apparatus and the workpiece, the processing system can be easily constructed.

As "processing member", for example, iron, nickel, metal such as _{Co, SiO 2, ZrO 2, Al} 2 O 3, TiO 2, Fe 2 O 3, MgO, CaO, Na 2 O, K 2 O Examples of the processing member include metal oxides such as CeO ₂ , ceramics such as SiC, SiN, and Al ₂ O ₃ , and constituent materials made of them. Furthermore, as a workpiece, diamond related materials such as diamond, polycrystalline diamond, CVD diamond, DLC film, etc., hard and brittle materials such as SiC, GaN, sapphire, SiC ceramics, Si ₃ N ₄ ceramics, AIN, glass, etc. It can be mentioned.

Further, in order to achieve the above object, according to the processing method of the present invention, a processed member made of a metal oxide is brought into contact with a workpiece, ozone gas is supplied to the contact portion, and the processed member is And a step of displacing the workpiece in a state of being in contact with the workpiece, wherein the workpiece is made of any one of alumina ceramics or glass mainly composed of SiO ₂ , and the workpiece is made of GaN. It is configured.

  Here, the contact portion can be placed in the ozone gas environment by bringing the processing member into contact with the workpiece and supplying the ozone gas to the contact portion. That is, although ozone gas is an unstable molecule, it becomes possible to localize ozone gas in the same field by supplying ozone gas to a contact part.

  Further, it is possible to generate frictional heat at the contact portion by the step of displacing the processing member in a state of being in contact with the workpiece. The frictional heat thermally decomposes the supplied ozone gas to generate atomic oxygen from the ozone gas. The generated atomic oxygen is a bond such as a carboxyl group to a hydroxyl group (OH group) on the outermost surface of the processed member responsible for the chemical reaction (processing) with the workpiece under the atmospheric environment, ie, contamination derived from organic matter Suppress the nation. Stable physical and chemical processing of the processed material is achieved by hydrophilization that atomic oxygen decomposes and cleans the dirt derived from organic matter and exposes hydroxyl groups (OH groups) on the surface of the processing member It becomes possible.

  Further, as described above, since the contact site is under the ozone gas environment, it is possible to secure atomic oxygen necessary for stable processing.

  In the present invention, the atomic oxygen generated by the thermal decomposition of the ozone gas is utilized at the contact site of the workpiece and the workpiece, that is, at the position where the workpiece is to be machined, to clean and hydrophilicize the surface of the workpiece. Treatment to realize physically and chemically stable processing of the workpiece.

In addition, since the processing member is made of any one of alumina ceramics or glass mainly composed of SiO ₂ and the workpiece is made of GaN, it is possible to perform sufficiently stable processing on GaN. .

  In addition, when the ozone gas contains alkaline electrolyzed water, it promotes tribochemical reaction that occurs on the friction surface between the workpiece and the workpiece to form an oxide on the workpiece surface of the workpiece, which is then removed preferentially. It will be possible. As a result, in addition to processing using atomic oxygen generated by thermal decomposition of ozone gas, processing by tribochemical reaction is promoted, accuracy of surface roughness can be further enhanced, and processing efficiency can be improved. In addition, an alkaline solution here is a solution which shows alkalinity, such as alkaline electrolyzed water, NaOH, KOH, for example.

Moreover, it becomes possible to accelerate tribochemical reaction by ozone gas containing alkaline electrolyzed water. By the tribochemical reaction, a reaction shown by the following reaction formula occurs, and processing with high accuracy and high processing efficiency can be performed on GaN.
₂ GaN + 3 H ₂ O ⇔ Ga ₂ O ₃ + 2 NH ₃
In addition, alkaline electrolyzed water has high safety during handling and can be generated relatively easily, so the processing method can be made safer and simpler. In addition, alkaline electrolyzed water here means alkaline water whose pH is 9.0 or more.

[About processing equipment]
Further, in order to achieve the above object, a processing apparatus according to the present invention comprises a processing member made of metal oxide, a holding mechanism for holding a predetermined workpiece in contact with the processing member, and a processing member And the ozone gas supply part which supplies ozone gas to a contact part with a to-be-processed object, The drive part which displaces a processing member in the state which made the processing member and the to-be-processed object contact.

  Here, the contact portion is kept in the ozone gas environment by the holding mechanism for holding the predetermined workpiece in contact with the processing member and the ozone gas supply unit for supplying the ozone gas to the contact portion with the processing member and the workpiece. Can. That is, although ozone gas is an unstable molecule, it becomes possible to localize ozone gas in the same field by supplying ozone gas to a contact part.

  Moreover, it becomes possible to generate frictional heat in a contact site | part by the drive part which displaces a process member in the state which contacted the process member and the to-be-processed object. The frictional heat thermally decomposes the supplied ozone gas to generate atomic oxygen from the ozone gas. The generated atomic oxygen is a bond such as a carboxyl group to a hydroxyl group (OH group) on the outermost surface of the processed member responsible for the chemical reaction (processing) with the workpiece under the atmospheric environment, ie, contamination derived from organic matter Suppress the nation. Stable physical and chemical processing of the processed material is achieved by hydrophilization that atomic oxygen decomposes and cleans the dirt derived from organic matter and exposes hydroxyl groups (OH groups) on the surface of the processing member It becomes possible.

  Further, as described above, since the contact site is under the ozone gas environment, it is possible to secure atomic oxygen necessary for stable processing.

  In the present invention, the surface oxygen of the workpiece is used to clean the surface of the workpiece and make it hydrophilic by utilizing atomic oxygen generated by the thermal decomposition of ozone at the contact portion between the workpiece and the workpiece, ie, the position where the workpiece is processed. Treatment to realize physically and chemically stable processing of the workpiece.

Further, the processing member, sapphire single crystal state consisting of Al ₂ O _3, corundum, sapphire glass, sapphire crystal, polycrystalline state alumina, alumina ceramics, one of the glass as a main component SiO ₂ 1 In the case where the workpiece is made of one of diamond, polycrystalline diamond, CVD diamond, and DLC film, sufficiently stable processing of the workpiece is possible.

Further, when the processing member is made of glass containing SiO ₂ as the main component and the workpiece is made of SiC, sufficiently stable processing with respect to SiC becomes possible.

  Further, in the case of humidifying at least one of the processing member or the workpiece, the processing can be further stabilized, the accuracy of the surface roughness can be further enhanced, and the processing efficiency can be improved.

  In addition, when the ozone gas contains an alkaline solution, the tribochemical reaction occurring on the friction surface between the workpiece and the workpiece can be promoted to form an oxide on the workpiece surface of the workpiece to be removed preferentially. It becomes a thing. As a result, in addition to processing using atomic oxygen generated by thermal decomposition of ozone gas, processing by tribochemical reaction is promoted, accuracy of surface roughness can be further enhanced, and processing efficiency can be improved. In addition, an alkaline solution here is a solution which shows alkalinity, such as alkaline electrolyzed water, NaOH, KOH, for example.

  Moreover, when an alkaline solution is alkaline electrolyzed water, it becomes possible to accelerate a tribochemical reaction by ozone gas containing alkaline electrolyzed water. In addition, alkaline electrolyzed water has high safety during handling and can be generated relatively easily, so the processing method can be made safer and simpler. In addition, alkaline electrolyzed water here means alkaline water whose pH is 9.0 or more.

In addition, when at least one of cation and anion is supplied to at least one of the workpiece and the workpiece to control the charge amount, the charged state of the surface of the workpiece and the workpiece is determined. Stabilize.
Then, by relatively displacing the workpiece in a state in which the workpiece is in contact with the processing member whose charged state on the surface is stabilized, the charging status of the surfaces of the workpiece and the workpiece is controlled and then the workpiece is processed. The surface can be physically and chemically processed.

In addition, when the amount of charge is controlled by supplying N ₂ gas to the contact portion between the processing member and the workpiece, it becomes easier to control the charging state of the surface of the processing member and the workpiece, and the surface is roughened. The accuracy of the threading can be further enhanced, and the processing efficiency can be further enhanced.

  In the present invention, the surface oxygen of the workpiece is used to clean the surface of the workpiece and make it hydrophilic by utilizing atomic oxygen generated by the thermal decomposition of ozone at the contact portion between the workpiece and the workpiece, ie, the position where the workpiece is processed. Treatment to realize physically and chemically stable processing of the workpiece. Therefore, abrasive-free polishing can be realized. Further, since it is sufficient to install an apparatus for supplying ozone to the contact portion between the processing member of the existing processing apparatus and the workpiece, the processing system can be easily constructed.

As "processing member", for example, iron, nickel, metal such as _{Co, SiO 2, ZrO 2, Al} 2 O 3, TiO 2, Fe 2 O 3, MgO, CaO, Na 2 O, K 2 O And inorganic oxides such as CeO ₂ , ceramics such as SiC, SiN, Al ₂ O _{3 and the} like, and processed members made of constituent materials made of them. Furthermore, as a workpiece, diamond related materials such as diamond, polycrystalline diamond, CVD diamond, DLC film, etc., hard and brittle materials such as SiC, GaN, sapphire, SiC ceramics, Si ₃ N ₄ ceramics, AIN, glass, etc. It can be mentioned.

Further, in order to achieve the above object, a processing apparatus according to the present invention comprises a processing member made of metal oxide, a holding mechanism for holding a predetermined workpiece in contact with the processing member, a processing member and ozone gas supply unit for supplying ozone gas to the contact portion of the workpiece, while contacting the workpiece and the workpiece, and a drive unit for displacing the workpiece, the workpiece is alumina ceramics or SiO ₂ The workpiece is made of GaN, and the workpiece is made of GaN.

  Here, the contact portion is kept in the ozone gas environment by the holding mechanism for holding the predetermined workpiece in contact with the processing member and the ozone gas supply unit for supplying the ozone gas to the contact portion with the processing member and the workpiece. Can. That is, although ozone gas is an unstable molecule, it becomes possible to localize ozone gas in the same field by supplying ozone gas to a contact part.

  Moreover, it becomes possible to generate frictional heat in a contact site | part by the drive part which displaces a process member in the state which contacted the process member and the to-be-processed object. The frictional heat thermally decomposes the supplied ozone gas to generate atomic oxygen from the ozone gas. The generated atomic oxygen is a bond such as a carboxyl group to a hydroxyl group (OH group) on the outermost surface of the processed member responsible for the chemical reaction (processing) with the workpiece under the atmospheric environment, ie, contamination derived from organic matter Suppress the nation. Stable physical and chemical processing of the processed material is achieved by hydrophilization that atomic oxygen decomposes and cleans the dirt derived from organic matter and exposes hydroxyl groups (OH groups) on the surface of the processing member It becomes possible.

  Further, as described above, since the contact site is under the ozone gas environment, it is possible to secure atomic oxygen necessary for stable processing.

  In the present invention, the surface oxygen of the workpiece is used to clean the surface of the workpiece and make it hydrophilic by utilizing atomic oxygen generated by the thermal decomposition of ozone at the contact portion between the workpiece and the workpiece, ie, the position where the workpiece is processed. Treatment to realize physically and chemically stable processing of the workpiece.

In addition, since the processing member is made of any one of alumina ceramics or glass mainly composed of SiO ₂ and the workpiece is made of GaN, it is possible to perform sufficiently stable processing on GaN. .

  In addition, when the ozone gas contains alkaline electrolyzed water, it promotes tribochemical reaction that occurs on the friction surface between the workpiece and the workpiece to form an oxide on the workpiece surface of the workpiece, which is then removed preferentially. It will be possible. As a result, in addition to processing using atomic oxygen generated by thermal decomposition of ozone gas, processing by tribochemical reaction is promoted, accuracy of surface roughness can be further enhanced, and processing efficiency can be improved. In addition, an alkaline solution here is a solution which shows alkalinity, such as alkaline electrolyzed water, NaOH, KOH, for example.

Moreover, it becomes possible to accelerate tribochemical reaction by ozone gas containing alkaline electrolyzed water. By the tribochemical reaction, a reaction shown by the following reaction formula occurs, and processing with high accuracy and high processing efficiency can be performed on GaN.
₂ GaN + 3 H ₂ O ⇔ Ga ₂ O ₃ + 2 NH ₃
In addition, alkaline electrolyzed water has high safety during handling and can be generated relatively easily, so the processing method can be made safer and simpler. In addition, alkaline electrolyzed water here means alkaline water whose pH is 9.0 or more.

[About processing method]
In order to achieve the above object, according to the processing method of the present invention, at least one of a cation or an anion is supplied to at least one of a workpiece or a workpiece to be processed by the workpiece. And controlling the amount of charge and relatively displacing the workpiece and the workpiece in contact with each other.

Here, the charged state of the surfaces of the workpiece and the workpiece is controlled by supplying at least one of the cation or the anion to at least one of the workpiece and the workpiece to control the charge amount. Stabilize.
Then, by relatively displacing the workpiece in a state in which the workpiece is in contact with the processing member whose charged state on the surface is stabilized, the charging status of the surfaces of the workpiece and the workpiece is controlled and then the workpiece is processed. The surface can be physically and chemically processed.

  In the present invention, at least one of a cation and an anion is supplied to at least one of the workpiece and the workpiece to control the charge state of the surface of the workpiece and the workpiece, and the surface roughness is provided. The processing accuracy is high, and the processing efficiency is improved.

  In addition, negative ions can be supplied to at least one of the workpiece and the workpiece to control the charged state of the surfaces of the workpiece and the workpiece, and the surface of the workpiece can be processed.

  Further, cations can be supplied to at least one of the processing member or the workpiece to control the charged state of the surfaces of the processing member and the workpiece, and the surface of the workpiece can be processed.

  In addition, anions and cations can be supplied to at least one of the workpiece and the workpiece to control the charged state of the surfaces of the workpiece and the workpiece, and the surface of the workpiece can be processed. .

  In addition, in the case of humidifying at least one of the workpiece and the workpiece, it becomes easier to control the charged state, and the accuracy of the surface roughness can be further enhanced and the processing efficiency can be further enhanced. it can.

  In addition, when the surface of the processing member is irradiated with ultraviolet light or plasma to clean and hydrophilize the surface of the processing member, it becomes easier to control the charged state of the surface of the processing member and the workpiece. The accuracy of the surface roughness can be further enhanced and the processing efficiency can be further enhanced.

In addition, when N ₂ gas is supplied to the contact portion of the workpiece and the workpiece, the charged state of the surface of the workpiece and the workpiece can be further easily controlled, and the accuracy of the surface roughness can be further enhanced. And, processing efficiency can be further improved.

  In the present invention, the charged state of the surface of the workpiece and the workpiece is controlled by supplying at least one of the cation or the anion to at least one of the workpiece or the workpiece, thereby controlling the workpiece The surface of the workpiece is physically and chemically processed while controlling the charged state of the surface of the workpiece and the workpiece by displacing the workpiece while the workpiece is in contact with the outermost surface portion of the workpiece. To achieve Therefore, stable processing is possible only by supplying at least one of positive ions or negative ions, as compared to a general ultraviolet light source.

As "processing member", for example, iron, nickel, metal such as _{Co, SiO 2, ZrO 2, Al} 2 O 3, TiO 2, Fe 2 O 3, MgO, CaO, Na 2 O, K 2 O And inorganic oxides such as CeO ₂ , ceramics such as SiC, SiN, Al ₂ O _{3 and the} like, and processed members made of constituent materials made of them. Furthermore, as a workpiece, diamond related materials such as diamond, polycrystalline diamond, CVD diamond, DLC film, etc., hard and brittle materials such as SiC, GaN, sapphire, SiC ceramics, Si ₃ N ₄ ceramics, AIN, glass, etc. It can be mentioned.

[About processing equipment]
Further, in order to achieve the above object, a processing apparatus according to the present invention is a processing member and at least one of the processing member and a workpiece to be processed by the processing member, a cation or an anion. The same as the processing member in a state in which at least one of the ions is supplied to control a charge amount, a holding mechanism for holding a predetermined workpiece, and the processing member and the workpiece are in contact with each other. And a drive unit for relatively displacing the workpiece.

  Here, at least one of the processing member and the processing member or the workpiece to be processed by the processing member is supplied with at least one of a cation or an anion to control the charge amount, It stabilizes the charged state of the surface of the processing member and the workpiece.

  Further, the processing member and the holding mechanism for holding a predetermined workpiece, and the driving member for relatively displacing the processing member and the workpiece in a state where the processing member and the workpiece are in contact with each other The surface of the object to be processed can be physically and chemically processed while the charged state of the surface of the object to be processed is stabilized.

  In the present invention, at least one of positive ions or negative ions is supplied to at least one of the workpiece and the workpiece at the charging portion to control the charged state of the surfaces of the workpiece and the workpiece. It is possible to realize processing with high accuracy of surface roughness and improved processing efficiency.

  In addition, in the case of including a humidification processing unit that humidifies at least one of a processing member or a workpiece, it becomes easier to control the charged state further, the accuracy of surface roughness is further enhanced, and processing efficiency is improved. It can be further improved.

  In addition, in the case of including a cleaning and hydrophilization treatment portion that hydrophilizes the surface of the processing member, the charged state of the surface of the processing member and the workpiece can be further easily controlled, and the surface roughness accuracy can be further enhanced. It is possible to enhance the processing efficiency further.

In addition, when the N ₂ gas supply unit for supplying N ₂ gas to the contact portion of the processing member and the workpiece is provided, the charged state of the surface of the processing member and the workpiece can be further controlled more easily. The accuracy of the above can be further enhanced, and the processing efficiency can be further enhanced.

  In the present invention, the charged state of the surfaces of the workpiece and the workpiece is controlled by a charge processing unit that supplies at least one of the cation and the anion to at least one of the workpiece and the workpiece. The surface of the workpiece is physically and chemically controlled while the charged state of the surfaces of the workpiece and the workpiece is controlled by a drive unit that displaces the workpiece in a state in which the workpiece is in contact with the outermost surface of the workpiece. Processing is realized. Further, since it is only necessary to replace the ultraviolet light source of the existing processing device with a charging device or the like, the processing system can be easily constructed.

  In the processing method and the processing apparatus to which the present invention is applied, high efficiency and high accuracy processing can be realized with dry polishing for processing a diamond or the like while having a simple configuration.

It is a schematic diagram for demonstrating the processing apparatus to which this invention is applied. It is the data which measured the surface roughness of a part of process area of comparative example 1 with a non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area of comparative example 2 with a non-contact shape measuring machine. It is the data which measured the surface coarseness of a part of processing field of Example 1 with a non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area of comparative example 3 with a non-contact shape measuring machine. It is the data which measured the surface coarseness of a part of process area of Example 2 with a non-contact profile measuring machine. It is the data which measured the surface roughness of a part of process area of comparative example 4 with a non-contact shape measuring machine. It is the data which measured the surface coarseness of a part of process area of Example 3 with a non-contact shape measuring machine. It is the data which measured the surface coarseness of a part of processing field before processing of Example 4 with a non-contact shape measuring machine. It is the data which measured the surface coarseness of a part of processing field after processing of Example 4 with a non-contact shape measuring machine. It is a schematic diagram for demonstrating the processing apparatus to which this invention is applied. It is a schematic diagram for demonstrating the processing apparatus to which this invention is applied. It is the data which measured the surface roughness of a part of process area of comparative example 5 with a non-contact shape measuring machine. It is the data which measured the surface coarseness of a part of processing field of Example 5 with a non-contact shape measuring machine. It is the data which measured the surface coarseness of a part of processing field of comparative example 8 with a non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area of Example 7 with a non-contact shape measuring machine. 15 is a graph showing the relationship between the surface potential and the processing time of Example 9. 21 is a graph showing the relationship between surface potential and processing time in Example 10. 15 is a graph showing the relationship between the surface potential and the processing time of Example 11. It is a graph which shows the surface potential of comparative example 11, and the relation of processing time. It is the data which measured the surface coarseness of a part of processing field of Example 9 with a non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area of Example 10 with a non-contact profile measuring machine. It is the data which measured the surface coarseness of a part of processing field of Example 11 with a non-contact shape measuring machine. It is the data which measured the surface roughness of a part of process area of comparative example 11 with a non-contact shape measuring machine.

First Embodiment of the Invention
Hereinafter, modes for carrying out the present invention (hereinafter, referred to as “first embodiment of the invention”) will be described.
FIG. 1 is a schematic view for explaining a processing apparatus to which the present invention is applied. The processing apparatus 1 shown here has a sapphire surface plate 2 and a sample holder 4 for holding a single crystal diamond 3. The processing apparatus 1 further includes an ozone supply unit 5 that supplies ozone gas to the contact portion between the sapphire platen 2 and the single crystal diamond 3. The single crystal diamond 4 is an example of a workpiece.

  In addition, the single-crystal diamond 3 which is a to-be-processed object touches the upper surface (upper surface of FIG. 1) of the sapphire surface plate 2, and a to-be-processed object will be grind | polished. The sapphire base 2 is an example of a processing member.

  The ozone supply unit 5 is disposed above the sapphire surface plate 2. Further, the tip of the ozone supply unit 5, that is, the portion from which the ozone gas is discharged is directed to the contact portion between the sapphire platen 2 and the single crystal diamond 3. As a result, the contact site is in the ozone environment. Further, due to the frictional heat generated between the sapphire surface plate 2 and the single crystal diamond 3 at the contact portion, the ozone gas is thermally decomposed into atomic oxygen, and the workpiece is stably processed.

Here, in the present embodiment, although the case where the processing member is formed of the sapphire surface plate 2 is described as an example, any material capable of processing a workpiece is sufficient. It does not necessarily have to be formed on the sapphire surface plate 2. For example, metals such as iron, nickel and Co, inorganic oxides such as SiO ₂ , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, K ₂ O, CeO _{2 and the} like It may be formed of ceramics such as SiC, SiN, Al ₂ O _{3 and the} like, and constituent materials made of them.

  Further, the sapphire base 2 is fixed on a processing table 6 whose rotational speed can be controlled, and the sapphire base 2 is configured to be rotatable in a direction indicated by a symbol A in FIG. 1 by rotation of the processing table 6.

  In addition, the sample holder 4 is configured to be rotatable in a direction indicated by symbol B in FIG. 1 around the rotation axis 7 eccentric to the rotation axis of the sapphire surface plate 2, and a state in which the single crystal diamond 3 is held. Then, it descends from the upper side to a position s where the single crystal diamond 3 and the sapphire surface plate 2 are in contact with each other. In addition, the code | symbol Y in the figure has shown the direction which applies a load.

Here, in the present embodiment, the single crystal diamond 3 is described as an example of the workpiece to be held by the sample holder 4, but the workpiece is limited to the single crystal diamond 3. Instead, diamond related materials such as diamond, polycrystalline diamond, CVD diamond, DLC film, etc., SiC, GaN, sapphire, SiC ceramics, Si ₃ N ₄ ceramics, AIN, hard brittle materials such as glass, etc. may be used.

  Hereinafter, a processing method using the processing apparatus 1 configured as described above will be described. That is, an example of a processing method to which the present invention is applied will be described.

  In an example of the processing method to which the present invention is applied, ozone gas is supplied from the ozone supply unit 5 to the contact portion between the sapphire platen 2 and the single crystal diamond 3 while rotating the sapphire platen 2.

  That is, while the ozone gas is supplied to the contact portion between the sapphire base 2 and the single crystal diamond 3, the frictional heat generated at the contact portion thermally decomposes the ozone gas to generate atomic oxygen. The generated atomic oxygen cleans and hydrophilizes the surface of the sapphire platen 2. That is, the surface of the sapphire base 2 is modified.

  Then, the surface of the single crystal diamond 3 is physically and chemically removed by rotating the sapphire base 2 while the single crystal diamond 3 is in contact with the upper surface of the sapphire base 2 in a state where the surface is modified. It becomes.

  As a modified example of the present embodiment, a device in which a humidification processing unit is further provided in the device configuration shown in FIG. 1 can be adopted. The humidification processing unit is installed above the processing member. The humidification processing unit is a member that humidifies the surface of the processing member. Also, a method of supplying ozone gas to which water is added to the contact portion of the sapphire surface plate 2 and the single crystal diamond 3 may be employed. By humidifying, the processing to a to-be-processed object can be stabilized further.

  As a further modification of the present embodiment, also a method of supplying alkaline ozone water to the contact portion between the processing member and the workpiece by including alkaline electrolyzed water (pH 9.0 or higher) in ozone gas supplied from the ozone supply unit It can be adopted.

  When the ozone gas contains alkaline electrolyzed water, it promotes tribochemical reaction generated on the friction surface between the workpiece and the workpiece to form an oxide on the workpiece surface of the workpiece, which can be removed preferentially. Become. As a result, in addition to processing using atomic oxygen generated by thermal decomposition of ozone gas, processing by tribochemical reaction is promoted, accuracy of surface roughness can be further enhanced, and processing efficiency can be improved.

  Here, the solution to be contained in the ozone gas may be an alkaline solution, and is not limited to alkaline electrolyzed water. For example, it is also possible to make alkaline gas, such as NaOH and KOH, contain in ozone gas, and to utilize for processing.

[effect]
A processing method and a processing apparatus to which the present invention is applied utilizes atomic oxygen generated by the thermal decomposition of ozone at a contact portion between a processing member and a workpiece, that is, at a position where processing of the workpiece is performed. Therefore, the surface of the processing member can be processed more uniformly, as compared with an apparatus that emits ultraviolet light. As a result, more stable and high processing accuracy can be realized.

  Moreover, the processing apparatus to which the present invention is applied can be easily constructed only by arranging the ozone supply unit in the existing apparatus.

  Furthermore, since the processing method and the processing apparatus to which the present invention is applied do not use abrasive grains, it is not necessary to perform abrasive grain processing after processing.

Further, in the case of processing using abrasive grains, it is necessary to supply the abrasive grains in a slurry state, the processed member and the workpiece become wet with the slurry, and the temperature hardly rises and the processing proceeds hard.
On the other hand, in the processing method to which the present invention is applied, the slurry is not supplied because the abrasive grains are not used, and the processed member and the workpiece are in a dry state, and the temperature rises including the frictional heat. It is easy to proceed with chemical reaction. That is, highly accurate and highly efficient processing of difficult-to-process materials can be realized.

  Hereinafter, Examples and Comparative Examples of the present invention will be described. The embodiment shown here is an example and does not limit the present invention.

Example 1 and Comparative Examples 1 and 2
As a processing method of Example 1 of the present invention, processing was performed under the following conditions. First, as a processing method according to Example 1 of the present invention, a single crystal diamond (3 mm × 3 mm) is pressed against a sapphire platen as a workpiece with a load of ² kg (22.2 kg / cm ² ) to rotate the sapphire platen. The sample holder was rotated at 1000 rpm while rotating under conditions of several 250 rpm, a swing distance of 3 mm, and a swing speed of 0.1 mm / s. Further, ozone gas (5 L / min) was supplied from the ozone supply unit to the contact portion between the sapphire surface plate and the single crystal diamond. Processing was performed for 1.5 hours in this situation.
The same method as in Example 1 except that ozone supply was not performed by the ozone supply unit was referred to as Comparative Example 1.
In addition, an ultraviolet light source is further installed in the apparatus configuration of the processing method of Example 1 described above, and ozone is irradiated while irradiating ultraviolet light (172 nm) under the condition of the irradiation intensity of 6 mW / cm ² from above on the sapphire base plate. The thing which does not perform ozone supply by a supply part was set as the comparative example 2. FIG.
About the said Example 1 and Comparative Examples 1-2, the surface roughness of the single-crystal diamond after processing was measured with a non-contact shape measuring machine, and evaluation was performed.

  The results of Comparative Example 1 are shown in FIG. 2, the results of Comparative Example 2 in FIG. 3, and the results of Example 1 in FIG.

As apparent from FIGS. 2 and 4, compared to the processing surface of the workpiece of Comparative Example 1, the processing surface of the workpiece is processed with high accuracy by the processing of Example 1, and in the measurement range of the processing surface The value of arithmetic mean roughness (Ra) was 0.119 nm, and it was found that it was processed smoothly. The value of arithmetic mean roughness (Ra) of Comparative Example 1 was 2.213 nm.
Further, as is apparent from FIGS. 3 and 4, it is understood that the machined surface of the workpiece is machined with higher accuracy by the machining of Example 1 as compared with the machined surface of the workpiece of Comparative Example 2 The
In addition, the value of arithmetic mean roughness (Ra) in the measurement range of the to-be-processed surface of the comparative example 2 was 0.177 nm.

(1) About processing efficiency About the processing efficiency by the processing method of Example 1 and comparative examples 1-2 mentioned above, it confirmed by the following contents.
A groove having a predetermined depth was formed in a single crystal diamond to be processed, and the machining efficiency was calculated from the amount of change in groove depth before and after machining.

The processing efficiency in Example 1 was 2453.5 nm / h, indicating a sufficient processing efficiency.
On the other hand, the processing efficiency in Comparative Example 1 was 33.3 nm / h. Moreover, the processing efficiency in the comparative example 2 was 238.1 nm / h.

(2) Surface Roughness of Machining Surface of Workpiece [Example 2 and Comparative Example 3]
As a processing method of Example 2 of the present invention, processing was performed under the following conditions. First, as a processing method of Example 2 of the present invention, a soda lime glass (soda-lime glass) surface plate is subjected to a load of 3 kg of a SiC substrate (Single-crystal 4H-SiC 4 ° off) (2 inches) as a workpiece. The sample holder was rotated at 30 rpm while the soda lime glass platen was rotated at a rotational speed of 200 rpm, a swing distance of 6 mm, and a swing speed of 0.1 mm / s. Further, an ultraviolet light source was installed, and ultraviolet light (172 nm) was irradiated from above onto the soda lime glass base plate under the condition of the irradiation intensity of 6 mW / cm ² . Moreover, ozone gas (5 L / min) was supplied to the contact part of soda-lime-glass surface plate and a SiC board | substrate from the ozone supply part. Processing was performed for 2 hours in this situation. Incidentally, soda lime glass is an example of a glass composed mainly of SiO _2.
The same sample before carrying out the processing method of Example 2 was machine-polished using diamond abrasives to provide Comparative Example 3.
About the said Example 2 and Comparative Example 3, the surface roughness of the processed SiC substrate was measured with a non-contact shape measuring machine, and evaluation was performed.

  The result of Comparative Example 3 is shown in FIG. 5 and the result of Example 2 is shown in FIG.

  As apparent from FIGS. 5 and 6, the machining surface of the workpiece is processed with high accuracy by the processing of Example 2 as compared with the machining surface of the workpiece of Comparative Example 3, and the measurement range of the workpiece surface is obtained. The value of arithmetic mean roughness (Ra) was 0.311 nm, and it was found that it was processed smoothly. The value of arithmetic mean roughness (Ra) of Comparative Example 3 was 1.601 nm.

(3) Processing Efficiency Regarding the processing efficiency according to the processing method of Example 2 and Comparative Example 3 described above, the processing efficiency was calculated with the same contents as the above (2).

  The processing efficiency in Example 2 was 201.3 nm / h, while the processing efficiency in Comparative Example 3 was 72.26 nm / h.

(4) Surface Roughness of Machining Surface of Workpiece [Example 3 and Comparative Example 4]
As the processing method of Example 3 of the present invention, processing was performed under the following conditions. First, as a processing method of Example 3 of the present invention, a GaN substrate (10 mm × 10 mm) is pressed with a load of 250 g (250 g / cm ² ) as a workpiece on an alumina ceramic platen, and the alumina ceramic platen is rotated The sample holder was rotated at 250 rpm while rotating at 250 rpm, a rocking distance of 10 mm, and a rocking speed of 0.5 mm / s. In addition, ozone gas (5 L / min) was supplied from the ozone supply unit to the contact portion between the alumina ceramic surface plate and the GaN substrate. Processing was performed for one hour in this situation.
The same sample before carrying out the processing method of Example 3 was machine-polished using diamond abrasives to provide Comparative Example 4.
The surface roughness of the processed GaN substrate of the above-described Example 3 and Comparative Example 4 was measured by a non-contact shape measuring machine and evaluated.

  The result of Comparative Example 4 is shown in FIG. 7 and the result of Example 3 is shown in FIG.

  As apparent from FIGS. 7 and 8, the machining surface of the workpiece is processed with high accuracy by the processing of Example 3 as compared with the machining surface of the workpiece of Comparative Example 4, and the measurement range of the processing surface is obtained. The value of arithmetic mean roughness (Ra) was 0.483 nm, and it turned out that it processed smoothly. The value of arithmetic mean roughness (Ra) of Comparative Example 4 was 2.837 nm.

Example 4
As the processing method of Example 4 of the present invention, processing was performed under the following conditions. First, as a processing method according to the fourth embodiment of the present invention, GaN (gallium nitride) (10 mm × 10 mm) is pressed against a glass platen as a workpiece with a load of 0.5 kg, and the glass platen is rotated at 200 rpm. The sample holder was rotated at 31.25 rpm while rotating under conditions of a moving distance of 3 mm and a rocking speed of 0.1 mm / s. Further, ozone gas (5 L / min) containing alkaline electrolyzed water of pH 9.4 was supplied from the ozone supply unit to the contact portion between the glass platen and the GaN. Processing was performed for one hour in this situation.
In Example 4 described above, the surface roughness of GaN before and after processing was measured by a non-contact shape measuring machine and evaluated.

  The result before processing is shown in FIG. 9, and the result after processing is shown in FIG.

  As is apparent from FIGS. 9 and 10, the machining surface of the workpiece before machining is machined with high accuracy by the machining of Example 4, and the value of the arithmetic average roughness (Ra) in the measurement range of the machining surface is It was found to be 0.176 nm and processed smoothly. The value of arithmetic mean roughness (Ra) in the measurement range of the to-be-processed surface before processing was 0.922 nm. In addition, the processing efficiency in Example 4 was 2979 nm / h, indicating a sufficient processing efficiency.

Second Embodiment of the Invention
Hereinafter, modes for carrying out the present invention (hereinafter, referred to as “second embodiment of the invention”) will be described.
FIG. 11 is a schematic view for explaining a processing apparatus to which the present invention is applied, and the processing apparatus 11 shown here is a charge that changes the charge amount of the insulating synthetic quartz platen 12 and the synthetic quartz platen 12. It has a unit 13 and a sample holder 15 for holding an insulating single crystal diamond 14. The charging unit 13 is an example of a charging processing unit, and the single crystal diamond 14 is an example of a workpiece.

  In addition, the single crystal diamond 14 which is a workpiece is in contact with the upper surface (upper surface in FIG. 11) of the synthetic quartz surface plate 12, and the workpiece is polished. The synthetic quartz surface plate 12 is an example of a processing member.

  The charging unit 13 is disposed above the synthetic quartz platen 12 and supplies positive ions or negative ions to the upper surface of the synthetic quartz platen 12 to forcibly control the charge amount of the synthetic quartz platen 12 from the outside. . By controlling the charge amount, the surface of the synthetic quartz surface plate 12 is modified, and the work piece is polished by the action of the electrochemical action by contacting the single crystal diamond 14.

Here, in the present embodiment, the case where the processing member is formed of the insulating synthetic quartz surface plate 12 is described as an example, but the charge amount can be controlled by the charging unit 13 The material is sufficient, and it does not have to be formed of the insulating synthetic quartz surface plate 12. For example, metals such as iron, nickel and Co, inorganic oxides such as SiO ₂ , ZrO ₂ , Al ₂ O ₃ , TiO _2, Fe ₂ O ₃ , MgO, CaO, Na ₂ O, K ₂ O, CeO _{2 and the} like It may be formed of ceramics such as SiC, SiN, Al ₂ O _{3 and the} like, and constituent materials made of them.

  Further, the synthetic quartz surface plate 12 is fixed on a processing table 16 whose rotational speed can be controlled, and the synthetic quartz surface plate 12 is configured to be rotatable in a direction indicated by a symbol A in FIG. There is.

  Further, the sample holder 15 is configured to be rotatable in a direction indicated by a symbol B in FIG. 11 centering on the rotating shaft 17 eccentric to the rotating shaft of the synthetic quartz surface plate 12, and holds the single crystal diamond 14. In the state, it descends from the upper side to a position where the single crystal diamond 14 and the synthetic quartz surface plate 12 are in contact. In addition, the code | symbol Y in the figure has shown the direction which applies a load.

Here, in the present embodiment, the single crystal diamond 14 is described as an example of the workpiece to be held by the sample holder 15, but the workpiece is limited to the single crystal diamond 14. Instead, diamond related materials such as diamond, polycrystalline diamond, CVD diamond, DLC film, etc., SiC, GaN, sapphire, SiC ceramics, Si ₃ N ₄ ceramics, AIN, hard brittle materials such as glass, etc. may be used.

  Hereinafter, a processing method using the processing apparatus 11 configured as described above will be described. That is, an example of a processing method to which the present invention is applied will be described.

  In one example of the processing method to which the present invention is applied, cations or anions are supplied from the charging unit 13 to the synthetic quartz platen 12 while the synthetic quartz platen 12 is rotated.

  That is, by supplying cations or anions to the upper surface of the synthetic quartz platen 12, the charge amount of the surface of the synthetic quartz platen 12 is controlled to modify the surface.

  Then, the surface of the single crystal diamond 14 is physically and chemically removed by the rotation of the synthetic quartz plate 12 in a state where the single crystal diamond 14 is in contact with the upper surface of the synthetic quartz plate 12 with the surface modified. It will be done.

  The configuration of the processing apparatus shown in FIG. 12 can also be adopted as a modification (1) of the present embodiment. In the processing apparatus 18 shown in FIG. 12, an ultraviolet light source 19 is further installed in the configuration of the processing apparatus 11 shown in FIG. 11 described above.

  The ultraviolet light source 19 is disposed above the synthetic quartz platen 12 and at a position different from that of the charging unit 13, and irradiates the upper surface of the synthetic quartz platen 12 with ultraviolet light.

  In the processing method of the modification (1) of the present embodiment, the positive or negative ion is supplied from the charging unit 13 to the synthetic quartz platen 12 while the synthetic quartz platen 12 is rotated, and the ultraviolet light source 19 is further provided. It emits ultraviolet light from

  That is, by irradiating the upper surface of the synthetic quartz platen 12 with ultraviolet light, the surface of the synthetic quartz platen 12 is cleaned and hydrophilized. Specifically, the reaction site with the atoms of the surface of the single crystal diamond 14 is increased by exposing the OH group to the outermost surface portion of the synthetic quartz surface plate 12 by irradiating ultraviolet light.

  Then, when the upper surface of the synthetic quartz surface plate 12 in a state where the reaction site is increased contacts the single crystal diamond 14 and the synthetic quartz surface plate 12 rotates, the reaction site and the atoms of the surface of the single crystal diamond 14 are chemically reacted. To physically and chemically remove the surface of the diamond substrate. That is, the electrochemical efficiency by controlling the charge amount and the effect by the ultraviolet light irradiation are also added, and the processing efficiency can be further improved.

  Further, in the processing method to which the present invention is applied, a method of enhancing processing efficiency by adding conditions for humidifying the processing member may be adopted.

[effect]
The processing apparatus to which the present invention is applied can be easily constructed only by arranging the charging unit in the existing apparatus.

  Furthermore, since the processing method and the processing apparatus to which the present invention is applied do not use abrasive grains, it is not necessary to perform abrasive grain processing after processing.

Further, in the case of processing using abrasive grains, it is necessary to supply the abrasive grains in a slurry state, the processed member and the workpiece become wet with the slurry, and the temperature hardly rises and the processing proceeds hard.
On the other hand, in the processing method to which the present invention is applied, the slurry is not supplied because the abrasive grains are not used, and the processed member and the workpiece are in a dry state, and the temperature rises including the frictional heat. It is easy to proceed with chemical reaction. That is, highly accurate and highly efficient processing of difficult-to-process materials can be realized.

  Hereinafter, Examples and Comparative Examples of the present invention will be described. The embodiment shown here is an example and does not limit the present invention.

(5) Surface Roughness of Processed Surface of Workpiece [Examples 5 to 7 and Comparative Examples 5 to 7]
As a processing method of Example 5 of the present invention, processing was performed under the following conditions. First, as a processing method of Example 5 of the present invention, a single crystal diamond (3 mm × 3 mm) is pressed with a load of ² kg (22.2 kg / cm ² ) as a workpiece on a sapphire platen to rotate the sapphire platen. The sample holder was rotated at 1000 rpm while rotating under conditions of several 250 rpm, a swing distance of 3 mm, and a swing speed of 0.1 mm / s. In addition, anions were supplied from the charging unit from above the sapphire surface plate. Moreover, the humidification process was performed from the upper direction of a sapphire surface plate with a humidification unit. Processing was performed for 1.5 hours in this situation.
In the same manner as in Example 5, Example 6 was obtained in which cations were supplied from the charging unit.
Unprocessed single crystal diamond was taken as Comparative Example 5.
Further, Comparative Example 6 was prepared without supplying the anions or cations in the same manner as in Example 5 and not subjected to the humidification treatment. That is, this method is a method in which only the physical processing is performed by the relative displacement of the processing member and the workpiece without controlling the charge amount of the sapphire surface plate.
Furthermore, Comparative Example 7 was treated in the same manner as in Comparative Example 6 and was subjected to the humidification treatment from the upper side of the sapphire surface plate by the humidification unit.
The surface roughness of the surface to be processed was evaluated for the above-described Examples 5 to 6 and Comparative Examples 5 to 7 using a scanning white light interferometer. The measurement range is 696 μm × 522 μm.

  FIG. 13 shows a scanning white interferometer image of Comparative Example 5, and FIG. 14 shows a scanning white interferometer image of Example 5. In FIG.

As apparent from FIGS. 13 and 14, the machining surface of the workpiece is processed with high accuracy by the processing of Example 5 as compared with the surface of the unprocessed workpiece of Comparative Example 5, and the measurement range of the workpiece surface The value of arithmetic mean roughness (Ra) at was 0.308 nm, and it was found that it was processed smoothly. The value of arithmetic mean roughness (Ra) of comparative example 5 was 8.118 nm.
Further, although not shown, the processed surface of the workpiece is processed with high accuracy also in the processing of Example 6, and the value of arithmetic average roughness (Ra) in the measurement range of the processed surface is 0.341 nm, It turned out that it was processed.
On the other hand, in the processing of Comparative Example 6 in which the supply of anions or cations was not performed, the value of the arithmetic average roughness (Ra) in the measurement range of the surface to be processed was 2.595 nm.

(6) About processing efficiency About the processing efficiency by the processing method of Example 5-6 mentioned above and Comparative Examples 6-7, it confirmed by the following contents.
A groove having a predetermined depth was formed in a single crystal diamond to be processed, and the machining efficiency was calculated from the amount of change in groove depth before and after machining.

The processing efficiency in Example 5 was 572.2 nm / h, and the processing efficiency in Example 6 was 454.3 nm / h, which indicated sufficient processing efficiency.
On the other hand, the processing efficiency in Comparative Example 6 was 23.2 nm / h. Moreover, the processing efficiency in the comparative example 7 was 99.7 nm / h.

(7) Surface Roughness of Machining Surface of Workpiece [Examples 7 to 8 and Comparative Example 8]
As a processing method of Example 7 of the present invention, an ultraviolet light source was further installed in the apparatus configuration of the processing method of Example 5 described above, and processing was performed under the condition of irradiating the sapphire base plate with ultraviolet light. In Example 7, as in Example 5, anions were supplied from the charging unit from above the sapphire surface plate. Moreover, the humidification process was performed from the upper direction of a sapphire surface plate with a humidification unit. Other conditions are the same as in Example 5.
In the same manner as in Example 7, Example 8 was obtained in which cations were supplied from the charging unit.
Unprocessed single crystal diamond was taken as Comparative Example 8.
The surface roughness of the surface to be processed was evaluated for the above-described Examples 7 to 8 and Comparative Example 8 with a scanning white light interferometer. The measurement range is 696 μm × 522 μm.

  FIG. 15 shows a scanning white interferometer image of Comparative Example 8, and FIG. 16 shows a scanning white interferometer image of Example 7. As shown in FIG.

As apparent from FIGS. 15 and 16, the processing surface of the workpiece is processed with high accuracy by the processing of Example 7 as compared with the surface of the unprocessed workpiece of Comparative Example 8, and the measurement range of the processing surface The value of arithmetic mean roughness (Ra) at was 0.625 nm, and it was found that it was processed smoothly. The value of arithmetic mean roughness (Ra) of comparative example 8 was 4.320 nm.
Further, although not shown, the processed surface of the object to be processed is processed with high accuracy also in the processing of Example 8, and the value of arithmetic average roughness (Ra) in the measurement range of the surface to be processed is 0.924 nm. It turned out that it was processed.

(8) About processing efficiency The processing efficiency by the processing method of Example 7-8 mentioned above and comparative examples 9-10 was confirmed by the following contents.
Comparative Example 9 is a method in which irradiation of ultraviolet light and humidification treatment are performed in the processing method of Example 7, but supply of anions from the charging unit is not performed. That is, the processing is performed in which only the irradiation of the ultraviolet light is performed without controlling the charge amount of the sapphire base plate. The other processing conditions are the same as the processing method of the seventh embodiment.
Further, Comparative Example 10 was made in the same manner as Comparative Example 9, except that the humidification unit was not subjected to the humidification treatment from the upper side of the sapphire surface plate.
A groove having a predetermined depth was formed in a single crystal diamond to be processed, and the machining efficiency was calculated from the amount of change in groove depth before and after machining.

The processing efficiency in Example 7 was 3741.4 nm / h or more, and the processing efficiency in Example 8 was 2858.9 nm / h, indicating a sufficient processing efficiency. It became clear that the processing efficiency of Example 7 and Example 8 is a method which shows still higher processing efficiency than the processing efficiency of Example 5 and Example 6 mentioned above.
On the other hand, the processing efficiency in Comparative Example 9 was 543.4 nm / h or more. Moreover, the processing efficiency in the comparative example 10 was 238.1 nm / h.
As described above, the processing efficiency was obtained by processing grooves in a single crystal diamond, which is a workpiece, in advance, and was intended to calculate the amount of change in the depth of the grooves before and after processing. And since the grooves of the single crystal diamond disappeared in the processing of Comparative Example 9, the numerical value of the processing efficiency of Example 7 is "3741.4 nm / h or more", and the processing efficiency of Comparative Example 9 is "543.4 nm / h or more". It is written as ".

(9) Surface Potential of Workpiece [Examples 9 to 11 and Comparative Example 11]
As a processing method of the ninth embodiment of the present invention, the charging unit is removed from the apparatus configuration of the processing method of the fifth embodiment described above (without humidification treatment), and the processing member is changed from a sapphire platen to a synthetic quartz platen. Then, Example 9 was obtained by supplying N ₂ gas to the vicinity of a processing point which is a contact portion between a platen and a single crystal diamond which is a workpiece. Processing was performed for 1.5 hours in this situation.
In a method similar to Example 9, one subjected to the humidification treatment from the humidification unit was taken as Example 10.
In the same manner as in Example 10, one in which anions were supplied from the charging unit was taken as Example 11.
In addition, Comparative Example 11 was obtained by not supplying the N ₂ gas from the processing method of Example 9.
In Examples 9 to 11 and Comparative Example 11 described above, the surface potential of the synthetic quartz platen was measured by a surface voltmeter to evaluate the charge amount.

  The relationship between the surface potential and the processing time is shown as a graph in FIG. 17 to FIG. 17 shows the results of Example 9, FIG. 18 shows the results of Example 10, FIG. 19 shows the results of Example 11 and FIG. The vertical axis of the graph is the surface potential, and the horizontal axis is the processing time (min).

As is clear from FIG. 17, it was found that the surface potential of the platen was controlled to a constant value range by supplying N ₂ gas to the synthetic quartz platen. Further, as apparent from FIGS. 18 and 19, supply and humidification of N ₂ gas, or by a combination of ion supply from the moistening and the charging unit and the supply of N ₂ gas, platen surface potential It has been found that it can be controlled more strictly.

(10) Surface Roughness of Processed Surface of Workpiece With respect to Examples 9 to 11 and Comparative Example 11 described above, the surface roughness of the processed surface was measured by a scanning white interferometer with the same contents as the method described above. evaluated.

  FIGS. 21 to 24 show scanning white light interferometer images. 21 shows the results of Example 9, FIG. 22 shows the results of Example 10, FIG. 23 shows the results of Example 11 and FIG.

As apparent from FIGS. 21 and 24, the processing surface of the workpiece is processed with high accuracy by the processing of Example 9 as compared with the surface of the unprocessed workpiece of Comparative Example 11, and the measurement range of the processing surface The value of the arithmetic mean roughness (Ra) at 0.55 nm was found to be smooth. The value of arithmetic mean roughness (Ra) of comparative example 11 was 1.805 nm.
Further, as shown in FIGS. 22 and 23, in the processing of Example 10 and Example 11, the processed surface of the workpiece is processed with higher accuracy, and the arithmetic average in the measurement range of the processed surface of Example 6 The value of roughness (Ra) was 0.184 nm, and the value of arithmetic mean roughness (Ra) in the measurement range of the surface to be processed of Example 11 was 0.149 nm, and they were processed smoothly. I understand.

(11) Regarding processing efficiency With respect to the above-described Examples 9 to 11 and Comparative Example 11, the processing efficiency was evaluated by the same contents as the method described above.

In Example 9, the processing efficiency is 586.2 nm / h, the processing efficiency in Example 10 is 1261.8 nm / h, and the processing efficiency in Example 11 is 1560 nm / h. In particular, Examples 10 and 11 are sufficiently satisfactory. Processing efficiency was shown.
On the other hand, the processing efficiency in Comparative Example 11 was 38.33 nm / h.

DESCRIPTION OF SYMBOLS 1 processing apparatus 2 sapphire surface plate 3 single crystal diamond 4 sample holder 5 ozone supply part 6 processing table 7 rotating shaft 11 processing apparatus 12 synthetic quartz surface plate 13 charging unit 14 single crystal diamond 15 sample holder 16 processing table 17 rotation shaft 18 processing Device 19 UV light source

Claims (8)

A process member is brought into contact with a work piece made of metal oxide, ozone gas containing an alkaline solution is supplied to the contact portion, and the work member is displaced in a state of being in contact with the work thing ,
The processing member is made of any one of Al ₂ O ₃ or SiO ₂ -based glass,
The processing method is made of GaN. The ozone gas contains alkaline electrolyzed water
The processing method according to claim 1 . At least one of a cation or an anion is supplied to at least one of the workpiece and the workpiece to control the charge amount.
The processing method of Claim 1 or Claim 2 . Contacting a processing member made of a metal oxide with a workpiece, supplying ozone gas to the contact area, and displacing the processing member in contact with the workpiece;
The processing member is Al ₂ O ₃ Or SiO ₂ And any one of the glasses whose main component is
The workpiece is made of GaN,
At least one of a cation or an anion is supplied to at least one of the workpiece or the workpiece to charge at least one of the workpiece or the workpiece.
Processing method. A processing member made of metal oxide,
A holding mechanism for holding a predetermined workpiece in contact with the processing member;
An ozone gas supply unit configured to supply an ozone gas containing an alkaline solution to a contact portion between the processing member and the workpiece;
And a drive unit for displacing the processing member in a state in which the processing member is in contact with the workpiece.
The processing member is made of any one of Al ₂ O ₃ or SiO ₂ -based glass,
The workpiece is made of GaN
Processing equipment . The ozone gas contains alkaline electrolyzed water
The processing apparatus according to claim 5 . And at least one of the workpiece and the workpiece is supplied with at least one of positive ions or negative ions to control a charge amount.
The processing apparatus of Claim 5 or Claim 6 . A processing member made of metal oxide,
A holding mechanism for holding a predetermined workpiece in contact with the processing member;
An ozone gas supply unit for supplying ozone gas to the contact portion between the processing member and the workpiece;
A driving unit that displaces the processing member in a state in which the processing member and the workpiece are in contact with each other;
And at least one of a cation or an anion is supplied to at least one of the workpiece and the workpiece to charge at least one of the workpiece and the workpiece. Equipped with
The processing member is made of any one of Al ₂ O ₃ or SiO ₂ -based glass,
The workpiece is made of GaN
Processing equipment .